摘要:
Interlayer insulating films 5,7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and a counter electrode 8C formed on a silicon wafer 1. The interlayer insulating films 5,7 comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10−8 A/cm2.
摘要翻译:设置在存储电容器单元8中的层间绝缘膜5,7(绝缘膜)形成在形成在硅晶片1上的栅电极3和对电极8C之间。层间绝缘膜5,7包括环硼氮烷基树脂, 具有不大于2.6的比介电常数,5GPa或更大的杨氏模量和不大于1×10 -8 A / cm 2的泄漏电流。
摘要:
Interlayer insulating films 5,7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and a counter electrode 8C formed on a silicon wafer 1. The interlayer insulating films 5,7 comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10−8 A/cm2.
摘要翻译:设置在存储电容器单元8中的层间绝缘膜5,7(绝缘膜)形成在形成在硅晶片1上的栅电极3和对电极8C之间。层间绝缘膜5,7包括环硼氮烷基树脂, 具有不大于2.6的比介电常数,5GPa或更大的杨氏模量和不大于1×10 -8 A / cm 2的漏电流。
摘要:
The present invention discloses a sulfur-containing phenolic resin which comprises an organic group represented by the following formula (1): —R1—S—R2—S—R1— (1) wherein R1 represents a hydrocarbon group having 2 to 6 carbon atoms, R2 represents a hydrocarbon group having 1 to 10 carbon atoms, between a phenolic carbon and a phenolic carbon, phenol derivatives represented by the following formula (5): wherein R5 represents a C2-3 alkylene group, R6 represents a C1-10 alkylene group, G represents H, a C1-10 alkyl group, etc., and an epoxy resin composition containing (A) a curing agent of the above-mentioned formula (5) and (B) an epoxy resin as essential components.