Method of manufacturing an optical waveguide device
    1.
    发明授权
    Method of manufacturing an optical waveguide device 失效
    制造光波导器件的方法

    公开(公告)号:US5612086A

    公开(公告)日:1997-03-18

    申请号:US256179

    申请日:1994-06-28

    IPC分类号: G02B6/122 B05D5/06

    CPC分类号: G02B6/122

    摘要: Electric discharge breakdown in an optical waveguide pattern formed on a crystal substrate having pyroelectric effect is substantially extinguished or reduced, so that the yield of optical waveguide devices in the manufacturing process can be increased. A plurality of optical waveguide patterns 5 are formed, in parallel, by means of heat treatment on a substrate 2 of lithium niobate having pyroelectric effect, and the formed waveguide patterns are cut into a predetermined chip-shape. In the manufacturing method of this optical waveguide device, patterns are formed so that both ends of the optical waveguide pattern 5 are respectively communicated at a position where both ends of the optical waveguide pattern 5 are out of an effective chip range. Further, a dummy pattern 26 is formed at a position close to a waveguide pattern 25.

    摘要翻译: PCT No.PCT / JP93 / 01565 Sec。 371日期:1994年6月28日 102(e)日期1994年6月28日PCT提交1993年10月28日PCT公布。 公开号WO94 / 10592 日期1994年5月11日在具有热电效应的晶体基板上形成的光波导图案中的电击放电基本上熄灭或减少,从而可以提高制造工艺中的光波导器件的产量。 通过在具有热电效应的铌酸锂的基板2上进行热处理,平行地形成多个光波导图案5,并且将形成的波导图案切割成预定的芯片形状。 在该光波导装置的制造方法中,形成图案,使得光波导图案5的两端分别在光波导图案5的两端处于有效芯片范围之外的位置连通。 此外,在靠近波导图案25的位置处形成虚设图案26。

    Waveguide-optical fiber connection structure and waveguide-optical fiber
connection method
    3.
    发明授权
    Waveguide-optical fiber connection structure and waveguide-optical fiber connection method 失效
    波导光纤连接结构和波导光纤连接方法

    公开(公告)号:US5557695A

    公开(公告)日:1996-09-17

    申请号:US332578

    申请日:1994-10-31

    摘要: The invention provides an improved simplified waveguide-optical fiber connection structure for connecting a waveguide and an optical fiber. The waveguide-optical fiber connection structure comprises an optical fiber, a waveguide substrate having a waveguide integrally formed thereon and having a first guide groove formed thereon adjacent an end portion of the waveguide for positioning the optical fiber therein, and a fiber substrate provided in an opposing relationship to the first guide groove for cooperating with the first guide groove to hold the optical fiber thereon. The waveguide-optical fiber connection structure can be applied to a waveguide circuit which is employed for optical communication, optical information management and so forth.

    摘要翻译: 本发明提供了一种用于连接波导和光纤的改进的简化波导 - 光纤连接结构。 波导光纤连接结构包括光纤,波导基体,其波导一体地形成在其上,并且在其上形成有邻近波导端部的第一引导槽,用于将光纤定位在其中;以及光纤基板, 与第一引导槽相对的关系,用于与第一引导槽配合以将光纤保持在其上。 波导光纤连接结构可以应用于用于光通信,光信息管理等的波导电路。

    Dielectric optical waveguide device
    4.
    发明授权
    Dielectric optical waveguide device 失效
    介质光波导器件

    公开(公告)号:US5598490A

    公开(公告)日:1997-01-28

    申请号:US459459

    申请日:1995-06-02

    摘要: An insulating buffer layer of SiO.sub.2 is formed on a substrate of LiNbO.sub.3 crystal in which optical waveguides are formed, and a semiconducting film of Si is formed on the buffer layer. An insulating diffusion suppressing layer of SiO.sub.2 is formed on the semiconducting film, and a pair of electrodes of Au are located on the diffusion suppressing layer. The formation of silicide by solid-phase diffusion of the electrodes into the semiconducting film can be prevented by the diffusion suppressing layer.

    摘要翻译: 在形成光波导的LiNbO 3晶体的衬底上形成SiO 2绝缘缓冲层,在缓冲层上形成Si半导体膜。 在半导体膜上形成有SiO 2的绝缘扩散抑制层,Au的一对电极位于扩散抑制层上。 通过扩散抑制层可以防止电极通过固相扩散到半导体膜中而形成硅化物。

    Dielectric optical waveguide device
    5.
    发明授权
    Dielectric optical waveguide device 失效
    介质光波导器件

    公开(公告)号:US5473711A

    公开(公告)日:1995-12-05

    申请号:US190478

    申请日:1994-02-02

    摘要: An insulating buffer layer of SiO.sub.2 is formed on a substrate of LiNbO.sub.3 crystal in which optical waveguides are formed, and a semiconducting film of Si is formed on the buffer layer. An insulating diffusion suppressing layer of SiO.sub.2 is formed on the semiconducting film, and a pair of electrodes of Au are located on the diffusion suppressing layer. The formation of silicide by solid-phase diffusion of the electrodes into the semiconducting film can be prevented by the diffusion suppressing layer.

    摘要翻译: 在形成光波导的LiNbO 3晶体的衬底上形成SiO 2绝缘缓冲层,在缓冲层上形成Si半导体膜。 在半导体膜上形成有SiO 2的绝缘扩散抑制层,Au的一对电极位于扩散抑制层上。 通过扩散抑制层可以防止电极通过固相扩散到半导体膜中而形成硅化物。

    Cooling structure of turbine airfoil
    6.
    发明授权
    Cooling structure of turbine airfoil 有权
    涡轮机翼的冷却结构

    公开(公告)号:US09133717B2

    公开(公告)日:2015-09-15

    申请号:US12812227

    申请日:2009-01-08

    IPC分类号: F01D5/18

    摘要: A cooling structure of a turbine airfoil cools a turbine airfoil (10) exposed to hot gas (1), using cooling air (2) of a temperature lower than that of the hot gas. The turbine airfoil (10) includes an external surface (11), an internal surface (12) opposite to the external surface, a plurality of film-cooling holes (13) blowing the cooling air from the internal surface toward the external surface to film-cool the external surface, and a plurality of heat-transfer promoting projections (14) integrally formed with the internal surface and protruding inwardly from the internal surface. The turbine airfoil further includes a hollow cylindrical insert (20) which is positioned inside the internal surface of the turbine airfoil and to which the cooling air is supplied. The insert has a plurality of impingement holes (21) for impingement-cooling the internal surface (12).

    摘要翻译: 涡轮翼型件的冷却结构使用比热气体的温度低的冷却空气(2)冷却暴露于热气体(1)的涡轮机翼型件(10)。 涡轮机翼(10)包括外表面(11),与外表面相对的内表面(12),多个薄膜冷却孔(13),其将冷却空气从内表面向外表面吹向薄膜 - 冷却外表面,以及多个传热促进突起(14),其与内表面整体形成并从内表面向内突出。 涡轮机翼片还包括中空圆柱形插入件(20),该中空圆柱形插入件位于涡轮机翼片的内表面内部,并且供应冷却空气。 插入件具有用于冲击冷却内表面(12)的多个冲击孔(21)。

    Extracorperal ultrasonic irradition of titanium oxide (TiO2) coated implant for angiogenesis stimulation
    7.
    发明授权
    Extracorperal ultrasonic irradition of titanium oxide (TiO2) coated implant for angiogenesis stimulation 有权
    氧化钛(TiO2)涂层植入物用于血管生成刺激的超声波超声辐照

    公开(公告)号:US08515524B2

    公开(公告)日:2013-08-20

    申请号:US12325678

    申请日:2008-12-01

    IPC分类号: A61B5/00

    CPC分类号: A61B90/40 A61N7/00

    摘要: The present invention solves the issue of bacterial infection by medical devices such as intracorporeal indwelling catheters. The present invention relates to an ultrasonic medical apparatus including a medical device (titanium oxide coated medical device 10) covered with a titanium oxide material (titanium oxide alone or a titanium oxide composite material) and ultrasonic irradiation means 20. Ultrasonic irradiation of the titanium oxide material, which exists on a surface of the medical device, causes the surface of the medical device to exert beneficial effects such as antibiotic action, the stimulation of angiogenesis, and the degradation of a blood clot and a biofilm.

    摘要翻译: 本发明解决了诸如体内留置导管之类的医疗装置的细菌感染问题。 超声波医疗装置技术领域本发明涉及一种超声波医疗装置,其包括被钛氧化物材料(单独的氧化钛或氧化钛复合材料)覆盖的医疗装置(氧化钛被覆医用器具10)和超声波照射手段20。 存在于医疗装置的表面上的材料导致医疗装置的表面发挥有益效果,例如抗生素作用,刺激血管生成以及血块和生物膜的降解。

    Boundary acoustic wave device having three-medium structure
    8.
    发明授权
    Boundary acoustic wave device having three-medium structure 有权
    具有三介质结构的边界声波装置

    公开(公告)号:US08179017B2

    公开(公告)日:2012-05-15

    申请号:US13172966

    申请日:2011-06-30

    申请人: Takashi Yamane

    发明人: Takashi Yamane

    IPC分类号: H03H9/25 H01L41/08

    CPC分类号: H03H9/0222 H03H9/02559

    摘要: A boundary acoustic wave device that has a three-medium structure and that prevents a high-order mode spurious response includes a piezoelectric substrate, a first dielectric layer laminated on the piezoelectric substrate, a second dielectric layer laminated on the first dielectric layer, and an IDT electrode provided at an interface between the piezoelectric substrate and the first dielectric layer. The boundary acoustic wave device utilizes a Stoneley wave that propagates along the interface. Where V1 denotes an acoustic velocity of a slow transversal bulk wave in the piezoelectric substrate and Va denotes an acoustic velocity at an anti-resonant point in a high-order mode of the Stoneley wave, Va>V1 is satisfied.

    摘要翻译: 具有三介质结构并且防止高阶模式杂散响应的弹性边界波装置包括压电基片,层压在压电基片上的第一电介质层,层叠在第一介电层上的第二电介质层和 IDT电极设置在压电基板和第一介电层之间的界面处。 边界声波装置利用沿着界面传播的斯通利波。 其中V1表示压电衬底中的慢横向体波的声速,Va表示在斯通利波的高阶模式下的反谐振点处的声速,满足Va> V1。

    Boundary acoustic wave device
    10.
    发明授权
    Boundary acoustic wave device 有权
    边界声波装置

    公开(公告)号:US08436510B2

    公开(公告)日:2013-05-07

    申请号:US12913847

    申请日:2010-10-28

    IPC分类号: H01L41/083

    摘要: A boundary acoustic wave device includes a piezoelectric substrate made of single-crystalline LiTaO3, a first medium layer disposed on the piezoelectric substrate and made of a dielectric, a second medium layer disposed on the first medium layer and made of a dielectric having a sound velocity different from that of the first medium layer, and at least one interdigital electrode disposed at the boundary between the piezoelectric substrate and the first medium layer. The sound velocity of the first medium layer is less than the sound velocity of LiTaO3. The sound velocity of the second medium layer is greater than the sound velocity of LiTaO3. The inequality (h/λ)×a≦0.05 is satisfied, where H is the thickness of the first medium layer, h is the thickness of the interdigital electrode, λ is the period of electrode fingers of the interdigital electrode, and a is the ratio of the density of a metal of the interdigital electrode to the density of Au.

    摘要翻译: 声界面波装置包括由单晶LiTaO 3构成的压电基板,设在压电基板上的第一介质层,由电介质构成,第二介质层设置在第一介质层上,由具有声速 与第一介质层的不同,以及设置在压电基板和第一介质层之间的边界处的至少一个叉指电极。 第一介质层的声速小于LiTaO3的声速。 第二介质层的声速大于LiTaO3的声速。 满足不等式(h/lambda),a@0.05),其中H是第一介质层的厚度,h是叉指电极的厚度,λ是叉指电极的电极指的周期,a是 指数电极的金属密度与Au的密度之比。