Photoresist residue remover composition and semiconductor circuit element production process employing the same
    2.
    发明授权
    Photoresist residue remover composition and semiconductor circuit element production process employing the same 失效
    光致抗蚀剂残渣去除剂组合物和采用其的半导体电路元件生产方法

    公开(公告)号:US07816313B2

    公开(公告)日:2010-10-19

    申请号:US12082173

    申请日:2008-04-08

    IPC分类号: H01L21/02

    摘要: A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.

    摘要翻译: 提供了一种光致抗蚀剂残渣去除剂组合物,其在干法蚀刻之后除去由抗蚀剂灰化处理形成的光致抗蚀剂残渣,在基板表面上形成任何这些铝,铜,钨和任何这些的合金的任何金属的布线 金属作为主要成分,该组合物包含一种或两种以上的无机酸和一种或两种以上的无机氟化合物。 还提供了一种用于制造半导体电路元件的方法,其中在以任何这些金属为主要成分的铝,铜,钨和任何金属的任何金属的布线形成步骤中,使用光刻胶残渣去除剂组合物 用于去除在干蚀刻之后由抗蚀剂灰化处理形成的光致抗蚀剂残渣。

    Photoresist residue remover composition and semiconductor circuit element production process employing the same
    5.
    发明申请
    Photoresist residue remover composition and semiconductor circuit element production process employing the same 失效
    光致抗蚀剂残渣去除剂组合物和采用其的半导体电路元件生产方法

    公开(公告)号:US20080318424A1

    公开(公告)日:2008-12-25

    申请号:US12082173

    申请日:2008-04-08

    IPC分类号: H01L21/44

    摘要: A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.

    摘要翻译: 提供了一种光致抗蚀剂残渣去除剂组合物,其在干法蚀刻之后除去由抗蚀剂灰化处理形成的光致抗蚀剂残渣,在基板表面上形成任何这些铝,铜,钨和任何这些的合金的任何金属的布线 金属作为主要成分,该组合物包含一种或两种以上的无机酸和一种或两种以上的无机氟化合物。 还提供了一种用于制造半导体电路元件的方法,其中在以任何这些金属为主要成分的铝,铜,钨和任何金属的任何金属的布线形成步骤中,使用光刻胶残渣去除剂组合物 用于去除在干蚀刻之后由抗蚀剂灰化处理形成的光致抗蚀剂残渣。

    Lubricant composition, bearing apparatus, sliding member and triazine-ring compound
    7.
    发明申请
    Lubricant composition, bearing apparatus, sliding member and triazine-ring compound 审中-公开
    润滑剂组合物,轴承装置,滑动构件和三嗪环化合物

    公开(公告)号:US20070054814A1

    公开(公告)日:2007-03-08

    申请号:US11512084

    申请日:2006-08-30

    IPC分类号: C07D251/54

    CPC分类号: C07D251/54

    摘要: The novel lubricant composition is disclosed. The composition comprises at least one compound, exhibiting a minimum friction coefficient under a pressure equal to or greater than 10 MPa with the increase of a pressure and a viscosity-pressure coefficient equal to or less than 20 GPa−1 at 40° C., represented by a formula (1). In the formula, Y and Z respectively represent a single bond or a bivalent linking group selected from the group consisting of NRa where Ra is a hydrogen atom or a C1-30 alkyl group, oxygen, sulfur, carbonyl, sulfonyl and any combinations thereof; A and B respectively represent a substituted or non-substituted, alkyl group, alkenyl group, alkynyl group, aryl group or heterocyclic group; T is —S—R1, —O—R2 or —NR3R4; and R1, R2, R3 and R4 respectively represent a substituted or non-substituted, alkyl group, alkenyl group, alkynyl group, aryl group or heterocyclic group.

    摘要翻译: 公开了新的润滑剂组合物。 该组合物包含至少一种化合物,在压力等于或大于10MPa的压力和粘度压力系数等于或小于20GPa -1的情况下表现出最小的摩擦系数。 > 40℃,由式(1)表示。 在该式中,Y和Z分别表示单键或选自NR a的二价连接基团,其中R a是氢原子或C 1 -C 30烷基,氧,硫, 羰基,磺酰基及其任何组合; A和B分别表示取代或未取代的烷基,烯基,炔基,芳基或杂环基; T是-S-R 1,-O-R 2或-NR 3 R 4; R 1,R 2,R 3和R 4分别表示取代或未取代的烷基 烯基,炔基,芳基或杂环基。

    Sheet post-treatment device and image forming apparatus provided with the same
    8.
    发明授权
    Sheet post-treatment device and image forming apparatus provided with the same 有权
    片材后处理装置和具有该片材后处理装置的图像形成装置

    公开(公告)号:US06681097B2

    公开(公告)日:2004-01-20

    申请号:US10265380

    申请日:2002-10-07

    IPC分类号: G03G1500

    摘要: A sheet post-treatment device for receiving a sheet discharged from an image forming apparatus to accumulate and match it comprises: routes including a first conveying route for receiving the sheet discharged from the image forming apparatus; a switch-back route for inverting the received sheet; a second conveying route for conveying the inverted sheet; and a third conveying route for delivering the sheet conveyed onto a treating tray for accumulating and matching the sheet thereon, the switch-back route being arranged downward of the treating tray. The second conveying route is formed along the side wall of the sheet post-treatment device, and at least a part of the switch-back route is exposed.

    摘要翻译: 一种纸张后处理装置,用于接收从图像形成装置排出的纸张以便进行累积和匹配,其包括:包括用于接收从图像形成装置排出的纸张的第一输送路线的路线; 用于反转所接收的纸张的切换路线; 用于输送倒置片材的第二输送路径; 以及第三输送路径,用于输送传送到处理托盘上的纸张,用于在其上堆积和匹配纸张,该回切路线布置在处理托盘的下方。 第二输送路径沿着片材后处理装置的侧壁形成,并且至少一部分折回路线被暴露。

    Image forming apparatus and method for determining suitability of replaceable component
    9.
    发明授权
    Image forming apparatus and method for determining suitability of replaceable component 有权
    用于确定可更换部件适用性的图像形成装置和方法

    公开(公告)号:US06678482B2

    公开(公告)日:2004-01-13

    申请号:US10243944

    申请日:2002-09-16

    IPC分类号: G03G1500

    摘要: An object of the invention is to make an exact judgment on suitability of a replaceable component such as a toner supplying container with use of an existing mechanism of an image forming apparatus, without additionally providing a data storage component designed for a consumable product which is detachably attached to the apparatus, or a data reading component to be placed in the image forming apparatus main body. In an incorporated control section, a specific part of a replaceable component, which is placed on an original platform prior to being loaded into the apparatus, is optically scanned to read image information, and, based on the reading result, whether or not the replaceable component is suitable for the image forming apparatus is judged.

    摘要翻译: 本发明的目的是对使用图像形成装置的现有机构的可更换部件如调色剂供给容器的适用性做出准确的判断,而不另外提供设计用于可拆卸式的消费品的数据存储部件 附接到该装置,或者将要放置在图像形成装置主体中的数据读取部件。 在并入的控制部分中,光学地扫描在被装载到装置中之前放置在原始平台上的可更换部件的特定部分,以读取图像信息,并且基于读取结果,是否可更换 组件适用于图像形成设备的判断。

    Method of fabricating a semiconductor device comprising a MOS portion
and a bipolar portion
    10.
    发明授权
    Method of fabricating a semiconductor device comprising a MOS portion and a bipolar portion 失效
    制造包括MOS部分和双极部分的半导体器件的方法

    公开(公告)号:US6004840A

    公开(公告)日:1999-12-21

    申请号:US744524

    申请日:1996-11-06

    IPC分类号: H01L21/768 H01L21/8249

    CPC分类号: H01L21/76895 H01L21/8249

    摘要: In a semiconductor device, a first conductive film made of, for example, polysilicon is formed on the element region of the semiconductor substrate. An insulation film is formed on the semiconductor substrate, for covering at least the first conductive film. A second conductive film covers at least the end portion of the insulation film. The first conductive film is used as a gate electrode of the MOS transistor, and the second conductive film is used as a protection film for covering and protecting the end portion of the insulation film and a lead-out electrode of the bipolar transistor. The end portion of the insulation film is covered and protected by the second conductive film obtained by patterning the conductive layer made of, for example, polysilicon. Further, the conductive layer is patterned so that stepped portions formed on the insulation film and the end portion of the insulation film are covered, and using this pattern, anisotropic etching is carried out. Thus, formation of residue on the side-wall of the second conductive film, on the stepped portions formed as covering the first conductive film, can be avoided. In a later step, the pattern of the second conductive film which covers the stepped portion is removed by etching.

    摘要翻译: 在半导体器件中,在半导体衬底的元件区域上形成由例如多晶硅制成的第一导电膜。 绝缘膜形成在半导体衬底上,用于至少覆盖第一导电膜。 第二导电膜至少覆盖绝缘膜的端部。 第一导电膜用作MOS晶体管的栅电极,第二导电膜用作覆盖和保护绝缘膜的端部和双极晶体管的引出电极的保护膜。 绝缘膜的端部由通过图案化例如由多晶硅制成的导电层获得的第二导电膜覆盖和保护。 此外,导电层被图案化,使得形成在绝缘膜上的阶梯部分和绝缘膜的端部被覆盖,并且使用该图案进行各向异性蚀刻。 因此,可以避免在形成为覆盖第一导电膜的阶梯部分上在第二导电膜的侧壁上形成残留物。 在后续步骤中,通过蚀刻去除覆盖阶梯部分的第二导电膜的图案。