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    Magnetic sensor and magnetic sensor module
    1.
    发明授权
    Magnetic sensor and magnetic sensor module 有权
    磁传感器和磁传感器模块

    公开(公告)号：US07859258B2

    公开(公告)日：2010-12-28

    申请号：US12820764

    申请日：2010-06-22

    申请人： Hiromitsu Sasaki ,  Hirofumi Fukui ,  Takashi Hatanai

    发明人： Hiromitsu Sasaki ,  Hirofumi Fukui ,  Takashi Hatanai

    IPC分类号： G01R33/09 ,  H01L43/08

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  H01L43/08

    摘要： Magnetoresistive effect elements are provided with an element unit having an elongated shape in which an element length L1 is formed to be longer than an element width W1. The element unit has a fixed magnetic layer and a free magnetic layer laminated via a non-magnetic layer on the fixed magnetic layer. A magnetism direction of the fixed magnetic layer faces an element width direction (Y direction) of a sensitivity axis direction. First soft magnetic bodies formed to have a width size W2 and a length size L2 are arranged in a non-contact manner on both lateral sides of the magnetoresistive effect element. The length size L2 is longer than the element length L1, and the first soft magnetic body has an extension part extending in an element length direction from both sides in the element length direction of the element unit.

    摘要翻译： 磁阻效应元件设置有具有细长形状的元件单元，其中元件长度L1形成为长于元件宽度W1。 元件单元具有固定磁性层和通过固定磁性层上的非磁性层层叠的自由磁性层。 固定磁性层的磁方向与感光度轴方向的元件宽度方向（Y方向）相对。 形成为具有宽度尺寸W2和长度尺寸L2的第一软磁体以非接触方式布置在磁阻效应元件的两个侧面上。 长度尺寸L2比元件长度L1长，第一软磁体具有在元件单元的元件长度方向上的两侧沿元件长度方向延伸的延伸部。

    MAGNETIC SENSOR AND MAGNETIC SENSOR MODULE
    2.
    发明申请
    MAGNETIC SENSOR AND MAGNETIC SENSOR MODULE 有权
    磁传感器和磁传感器模块

    公开(公告)号：US20100259257A1

    公开(公告)日：2010-10-14

    申请号：US12820764

    申请日：2010-06-22

    申请人： Hiromitsu Sasaki ,  Hirofumi Fukui ,  Takashi Hatanai

    发明人： Hiromitsu Sasaki ,  Hirofumi Fukui ,  Takashi Hatanai

    IPC分类号： G01R33/02

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  H01L43/08

    摘要： Magnetoresistive effect elements are provided with an element unit having an elongated shape in which an element length L1 is formed to be longer than an element width W1. The element unit has a fixed magnetic layer and a free magnetic layer laminated via a non-magnetic layer on the fixed magnetic layer. A magnetism direction of the fixed magnetic layer faces an element width direction (Y direction) of a sensitivity axis direction. First soft magnetic bodies formed to have a width size W2 and a length size L2 are arranged in a non-contact manner on both lateral sides of the magnetoresistive effect element. The length size L2 is longer than the element length L1, and the first soft magnetic body has an extension part extending in an element length direction from both sides in the element length direction of the element unit.

    摘要翻译： 磁阻效应元件设置有具有细长形状的元件单元，其中元件长度L1形成为长于元件宽度W1。 元件单元具有固定磁性层和通过固定磁性层上的非磁性层层叠的自由磁性层。 固定磁性层的磁方向与感光度轴方向的元件宽度方向（Y方向）相对。 形成为具有宽度尺寸W2和长度尺寸L2的第一软磁体以非接触方式布置在磁阻效应元件的两个侧面上。 长度尺寸L2比元件长度L1长，第一软磁体具有在元件单元的元件长度方向上的两侧沿元件长度方向延伸的延伸部。

    Method of producing an electro-optical device
    7.
    发明授权
    Method of producing an electro-optical device 失效
    电光装置的制造方法

    公开(公告)号：US5879958A

    公开(公告)日：1999-03-09

    申请号：US745933

    申请日：1996-11-07

    申请人： Ken Kawahata ,  Akira Nakano ,  Hirofumi Fukui ,  Hiroyuki Hebiguchi ,  Kenji Yamamoto ,  Chisato Iwasaki

    发明人： Ken Kawahata ,  Akira Nakano ,  Hirofumi Fukui ,  Hiroyuki Hebiguchi ,  Kenji Yamamoto ,  Chisato Iwasaki

    IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786

    CPC分类号： H01L27/1214

    摘要： A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semiconductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions.The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost adjacent thin film transistors.

    摘要翻译： 一种用于制造电光装置的方法，包括形成透明像素电极的第一光刻步骤，形成栅电极的第二光刻和栅极布线;第三光刻步骤，在导致所述绝缘膜的绝缘膜中形成接触孔 像素电极和栅极布线;在栅电极上方形成源电极和漏电极以及沟道部分的第四光刻步骤，以及在钝化膜中形成接触孔并将半导体活性膜隔离在第五光刻步骤的第五光刻步骤 源电极，漏电极和源极布线。 可以减少光刻步骤的数量，以提高相邻薄膜晶体管的产量并降低生产成本。