摘要:
Provided is a display device that includes an optical sensor having a high sensitivity in which a potential difference of an accumulation node due to an illuminance difference on a light receiving surface after boosting is set greater than a potential difference of the same at an end of an integration period. The display device includes an optical sensor in a pixel region. The optical sensor includes a diode D1; a reset signal line RST for supplying a reset signal; a readout signal line RWS for supplying a readout signal; an accumulation node having a potential (VINT) that varies with an amount of light received by the diode D1 during a period from supply of the reset signal to supply of the readout signal; an amplifying element C1 for amplifying VINT according to the readout signal; and a sensor switching element M2 for reading out the amplified potential and outputting the same to an output line. A potential of a light shielding film LS provided on a back side of the diode is fixed to a constant potential VLS satisfying the following formula: VLS≧VRST.H.
摘要:
Dynamic range is widened in a display device with a photosensor that can read an image due to having a photodetection element inside a pixel thereof. A sensor driving circuit switches ON a reset signal (RST) that is supplied via reset signal bus line, and after a predetermined time has elapsed, switches ON a readout signal (RWS) that is supplied via readout signal bus line. Thus, in the photosensor, from which a photosensor signal is output in accordance with an amount of light received by the photosensor in the predetermined time, the capacitance of a capacitor provided in the photosensor is made variable from when the reset signal (RST) is supplied to the photosensor until when the predetermined time has elapsed.
摘要:
An image display device includes an image display panel (4) with an image detection function, and includes a plurality of pixels disposed in a matrix and a plurality of photosensors (17) disposed in correspondence with the pixels in a display region. The pixels each have a plurality of sub-pixels (5), and a color filter in which colors of color layers are formed in correspondence with the sub-pixels (5) is provided. The photosensors (17) have an incident light wavelength characteristic in which a photoreception sensitivity to light that passes through, among the colors of color layers, the color layer whose color is most toward a short wavelength side is higher than a photoreception sensitivity to light that passes through, among the colors of color layers, the color layer whose color is most toward a long wavelength side, and the photosensors (17) are disposed such that, with respect to a thickness direction of the image display panel (4), photodetection regions (19) of the photosensors (17) overlap with, among the plurality of color layers, the color layer whose color is most toward the long wavelength side. The present invention enables reducing the reflection of a display image on sensor output caused by optical interference.
摘要:
A capacitance variation detection circuit is provided in which detection sensitivity to variations in the liquid crystal capacitance can be improved. A capacitance variation detection circuit (10) includes a first variable capacitance portion (CLC1) connected to the voltage supply line; a second variable capacitance portion (CLC2) connected in series with the first variable capacitance portion (CLC1); and a TFT (15) connected to the second variable capacitance portion (CLC2) to be driven depending on the capacitance value of the first variable capacitance (CLC1) and the capacitance value of the second variable capacitance (CLC2), to output an electrical signal corresponding to these capacitance values.
摘要:
Dynamic range is widened in a display device with a photosensor that can read an image due to having a photodetection element inside a pixel thereof. A sensor driving circuit switches ON a reset signal (RST) that is supplied via reset signal bus line, and after a predetermined time has elapsed, switches ON a readout signal (RWS) that is supplied via readout signal bus line. Thus, in the photosensor, from which a photosensor signal is output in accordance with an amount of light received by the photosensor in the predetermined time, the capacitance of a capacitor provided in the photosensor is made variable from when the reset signal (RST) is supplied to the photosensor until when the predetermined time has elapsed.
摘要:
Provided is a display device that includes an optical sensor having a high sensitivity in which a potential difference of an accumulation node due to an illuminance difference on a light receiving surface after boosting is set greater than a potential difference of the same at an end of an integration period. The display device includes an optical sensor in a pixel region. The optical sensor includes a diode D1; a reset signal line RST for supplying a reset signal; a readout signal line RWS for supplying a readout signal; an accumulation node having a potential (VINT) that varies with an amount of light received by the diode D1 during a period from supply of the reset signal to supply of the readout signal; an amplifying element C1 for amplifying VINT according to the readout signal; and a sensor switching element M2 for reading out the amplified potential and outputting the same to an output line. A potential of a light shielding film LS provided on a back side of the diode is fixed to a constant potential VLS satisfying the following formula: VLS≧VRST.H.
摘要:
Provided are a photodetector capable of suppressing variations in the output characteristics among photodiodes, and a display device provided with the photodetector. A display device in use has an active matrix substrate (20) including a transparency base substrate (2), a plurality of active elements and a photodetector. The photodetector includes a light-shielding layer (3) provided on one main surface of the base substrate (2), a photodiode (1) arranged on an upper layer of the light-shielding layer (3), and an electrode (12) arranged in the vicinity of the photodiode (1) on the upper layer of the light-shielding layer (3). The photodiode (1) includes a silicon layer (11), and the silicon layer (11) is insulated electrically from the light-shielding layer (3). The electrode (12) is insulated electrically from the light-shielding layer (3) and the silicon layer (11). The light-shielding layer (3) is formed so that a part thereof is overlapped with the entire silicon layer (11) and the other part is overlapped with the electrode (12) in the thickness direction of the base substrate (2).
摘要:
A sensor circuit or a display apparatus from which a highly accurate sensor output can be obtained includes a photodiode (photodetecting element); a capacitor connected to the photodiode via an accumulation node; a reset signal line to which a reset signal is supplied; a readout signal line to which a readout signal is supplied; a thin-film transistor (sensor switching element) that makes the accumulation node and an output line conductive with respect to each other and outputs an output signal according to the potential of the accumulation node; a microswitch that is capable of switching connection and disconnection between the accumulation node and an input electrode and provides connection when a pressure is applied by a touching operation; and a thin-film (control switching element) for switching conduction and non-conduction between the microswitch and the accumulation node.
摘要:
The present invention provides a liquid crystal display device capable of preventing the occurrence of dark currents in photodiodes. Thus, the liquid crystal display device includes a liquid crystal display panel 1 including an active matrix substrate and a backlight 13 for illuminating the liquid crystal display panel. The active matrix substrate 1 includes a photodiode 7 formed by a silicon film and a light shielding film 8 for shielding the photodiode 7 against illumination light from the backlight 13. The photodiode 7 and the light shielding film 8 are provided on a base substrate 5. The light shielding film 8 is formed by a semiconductor or an insulator. Preferably, the photodiode 7 is made of, for example, polycrystalline silicon or continuous grain silicon so as to have a characteristic that its sensitivity increases as the wavelength of light entering the photodiode becomes shorter. The light-shielding film 8 is formed by a silicon film, for example amorphous silicon, that reduces the transmittance of light entering the light shielding film as the wavelength of the light becomes shorter.
摘要:
A photodiode (7) formed in a polycrystalline silicon layer or a continuous grain silicon layer on a base substrate (5) of a display device includes a semiconductor region of a first conductivity-type (n layer (21)), an intrinsic semiconductor region (i layer (22)), and a semiconductor region of a second conductivity-type (p layer (23)) that is opposite from the first conductivity-type. At least a portion of the intrinsic semiconductor region (i layer (22)) is amorphous silicon.