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1.发明授权Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and nonmagnetic layer 有权具有间隔层的磁阻效应元件包括含有氧化镓和非磁性层的主间隔层公开(公告)号：US08405935B2
公开(公告)日：2013-03-26
申请号：US12979613
申请日：2010-12-28
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996 , Y10T428/1121
摘要： A magnetoresistive effect element (MR element) includes first and second magnetic layers of which relative angles formed by magnetization directions change in relation to an external magnetic field; and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned on a side closer than the second magnetic layer in regards to a substrate above which the magnetoresistive effect element is formed, and the spacer layer includes a main spacer layer made of gallium oxide as the primary component, and a first nonmagnetic layer positioned between the main spacer layer and the first magnetic layer and contains copper and gallium.
摘要翻译： 磁阻效应元件（MR元件）包括由磁化方向形成的相对角度相对于外部磁场而变化的第一和第二磁性层; 以及位于所述第一磁性层和所述第二磁性层之间的间隔层。 相对于其上形成有磁阻效应元件的基板，第一磁性层位于比第二磁性层更靠近的一侧，并且间隔层包括以氧化镓为主要成分的主间隔层，第一磁性层 位于主间隔层和第一磁性层之间并且包含铜和镓的非磁性层。
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2.发明授权Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and metal intermediate layer 有权具有间隔层的磁阻效应元件包括含有氧化镓和金属中间层的主间隔层公开(公告)号：US08593766B2
公开(公告)日：2013-11-26
申请号：US13031822
申请日：2011-02-22
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996
摘要： A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes responsive to an external magnetic field, and a spacer layer positioned between the first and second magnetic layers. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes copper and metal intermediate layers and a main spacer layer composed primarily of gallium oxide. The copper and metal intermediate layers are positioned between the main spacer and first magnetic layers. The metal intermediate layer is positioned between the copper and main spacer layers. The metal intermediate layer is composed primarily of at least one from a group of one of magnesium and at least partially oxidized magnesium, and one of aluminum and at least partially oxidized aluminum.
摘要翻译： 磁阻效应（MR）元件包括其中由磁化方向形成的相对角响应于外部磁场而变化的第一和第二磁性层以及位于第一和第二磁性层之间的间隔层。 第一磁性层定位成比第二磁性层更靠近形成MR元件的衬底。 间隔层包括铜和金属中间层以及主要由氧化镓组成的主间隔层。 铜和金属中间层位于主间隔物和第一磁性层之间。 金属中间层位于铜和主间隔层之间。 金属中间层主要由镁和至少部分氧化的镁中的至少一种以及铝和至少部分氧化的铝中的一种组成。
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3.发明申请公开(公告)号：US20120196153A1
公开(公告)日：2012-08-02
申请号：US13017200
申请日：2011-01-31
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3909 , G11B2005/3996 , Y10T428/1114 , Y10T428/1121
摘要： An MR element includes a stack, being a pillar or trapezoidal stack, including first and second magnetic layers in which a relative angle formed by magnetization directions changes according to an external magnetic field, and a spacer layer that is positioned between the first magnetic layer and the second magnetic layer, and that is provided with a main spacer layer that is composed of gallium oxide, zinc oxide or magnesium oxide as a primary component, wherein, one part of side surfaces of the stack forms a part of an air bearing surface; and a cover layer that covers at least another part of the side surfaces of the stack and that is composed of gallium oxide as a primary component.
摘要翻译： MR元件包括作为柱或梯形叠层的叠层，包括第一和第二磁性层，其中由磁化方向形成的相对角度根据外部磁场而变化;以及间隔层，其位于第一磁性层和第二磁性层之间， 第二磁性层，并且设置有由氧化镓，氧化锌或氧化镁作为主要成分构成的主间隔层，其中堆叠的一部分侧表面形成空气轴承表面的一部分; 以及覆盖层，其覆盖所述堆叠的至少另一部分侧表面，并且由氧化镓作为主要成分构成。
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4.发明授权Magneto-resistive effect element having spacer layer including gallium oxide layer with metal element 有权具有间隔层的磁阻效应元件包括具有金属元素的氧化镓层公开(公告)号：US08564911B2
公开(公告)日：2013-10-22
申请号：US13029415
申请日：2011-02-17
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3929 , G11B2005/3996
摘要： A magneto-resistive effect (MR) element includes: first and second magnetic layers in which a relative angle formed by magnetization directions changes according to an external magnetic field; and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer includes a main spacer layer composed of gallium oxide as a primary component and containing at least one metal element selected from a group of magnesium, zinc, indium and aluminum.
摘要翻译： 磁阻效应（MR）元件包括：由磁化方向形成的相对角度根据外部磁场而变化的第一和第二磁性层; 以及位于所述第一磁性层和所述第二磁性层之间的间隔层。 间隔层包括由氧化镓作为主要成分构成的主要间隔层，并含有至少一种选自镁，锌，铟和铝的金属元素。
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5.发明申请MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER WITH THIN CENTRAL PORTION 有权具有较薄中心部分间隔层的磁阻效应元件公开(公告)号：US20120214020A1
公开(公告)日：2012-08-23
申请号：US13031778
申请日：2011-02-22
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , B82Y10/00 , B82Y25/00 , G11B2005/3996 , Y10T428/1121
摘要： A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes in response to an external magnetic field, and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer, on an air bearing surface, has a larger film thickness at both side edge parts in a track width direction than a film thickness at a central part in a track width direction. When a region of the spacer layer on the air bearing surface is divided into quarters which are both side edge part regions and two central regions such that track width direction lengths are equivalent, an average film thickness of a region where the both side edge regions are combined is preferably larger than a region where the two central regions are combined.
摘要翻译： 磁阻效应（MR）元件包括第一和第二磁性层，其中由磁化方向形成的相对角响应于外部磁场而变化，并且间隔层位于第一磁性层和第二磁性层之间。 在空气轴承表面上的间隔层在轨道宽度方向上的两个侧边缘部分处具有比在轨道宽度方向上的中心部分处的膜厚度更大的膜厚度。 当空气轴承表面上的间隔层的区域被分成两侧边缘部分区域和两个中心区域的区域，使得轨道宽度方向长度相等时，两侧边缘区域的区域的平均膜厚度 优选地组合两个中心区域的区域。
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6.发明授权Magneto-resistive effect element, magnetic head, magnetic head slider, head gimbal assembly and hard disk drive apparatus 有权磁阻效应元件，磁头，磁头滑块，磁头万向架组件和硬盘驱动装置公开(公告)号：US08432645B2
公开(公告)日：2013-04-30
申请号：US13017200
申请日：2011-01-31
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3909 , G11B2005/3996 , Y10T428/1114 , Y10T428/1121
摘要： An MR element includes a stack, being a pillar or trapezoidal stack, including first and second magnetic layers in which a relative angle formed by magnetization directions changes according to an external magnetic field, and a spacer layer that is positioned between the first magnetic layer and the second magnetic layer, and that is provided with a main spacer layer that is composed of gallium oxide, zinc oxide or magnesium oxide as a primary component, wherein, one part of side surfaces of the stack forms a part of an air bearing surface; and a cover layer that covers at least another part of the side surfaces of the stack and that is composed of gallium oxide as a primary component.
摘要翻译： MR元件包括作为柱或梯形叠层的叠层，包括第一和第二磁性层，其中由磁化方向形成的相对角度根据外部磁场而变化;以及间隔层，其位于第一磁性层和第二磁性层之间， 第二磁性层，并且设置有由氧化镓，氧化锌或氧化镁作为主要成分构成的主间隔层，其中堆叠的一部分侧表面形成空气轴承表面的一部分; 以及覆盖层，其覆盖所述堆叠的至少另一部分侧表面，并且由氧化镓作为主要成分构成。
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7.发明申请MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER INCLUDING MAIN SPACER LAYER CONTAINING GALLIUM OXIDE AND NONMAGNETIC LAYER 有权具有间隔层的磁阻效应元件，包括含有氧化铝和非磁性层的主间隔层公开(公告)号：US20120164484A1
公开(公告)日：2012-06-28
申请号：US12979613
申请日：2010-12-28
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996 , Y10T428/1121
摘要： A magnetoresistive effect element (MR element) includes first and second magnetic layers of which relative angles formed by magnetization directions change in relation to an external magnetic field; and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned on a side closer than the second magnetic layer in regards to a substrate above which the magnetoresistive effect element is formed, and the spacer layer includes a main spacer layer made of gallium oxide as the primary component, and a first nonmagnetic layer positioned between the main spacer layer and the first magnetic layer and contains copper and gallium.
摘要翻译： 磁阻效应元件（MR元件）包括由磁化方向形成的相对角度相对于外部磁场而变化的第一和第二磁性层; 以及位于所述第一磁性层和所述第二磁性层之间的间隔层。 相对于其上形成有磁阻效应元件的基板，第一磁性层位于比第二磁性层更靠近的一侧，并且间隔层包括以氧化镓为主要成分的主间隔层，第一磁性层 位于主间隔层和第一磁性层之间并且包含铜和镓的非磁性层。
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8.发明授权Magneto-resistive effect element having spacer layer containing gallium oxide, partially oxidized copper 有权具有包含氧化镓，部分氧化铜的间隔层的磁阻效应元件公开(公告)号：US08498083B2
公开(公告)日：2013-07-30
申请号：US13049195
申请日：2011-03-16
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996 , Y10T428/1121
摘要： A magneto-resistive effect (MR) element includes first and second magnetic layers where a relative angle formed by magnetization directions changes in response to an external magnetic field and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes a main spacer layer that is composed of gallium oxide as a primary component and a bottom layer that is positioned between the main spacer layer and the first magnetic layer and that is composed of partially oxidized copper as a primary component.
摘要翻译： 磁阻效应（MR）元件包括第一和第二磁性层，其中由磁化方向形成的相对角响应于外部磁场而变化，并且间隔层位于第一磁性层和第二磁性层之间。 第一磁性层定位成比第二磁性层更靠近形成MR元件的衬底。 间隔层包括由氧化镓作为主要成分构成的主间隔层和位于主间隔层和第一磁性层之间并由部分氧化的铜作为主要成分的底层。
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9.发明授权Magneto-resistive effect element having spacer layer with thin central portion 有权具有具有薄中心部分的间隔层的磁阻效应元件公开(公告)号：US08441763B2
公开(公告)日：2013-05-14
申请号：US13031778
申请日：2011-02-22
IPC分类号： G11B5/039
CPC分类号： G11B5/3912 , B82Y10/00 , B82Y25/00 , G11B2005/3996 , Y10T428/1121
摘要： A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes in response to an external magnetic field, and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer, on an air bearing surface, has a larger film thickness at both side edge parts in a track width direction than a film thickness at a central part in a track width direction. When a region of the spacer layer on the air bearing surface is divided into quarters which are both side edge part regions and two central regions such that track width direction lengths are equivalent, an average film thickness of a region where the both side edge regions are combined is preferably larger than a region where the two central regions are combined.
摘要翻译： 磁阻效应（MR）元件包括第一和第二磁性层，其中由磁化方向形成的相对角响应于外部磁场而变化，并且间隔层位于第一磁性层和第二磁性层之间。 在空气轴承表面上的间隔层在轨道宽度方向上的两个侧边缘部分处具有比在轨道宽度方向上的中心部分处的膜厚度更大的膜厚度。 当空气轴承表面上的间隔层的区域被分成两侧边缘部分区域和两个中心区域的区域，使得轨道宽度方向长度相等时，两侧边缘区域的区域的平均膜厚度 优选地组合两个中心区域的区域。
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公开(公告)号：US08031444B2
公开(公告)日：2011-10-04
申请号：US12255105
申请日：2008-10-21
申请人： Tsutomu Chou , Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Shinji Hara , Hironobu Matsuzawa
发明人： Tsutomu Chou , Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Shinji Hara , Hironobu Matsuzawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3967 , G11B2005/3996 , H01F10/3254 , H01L43/10
摘要： The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR.
摘要翻译： 在本发明的巨磁阻器件（CPP-GMR器件）中形成间隔层的一部分的半导体氧化物层由纤锌矿结构的氧化锌组成，该氧化锌掺杂有至少一种选自以下的金属元素的掺杂剂： 的Zn，Ge，V和Cr的含量为0.05〜0.90原子％：具有获得更高MR比可以实现的优点，同时阻止面积电阻率AR的增加。
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