公开(公告)号：US20110081780A1

公开(公告)日：2011-04-07

申请号：US12918013

申请日：2009-02-13

申请人： Hirotaka Shida ,  Takafumi Shimizu ,  Masatoshi Ikeda ,  Shou Kubouchi ,  Yousuke Shibata ,  Michiaki Andou ,  Kazuhito Uchikura ,  Akihiro Takemura

发明人： Hirotaka Shida ,  Takafumi Shimizu ,  Masatoshi Ikeda ,  Shou Kubouchi ,  Yousuke Shibata ,  Michiaki Andou ,  Kazuhito Uchikura ,  Akihiro Takemura

IPC分类号： H01L21/306 ,  C09K13/00

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463

摘要： A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B1) an organic acid, the number of silanol groups included in the silica particles (A) calculated from a signal area of a 29Si-NMR spectrum being 2.0 to 3.0×1021/g.

摘要翻译： 化学机械研磨用水系分散体包含（A）二氧化硅粒子和（B1）有机酸，由二氧化硅粒子（A）中包含的硅烷醇基的数量由29Si-NMR谱的信号面积计算为2.0〜3.0× 1021 / g。

公开(公告)号：US20080045016A1

公开(公告)日：2008-02-21

申请号：US11833534

申请日：2007-08-03

申请人： Michiaki Andou ,  Tomohisa Konno ,  Hirotaka Shida ,  Kazuhito Uchikura ,  Nobuyuki Kurashima ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Michiaki Andou ,  Tomohisa Konno ,  Hirotaka Shida ,  Kazuhito Uchikura ,  Nobuyuki Kurashima ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： H01L21/461 ,  C11D3/37

CPC分类号： C11D11/0047 ,  C11D3/37 ,  C11D17/06 ,  H01L21/02074

摘要： A cleaning composition can decontaminate a surface of a chemically mechanically polished semiconductor substrate having a metal wiring and a low dielectric constant film and can highly remove impurities such as residual abrasive grains, residual polishing waste, and metal ions on the metal wiring and low dielectric constant film without corroding the metal wiring, degrading electric characteristics of the low dielectric constant film, and causing mechanical damage to the low dielectric constant film. A cleaning method of a semiconductor substrate uses the cleaning composition, and a manufacturing method of a semiconductor substrate includes a step of performing the cleaning method.The cleaning composition is used for a chemically mechanically polished surface, and includes organic polymer particles (A) having a crosslinked structure and an average dispersed particle diameter of 10 nm or more and less than 100 nm, and a complexing agent (B).

摘要翻译： 清洁组合物可以对具有金属布线和低介电常数膜的化学机械抛光的半导体衬底的表面进行去污染，并且可以高度去除金属布线上的残留磨粒，残留抛光废料和金属离子等杂质和低介电常数 膜不会腐蚀金属布线，降低低介电常数膜的电特性，并对低介电常数膜造成机械损伤。 半导体衬底的清洁方法使用清洁组合物，并且半导体衬底的制造方法包括执行清洁方法的步骤。 清洁组合物用于化学机械抛光的表面，并且包括具有交联结构和平均分散粒径为10nm以上且小于100nm的有机聚合物粒子（A）和络合剂（B）。

公开(公告)号：US08349207B2

公开(公告)日：2013-01-08

申请号：US12529545

申请日：2008-02-20

申请人： Taichi Matsumoto ,  Tomikazu Ueno ,  Michiaki Andou

发明人： Taichi Matsumoto ,  Tomikazu Ueno ,  Michiaki Andou

IPC分类号： C09K13/06

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463

摘要： A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M− represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.

摘要翻译： 化学机械研磨用水系分散体包含（A）由BET法测定的比表面积为10〜60nm计算出的平均粒径的胶体二氧化硅，（B）具有2个以上羧基的有机酸和1个以上 一个分子中的羟基，（C）由以下通式（1）表示的季铵化合物，其中R 1至R 4各自表示烃基，M-表示阴离子，化学机械研磨水分散体的pH为 3〜5。

公开(公告)号：US20100099260A1

公开(公告)日：2010-04-22

申请号：US12529545

申请日：2008-02-20

申请人： Taichi Matsumoto ,  Tomikazu Ueno ,  Michiaki Andou

发明人： Taichi Matsumoto ,  Tomikazu Ueno ,  Michiaki Andou

IPC分类号： H01L21/302 ,  C09K13/00

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463

摘要： A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M− represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.

摘要翻译： 化学机械研磨用水系分散体包含（A）由BET法测定的比表面积为10〜60nm计算出的平均粒径的胶体二氧化硅，（B）具有2个以上羧基的有机酸和1个以上 一个分子中的羟基，（C）由以下通式（1）表示的季铵化合物，其中R 1至R 4各自表示烃基，M-表示阴离子，化学机械研磨水分散体的pH为 3〜5。

公开(公告)号：US20090325383A1

公开(公告)日：2009-12-31

申请号：US12374074

申请日：2008-02-20

申请人： Michiaki Andou ,  Tomohisa Konno

发明人： Michiaki Andou ,  Tomohisa Konno

IPC分类号： H01L21/306 ,  C09K13/04

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31053

摘要： A chemical mechanical polishing aqueous dispersion according to the invention includes (A) 0.1 to 4 mass % of colloidal silica having an average particle diameter of 10 to 100 nm, and (B) 0.1 to 3 mass % of at least one ammonium salt selected from ammonium phosphate, diammonium phosphate, and ammonium hydrogen sulfate, the chemical mechanical polishing aqueous dispersion having a mass ratio (A)/(B) of the component (A) to the component (B) of 1 to 3 and a pH of 4 to 5 and being able to simultaneously polish at least two films that form a polishing target surface and are selected from a polysilicon film, a silicon nitride film, and a silicon oxide film.

摘要翻译： 本发明的化学机械研磨用水系分散体包含（A）0.1〜4质量％的平均粒径为10〜100nm的胶态二氧化硅，（B）0.1〜3质量％的选自 磷酸铵，磷酸氢二铵和硫酸氢铵，组分（A）与组分（B）的质量比（A）/（B）为1至3，化学机械抛光水分散体的pH为4至 并且能够同时抛光形成抛光对象表面的至少两个膜，并且选自多晶硅膜，氮化硅膜和氧化硅膜。