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公开(公告)号：US07547377B2
公开(公告)日：2009-06-16
申请号：US10562812
申请日：2005-02-28
IPC分类号： B01D3/00
CPC分类号： C10B29/06
摘要： A coke-oven repairing apparatus comprising: a traveling carriage 3 which travels in the direction of coke oven battery with the carriage straddled on the rails placed on the top of a coke oven; a traversing carriage 4 provided on said traveling carriage 3, which moves in the direction orthogonal to the direction of coke oven battery; and a working device 5 for making repairs on the oven walls within the coke oven which is mounted on said traversing carriage 4, wherein the working device 5 includes: a guide post 31 which stands on the traversing carriage 4, and is also coupled, at its lower end portion, to a supporting portion provided on the traversing carriage through a pivot shaft 42; a lance 32 which ascends or descends along the guide post 31; and a derricking device 45 which tilts the guide post 31 between a forward-tilted posture and a backward-tilted posture using the pivot shaft 42 as the fulcrum to oscillate the lance 32 inserted in a coke-oven carbonizing chamber through a charging-hole, within the carbonizing chamber.
摘要翻译： 一种焦炉修复装置，其特征在于，包括：移动台车3，其沿着焦炉电池的方向行进，其中所述滑架跨过放置在焦炉顶部的轨道; 设置在所述行驶台车3上的与所述焦炉电池方向正交的方向移动的横动滑架4; 以及用于在安装在所述横移滑架4上的焦炉内的炉壁上进行修理的工作装置5，其中，工作装置5包括：立柱31，其位于横动滑架4上，并且还连接在 其下端部通过枢轴42设置在横动滑架上的支撑部分; 沿导柱31上升或下降的喷枪32; 以及使用枢轴42作为支点使引导柱31向前倾斜姿势和后倾姿态之间倾斜的升降装置45，其通过充电孔摆动插入焦炉碳化室中的喷枪32， 在碳化室内。
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公开(公告)号：US20070102278A1
公开(公告)日：2007-05-10
申请号：US10562812
申请日：2005-02-28
IPC分类号： C10B25/06
CPC分类号： C10B29/06
摘要： A coke-oven repairing apparatus comprising: a traveling carriage 3 which travels in the direction of coke oven battery with the carriage straddled on the rails placed on the top of a coke oven; a traversing carriage4 provided on said traveling carriage 3, which moves in the direction orthogonal to the direction of coke oven battery; and a working device 5 for making repairs on the oven walls within the coke oven which is mounted on said traversing carriage 4, wherein the working device 5 includes: a guide post 31 which stands on the traversing carriage 4, and is also coupled, at its lower end portion, to a supporting portion provided on the traversing carriage through a pivot shaft 42; a lance 32 which ascends or descends along the guide post 31; and a derricking device 45 which tilts the guide post 31 between a forward-tilted posture and a backward-tilted posture using the pivot shaft 42 as the fulcrum to oscillate the lance 32 inserted in a coke-oven carbonizing chamber through a charging-hole, within the carbonizing chamber.
摘要翻译： 一种焦炉修复装置，其特征在于，包括：移动台车3，其沿着焦炉电池的方向行进，其中所述托架跨过放置在焦炉顶部的轨道; 设置在所述行驶台车3上的与所述焦炉电池方向正交的方向移动的横动滑架4; 以及用于在安装在所述横移滑架4上的焦炉内的炉壁上进行修理的工作装置5，其中，工作装置5包括：立柱31，其位于横动滑架4上，并且还连接在 其下端部分通过枢轴42设置在横动滑架上的支撑部分; 沿导柱31上升或下降的喷枪32; 以及使用枢轴42作为支点使引导柱31向前倾斜姿势和后倾姿态之间倾斜的升降装置45，其通过充电孔摆动插入焦炉碳化室中的喷枪32， 在碳化室内。
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3.发明申请OVEN WIDTH MEASUREMENT INSTRUMENT AND PUSH-OUT RAM PROVIDED WITH THE INSTRUMENT 有权烤箱宽度测量仪器和推出的RAM提供给仪器公开(公告)号：US20090103101A1
公开(公告)日：2009-04-23
申请号：US12224428
申请日：2007-02-26
IPC分类号： G01B11/02
CPC分类号： C10B33/10 , C10B45/00 , G01B11/026
摘要： An oven width measuring instrument capable of measuring the oven width continuously while being subject to no restrictions of measurement area or measuring time has: a sensor unit SU composed of an integrated combination of laser displacement sensors 16 and 17 each containing a beam emitting element and a beam receiving element in an outer package, a plurality of plate-like Peltier elements 20a-20d surrounding the outer package and arranged so as to direct their heat absorbing faces toward the outer package, an aluminum inner frame 18 for embedding gaps between the outer package and the heat absorbing faces of the Peltier elements, and cooling fin groups 21a-21d arranged on the heat radiating faces of the Peltier elements; and a housing 13 having an introduction part for introducing cooling air, a discharging part for discharging the cooling air used for cooling, and measurement windows 26 and 28 through which laser beams are passed. The sensor unit SU is accommodated in the housing.
摘要翻译： 能够在不受测量区域或测量时间的限制的情况下连续地测量烤箱宽度的烤箱宽度测量仪器具有：由激光位移传感器16和17的组合组成的传感器单元SU，每个激光位移传感器16和17均包含射束发射元件和 外包装中的光束接收元件，围绕外包装并且布置成将其吸热面引向外包装的多个板状珀耳帖元件20a-20d，铝内框架18，用于在外包装之间嵌入间隙 和珀耳帖元件的吸热面以及布置在珀耳帖元件的散热面上的散热片组21a〜21d; 以及具有用于引入冷却空气的导入部的壳体13，用于排出用于冷却的冷却空气的排出部，以及通过激光的测量窗26,28。 传感器单元SU容纳在壳体中。
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4.发明授权Oven width measurement instrument and push-out ram provided with the instrument 有权仪器附带的烤箱宽度测量仪和推出式压头公开(公告)号：US07630090B2
公开(公告)日：2009-12-08
申请号：US12224428
申请日：2007-02-26
IPC分类号： G01B11/14
CPC分类号： C10B33/10 , C10B45/00 , G01B11/026
摘要： An oven width measuring instrument capable of measuring the oven width continuously while being subject to no restrictions of measurement area or measuring time has: a sensor unit SU composed of an integrated combination of laser displacement sensors 16 and 17 each containing a beam emitting element and a beam receiving element in an outer package, a plurality of plate-like Peltier elements 20a-20d surrounding the outer package and arranged so as to direct their heat absorbing faces toward the outer package, an aluminum inner frame 18 for embedding gaps between the outer package and the heat absorbing faces of the Peltier elements, and cooling fin groups 21a-21d arranged on the heat radiating faces of the Peltier elements; and a housing 13 having an introduction part for introducing cooling air, a discharging part for discharging the cooling air used for cooling, and measurement windows 26 and 28 through which laser beams are passed. The sensor unit SU is accommodated in the housing.
摘要翻译： 能够在不受测量区域或测量时间的限制的情况下连续地测量烤箱宽度的烤箱宽度测量仪器具有：由激光位移传感器16和17的组合组成的传感器单元SU，每个激光位移传感器16和17均包含射束发射元件和 外包装中的光束接收元件，围绕外包装并且布置成将其吸热面引向外包装的多个板状珀耳帖元件20a-20d，铝内框架18，用于在外包装之间嵌入间隙 和珀耳帖元件的吸热面以及布置在珀耳帖元件的散热面上的散热片组21a〜21d; 以及具有用于引入冷却空气的导入部的壳体13，用于排出用于冷却的冷却空气的排出部，以及通过激光的测量窗26,28。 传感器单元SU容纳在壳体中。
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公开(公告)号：US08916917B2
公开(公告)日：2014-12-23
申请号：US13365627
申请日：2012-02-03
IPC分类号： H01L31/101 , H01L27/146
CPC分类号： H01L27/14641 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/1464
摘要： According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.
摘要翻译： 根据一个实施例，固态成像装置包括由具有第一和第二表面的半导体衬底中的元件隔离区围绕的第一元件形成区域，元件形成区域中的第一表面上的上部元件隔离层， 在第二表面和上部元件隔离层之间的下部元件隔离层，元件形成区域中的第一光电二极管，元件形成区域中的浮动扩散以及设置在第一光电二极管和浮动扩散部之间的第一晶体管。 下部元件隔离层的侧表面比上部元件隔离层的侧表面更靠近晶体管。
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公开(公告)号：US08841707B2
公开(公告)日：2014-09-23
申请号：US12884806
申请日：2010-09-17
申请人： Hirofumi Yamashita
发明人： Hirofumi Yamashita
IPC分类号： H01L27/148
CPC分类号： H01L27/14806 , H01L27/14603 , H01L27/14612 , H01L27/14643 , H01L27/14689
摘要： According to one embodiment, a solid-state imaging device includes a semiconductor region, a first diffusion layer, a second diffusion layer, a third diffusion layer, an insulating film, a potential layer, and a read electrode. The semiconductor region includes first and second surfaces. The first diffusion layer is formed in the first surface. The first diffusion layer's concentration is a maximum value in a position at a first depth. The charge accumulation layer has a second depth. The second diffusion layer contacts the first diffusion layer. The third diffusion layer is formed in a position which faces the second diffusion layer in respect to the first diffusion layer. The insulating film is formed on the first surface. The potential layer is formed on the insulating film and has a predetermined potential. The read electrode is formed on the insulating film.
摘要翻译： 根据一个实施例，固态成像装置包括半导体区域，第一扩散层，第二扩散层，第三扩散层，绝缘膜，电位层和读取电极。 半导体区域包括第一和第二表面。 第一扩散层形成在第一表面中。 第一扩散层的浓度是在第一深度处的位置的最大值。 电荷累积层具有第二深度。 第二扩散层接触第一扩散层。 第三扩散层形成在相对于第一扩散层面对第二扩散层的位置。 绝缘膜形成在第一表面上。 电位层形成在绝缘膜上并具有预定电位。 读取电极形成在绝缘膜上。
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公开(公告)号：US08823847B2
公开(公告)日：2014-09-02
申请号：US13705285
申请日：2012-12-05
申请人： Hirofumi Yamashita
发明人： Hirofumi Yamashita
CPC分类号： H01L27/1463 , H01L27/14609 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/1464 , H01L27/14683 , H01L27/14687 , H01L31/18
摘要： According to one embodiment, a solid-state imaging device includes a pixel region which is configured such that a photoelectric conversion unit and a signal scanning circuit unit are included in a semiconductor substrate, and a matrix of unit pixels is disposed, and a driving circuit region which is configured such that a device driving circuit for driving the signal scanning circuit unit is disposed on the semiconductor substrate, wherein the photoelectric conversion unit is provided on a back surface side of the semiconductor substrate, which is opposite to a front surface of the semiconductor substrate where the signal scanning circuit unit is formed, and the unit pixel includes an insulation film which is provided in a manner to surround a boundary part with the unit pixel that neighbors and defines a device isolation region.
摘要翻译： 根据一个实施例，固态成像装置包括被配置为使得光电转换单元和信号扫描电路单元包括在半导体衬底中并且设置单位像素的矩阵的像素区域，以及驱动电路 区域，其被配置为使得用于驱动信号扫描电路单元的器件驱动电路设置在半导体衬底上，其中光电转换单元设置在半导体衬底的与前表面相对的背面侧上 半导体衬底，其中形成信号扫描电路单元，并且单位像素包括绝缘膜，该绝缘膜以与邻近的单位像素围绕边界部分并且限定器件隔离区域的方式设置。
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公开(公告)号：US08542304B2
公开(公告)日：2013-09-24
申请号：US13052145
申请日：2011-03-21
CPC分类号： H04N5/37457 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14641 , H04N9/045
摘要： According to one embodiment, a solid-state imaging device includes first and second pixel portions, first and second transfer transistors, first and second accumulation portions, an element isolation region, first and second amplifier transistors, and a first and second signal lines. The first and second pixel portions include photoelectric conversion elements, respectively. The first and second transfer transistors transfer first and second charges photoelectrically converted by the first and second pixel portions, respectively. The first and second accumulation portions are interposed between the first and second pixel portions, and accumulate the first and second charges, respectively. The element isolation region is interposed between the first and second accumulation portions. The first and second amplifier transistors amplify voltages generated in accordance with the first and second charges accumulated in the first and second accumulation portions, respectively. The first and second signal lines output signal voltages amplify by the amplifier transistors, respectively.
摘要翻译： 根据一个实施例，固态成像装置包括第一和第二像素部分，第一和第二转移晶体管，第一和第二累积部分，元件隔离区域，第一和第二放大器晶体管以及第一和第二信号线。 第一和第二像素部分分别包括光电转换元件。 第一和第二转移晶体管分别转移由第一和第二像素部分光电转换的第一和第二电荷。 第一和第二累积部分被插入在第一和第二像素部分之间，分别积累第一和第二电荷。 元件隔离区域介于第一和第二累积部分之间。 第一和第二放大器晶体管分别放大根据积累在第一和第二累积部分中的第一和第二电荷产生的电压。 第一和第二信号线输出信号电压分别由放大器晶体管放大。
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9.发明授权公开(公告)号：US08476573B2
公开(公告)日：2013-07-02
申请号：US12861238
申请日：2010-08-23
申请人： Hirofumi Yamashita
发明人： Hirofumi Yamashita
IPC分类号： H01L31/00
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14609 , H01L27/14636 , H01L27/1464 , H01L27/14692 , H04N5/23232 , H04N2209/047
摘要： According to one embodiment, a solid-state imaging device with a plurality of light-receiving layers for acquiring different color signals stacked one on top of another in the optical direction. Each of the light-receiving layers includes a photoelectric conversion part that receives light entering the back side of the layer and generates signal charges and a read transistor that is provided on the front side of the layer and reads the signal charges generated at the photoelectric conversion part. A semiconductor layer is stacked via an insulating film on the front side of the top layer of the plurality of light-receiving layers. At the semiconductor layer, there is provided a signal scanning circuit which processes a signal read by each of the read transistors and outputs a different color signal from each of the light-receiving layers to the outside.
摘要翻译： 根据一个实施例，一种具有多个光接收层的固态成像装置，用于获取在光学方向上层叠在另一个上的不同颜色信号。 每个光接收层包括光电转换部分，其接收进入该层的背面的光并产生信号电荷，并且读取晶体管设置在该层的前侧，并读取在光电转换处产生的信号电荷 部分。 半导体层经由多个光接收层的顶层的前侧上的绝缘膜层叠。 在半导体层，提供一个信号扫描电路，处理由每个读出的晶体管读取的信号，并将不同的颜色信号从每个光接收层输出到外部。
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公开(公告)号：US20110234875A1
公开(公告)日：2011-09-29
申请号：US13052145
申请日：2011-03-21
IPC分类号： H04N5/335
CPC分类号： H04N5/37457 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14641 , H04N9/045
摘要： According to one embodiment, a solid-state imaging device includes first and second pixel portions, first and second transfer transistors, first and second accumulation portions, an element isolation region, first and second amplifier transistors, and a first and second signal lines. The first and second pixel portions include photoelectric conversion elements, respectively. The first and second transfer transistors transfer first and second charges photoelectrically converted by the first and second pixel portions, respectively. The first and second accumulation portions are interposed between the first and second pixel portions, and accumulate the first and second charges, respectively. The element isolation region is interposed between the first and second accumulation portions. The first and second amplifier transistors amplify voltages generated in accordance with the first and second charges accumulated in the first and second accumulation portions, respectively. The first and second signal lines output signal voltages amplify by the amplifier transistors, respectively.
摘要翻译： 根据一个实施例，固态成像装置包括第一和第二像素部分，第一和第二转移晶体管，第一和第二累积部分，元件隔离区域，第一和第二放大器晶体管以及第一和第二信号线。 第一和第二像素部分分别包括光电转换元件。 第一和第二转移晶体管分别转移由第一和第二像素部分光电转换的第一和第二电荷。 第一和第二累积部分被插入在第一和第二像素部分之间，分别积累第一和第二电荷。 元件隔离区域介于第一和第二累积部分之间。 第一和第二放大器晶体管分别放大根据积累在第一和第二累积部分中的第一和第二电荷产生的电压。 第一和第二信号线输出信号电压分别由放大器晶体管放大。
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