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公开(公告)号：US07979154B2
公开(公告)日：2011-07-12
申请号：US11959968
申请日：2007-12-19
CPC分类号： G05B19/41875 , G05B2219/32179 , G05B2219/32221 , G05B2219/45031 , Y02P90/22
摘要： A management system includes a variable-period setting unit that sets a variable period in which quality-control values vary. Then, a retrieving unit retrieves events sandwiching the variable period. The events can be a maintenance of the semiconductor manufacturing device and/or a change of a correction value. An analysis-period setting unit sets an analysis period for analyzing a cause of variation of the quality-control values between the events retrieved by the retrieving unit.
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公开(公告)号：US20080147226A1
公开(公告)日：2008-06-19
申请号：US11959968
申请日：2007-12-19
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32179 , G05B2219/32221 , G05B2219/45031 , Y02P90/22
摘要： A management system includes a variable-period setting unit that sets a variable period in which quality-control values vary. Then, a retrieving unit retrieves events sandwiching the variable period. The events can be a maintenance of the semiconductor manufacturing device and/or a change of a correction value. An analysis-period setting unit sets an analysis period for analyzing a cause of variation of the quality-control values between the events retrieved by the retrieving unit.
摘要翻译： 管理系统包括设定质量控制值变化的可变周期的可变周期设定部。 然后，检索单元检索夹着可变周期的事件。 这些事件可以是半导体制造装置的维护和/或校正值的改变。 分析周期设定单元设定用于分析由检索单元检索的事件之间的质量控制值的变化原因的分析期间。
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3.发明申请公开(公告)号：US20070276528A1
公开(公告)日：2007-11-29
申请号：US11727824
申请日：2007-03-28
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32075 , G05B2219/32222 , G05B2219/45031 , Y02P90/22
摘要： According to the present, there is proved a semiconductor fabrication apparatus management system having: a sensor which monitors and outputs a plurality of apparatus parameters of a semiconductor fabrication apparatus which fabricates a semiconductor device; a measurement unit which measures a dimensional value of the semiconductor device, and outputs the dimensional value as dimensional data; an apparatus parameter storage unit which stores the apparatus parameters; a dimensional data storage unit which stores the dimensional data; an apparatus parameter controller which calculates predicted dimensional data by extracting the dimensional data from the dimensional data storage unit, and controls at least one of the plurality of apparatus parameters on the basis of the predicted dimensional data; and an abnormality factor extraction unit which analyzes correlations between the controlled apparatus parameter and other apparatus parameters, and extracts an abnormal apparatus parameter on the basis of a calculated correlation coefficient.
摘要翻译： 根据现在，已经证明了一种半导体制造装置管理系统，其具有：监视并输出制造半导体装置的半导体制造装置的多个装置参数的传感器; 测量单元，其测量半导体器件的尺寸值，并将该尺寸值作为尺寸数据输出; 装置参数存储单元，其存储所述装置参数; 存储尺寸数据的尺寸数据存储单元; 装置参数控制器，其通过从所述尺寸数据存储单元提取所述尺寸数据来计算预测尺寸数据，并且基于所述预测尺寸数据来控制所述多个装置参数中的至少一个; 以及异常因子提取单元，其分析受控设备参数和其他设备参数之间的相关性，并且基于计算的相关系数提取异常设备参数。
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公开(公告)号：US20110245956A1
公开(公告)日：2011-10-06
申请号：US13067542
申请日：2011-06-08
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32179 , G05B2219/32221 , G05B2219/45031 , Y02P90/22
摘要： A management system includes a variable-period setting unit that sets a variable period in which quality-control values vary. Then, a retrieving unit retrieves events sandwiching the variable period. The events can be a maintenance of the semiconductor manufacturing device and/or a change of a correction value. An analysis-period setting unit sets an analysis period for analyzing a cause of variation of the quality-control values between the events retrieved by the retrieving unit.
摘要翻译： 管理系统包括设定质量控制值变化的可变周期的可变周期设定部。 然后，检索单元检索夹着可变周期的事件。 这些事件可以是半导体制造装置的维护和/或校正值的改变。 分析周期设定单元设定用于分析由检索单元检索的事件之间的质量控制值的变化原因的分析期间。
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5.发明授权公开(公告)号：US07742834B2
公开(公告)日：2010-06-22
申请号：US11727824
申请日：2007-03-28
CPC分类号： G05B19/41875 , G05B2219/32075 , G05B2219/32222 , G05B2219/45031 , Y02P90/22
摘要： According to the present, there is proved a semiconductor fabrication apparatus management system having:a sensor which monitors and outputs a plurality of apparatus parameters of a semiconductor fabrication apparatus which fabricates a semiconductor device;a measurement unit which measures a dimensional value of the semiconductor device, and outputs the dimensional value as dimensional data;an apparatus parameter storage unit which stores the apparatus parameters;a dimensional data storage unit which stores the dimensional data;an apparatus parameter controller which calculates predicted dimensional data by extracting the dimensional data from the dimensional data storage unit, and controls at least one of the plurality of apparatus parameters on the basis of the predicted dimensional data; andan abnormality factor extraction unit which analyzes correlations between the controlled apparatus parameter and other apparatus parameters, and extracts an abnormal apparatus parameter on the basis of a calculated correlation coefficient.
摘要翻译： 根据现在，已经证明了一种半导体制造装置管理系统，其具有：监视并输出制造半导体装置的半导体制造装置的多个装置参数的传感器; 测量单元，其测量半导体器件的尺寸值，并将该尺寸值作为尺寸数据输出; 装置参数存储单元，其存储所述装置参数; 存储尺寸数据的尺寸数据存储单元; 装置参数控制器，其通过从所述尺寸数据存储单元提取所述尺寸数据来计算预测尺寸数据，并且基于所述预测尺寸数据来控制所述多个装置参数中的至少一个; 以及异常因子提取单元，其分析受控设备参数和其他设备参数之间的相关性，并且基于计算的相关系数提取异常设备参数。
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6.发明授权公开(公告)号：US07970486B2
公开(公告)日：2011-06-28
申请号：US11714231
申请日：2007-03-06
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32194 , G05B2219/45031 , Y02P90/18 , Y02P90/22
摘要： A method for controlling a semiconductor manufacturing apparatus for processing wafers divided for each lot, has acquiring quality control value data group containing quality control value data of wafers in a plurality of lots previously processed, and an equipment engineering system parameter group containing equipment engineering system parameters corresponding to the wafers; creating a prediction formula of quality control value data, acquiring a first equipment engineering system parameters; inputting the first equipment engineering system parameters to the prediction formula, and performing calculation to predict first quality control value data of the wafers in the first lot; determining processing of the wafers corresponding to the first quality control value data; acquiring measured first quality control value data of the wafers in the first lot; replacing the quality control value data corresponding to the wafers in the first processed lot; updating the prediction formula.
摘要翻译： 一种用于控制用于处理每批批次的晶片的半导体制造装置的方法，具有包含先前处理的多个批次中的晶片的质量控制值数据的采集质量控制值数据组，以及包含设备工程系统参数的设备工程系统参数组 对应于晶片; 创建质量控制值数据预测公式，获取第一设备工程系统参数; 将第一设备工程系统参数输入到预测公式中，并且执行计算以预测第一批中的晶片的第一质量控制值数据; 确定与第一质量控制值数据对应的晶片的处理; 获取第一批中的晶片的测量的第一质量控制值数据; 替换与第一处理批次中的晶片对应的质量控制值数据; 更新预测公式。
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7.发明申请公开(公告)号：US20070225853A1
公开(公告)日：2007-09-27
申请号：US11714231
申请日：2007-03-06
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32194 , G05B2219/45031 , Y02P90/18 , Y02P90/22
摘要： A method for controlling a semiconductor manufacturing apparatus for processing wafers divided for each lot, has acquiring quality control value data group containing quality control value data of wafers in a plurality of lots previously processed, and an equipment engineering system parameter group containing equipment engineering system parameters corresponding to the wafers; creating a prediction formula of quality control value data, acquiring a first equipment engineering system parameters; inputting the first equipment engineering system parameters to the prediction formula, and performing calculation to predict first quality control value data of the wafers in the first lot; determining processing of the wafers corresponding to the first quality control value data; acquiring measured first quality control value data of the wafers in the first lot; replacing the quality control value data corresponding to the wafers in the first processed lot; updating the prediction formula.
摘要翻译： 一种用于控制用于处理每批批次的晶片的半导体制造装置的方法，具有包含先前处理的多个批次中的晶片的质量控制值数据的采集质量控制值数据组，以及包含设备工程系统参数的设备工程系统参数组 对应于晶片; 创建质量控制值数据预测公式，获取第一设备工程系统参数; 将第一设备工程系统参数输入到预测公式中，并且执行计算以预测第一批中的晶片的第一质量控制值数据; 确定与第一质量控制值数据对应的晶片的处理; 获取第一批中的晶片的测量的第一质量控制值数据; 替换与第一处理批次中的晶片对应的质量控制值数据; 更新预测公式。
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8.发明授权Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them 失效具有ID标记的半导体晶圆，其半导体器件的制造方法和制造方法公开(公告)号：US07700381B2
公开(公告)日：2010-04-20
申请号：US11350027
申请日：2006-02-09
申请人： Tsunetoshi Arikado , Masao Iwase , Soichi Nadahara , Yuso Udo , Yukihiro Ushiku , Shinichi Nitta , Moriya Miyashita , Junji Sugamoto , Hiroaki Yamada , Hajime Nagano , Katsujiro Tanzawa , Hiroshi Matsushita , Norihiko Tsuchiya , Katsuya Okumura
发明人： Tsunetoshi Arikado , Masao Iwase , Soichi Nadahara , Yuso Udo , Yukihiro Ushiku , Shinichi Nitta , Moriya Miyashita , Junji Sugamoto , Hiroaki Yamada , Hajime Nagano , Katsujiro Tanzawa , Hiroshi Matsushita , Norihiko Tsuchiya , Katsuya Okumura
CPC分类号： H01L23/544 , H01L2223/54406 , H01L2223/54413 , H01L2223/54433 , H01L2223/54493 , H01L2924/0002 , Y10S438/974 , H01L2924/00
摘要： A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.
摘要翻译： 半导体晶片具有沿其周边形成的斜面轮廓，形成在晶片上的产品和形成在斜面轮廓上的ID标记。 ID标记至少显示产品的性能，制造条件和测试结果。
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9.发明申请Defect detection system, defect detection method, and defect detection program 失效缺陷检测系统，缺陷检测方法和缺陷检测程序公开(公告)号：US20080004823A1
公开(公告)日：2008-01-03
申请号：US11812398
申请日：2007-06-19
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G01N21/9501 , G05B2219/32221 , G05B2219/32222 , Y02P90/04 , Y02P90/22
摘要： A defect detection system includes a data acquiring section that acquires time series data of device parameter of each manufacturing device including an exposure device, and information on defect distribution in an area with a size smaller than a chip area size, a pattern classifying section that assembles the information on the defect distribution in units of shot or chip areas, and classifies the distributions to a defect pattern, a feature quantity calculating section that processes the time series data and calculates a feature quantity, a significant difference test section that calculates occurrence frequency distributions of the shot or chip area wherein the defect pattern to the feature quantity exists and does not exist, respectively, and determines the presence/absence of significant difference between the frequency distributions, and a defect detecting section that detects the device parameter corresponding to the feature quantity as the cause of defect of the defect pattern.
摘要翻译： 缺陷检测系统包括数据获取部分，其获取包括曝光装置的每个制造装置的装置参数的时间序列数据以及尺寸小于芯片面积尺寸的区域中的缺陷分布的信息;模式分类部， 关于以镜头或码片区域为单位的缺陷分布的信息，并将分布分类为缺陷图案，处理时间序列数据并计算特征量的特征量计算部分，计算出现频率分布的显着差异测试部分 分别存在特征量的缺陷图案并且不存在的拍摄或切片区域，并且确定频率分布之间存在/不存在显着差异;以及缺陷检测部分，其检测与特征对应的设备参数 数量作为缺陷模式缺陷的原因。
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10.发明授权Defect detection system, defect detection method, and defect detection program 失效缺陷检测系统，缺陷检测方法和缺陷检测程序公开(公告)号：US07529631B2
公开(公告)日：2009-05-05
申请号：US11812398
申请日：2007-06-19
IPC分类号： G01B5/30
CPC分类号： G05B19/41875 , G01N21/9501 , G05B2219/32221 , G05B2219/32222 , Y02P90/04 , Y02P90/22
摘要： A defect detection system includes a data acquiring section that acquires time series data of device parameter of each manufacturing device including an exposure device, and information on defect distribution in an area with a size smaller than a chip area size, a pattern classifying section that assembles the information on the defect distribution in units of shot or chip areas, and classifies the distributions to a defect pattern, a feature quantity calculating section that processes the time series data and calculates a feature quantity, a significant difference test section that calculates occurrence frequency distributions of the shot or chip area wherein the defect pattern to the feature quantity exists and does not exist, respectively, and determines the presence/absence of significant difference between the frequency distributions, and a defect detecting section that detects the device parameter corresponding to the feature quantity as the cause of defect of the defect pattern.
摘要翻译： 缺陷检测系统包括数据获取部分，其获取包括曝光装置的每个制造装置的装置参数的时间序列数据以及尺寸小于芯片面积尺寸的区域中的缺陷分布的信息;模式分类部， 关于以镜头或码片区域为单位的缺陷分布的信息，并将分布分类为缺陷图案，处理时间序列数据并计算特征量的特征量计算部分，计算出现频率分布的显着差异测试部分 分别存在特征量的缺陷图案并且不存在的拍摄或切片区域，并且确定频率分布之间存在/不存在显着差异;以及缺陷检测部分，其检测与特征对应的设备参数 数量作为缺陷模式缺陷的原因。
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