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1.发明申请AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD 审中-公开化学机械抛光和化学机械抛光方法的水分散公开(公告)号：US20110081780A1
公开(公告)日：2011-04-07
申请号：US12918013
申请日：2009-02-13
申请人： Hirotaka Shida , Takafumi Shimizu , Masatoshi Ikeda , Shou Kubouchi , Yousuke Shibata , Michiaki Andou , Kazuhito Uchikura , Akihiro Takemura
发明人： Hirotaka Shida , Takafumi Shimizu , Masatoshi Ikeda , Shou Kubouchi , Yousuke Shibata , Michiaki Andou , Kazuhito Uchikura , Akihiro Takemura
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B1) an organic acid, the number of silanol groups included in the silica particles (A) calculated from a signal area of a 29Si-NMR spectrum being 2.0 to 3.0×1021/g.
摘要翻译： 化学机械研磨用水系分散体包含（A）二氧化硅粒子和（B1）有机酸，由二氧化硅粒子（A）中包含的硅烷醇基的数量由29Si-NMR谱的信号面积计算为2.0〜3.0× 1021 / g。
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2.发明申请公开(公告)号：US20110053462A1
公开(公告)日：2011-03-03
申请号：US12866571
申请日：2009-01-16
申请人： Hirotaka Shida , Takafumi Shimizu , Masatoshi Ikeda , Shou Kubouchi , Yousuke Shibata , Kazuhito Uchikura , Akihiro Takemura
发明人： Hirotaka Shida , Takafumi Shimizu , Masatoshi Ikeda , Shou Kubouchi , Yousuke Shibata , Kazuhito Uchikura , Akihiro Takemura
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409 , C09K3/1436 , C09K3/1463 , H01L21/31053
摘要： A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica particles (A) determined by ICP atomic emission spectrometry, ICP mass spectrometry, or ammonium ion quantitative analysis using ion chromatography having a relationship in which the sodium content is 5 to 500 ppm and at least one of the potassium content and the ammonium ion content is 100 to 20,000 ppm.
摘要翻译： 包含（A）二氧化硅颗粒和（B1）有机酸的化学机械研磨水分散体，通过ICP原子发射光谱法测定的二氧化硅颗粒（A）的钠含量，钾含量和铵离子含量，ICP质量 使用具有钠含量为5〜500ppm，钾含量和铵离子含量中的至少一种为100〜20000ppm的关系的离子色谱法进行光谱测定或铵离子定量分析。
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3.发明授权Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method 有权化学机械抛光和化学机械抛光方法的水分散体公开(公告)号：US08506359B2
公开(公告)日：2013-08-13
申请号：US12866571
申请日：2009-01-16
申请人： Hirotaka Shida , Takafumi Shimizu , Masatoshi Ikeda , Shou Kubouchi , Yousuke Shibata , Kazuhito Uchikura , Akihiro Takemura
发明人： Hirotaka Shida , Takafumi Shimizu , Masatoshi Ikeda , Shou Kubouchi , Yousuke Shibata , Kazuhito Uchikura , Akihiro Takemura
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409 , C09K3/1436 , C09K3/1463 , H01L21/31053
摘要： A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica particles (A) determined by ICP atomic emission spectrometry, ICP mass spectrometry, or ammonium ion quantitative analysis using ion chromatography having a relationship in which the sodium content is 5 to 500 ppm and at least one of the potassium content and the ammonium ion content is 100 to 20,000 ppm.
摘要翻译： 包含（A）二氧化硅颗粒和（B1）有机酸的化学机械研磨水分散体，通过ICP原子发射光谱法测定的二氧化硅颗粒（A）的钠含量，钾含量和铵离子含量，ICP质量 使用具有钠含量为5〜500ppm，钾含量和铵离子含量中的至少一种为100〜20000ppm的关系的离子色谱法进行光谱法或铵离子定量分析。
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4.发明申请AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, CHEMICAL MECHANICAL POLISHING METHOD, AND KIT FOR PREPARING AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING 审中-公开化学机械抛光水化学分散体，化学机械抛光方法，以及化学机械抛光水溶液的制备工具公开(公告)号：US20090302266A1
公开(公告)日：2009-12-10
申请号：US12295872
申请日：2007-03-27
IPC分类号： C09K13/00
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/7684
摘要： A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) an organic acid, (C) a water-soluble polymer, (D) an oxidizing agent, and (E) water, the water-soluble polymer (C) having a weight average molecular weight of 50,000 to 5,000,000.
摘要翻译： 化学机械研磨水分散体包含（A）磨粒，（B）有机酸，（C）水溶性聚合物，（D）氧化剂和（E）水，水溶性聚合物（C） 重均分子量为50,000〜5,000,000。
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5.发明申请Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion, chemical mechanical polishing process, and process for producing semiconductor devices 审中-公开用于化学机械抛光的水分散体，用于制备水性分散体的试剂盒，化学机械抛光工艺以及用于制备半导体器件的方法公开(公告)号：US20070049180A1
公开(公告)日：2007-03-01
申请号：US11508893
申请日：2006-08-24
申请人： Hirotaka Shida , Akihiro Takemura , Masayuki Hattori , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Hirotaka Shida , Akihiro Takemura , Masayuki Hattori , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： B24B7/30
CPC分类号： C09G1/02 , B24B37/044 , H01L21/3212 , H01L21/76835 , H01L21/7684
摘要： An aqueous dispersion for chemical mechanical polishing contains water, a polyvinylpyrrolidone having a weight-average molecular weight exceeding 200,000, an oxidant, a protective film-forming agent and abrasive grains, the protective film-forming agent containing a first metal compound-forming agent which forms a water-insoluble metal compound, and a second metal compound-forming agent which forms a water-soluble metal compound. The aqueous dispersion is capable of uniformly and stably polishing a metal film at low friction without causing defects in a metal film and an insulating film.
摘要翻译： 用于化学机械抛光的水性分散体含有水，重均分子量超过200,000的聚乙烯吡咯烷酮，氧化剂，保护性成膜剂和磨料颗粒，所述保护性成膜剂含有第一金属化合物形成剂，所述第一金属化合物形成剂 形成水不溶性金属化合物和形成水溶性金属化合物的第二金属化合物形成剂。 水分散体能够以低摩擦力均匀且稳定地抛光金属膜，而不会在金属膜和绝缘膜中产生缺陷。
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6.发明申请AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND METHOD FOR PREPARING THE SAME, KIT FOR PREPARING AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE 审中-公开用于化学机械抛光的水性分散体及其制备方法，用于制备用于化学机械抛光的水性分散体的试剂盒和用于半导体器件的化学机械抛光方法公开(公告)号：US20100221918A1
公开(公告)日：2010-09-02
申请号：US12676272
申请日：2008-08-12
IPC分类号： H01L21/304 , H01L21/306 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing aqueous dispersion includes (A) a sulfonic acid group-containing water-soluble polymer, (B) an amino acid, (C) abrasive grains, and (D) an oxidizing agent.
摘要翻译： 化学机械研磨用水系分散体包含（A）含有磺酸基的水溶性聚合物，（B）氨基酸，（C）磨粒，（D）氧化剂。
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7.发明授权Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权化学机械抛光水性分散体和化学机械抛光方法公开(公告)号：US08492276B2
公开(公告)日：2013-07-23
申请号：US12537766
申请日：2009-08-07
申请人： Taichi Abe , Hirotaka Shida , Akihiro Takemura , Mitsuru Meno , Shinichi Hirasawa , Kenji Iwade , Takeshi Nishioka
发明人： Taichi Abe , Hirotaka Shida , Akihiro Takemura , Mitsuru Meno , Shinichi Hirasawa , Kenji Iwade , Takeshi Nishioka
IPC分类号： H01L21/3212
CPC分类号： C09K13/06 , C09K3/1463 , H01L21/3212 , H01L21/7684
摘要： A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MB) (mass %) of the iron (III) compound (B) satisfy the relationship “MA/MB=0.004 to 0.1”. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.
摘要翻译： 使用化学机械抛光水性分散体来抛光包括含有钨的互连层的抛光对象。 化学机械抛光水分散体包括：（A）阳离子水溶性聚合物; （B）铁（III）化合物; 和（C）胶体二氧化硅颗粒。 阳离子水溶性聚合物（A）的含量（质量％）（质量％）和铁（III）化合物（B）的含量（MB）（质量％）满足关系式“MA / MB = 0.004〜0.1 “。 化学机械抛光水性分散体的pH为1〜3。
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8.发明申请公开(公告)号：US20100252774A1
公开(公告)日：2010-10-07
申请号：US12749934
申请日：2010-03-30
申请人： Hirotaka SHIDA , Akihiro Takemura , Taichi Abe
发明人： Hirotaka SHIDA , Akihiro Takemura , Taichi Abe
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09K3/1409
摘要： A chemical mechanical polishing aqueous dispersion that is used to polish a polishing target that includes a wiring layer that contains tungsten, the chemical mechanical polishing aqueous dispersion including: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica having an average particle diameter calculated from a specific surface area determined by the BET method of 10 to 60 nm, the content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MC) (mass %) of the colloidal silica (C) satisfying the relationship “MA/MC=0.0001 to 0.003”, and the chemical mechanical polishing aqueous dispersion having a pH of 1 to 3.
摘要翻译： 一种化学机械抛光水性分散体，其用于抛光包括含有钨的布线层的抛光对象，所述化学机械抛光水分散体包括：（A）阳离子水溶性聚合物; （B）铁（III）化合物; 和（C）由BET法测定的比表面积为10〜60nm，阳离子型水溶性聚合物（A）的含量（质量％）（质量％）和含量 （C）的胶体二氧化硅（C）的质量％（MC）（质量％），pH为1〜3的化学机械研磨用水系分散体。
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9.发明申请AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE 有权用于半导体器件的化学机械抛光和化学机械抛光方法的水溶液分散体公开(公告)号：US20090221213A1
公开(公告)日：2009-09-03
申请号：US12297949
申请日：2007-09-27
CPC分类号： H01L21/30625 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.
摘要翻译： 本发明的化学机械研磨用水系分散体包含（A）重均分子量为500,000〜2000000的第一水溶性聚合物，其分子中含有杂环，（B）第二水溶性聚合物或其盐 重均分子量为1000〜10000，包括选自羧基和磺酸基的一个基团，（C）氧化剂和（D）磨粒，pH为7〜12。
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10.发明授权Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method for semiconductor device 有权化学机械抛光水性分散体和半导体器件的化学机械抛光方法公开(公告)号：US08574330B2
公开(公告)日：2013-11-05
申请号：US12297949
申请日：2007-09-27
CPC分类号： H01L21/30625 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12.
摘要翻译： 本发明的化学机械研磨用水系分散体包含（A）重均分子量为500,000〜2000000的第一水溶性聚合物，其分子中含有杂环，（B）第二水溶性聚合物或其盐 重均分子量为1000〜10000，包括选自羧基和磺酸基的一个基团，（C）氧化剂和（D）磨粒，pH为7〜12。
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