Method for the preparation of ultra-fine hollow glass spheres
    2.
    发明授权
    Method for the preparation of ultra-fine hollow glass spheres 失效
    超细中空玻璃球的制备方法

    公开(公告)号:US5017523A

    公开(公告)日:1991-05-21

    申请号:US491427

    申请日:1990-03-09

    摘要: Ultra-fine hollow glass spheres suitable as a filler in light-weight composite materials for building use and the like can be prepared from a fine powder of volcanic glass even when the starting powder has a particle size as fine as 20 .mu.m or smaller. The inventive method comprises an acid-leaching treatment of the starting powder using hydrochloric or sulfuric acid under hydrothermal conditions at 150.degree.-200.degree. C. to modify the chemical composition in the surface layer of the particles and a subsequent heat treatment of the acid-treated particles at a specified high temperature to effect expansion by the water vapor produced from the structural water in the softened particles. By virtue of the modified composition in the surface layer and in contrast to the prior art method without the acid treatment, a good balance can be obtained between the rate of water vapor release and softening of the particles even when the particle size is extremely small to facilitate expansion of the particles.

    摘要翻译: 即使起始粉末的粒径为20μm以下,也可以由火山玻璃的微细粉末制备适合作为建筑用轻质复合材料的填料的超细中空玻璃球。 本发明的方法包括在150-2200℃的水热条件下使用盐酸或硫酸对起始粉末进行酸浸处理,以改变颗粒表层的化学组成,随后热处理酸 - 在特定的高温下处理的颗粒通过由软化的颗粒中的结构水产生的水蒸汽进行膨胀。 由于表面层中的改性组合物,与不进行酸处理的现有技术方法形成对照,即使在粒径非常小的情况下,也可以获得水蒸气释放速率和颗粒软化之间的良好平衡 有助于颗粒的膨胀。

    Piezoelectric element and method for manufacturing
    3.
    发明授权
    Piezoelectric element and method for manufacturing 失效
    压电元件及其制造方法

    公开(公告)号:US07508120B2

    公开(公告)日:2009-03-24

    申请号:US10543119

    申请日:2004-01-21

    IPC分类号: H01L41/09

    CPC分类号: H01L41/316

    摘要: A lower electrode is formed on a silica glass substrate or a stainless substrate. Through a sputtering process, a thin film of aluminum nitride and/or zinc oxide is formed on the lower substrate so that the degree of dipole-orientation becomes 55% or more, and thereby a piezoelectric thin film is formed. And an upper electrode is formed on the piezoelectric thin film.A piezoelectric device has a piezoelectric layer made of aluminum nitride and/or zinc oxide. Aluminum nitride and zinc oxide with a crystal structure have inborn piezoelectric characteristics because their crystal structures are not symmetrical, they do not have Curie temperature unlike ferroelectrics, and in aluminum nitride and zinc oxide, magnetic transition does not occur even at high temperature, so that they never lose piezoelectric characteristics until crystal melts or sublimates.

    摘要翻译: 在石英玻璃基板或不锈钢基板上形成下电极。 通过溅射工艺,在下基板上形成氮化铝和/或氧化锌薄膜,使得偶极取向度达到55%以上,从而形成压电薄膜。 并且在压电薄膜上形成上电极。 压电装置具有由氮化铝和/或氧化锌制成的压电层。 具有晶体结构的氮化铝和氧化锌具有先天的压电特性,因为它们的晶体结构不对称,它们不像铁电体那样具有居里温度,并且在氮化铝和氧化锌中,即使在高温下也不会发生磁转变,因此 在晶体熔化或升华之前,它们不会失去压电特性。

    Wurtzite thin film, laminate containing wurtzite crystalline layer and their manufacturing methods
    4.
    发明授权
    Wurtzite thin film, laminate containing wurtzite crystalline layer and their manufacturing methods 有权
    纤锌矿薄膜,含纤锌矿结晶层的层压板及其制造方法

    公开(公告)号:US07642693B2

    公开(公告)日:2010-01-05

    申请号:US10556663

    申请日:2004-05-14

    IPC分类号: H01L41/083

    摘要: A thin film made of a wurtzite structure compound is manufactured by a reactive sputtering using a metal material as a target, and a nitrogen gas or oxygen gas as a reactive gas. By optimizing film-forming conditions when manufacturing the film, it is possible to obtain a wurtzite thin film whose polarization directions of crystal grains are aligned in a uniform direction. There is provided a laminate including a first wurtzite crystalline layer made of a wurtzite crystalline structure compound is formed in advance between a substrate and a functional material layer that is a ground. Thus it is possible to improve the crystallinity and crystalline orientation of a second wurtzite crystalline layer on the functional material layer.

    摘要翻译: 通过使用金属材料作为靶的反应性溅射和作为反应气体的氮气或氧气制造由纤锌矿结构化合物制成的薄膜。 通过在制造膜时优化成膜条件,可以获得其晶粒的极化方向在均匀方向上排列的纤锌矿薄膜。 提供了一种层压体,其包括在基体和作为地面的功能材料层之间预先形成由纤锌矿结晶化合物制成的第一纤锌矿结晶层。 因此,可以提高功能材料层上的第二纤锌矿结晶层的结晶度和结晶取向性。

    Light-emitting device, display device, and stress sensor
    6.
    发明授权
    Light-emitting device, display device, and stress sensor 失效
    发光装置,显示装置和应力传感器

    公开(公告)号:US07408297B2

    公开(公告)日:2008-08-05

    申请号:US10508035

    申请日:2003-03-18

    IPC分类号: H05B33/00 H05B33/22

    CPC分类号: G01L1/24 H01L41/08

    摘要: A stacked structure (1) includes an electrostriction layer (2) including an electric inductive distortion material and a stress light-emitting layer (3) including a stress light-emitting material. When applying a voltage to the electrostriction layer (2) in the stacked structure (1), the electric inductive distortion material deforms, thereby the electrostriction layer (2) deforms. The deformation of the electrostriction layer (2) causes an external force to act on the stress light-emitting material of the stress light-emitting layer (3), and the stress light-emitting layer (3) emits light, accordingly. That is, by applying the voltage to the stacked structure (1), the stacked structure (1) can emit the light.

    摘要翻译: 层叠结构(1)包括电致变形材料的电致伸缩层(2)和包含应力发光材料的应力发光层(3)。 当在堆叠结构(1)中向电致伸缩层(2)施加电压时,电感应变形材料变形,由此电致伸缩层(2)变形。 电致伸缩层(2)的变形引起外力作用在应力发光层(3)的应力发光材料上,应力发光层(3)相应地发光。 也就是说,通过对堆叠结构(1)施加电压,堆叠结构(1)可以发光。

    Piezoelectric element and method for manufacturing

    公开(公告)号:US20060131680A1

    公开(公告)日:2006-06-22

    申请号:US10543119

    申请日:2004-01-21

    IPC分类号: H01L29/84

    CPC分类号: H01L41/316

    摘要: A lower electrode is formed on a silica glass substrate or a stainless substrate. Through a sputtering process, a thin film of aluminum nitride and/or zinc oxide is formed on the lower substrate so that the degree of dipole-orientation becomes 55% or more, and thereby a piezoelectric thin film is formed. And an upper electrode is formed on the piezoelectric thin film. A piezoelectric device has a piezoelectric layer made of aluminum nitride and/or zinc oxide. Aluminum nitride and zinc oxide with a crystal structure have inborn piezoelectric characteristics because their crystal structures are not symmetrical, they do not have Curie temperature unlike ferroelectrics, and in aluminum nitride and zinc oxide, magnetic transition does not occur even at high temperature, so that they never lose piezoelectric characteristics until crystal melts or sublimates.

    Piezoelectric device comprising ultrahighly-oriented aluminum nitride thin film and its manufacturing method
    9.
    发明授权
    Piezoelectric device comprising ultrahighly-oriented aluminum nitride thin film and its manufacturing method 失效
    包含超高取向氮化铝薄膜的压电器件及其制造方法

    公开(公告)号:US07233094B2

    公开(公告)日:2007-06-19

    申请号:US10516333

    申请日:2003-05-29

    IPC分类号: H01L41/04 H01L41/18 H04R17/00

    CPC分类号: H01L41/316 Y10T29/42

    摘要: The present invention has an objective to provide a high performance piezoelectric element in which is formed an aluminum nitride thin film free from hillocks, cracks, and peeling which exhibits superhigh c-axis orientation, by forming a bottom electrode from a W layer with no intervening adhesive layer on a glass or other cheap substrate. The piezoelectric element of the present invention is a piezoelectric element using a superhigh-oriented aluminum nitride thin film characterized in that the piezoelectric element is free from hillocks, cracks, and peeling and includes a stack structure in which a bottom electrode, a piezoelectric body thin film, and a top electrode are sequentially formed on a substrate; the bottom electrode is made of an oriented W layer of which a (111) plane of W is parallel to a surface of the substrate; and the piezoelectric body thin film is formed of a c-axis-oriented aluminum nitride thin film having a rocking curve full width half maximum (RCFWHM) not exceeding 2.5°.

    摘要翻译: 本发明的目的是提供一种高性能压电元件,其通过从W层形成底部电极而不间断地形成不具有超高c轴取向的小丘,裂纹和剥离的氮化铝薄膜 粘合剂层在玻璃或其他便宜的基材上。 本发明的压电元件是使用超高取向氮化铝薄膜的压电元件,其特征在于,压电元件没有小丘,裂纹和剥离,并且包括堆叠结构,其中底部电极,压电体薄 膜和顶电极依次形成在基板上; 底部电极由取向的W层制成,其中W(111)面平行于衬底的表面; 并且压电体薄膜由具有不超过2.5°的摇摆曲线全宽半最大值(RCFWHM)的c轴取向氮化铝薄膜形成。

    Piezoelectric device comprising ultrahighly-orientated aluminum nitride thin film and its manufacturing method
    10.
    发明申请
    Piezoelectric device comprising ultrahighly-orientated aluminum nitride thin film and its manufacturing method 失效
    包含超高取向氮化铝薄膜的压电器件及其制造方法

    公开(公告)号:US20050236710A1

    公开(公告)日:2005-10-27

    申请号:US10516333

    申请日:2003-05-29

    CPC分类号: H01L41/316 Y10T29/42

    摘要: The present invention has an objective to provide a high performance piezoelectric element in which is formed an aluminum nitride thin film free from hillocks, cracks, and peeling which exhibits superhigh c-axis orientation, by forming a bottom electrode from a W layer with no intervening adhesive layer on a glass or other cheap substrate. The piezoelectric element of the present invention is a piezoelectric element using a superhigh-oriented aluminum nitride thin film characterized in that the piezoelectric element is free from hillocks, cracks, and peeling and includes a stack structure in which a bottom electrode, a piezoelectric body thin film, and a top electrode are sequentially formed on a substrate; the bottom electrode is made of an oriented W layer of which a (111) plane of W is parallel to a surface of the substrate; and the piezoelectric body thin film is formed of a c-axis-oriented aluminum nitride thin film having a rocking curve full width half maximum (RCFWHM) not exceeding 2.5°.

    摘要翻译: 本发明的目的是提供一种高性能压电元件,其通过从W层形成底部电极而不间断地形成不具有超高c轴取向的小丘,裂纹和剥离的氮化铝薄膜 粘合剂层在玻璃或其他便宜的基材上。 本发明的压电元件是使用超高取向氮化铝薄膜的压电元件,其特征在于,压电元件没有小丘,裂纹和剥离,并且包括堆叠结构,其中底部电极,压电体薄 膜和顶电极依次形成在基板上; 底部电极由取向的W层制成,其中W(111)面平行于衬底的表面; 并且压电体薄膜由具有不超过2.5°的摇摆曲线全宽半最大值(RCFWHM)的c轴取向氮化铝薄膜形成。