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62 条记录 (耗时 0.031 秒)

    High-frequency signal generator and radar module
    1.
    发明授权
    High-frequency signal generator and radar module 失效

    公开(公告)号：US5717400A

    公开(公告)日：1998-02-10

    申请号：US400185

    申请日：1995-02-24

    申请人： Hiroshi Uematsu ,  Hiroyuki Ando ,  Tsutomu Yoneyama ,  Nobuyoshi Takeuchi ,  Shigeki Kato

    发明人： Hiroshi Uematsu ,  Hiroyuki Ando ,  Tsutomu Yoneyama ,  Nobuyoshi Takeuchi ,  Shigeki Kato

    IPC分类号： G01S7/03 ,  G01S7/35 ,  G01S13/34 ,  H03B9/14 ,  H03B7/14

    CPC分类号： H03B9/141 ,  G01S7/032 ,  G01S13/34 ,  G01S7/35 ,  H03B2009/126

    摘要： A radar module includes a high-frequency signal generator comprising upper and lower parallel conductive plates, at least one dielectric rod held between the parallel conductive plates, a metal diode mount held between the parallel conductive plates, a gunn diode member mounted on a side of the diode mount, and a printed-circuit board mounted on the side of the diode mount in covering relationship to the gunn diode member and having a bias supply circuit on its surface for supplying a bias voltage to the gunn diode member. One terminal of the gunn diode member extends through a through hole defined in the printed-circuit board, is exposed in the vicinity of the surface of the diode mount, and is connected to the bias supply circuit. The printed-circuit board has a rectangular metal pattern dimensionally adjustable for adjusting the oscillation frequency of the gunn diode member, and a varactor diode for modulating the frequency of a signal generated by the gunn diode member so that the high-frequency signal generator can function as an FM signal generator.

    High-frequency signal generator and radar module
    2.
    发明授权
    High-frequency signal generator and radar module 失效
    高频信号发生器和雷达模块

    公开(公告)号：US5394154A

    公开(公告)日：1995-02-28

    申请号：US120024

    申请日：1993-09-10

    申请人： Hiroshi Uematsu ,  Hiroyuki Ando ,  Tsutomu Yoneyama ,  Nobuyoshi Takeuchi ,  Shigeki Kato

    发明人： Hiroshi Uematsu ,  Hiroyuki Ando ,  Tsutomu Yoneyama ,  Nobuyoshi Takeuchi ,  Shigeki Kato

    IPC分类号： G01S7/03 ,  G01S7/35 ,  G01S13/34 ,  H03B9/14 ,  H03C3/22 ,  H03B7/14

    CPC分类号： H03B9/141 ,  G01S7/032 ,  G01S13/34 ,  G01S7/35 ,  H03B2009/126 ,  H03C3/22

    摘要： A radar module includes a high-frequency signal generator comprising upper and lower parallel conductive plates, at least one dielectric rod held between the parallel conductive plates, a metal diode mount held between the parallel conductive plates, a gunn diode member mounted on a side of the diode mount, and a printed-circuit board mounted on the side of the diode mount in covering relationship to the gunn diode member and having a bias supply circuit on its surface for supplying a bias voltage to the gunn diode member. One terminal of the gunn diode member extends through a through hole defined in the printed-circuit board, is exposed in the vicinity of the surface of the diode mount, and is connected to the bias supply circuit. The printed-circuit board has a rectangular metal pattern dimensionally adjustable for adjusting the oscillation frequency of the gunn diode member, and a varactor diode for modulating the frequency of a signal generated by the gunn diode member so that the high-frequency signal generator can function as an FM signal generator.

    摘要翻译： 雷达模块包括高频信号发生器，其包括上和下平行导电板，保持在平行导电板之间的至少一个介电棒，保持在平行导电板之间的金属二极管座，安装在 二极管安装件和安装在二极管安装件一侧的印刷电路板，与二极管构件的覆盖关系，并在其表面上具有用于向喷枪二极管构件提供偏置电压的偏置电源电路。 喷枪二极管部件的一个端子延伸穿过限定在印刷电路板中的通孔，暴露在二极管安装件的表面附近，并连接到偏置电源电路。 印刷电路板具有尺寸可调的矩形金属图案，用于调节二极管构件的振荡频率，以及变容二极管，用于调制由二极管构件产生的信号的频率，使得高频信号发生器可以起作用 作为FM信号发生器。

    Metal halide lamp
    7.
    发明申请
    Metal halide lamp 审中-公开
    金卤灯

    公开(公告)号：US20060145625A1

    公开(公告)日：2006-07-06

    申请号：US10536704

    申请日：2004-09-06

    申请人： Nobuyoshi Takeuchi ,  Yoshiharu Nishiura

    发明人： Nobuyoshi Takeuchi ,  Yoshiharu Nishiura

    IPC分类号： H01J17/16 ,  H01J61/30 ,  H01J17/20

    CPC分类号： H01J61/827 ,  H01J61/302

    摘要： A metal halide lamp has an arc tube that includes: a pair of electrode structures, each of which has an electrode at a tip; a main tube part made of polycrystalline alumina ceramic, and containing a discharge space in which the electrodes of the electrode structures are located to oppose each other; and a pair of thin tube parts that connect from the main tube part and are sealed by respective sealing members with the electrode structures inserted therein, where 20≦WL≦50, EL/Di≧2.0, and 0.5≦G≦5.0 are satisfied where tube wall loading of the arc tube is WL(W/cm2), a distance between the electrodes is EL(mm), an inner diameter of the main tube part is Di (mm), and a crystal grain diameter of the polycrystalline alumina ceramic is G(μm)

    摘要翻译： 金属卤化物灯具有电弧管，其包括：一对电极结构，每个电极结构具有尖端的电极; 由多晶氧化铝陶瓷制成的主管部分，并且包含其中电极结构的电极彼此相对的放电空间; 以及一对细管部分，其从主管部分连接并且由插入其中的电极结构的相应的密封构件密封，其中20 <= WL <= 50，EL / Di> = 2.0和0.5 <= G < = 5.0，其中电弧管的管壁负载为WL（W / cm 2），电极之间的距离为EL（mm），主管部分的内径为Di mm），多晶氧化铝陶瓷的晶粒直径为G（mum）

    Metal halide lamp with improved lumen value maintenance
    8.
    发明授权
    Metal halide lamp with improved lumen value maintenance 失效
    具有改善流明值维护的金属卤化物灯

    公开(公告)号：US07057350B2

    公开(公告)日：2006-06-06

    申请号：US10839804

    申请日：2004-05-05

    申请人： Stefaan M. Lambrechts ,  Nobuyoshi Takeuchi ,  Jakob Maya

    发明人： Stefaan M. Lambrechts ,  Nobuyoshi Takeuchi ,  Jakob Maya

    IPC分类号： H01J17/20

    CPC分类号： H01J61/827 ,  H01J61/125 ,  H01J61/302

    摘要： An arc discharge metal halide lamp having a discharge chamber having visible light permeable walls bounding a discharge region supported electrodes in a discharge region spaced apart by a distance Le with an average interior diameter equal to D so they have a selected ratio with D exceeding a minimum value. Ionizable materials are provided in this chamber involving a noble gas, one or more halides, and mercury in an amount sufficiently small so as to result in a relatively low maximum voltage drop between the electrodes during lamp operation for a lamp dissipation sufficient to have the chamber wall loading exceed a minimum value or so as to maintain chamber luminosity above a minimum value for a selected operational duration.

    摘要翻译： 一种电弧放电金属卤化物灯，其具有放电室，该放电室具有将平均内径等于D的间隔开距离为L的放电区域中的放电区域支撑的电极限定在其上， D的选择比例超过最小值。 在该室中设置可离子化材料，该惰性气体包含惰性气体，一种或多种卤化物和足够小量的汞，以便在灯操作期间导致电极之间相对较低的最大电压降，足以具有室 壁载荷超过最小值，以便在所选择的操作持续时间内将室内亮度保持在最小值以上。

    Nonvolatile semiconductor device with a verify function
    9.
    发明授权
    Nonvolatile semiconductor device with a verify function 失效
    具有验证功能的非易失性半导体器件

    公开(公告)号：US6005805A

    公开(公告)日：1999-12-21

    申请号：US731555

    申请日：1996-10-16

    申请人： Nobuyoshi Takeuchi

    发明人： Nobuyoshi Takeuchi

    IPC分类号： G11C16/34 ,  G11C16/06

    CPC分类号： G11C16/3445 ,  G11C16/3436 ,  G11C16/3459

    摘要： In a nonvolatile semiconductor memory device, flash memory cells are arranged in rows and columns and the individual memory cells 2nk are connected to word lines WLi and bit lines BLi. Further connected to the individual word lines WLi are verify cells 4n that are verified in place of the memory cells 2nk during the verification of the memory cells 2nk. The memory cells 2nk and verify cells 4n are formed into almost the same EEPROM structure having a floating electrode, except that the gate couple ratio of the verify cells 4n are set smaller than that of the gate couple ratio of the memory cells 2nk. Therefore, as long as electrons are injected sufficiently into these two types of cells, the threshold values of the verify cells 4n are always smaller than those of the memory cells 2nk. Consequently, when it is confirmed that the verify cells 4n have been verified, this means that the memory cells have been verified as well.

    摘要翻译： 在非易失性半导体存储器件中，闪存单元以行和列排列，并且各个存储单元2nk连接到字线WLi和位线BLi。 在存储单元2nk的验证期间，进一步连接到各个字线WLi是验证代替存储器单元2nk的单元4n。 存储单元2nk和验证单元4n形成为具有浮置电极的几乎相同的EEPROM结构，除了验证单元4n的栅极耦合比被设置为小于存储单元2nk的栅极耦合比的栅极耦合比。 因此，只要将电子充分地注入到这两种类型的单元中，则验证单元4n的阈值总是小于存储单元2nk的阈值。 因此，当确认验证单元4n已经被验证时，这意味着也已经验证了存储单元。

    Method of forming diffusion layer and method of manufacturing nonvolatile semiconductor memory device
    10.
    发明授权
    Method of forming diffusion layer and method of manufacturing nonvolatile semiconductor memory device 失效
    形成扩散层的方法和制造非易失性半导体存储器件的方法

    公开(公告)号：US5641696A

    公开(公告)日：1997-06-24

    申请号：US519812

    申请日：1995-08-25

    申请人： Nobuyoshi Takeuchi

    发明人： Nobuyoshi Takeuchi

    IPC分类号： H01L21/8247

    CPC分类号： H01L27/11521

    摘要： The first impurity species having a low diffusion rate is heavily doped in a predetermined region of a semiconductor substrate in contact with portions corresponding to the edges of a floating gate, and the second impurity species having a low diffusion rate is lightly doped in the predetermined region from a position separated from the portions corresponding to the edges of the floating gate by a predetermined distance. Annealing is performed such that the second impurity species is diffused below the floating gate more inward than the first impurity species, and part of a diffusion region formed by the first impurity species serves as a tunnel region which overlaps the floating gate. With this structure, a short channel effect can be prevented, and an inter-band current can be suppressed.

    摘要翻译： 具有低扩散速率的第一杂质物质在半导体衬底的与浮栅的边缘相对应的部分的预定区域中被重掺杂，并且具有低扩散速率的第二杂质物质在预定区域中被轻掺杂 从与浮动栅极的边缘相对应的部分分离预定距离的位置。 执行退火，使得第二杂质种类比第一杂质物质更向内扩散到浮置栅极之下，并且由第一杂质物质形成的扩散区域的一部分用作与浮置栅极重叠的隧道区域。 利用这种结构，可以防止短通道效应，并且可以抑制带间电流。