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13 条记录 (耗时 0.025 秒)

    Method of forming a multilayer thin film
    1.
    发明授权
    Method of forming a multilayer thin film 失效
    形成多层薄膜的方法

    公开(公告)号：US4462881A

    公开(公告)日：1984-07-31

    申请号：US322697

    申请日：1981-11-18

    申请人： Hiroshi Yamamoto ,  Noboru Shimizu ,  Masahide Suenaga ,  Yukihisa Tsukada ,  Tooru Takeura

    发明人： Hiroshi Yamamoto ,  Noboru Shimizu ,  Masahide Suenaga ,  Yukihisa Tsukada ,  Tooru Takeura

    IPC分类号： G11B5/31 ,  G11B5/39 ,  H01F41/34 ,  C23C15/00

    CPC分类号： G11B5/3903 ,  H01F41/34

    摘要： A method of forming a multilayer thin film is disclosed in which a second thin conductive film is deposited on a first thin conductive film uninterruptedly after the first thin film has been deposited on a substrate, the first and second films thus formed are processed so as to form a predetermined pattern, the surface of the second thin film is cleaned by ion etching and a third thin conductive film is deposited on the whole surface of the substrate, and then the second and third thin films are processed so as to have a pattern different from the above-mentioned predetermined pattern. In the case where two thin conductive films different in material and pattern from each other are piled on a substrate, the above method can form a perfect interconnection between the two films and can make very small the contact resistance between the two films. Accordingly, the method is fit to form, for example, a barber pole type magnetoresistive element.

    摘要翻译： 公开了一种形成多层薄膜的方法，其中在第一薄膜沉积在基底上之后，第二薄导电膜不间断地沉积在第一薄导电膜上，这样形成的第一和第二薄膜被加工成 形成预定图案，通过离子蚀刻来清洁第二薄膜的表面，并且在基板的整个表面上沉积第三薄导电膜，然后处理第二和第三薄膜以具有不同的图案 从上述预定图案。 在材料和图案彼此不同的两个薄导电膜堆叠在基板上的情况下，上述方法可以形成两个膜之间的完美互连，并且可以使两个膜之间的接触电阻非常小。 因此，该方法适合于形成例如理发杆型磁阻元件。

    Magnetic head closure having ferrite substrate and closure and conductive thin film coil deposited in recess of substantially same shape in ferrite substrate
    2.
    发明授权
    Magnetic head closure having ferrite substrate and closure and conductive thin film coil deposited in recess of substantially same shape in ferrite substrate 失效
    具有铁氧体衬底的磁头封盖和在铁氧体衬底中沉积在基本相同形状的凹陷中的闭合和导电薄膜线圈

    公开(公告)号：US4860140A

    公开(公告)日：1989-08-22

    申请号：US183338

    申请日：1988-04-07

    申请人： Kazuhiro Momata ,  Kousaku Chida ,  Tooru Takeura ,  Yukihisa Tsukada

    发明人： Kazuhiro Momata ,  Kousaku Chida ,  Tooru Takeura ,  Yukihisa Tsukada

    IPC分类号： G11B5/133 ,  G11B5/17 ,  G11B5/187 ,  G11B5/193

    CPC分类号： G11B5/193 ,  G11B5/1335 ,  G11B5/17 ,  G11B5/1871

    摘要： The magnetic head according to the present invention has a ferrite substrate and closure. The ferrite substrate has formed therein a first recess in which a conductive coil is to be deposited, while the ferrite closure has formed therein a second recess enclosing a portion of the conductive coil that is contributed to at least signal transducing. The end of the second recess is disposed in a position related with the depth of the tranducing gap. Since the first recess in which the conductive coil is deposited has no influence on the magnetic transducing efficiency, it can be much freely formed by photolithography or reactive ion etching. Also since the second recess having an influence on the magnetic transducing efficiency can be formed by precision machining, no advanced process control is needed.

    摘要翻译： 根据本发明的磁头具有铁氧体衬底和封闭件。 铁氧体衬底在其中形成有要沉积导电线圈的第一凹部，而铁氧体封闭件在其中形成有封闭导电线圈的至少有助于至少信号传导的部分的第二凹部。 第二凹部的端部设置在与调节间隙的深度相关的位置。 由于其中沉积导电线圈的第一凹槽对磁转换效率没有影响，所以可以通过光刻或反应离子蚀刻来自由地形成。 此外，由于可以通过精密加工形成对磁转换效率有影响的第二凹部，因此不需要先进的工艺控制。

    Soft-film-bias type magnetoresitive device
    3.
    发明授权
    Soft-film-bias type magnetoresitive device 失效
    软膜偏置型磁阻器件

    公开(公告)号：US4814919A

    公开(公告)日：1989-03-21

    申请号：US124623

    申请日：1987-11-24

    申请人： Masahiro Kitada ,  Hideo Tanabe ,  Noboru Shimizu ,  Yoshihisa Kamo ,  Hitoshi Nakamura ,  Tooru Takeura

    发明人： Masahiro Kitada ,  Hideo Tanabe ,  Noboru Shimizu ,  Yoshihisa Kamo ,  Hitoshi Nakamura ,  Tooru Takeura

    IPC分类号： G11B5/39 ,  H01L43/08 ,  G11B5/127

    CPC分类号： G11B5/3912 ,  G11B5/3903 ,  H01L43/08 ,  G11B5/3932

    摘要： A soft-film-bias type magnetoresistive device is disclosed in which a high-permeability magnetic film, an insulating film and a permalloy film are formed on a substrate in this order, and first, second and third electrodes, which are parallel to each other, are provided on the permalloy film, to form a differential type magnetoresistive device. In this magnetoresistive device, a bias magnetic field which is generated and applied to the permalloy film between the first and second electrodes, is opposite in direction to a bias magnetic field which is generated and applied to the permalloy film between the second and third electrodes.

    摘要翻译： 公开了一种软膜偏置型磁阻器件，其中在基板上依次形成高磁导率磁性膜，绝缘膜和坡莫合金膜，并且彼此平行的第一，第二和第三电极 ，设置在坡莫合金膜上，形成差动型磁阻器件。 在该磁阻器件中，产生并施加到第一和第二电极之间的坡莫合金膜上的偏置磁场在与产生并施加到第二和第三电极之间的坡莫合金膜上的偏置磁场方向相反。

    Method of fabricating magnetoresistive effect type magnetic head capable of preventing electrostatic damage
    6.
    发明授权
    Method of fabricating magnetoresistive effect type magnetic head capable of preventing electrostatic damage 失效
    制造能够防止静电损伤的磁阻效应型磁头的方法

    公开(公告)号：US5805390A

    公开(公告)日：1998-09-08

    申请号：US718127

    申请日：1996-09-18

    申请人： Tooru Takeura

    发明人： Tooru Takeura

    IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/40 ,  G11B5/60 ,  H01L21/28

    CPC分类号： G11B5/3906 ,  G11B5/3103 ,  G11B5/3967 ,  G11B5/40 ,  G11B5/6005 ,  G11B5/3163 ,  Y10T29/49044 ,  Y10T29/49048

    摘要： A novel magtnetoresistive head unit includes an upper shield film and a lower shield film electrically connected to electrodes connected with an external source which are shorted by a shorting circuit without the intermediary of an MR element. The current due to static electricity generated in the process of element formation is made to flow through the shorting circuit thereby to prevent the electrostatic breakdown of the MR element and the dielectric breakdown between the MR element and the shield films. After cutting out a slider from the substrate, the upper and lower shield films are shorted by the shorting circuit, thereby preventing the electrostatic breakdown of the magnetoresistive element and the dielectric breakdown between the magnetoresistive element and the shield films during the assembly and transportation. The electrostatic breakdown is also prevented in the processes from the formation of the magnetoresistive (MR) element to the mounting of the MR element on the apparatus, thereby making it possible to fabricate an MR head and a write-read separated magnetic head with a high yield.

    摘要翻译： 一种新颖的磁阻电阻头单元包括上电屏蔽膜和下屏蔽膜，电屏蔽膜电连接到与外部源连接的电极，短路电路不伴随MR元件的中介。 由于在元件形成过程中产生的静电导致的电流流过短路，从而防止MR元件的静电击穿和MR元件与屏蔽膜之间的电介质击穿。 在从基板切出滑块之后，上下屏蔽薄膜通过短路电路短路，从而防止了在组装和运输期间磁阻元件的静电破坏和磁阻元件与屏蔽膜之间的电介质击穿。 在从形成磁阻（MR）元件到装置上的MR元件的安装的过程中也可以防止静电击穿，从而可以制造具有高的MR磁头和写入读取的分离磁头 产量。

    Magnetoresistive head structure that prevents under film from undesirable etching
    7.
    发明授权
    Magnetoresistive head structure that prevents under film from undesirable etching 失效
    防止膜下不希望腐蚀的磁阻头结构

    公开(公告)号：US5371643A

    公开(公告)日：1994-12-06

    申请号：US927955

    申请日：1992-08-11

    申请人： Isamu Yuito ,  Makoto Morijiri ,  Tooru Takeura ,  Katsunori Ohwada ,  Masahiro Kitada

    发明人： Isamu Yuito ,  Makoto Morijiri ,  Tooru Takeura ,  Katsunori Ohwada ,  Masahiro Kitada

    IPC分类号： G11B5/39 ,  G11B5/33

    CPC分类号： G11B5/3903 ,  Y10T29/49052

    摘要： A magnetoresistive head is fabricated with a high yield rate by preventing the electrode film from breaking down. An upper shield film is formed with an electrode separation layer and an upper gap film disposed between it and the electrode film. The electrode film is prevented from being etched when the upper shield film is subjected to ion milling as a result. Further, the upper gap film is laid on top of the electrode separation layer, and a lead is satisfactorily protected and prevented from being exposed. Thus, the upper shield film and the lead are prevented from becoming short-circuited as a result of the disconnection of the electrode film and the exposure of the lead.

    摘要翻译： 通过防止电极膜破裂，以高产率制造磁阻头。 上部屏蔽膜形成有电极分离层和设置在其与电极膜之间的上间隙膜。 因此，当上屏蔽膜经受离子铣削时，防止电极膜被蚀刻。 此外，上间隙膜被放置在电极分离层的顶部，并且引线被令人满意地保护并防止暴露。 因此，由于电极膜的断开和引线的暴露，防止了上屏蔽膜和引线的短路。

    Magnetic transducer using magnetoresistance effect
    10.
    发明授权
    Magnetic transducer using magnetoresistance effect 失效
    磁传感器采用磁阻效应

    公开(公告)号：US4663684A

    公开(公告)日：1987-05-05

    申请号：US694764

    申请日：1985-01-25

    申请人： Yoshihisa Kamo ,  Naoki Sato ,  Masahiro Kitada ,  Tooru Takeura

    发明人： Yoshihisa Kamo ,  Naoki Sato ,  Masahiro Kitada ,  Tooru Takeura

    IPC分类号： G01R33/09 ,  G11B5/39 ,  G11B5/30

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/399

    摘要： Disclosed is a magnetic transducer using a magnetoresistance effect, comprising a magnetoresistive film, a hard magnetic film for applying a transverse biasing magnetic field thereto, and a conductive film through which current for applying the transverse biasing magnetic field to the magnetoresistive film flows. The conductive film may be either in electrical contact with or in electrical insulation from the magnetoresistive film. In this magnetic transducer, even when the heights of the respective constituents have changed, the transverse biasing magnetic field to be applied does not change considerably, and an optimum bias field strength is readily attained.

    摘要翻译： 公开了一种使用磁阻效应的磁传感器，包括磁阻膜，用于向其施加横向偏置磁场的硬磁膜，以及用于向磁阻膜施加横向偏置磁场的电流的导电膜。 导电膜可以与磁阻膜电接触或者与电绝缘。 在这种磁换能器中，即使各构成部件的高度发生变化，所施加的横向偏置磁场也不会发生显着变化，容易获得最佳的偏置磁场强度。