CLUTCH
    1.
    发明申请
    CLUTCH 有权
    离合器

    公开(公告)号:US20150247535A1

    公开(公告)日:2015-09-03

    申请号:US14428550

    申请日:2013-09-25

    摘要: A clutch is provided with a drive-side rotational body and a driven-side rotational body, which can move in the axial direction between a coupled position and a decoupled position. The driven-side rotational body has a groove having a helical portion and an annular portion that is deeper than the helical portion. The driven-side rotational body is urged toward the coupled position by an urging member. The driven-side rotational body is moved to the decoupled position against the urging force of the urging member by insertion of a pin into the helical portion. A projection is provided on the tip of the pin, and a recessed groove for accommodating the projection when the pin is inserted into the helical portion is provided in the bottom surface of the helical portion.

    摘要翻译: 离合器设置有驱动侧旋转体和从动侧旋转体,其可以在联接位置和解耦位置之间沿轴向移动。 从动侧旋转体具有一个具有螺旋部分和比螺旋部分更深的环形部分的凹槽。 从动侧旋转体通过施力部件向联接位置推压。 通过将销插入螺旋部分中,被驱动侧旋转体抵抗推动构件的作用力而移动到解耦位置。 在销的顶端设置有突起,在螺旋部的底面设置有用于在销插入螺旋部时容纳突起的凹槽。

    CLUTCH
    3.
    发明申请
    CLUTCH 审中-公开
    离合器

    公开(公告)号:US20150252857A1

    公开(公告)日:2015-09-10

    申请号:US14429666

    申请日:2013-09-25

    摘要: The clutch is provided with a drive-side rotational body, a driven-side rotational body, driven-side rotational body, and an urging member. The driven-side rotational body is movable in the axial direction of the drive-side rotational body between a first position, at which the driven-side rotational body is coupled to the drive-side rotational body, and a second position, at which the driven-side rotational body is decoupled from the drive-side rotational body. The urging member urges the driven-side rotational body from the second position toward the first position. The driven-side rotational body includes a helical groove that extends in the urging direction of the urging member. The clutch is further provided with a pin that can be inserted into the helical groove.

    摘要翻译: 离合器设置有驱动侧旋转体,从动侧旋转体,从动侧旋转体和推压部件。 从动侧旋转体可以在驱动侧旋转体的轴向在从动侧旋转体与驱动侧旋转体接合的第一位置与第二位置之间移动,在该第二位置, 从动侧转动体与驱动侧旋转体脱离。 推动构件将从动侧旋转体从第二位置向第一位置推压。 从动侧旋转体包括在施力部件的推压方向上延伸的螺旋槽。 离合器还设置有可以插入到螺旋槽中的销。

    CLUTCH
    4.
    发明申请
    CLUTCH 审中-公开
    离合器

    公开(公告)号:US20150247536A1

    公开(公告)日:2015-09-03

    申请号:US14428853

    申请日:2013-09-25

    摘要: A clutch is provided with a drive-side rotational body and a driven-side rotational body, which is movable in the axial direction of the drive-side rotational body between a coupled position. The driven-side rotational body has a groove having a helical portion and an annular portion. The clutch also includes an urging member and a pin that is selectively inserted into and retracted from the groove. The clutch moves the driven-side rotational body to the decoupled position against the urging force of the urging member by inserting the pin in the helical portion. The clutch further includes a restricting portion that restricts shifting of the position of the pin from the annular portion to the helical portion when the pin is positioned in the annular portion.

    摘要翻译: 离合器设置有驱动侧旋转体和从动侧旋转体,该驱动侧旋转体和从动侧旋转体可在驱动侧旋转体的轴向方向上在联接位置之间移动。 从动侧旋转体具有具有螺旋部和环状部的槽。 离合器还包括推动构件和选择性地插入到凹槽中并从凹槽缩回的销。 通过将销插入螺旋部分中,离合器克服推动构件的作用力将从动侧旋转体移动到解耦位置。 离合器还包括限制部分,当限制销定位在环形部分中时,限制部分将销的位置从环形部分移动到螺旋部分。

    Method of manufacturing a ferroelectric capacitor with a hydrogen barrier layer
    5.
    发明授权
    Method of manufacturing a ferroelectric capacitor with a hydrogen barrier layer 失效
    制造具有氢阻挡层的铁电电容器的方法

    公开(公告)号:US07662724B2

    公开(公告)日:2010-02-16

    申请号:US11456371

    申请日:2006-07-10

    IPC分类号: H01L21/302

    CPC分类号: H01L28/57 H01L27/11507

    摘要: A method for manufacturing a capacitor includes the steps of: forming a lower electrode above a base substrate; forming a dielectric film composed of ferroelectric material or piezoelectric material above the lower electrode; forming an upper electrode above the dielectric film; forming a silicon oxide film that covers at least the dielectric film and the upper electrode; and forming a hydrogen barrier film that covers the silicon oxide film.

    摘要翻译: 制造电容器的方法包括以下步骤:在基底基板上形成下电极; 在下电极上形成由铁电材料或压电材料构成的电介质膜; 在电介质膜上形成上电极; 形成至少覆盖所述电介质膜和所述上部电极的氧化硅膜; 以及形成覆盖氧化硅膜的氢阻挡膜。

    Piezoelectric element, piezoelectric actuator, liquid ejecting head, and liquid ejecting apparatus
    7.
    发明授权
    Piezoelectric element, piezoelectric actuator, liquid ejecting head, and liquid ejecting apparatus 有权
    压电元件,压电致动器,液体喷射头和液体喷射装置

    公开(公告)号:US08585184B2

    公开(公告)日:2013-11-19

    申请号:US13225107

    申请日:2011-09-02

    申请人: Masao Nakayama

    发明人: Masao Nakayama

    IPC分类号: B41J2/045

    摘要: A piezoelectric element according to an embodiment of the invention includes a first electrode containing a noble metal, a first multilayer composite disposed on the first electrode, a second multilayer composite disposed on the first electrode with a distance from the first multilayer composite, an oxide film partly disposed on the surface of the first electrode between the first multilayer composite and the second multilayer composite, and a covering layer. The covering layer covers the side surfaces of the first and second multilayer composites, and the oxide film and the surface of the first electrode between the first multilayer composite and the second multilayer composite. The first multilayer composite and the second multilayer composite each include a piezoelectric layer, and a second electrode over the piezoelectric layer.

    摘要翻译: 根据本发明实施例的压电元件包括​​含有贵金属的第一电极,设置在第一电极上的第一多层复合材料,与第一多层复合材料相距一定距离的第一电极上设置的第二多层复合物,氧化膜 部分地设置在第一多层复合材料和第二多层复合材料之间的第一电极的表面上,以及覆盖层。 覆盖层覆盖第一和第二多层复合材料的侧表面,以及第一多层复合材料和第二多层复合材料之间的氧化物膜和第一电极的表面。 第一多层复合材料和第二多层复合材料各自包括压电层和压电层上的第二电极。

    Radio frequency amplifier circuit and mobile communication terminal using the same
    8.
    发明授权
    Radio frequency amplifier circuit and mobile communication terminal using the same 有权
    射频放大器电路和移动通信终端使用相同

    公开(公告)号:US08040186B2

    公开(公告)日:2011-10-18

    申请号:US12626056

    申请日:2009-11-25

    IPC分类号: H03G3/10

    CPC分类号: H03F3/189 H03F1/30

    摘要: A bias circuit 12 includes: a transistor Q5 operable to supply, to an amplifier 11, a bias current in accordance with a base current supplied thereto; a transistor Q3 operable to pass a current in accordance with a reference voltage Vref; a transistor Q2 operable to correct, in accordance with the current passed by the transistor Q3, the base current to be supplied to the transistor Q5, so as to compensate a temperature characteristic represented by the transistor Q5; and a bias changing section (of a transistor Q4, and resistances R5, R6, and R7), connected to a base of the transistor Q5, operable to change, in accordance with a control voltage VSW, an amount of the base current to be supplied to the transistor Q5. The amplifier 11 amplifies, by using the bias current supplied by the bias circuit 12, a radio frequency signal having been inputted thereto.

    摘要翻译: 偏置电路12包括:晶体管Q5,其可操作以根据提供给其的基极电流向放大器11提供偏置电流; 晶体管Q3,其可操作以根据参考电压Vref传递电流; 晶体管Q2,其可操作以根据晶体管Q3通过的电流校正要提供给晶体管Q5的基极电流,以便补偿由晶体管Q5表示的温度特性; 和晶体管Q5的基极连接的晶体管Q4的偏置改变部(电阻R5,R6,R7),可以根据控制电压VSW将基极电流的量变更为 提供给晶体管Q5。 放大器11通过使用由偏置电路12提供的偏置电流放大输入的射频信号。

    Radio frequency amplifier circuit and mobile communication terminal using the same
    10.
    发明授权
    Radio frequency amplifier circuit and mobile communication terminal using the same 有权
    射频放大器电路和移动通信终端使用相同

    公开(公告)号:US07639080B2

    公开(公告)日:2009-12-29

    申请号:US11808157

    申请日:2007-06-07

    IPC分类号: H03G3/10

    CPC分类号: H03F3/189 H03F1/30

    摘要: A bias circuit 12 includes: a transistor Q5 operable to supply, to an amplifier 11, a bias current in accordance with a base current supplied thereto; a transistor Q3 operable to pass a current in accordance with a reference voltage Vref; a transistor Q2 operable to correct, in accordance with the current passed by the transistor Q3, the base current to be supplied to the transistor Q5, so as to compensate a temperature characteristic represented by the transistor Q5; and a bias changing section (of a transistor Q4, and resistances R5, R6, and R7), connected to a base of the transistor Q5, operable to change, in accordance with a control voltage VSW, an amount of the base current to be supplied to the transistor Q5. The amplifier 11 amplifies, by using the bias current supplied by the bias circuit 12, a radio frequency signal having been inputted thereto.

    摘要翻译: 偏置电路12包括:晶体管Q5,其可操作以根据提供给其的基极电流向放大器11提供偏置电流; 晶体管Q3,其可操作以根据参考电压Vref传递电流; 晶体管Q2,其可操作以根据晶体管Q3通过的电流校正要提供给晶体管Q5的基极电流,以便补偿由晶体管Q5表示的温度特性; 和晶体管Q5的基极连接的晶体管Q4的偏置改变部(电阻R5,R6,R7),可以根据控制电压VSW将基极电流的量变更为 提供给晶体管Q5。 放大器11通过使用由偏置电路12提供的偏置电流放大输入的射频信号。