摘要:
An image reproduction method includes: a reduced-size image reading step of reading a plurality of reduced-size images from a recording medium and storing the reduced-size images in a memory; a display step of multi-displaying the plurality of reduced-size images on a monitor; a cursor movement detection step of detecting a moving speed of a cursor indicating a selected reduced-size image from the plurality of reduced-size images displayed on the monitor; and an image read-ahead step of reading images from the recording medium according to the moving speed of the cursor and storing the image in the memory.
摘要:
An image reproduction method includes: a reduced-size image reading step of reading a plurality of reduced-size images from a recording medium and storing the reduced-size images in a memory; a display step of multi-displaying the plurality of reduced-size images on a monitor; a cursor movement detection step of detecting a moving speed of a cursor indicating a selected reduced-size image from the plurality of reduced-size images displayed on the monitor; and an image read-ahead step of reading images from the recording medium according to the moving speed of the cursor and storing the image in the memory.
摘要:
According to one embodiment, a photomask blank wherein a second film is stacked on a first film, the first film containing chromium and which is not substantially etched by the dry etching using fluorine and which is etchable by the dry etching using oxygen-containing chlorine, and the second film containing no chromium and which is etchable by dry etching using fluorine and dry etching using oxygen-containing chlorine.
摘要:
A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要:
A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要:
A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
摘要:
There are provided screen unit stowable type equipment and in-vehicle mount information equipment that have a communication antenna mounted at an image display unit side, and can keep reception sensitivity even under a state that the image display unit is stowed in an equipment main body portion.In screen unit stowable type equipment having an equipment main body portion 10 having an operation panel 30 secured to the front surface thereof and an image display unit 20 that is stowed in the equipment main body portion 10 so as to be pulled out from the front surface of the equipment main body portion 10 with a liquid crystal display screen 21 being placed face down, a radio communication unit which can communicate with an external is provided, and a pattern antenna 110 for radio communication is provided to the tip portion 20a in a pull-out direction of the image display unit 20.
摘要:
A photomask blank which is manufactured by depositing a phase shift film on a substrate and irradiating the phase shift film with high-energy radiation to effect substrate shape adjusting treatment is inspected by measuring a surface topography of the photomask blank after the substrate shape adjusting treatment, removing the phase shift film from the photomask blank, measuring a surface topography of the treated substrate after removal of the phase shift film, and comparing the surface topographies, thereby evaluating a warpage change before and after removal of the phase shift film, due to a stress of the phase shift film having undergone substrate shape adjusting treatment.
摘要:
An opaque area is formed in a sidewall portion of a susceptor by stacking a material that is transparent to flash light and a material that is opaque to the flash light to form the sidewall portion or coating a surface of the opaque material with the transparent material. A top surface of the opaque area in the sidewall portion of the susceptor is designed to have a predetermined positional relationship with a top surface of a substrate; the top surface of the opaque area is set at the same position as that of the top surface of the substrate or higher than the top surface of the substrate by a predetermined height. Thus, obliquely incident flash light is absorbed or irregularly reflected by the opaque quartz portion, surrounding an excavated portion of the susceptor.
摘要:
A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).