公开(公告)号：US20070228432A1

公开(公告)日：2007-10-04

申请号：US11651108

申请日：2007-01-09

申请人： Hiroshi Ishihara ,  Kenji Maruyama ,  Tetsuro Tamura ,  Hiromasa Hoko

发明人： Hiroshi Ishihara ,  Kenji Maruyama ,  Tetsuro Tamura ,  Hiromasa Hoko

IPC分类号： H01L29/76 ,  G11C11/22 ,  H01L21/00

CPC分类号： G11C11/22 ,  H01L21/28291 ,  H01L27/11585 ,  H01L27/1159 ,  H01L29/78391

摘要： The invention relates to a semiconductor element used for a nonvolatile semiconductor storage device or the like, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof and a manufacturing method of those, and has an object to provide a semiconductor element in which scaling and integration of cells are possible, storage characteristics of data are excellent, and reduction in power consumption is possible, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof, and a manufacturing method of those. A pn junction diode GD with a ferroelectric gate as the semiconductor element includes a gate electrode formed on a ferroelectric film, an inversion layer formation region in which an inversion layer is formed in a semiconductor substrate below the ferroelectric film according to a polarization direction of the ferroelectric film, a cathode region formed on one of both sides of the inversion layer formation region, and an anode region formed on the other of both the sides.

摘要翻译： 本发明涉及用于非易失性半导体存储器件等的半导体元件，使用该半导体存储器件的半导体存储器件，其数据写入方法，数据读取方法及其制造方法，其目的是提供 可以进行单元的缩放和积分的半导体元件，数据的存储特性优异，功耗的降低成为可能，使用该半导体元件的半导体存储装置，其数据写入方法，数据读取方法以及 制造方法。 具有铁电栅极作为半导体元件的pn结二极管GD包括形成在铁电体膜上的栅极电极，根据所述铁电体的极化方向在所述铁电体的下方的半导体基板中形成有反型层的反型层形成区域 铁电体膜，形成在反型层形成区域的两侧之一上的阴极区域和形成在两侧的另一侧的阳极区域。

公开(公告)号：US07727843B2

公开(公告)日：2010-06-01

申请号：US11651108

申请日：2007-01-09

申请人： Hiroshi Ishihara ,  Kenji Maruyama ,  Tetsuro Tamura ,  Hiromasa Hoko

发明人： Hiroshi Ishihara ,  Kenji Maruyama ,  Tetsuro Tamura ,  Hiromasa Hoko

IPC分类号： H01L21/336

CPC分类号： G11C11/22 ,  H01L21/28291 ,  H01L27/11585 ,  H01L27/1159 ,  H01L29/78391

摘要： The invention relates to a semiconductor element used for a nonvolatile semiconductor storage device or the like, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof and a manufacturing method of those, and has an object to provide a semiconductor element in which scaling and integration of cells are possible, storage characteristics of data are excellent, and reduction in power consumption is possible, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof, and a manufacturing method of those. A pn junction diode GD with a ferroelectric gate as the semiconductor element includes a gate electrode formed on a ferroelectric film, an inversion layer formation region in which an inversion layer is formed in a semiconductor substrate below the ferroelectric film according to a polarization direction of the ferroelectric film, a cathode region formed on one of both sides of the inversion layer formation region, and an anode region formed on the other of both the sides.

摘要翻译： 本发明涉及用于非易失性半导体存储器件等的半导体元件，使用该半导体存储器件的半导体存储器件，其数据写入方法，数据读取方法及其制造方法，其目的是提供 可以进行单元的缩放和积分的半导体元件，数据的存储特性优异，功耗的降低成为可能，使用该半导体元件的半导体存储装置，其数据写入方法，数据读取方法以及 制造方法。 具有铁电栅极作为半导体元件的pn结二极管GD包括形成在铁电体膜上的栅极电极，根据所述铁电体的极化方向在所述铁电体的下方的半导体基板中形成有反型层的反型层形成区域 铁电体膜，形成在反型层形成区域的两侧之一上的阴极区域和形成在两侧的另一侧的阳极区域。

公开(公告)号：US07465980B2

公开(公告)日：2008-12-16

申请号：US11220902

申请日：2005-09-08

申请人： Yoshihiro Arimoto ,  Hiroshi Ishihara ,  Tetsuro Tamura ,  Hiromasa Hoko ,  Koji Aizawa ,  Yoshiaki Tabuchi ,  Masaomi Yamaguchi ,  Yasuo Nara ,  Kazuhiro Takahashi ,  Satoshi Hasegawa

发明人： Yoshihiro Arimoto ,  Hiroshi Ishihara ,  Tetsuro Tamura ,  Hiromasa Hoko ,  Koji Aizawa ,  Yoshiaki Tabuchi ,  Masaomi Yamaguchi ,  Yasuo Nara ,  Kazuhiro Takahashi ,  Satoshi Hasegawa

IPC分类号： H01L29/76

CPC分类号： G11C11/22 ,  G11C11/5657 ,  H01L21/28291 ,  H01L29/6684 ,  H01L29/78391

摘要： A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.

摘要翻译： 铁电存储器件包括通过铁电体膜形成在半导体本体上的栅电极，第一和第二扩散区域形成在沟道区域的各个侧面的半导体本体中，其中铁电体膜包括位于第一区域附近的第一区域 所述第一扩散区域，位于所述第二扩散区域附近的第二区域和位于所述第一和第二区域之间的第三区域，其中所述第一区域，第二区域和第三区域携带各自相互独立的极化。

公开(公告)号：US20060081901A1

公开(公告)日：2006-04-20

申请号：US11220902

申请日：2005-09-08

申请人： Yoshihiro Arimoto ,  Hiroshi Ishihara ,  Tetsuro Tamura ,  Hiromasa Hoko ,  Koji Aizawa ,  Yoshiaki Tabuchi ,  Masaomi Yamaguchi ,  Yasuo Nara ,  Kazuhiro Takahashi ,  Satoshi Hasegawa

发明人： Yoshihiro Arimoto ,  Hiroshi Ishihara ,  Tetsuro Tamura ,  Hiromasa Hoko ,  Koji Aizawa ,  Yoshiaki Tabuchi ,  Masaomi Yamaguchi ,  Yasuo Nara ,  Kazuhiro Takahashi ,  Satoshi Hasegawa

IPC分类号： H01L29/94

CPC分类号： G11C11/22 ,  G11C11/5657 ,  H01L21/28291 ,  H01L29/6684 ,  H01L29/78391

摘要： A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.

摘要翻译： 铁电存储器件包括通过铁电体膜形成在半导体本体上的栅电极，第一和第二扩散区域形成在沟道区域的各个侧面的半导体本体中，其中铁电体膜包括位于第一区域附近的第一区域 所述第一扩散区域，位于所述第二扩散区域附近的第二区域和位于所述第一和第二区域之间的第三区域，其中所述第一区域，第二区域和第三区域携带各自相互独立的极化。

公开(公告)号：US09968583B2

公开(公告)日：2018-05-15

申请号：US13260864

申请日：2010-03-30

申请人： Hiroshi Kikuchi ,  Kenji Hyodo ,  Hiroshi Ishihara

发明人： Hiroshi Kikuchi ,  Kenji Hyodo ,  Hiroshi Ishihara

IPC分类号： A61K9/127 ,  A61K31/724 ,  A61K31/337 ,  A61K31/704 ,  A61K31/7048

CPC分类号： A61K31/337 ,  A61K9/1271 ,  A61K9/1278 ,  A61K31/704 ,  A61K31/7048

摘要： The present invention provides a method of manufacture of a liposome composition including a step in which: a liposome dispersion liquid containing a liposome, and further containing cyclodextrin in the liposome internal phase is provided and a step in which an active compound is introduced into said liposome internal phase, and the liposome composition.

公开(公告)号：US20090182149A1

公开(公告)日：2009-07-16

申请号：US12296902

申请日：2006-10-13

申请人： Tetsuya Kawahara ,  Hitoshi Harada ,  Hiroki Terauchi ,  Nobuhisa Watanabe ,  Masato Ueda ,  Atsushi Kamada ,  Sachiko Kikuchi ,  Hiroshi Ishihara ,  Koichi Koyama

发明人： Tetsuya Kawahara ,  Hitoshi Harada ,  Hiroki Terauchi ,  Nobuhisa Watanabe ,  Masato Ueda ,  Atsushi Kamada ,  Sachiko Kikuchi ,  Hiroshi Ishihara ,  Koichi Koyama

IPC分类号： C07D405/14

CPC分类号： C07D405/14

摘要： Salts of 2-[({4-[(2,2-dimethyl-1,3-dioxan-5-yl)methoxy]-3,5-dimethylpyridin-2-yl}methyl)sulfinyl]-1H-benzimidazole and their crystalline and amorphous forms.

摘要翻译： 2 - [（{4 - [（2,2-二甲基-1,3-二恶烷-5-基）甲氧基] -3,5-二甲基吡啶-2-基}甲基）亚磺酰基] -1H-苯并咪唑的盐及其 晶体和无定形形式。

公开(公告)号：US20070126246A1

公开(公告)日：2007-06-07

申请号：US11600088

申请日：2006-11-16

申请人： Shintaro Suzuki ,  Hiroshi Ishihara

发明人： Shintaro Suzuki ,  Hiroshi Ishihara

IPC分类号： E05B3/00

CPC分类号： B60R25/246 ,  E05B81/78 ,  G07C9/00309 ,  G07C2009/00388 ,  G07C2209/65 ,  Y10T292/57

摘要： A vehicle door opening/closing device includes a door handle provided at the exterior of a vehicle door and by which the vehicle door is opened and closed, control device executing a vehicle door opening process for the vehicle door on the basis of a user's door handle operation to open the vehicle door, input device provided at the door handle and inputting the user's door handle operation to open the vehicle door, wherein on the basis of the user's door handle operation to open the vehicle door, the control device executes the vehicle door opening process for one of vehicle doors, to which the door handle is not provided.

摘要翻译： 车门打开/关闭装置包括设置在车门外部的门把手，车门打开和关闭，通过使用者门把手执行车门的车门打开处理的控制装置 操作以打开车门，设置在门把手处的输入装置和输入用户的门把手操作以打开车门，其中，基于用户的门把手操作来打开车门，控制装置执行车门 不提供门把手的车门之一的打开过程。

公开(公告)号：US06956584B2

公开(公告)日：2005-10-18

申请号：US10300586

申请日：2002-11-21

申请人： Hiroshi Ishihara

发明人： Hiroshi Ishihara

IPC分类号： G06T11/00 ,  G06T11/40 ,  G09G5/00

CPC分类号： G06T11/40

摘要： An image processing method converts line vectors of an input graphic path and an input clip path into run sets in dot coordinates passed by the line vectors, and generates a region run describing a closed region represented by the entire path from the run sets, so as to obtain a graphic region run and a clip region run, and extracts an overlapping portion of the graphic region run and the clip region run to generate a plot region run. The scan line conversion and the clipping form a rasterizing process.

摘要翻译： 图像处理方法将输入图形路径和输入剪辑路径的线向量转换为由行向量传递的点坐标的运行集合，并且生成描述由运行集合的整个路径表示的封闭区域的区域运行，以便 获取图形区域运行和剪辑区域运行，并提取运行的图形区域的重叠部分和运行的剪辑区域以生成绘图区域运行。 扫描线转换和剪辑形成光栅化过程。

公开(公告)号：US6131967A

公开(公告)日：2000-10-17

申请号：US244460

申请日：1999-02-04

申请人： Ichiro Kondo ,  Hiroshi Ishihara ,  Toshitsugu Oda

发明人： Ichiro Kondo ,  Hiroshi Ishihara ,  Toshitsugu Oda

IPC分类号： E05B83/36 ,  E05B77/28 ,  E05B81/06 ,  E05B81/20 ,  E05B81/30 ,  E05C3/06

CPC分类号： E05B81/20 ,  E05B81/25 ,  Y10S292/23 ,  Y10T292/1047 ,  Y10T292/1082

摘要： A door lock assembly having a reduced size. The door lock assembly comprises: a closer mechanism for bringing a vehicle door from a partially closed state to a completely closed state; a locking/unlocking mechanism for bringing the vehicle door in the completely closed state to a locked state and an unlocked state; and a drive mechanism including a single motor acting as a drive source for actuating the closer mechanism and the locking/unlocking mechanism.

摘要翻译： 具有减小尺寸的门锁组件。 门锁组件包括：用于使车门从部分关闭状态到完全关闭状态的更近机构; 用于使车门处于完全关闭状态的锁定/解锁机构处于锁定状态和解锁状态; 以及包括用作致动更近机构和锁定/解锁机构的驱动源的单个电动机的驱动机构。

公开(公告)号：US5619494A

公开(公告)日：1997-04-08

申请号：US306521

申请日：1994-09-15

申请人： Toshiyuki Nishikawa ,  Hiroshi Ishihara

发明人： Toshiyuki Nishikawa ,  Hiroshi Ishihara

IPC分类号： H04L12/12 ,  H04L12/28 ,  H04L12/42 ,  H04L12/40

CPC分类号： H04L12/42

摘要： The single port of a concentrator is branched into a plurality of ports by connecting a connector for the former-stage connector to the port of the concentrator and connecting the former-stage connector of the same structure in the other access unit to the connector for the latter-stage circuit to thereby cascade a plurality of access units. The LAN is expanded by connecting the workstation to the port connector of each of the cascaded access units. The thus, connected workstations provide an overlap signal of an AC signal and a DC signal. DC signal extraction circuit in the access unit extracts the DC signal from the overlap signal. A relay drive circuit is operated by the DC signal so that a relay is switched to the port connector side and the circuit is then connected to the workstation.

摘要翻译： 集中器的单个端口通过将前级连接器的连接器连接到集中器的端口而分支成多个端口，并将另一个存取单元中相同结构的前级连接器连接到用于 后级电路，从而级联多个存取单元。 通过将工作站连接到每个级联的访问单元的端口连接器来扩展LAN。 因此，连接的工作站提供AC信号和DC信号的重叠信号。 存取单元中的直流信号提取电路从重叠信号中提取直流信号。 继电器驱动电路由直流信号操作，使得继电器切换到端口连接器侧，然后电路连接到工作站。