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公开(公告)号：US07307379B2
公开(公告)日：2007-12-11
申请号：US10550750
申请日：2004-04-13
IPC分类号： H01J1/62
CPC分类号： G03G15/0291
摘要： An electron emitting element is of a structure in which a semiconductor layer is formed between an upper electrode and a lower electrode, wherein an organic compound adsorption layer is formed on a semiconductor surface of the semiconductor layer by causing the organic compound to be adsorbed on the semiconductor surface. Herein, the semiconductor layer can be made of silicon or polysilicon and partly or as a whole porous. The absorbed organic compound can be a non-cyclic hydrocarbon, a compound obtained by coupling at least an aldehyde group to a non-cyclic hydrocarbon, or a non-cyclic hydrocarbon having an unsaturated bond. As a result, there can be provided an electron emitting element capable of stably operating in the atmosphere or in a low vacuum even when being operated in the atmosphere or in the low vacuum and an imaging device using the electron emitting element.
摘要翻译： 电子发射元件是其中在上电极和下电极之间形成半导体层的结构，其中通过使有机化合物被吸附在半导体层的半导体表面上而形成有机化合物吸附层 半导体表面。 这里，半导体层可以由硅或多晶硅制成，部分或整体是多孔的。 所吸收的有机化合物可以是非环状烃，通过将至少一个醛基与非环状烃偶联而得到的化合物或具有不饱和键的非环状烃。 结果，可以提供即使在大气中还是在低真空中操作的情况下即使在大气中也可以在低真空中稳定地工作的电子发射元件和使用该电子发射元件的成像装置。
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公开(公告)号：US20060291905A1
公开(公告)日：2006-12-28
申请号：US10557061
申请日：2004-04-28
IPC分类号： G03G15/02
CPC分类号： G03G15/02
摘要： Provided are an electron emitter continuously emitting electrons stably even in the atmosphere, a charger using the electron emitter, and a charging method using the charger. The electron emitter includes a electron emitting element consisting of a first electrode, a second electrode, and a semiconductor layer formed therebetween, and a power supply for alternately applying a positive voltage enabling electron emission and a negative voltage having a polarity opposite to the positive voltage. At least a part of the surface on the first electrode side of the semiconductor layer is formed of a porous semiconductor layer. Electrons captured in the porous semiconductor layer in the course of electron emission with application of a positive voltage disturb electron emission from the electron emitting element. Such electrons, however, are removed by application of a negative voltage.
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公开(公告)号：US20060186786A1
公开(公告)日：2006-08-24
申请号：US10550750
申请日：2004-04-13
CPC分类号： G03G15/0291
摘要： An electron emitting element is of a structure in which a semiconductor layer is formed between an upper electrode and a lower electrode, wherein an organic compound adsorption layer is formed on a semiconductor surface of the semiconductor layer by causing the organic compound to be adsorbed on the semiconductor surface. Herein, the semiconductor layer can be made of silicon or polysilicon and partly or as a whole porous. The absorbed organic compound can be a non-cyclic hydrocarbon, a compound obtained by coupling at least an aldehyde group to a non-cyclic hydrocarbon, or a non-cyclic hydrocarbon having an unsaturated bond. As a result, there can be provided an electron emitting element capable of stably operating in the atmosphere or in a low vacuum even when being operated in the atmosphere or in the low vacuum and an imaging device using the electron emitting element.
摘要翻译： 电子发射元件是其中在上电极和下电极之间形成半导体层的结构，其中通过使有机化合物被吸附在半导体层的半导体表面上而形成有机化合物吸附层 半导体表面。 这里，半导体层可以由硅或多晶硅制成，部分或整体是多孔的。 所吸收的有机化合物可以是非环状烃，通过将至少一个醛基与非环状烃偶联而得到的化合物或具有不饱和键的非环状烃。 结果，可以提供即使在大气中还是在低真空中操作的情况下即使在大气中也可以在低真空中稳定地工作的电子发射元件和使用该电子发射元件的成像装置。
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公开(公告)号：US07515851B2
公开(公告)日：2009-04-07
申请号：US10557061
申请日：2004-04-28
IPC分类号： G03G15/02
CPC分类号： G03G15/02
摘要： Provided are an electron emitter continuously emitting electrons stably even in the atmosphere, a charger using the electron emitter, and a charging method using the charger. The electron emitter includes a electron emitting element consisting of a first electrode, a second electrode, and a semiconductor layer formed therebetween, and a power supply for alternately applying a positive voltage enabling electron emission and a negative voltage having a polarity opposite to the positive voltage. At least a part of the surface on the first electrode side of the semiconductor layer is formed of a porous semiconductor layer. Electrons captured in the porous semiconductor layer in the course of electron emission with application of a positive voltage disturb electron emission from the electron emitting element. Such electrons, however, are removed by application of a negative voltage.
摘要翻译： 提供了即使在大气中也稳定地发射电子的电子发射体，使用电子发射体的充电器和使用该充电器的充电方法。 电子发射器包括由第一电极，第二电极和形成在其间的半导体层组成的电子发射元件，以及用于交替施加能够进行电子发射的正电压的电源和具有与正电压相反的极性的负电压 。 半导体层的第一电极侧的表面的至少一部分由多孔半导体层形成。 在电子发射的过程中在多孔半导体层中捕获的电子被施加来自电子发射元件的正电压干扰电子发射。 然而，这样的电子通过施加负电压被去除。
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5.发明授权公开(公告)号：US07306990B2
公开(公告)日：2007-12-11
申请号：US10535941
申请日：2003-11-28
申请人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
发明人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
IPC分类号： H01L21/336 , H01L21/00 , H01L29/788 , H01L21/3205 , H01L21/4763 , H01L29/76
CPC分类号： H01L29/7881 , G11C23/00
摘要： An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes 8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).
摘要翻译： 一种能够通过机械操作读取和写入信息的信息存储装置，其中栅极绝缘膜具有空腔（6）和在空腔中具有两个稳定偏转状态的浮动栅层（5） 6），通过偏转晶体管的沟道侧稳定状态，并且通过偏向栅极（7）而稳定的状态，可以通过改变浮动栅极层（5）的稳定偏转状态来进行信息的写入和读取 ）通过积存在浮动栅极层（5）中的电子（或正空穴8）与外部电场之间的库仑相互作用力，并且基于浮动栅极层（5）的状态读取沟道电流变化。
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公开(公告)号：US07119361B2
公开(公告)日：2006-10-10
申请号：US10972550
申请日：2004-10-25
IPC分类号： H01L29/08
CPC分类号： C25D11/32
摘要： A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.
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公开(公告)号：US20050085001A1
公开(公告)日：2005-04-21
申请号：US10972550
申请日：2004-10-25
IPC分类号： C25D11/32 , H01L21/00 , H01L21/31 , H01L21/469
CPC分类号： C25D11/32
摘要： A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.
摘要翻译： 多孔硅结构通过阳极氧化该结构而稳定化，然后进行化学官能化以保护未氧化的表面区域，优选在1-癸烯存在下在热条件下进行。 该方法在结构表面上产生保护性有机单层，使其高度稳定。
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8.发明申请公开(公告)号：US20110204290A1
公开(公告)日：2011-08-25
申请号：US13061592
申请日：2009-08-26
申请人： Nobuyoshi Koshida , Bernard Gelloz
发明人： Nobuyoshi Koshida , Bernard Gelloz
CPC分类号： C09K11/59
摘要： Provided is a silicon-based blue phosphorescent material having a longer luminescence lifetime, a high luminescence intensity, and excellent long-term stability and reproducibility. A method for producing a silicon-based blue-green phosphorescent material controllable by an excitation wavelength, which comprises a first step of anodizing the surface of silicon to prepare a nanocrystal silicon or a nanostructure silicon, a second step of processing the nanocrystal silicon or the nanostructure silicon prepared in the first step for rapid thermal oxidation, and a third step of processing the nanocrystal silicon or nanostructure silicon having been processed for rapid thermal oxidation in the second step, for high-pressure water vapor annealing. Further, a silicon-based blue-green phosphorescent material controllable by an excitation wavelength, which comprises a silicon oxide film in which numerous nanoscale crystal silicon or nanostructure silicon embedded therein, and which has a transition property between molecular energy levels through triplet excitons having a relaxation time of not shorter than 1 ms, or luminescence transition through quasi-stable excitation or trap having a relaxation time of not shorter than 1 ms.
摘要翻译： 具有发光寿命长，发光强度高，长期稳定性和再现性优异的硅系蓝色磷光材料。 一种可由激发波长控制的硅基蓝绿色磷光发光材料的制造方法，其特征在于，包括对硅表面进行阳极氧化以制备纳米晶体硅或纳米结构硅的第一工序，将纳米晶硅或第 在第一步中制备的用于快速热氧化的纳米结构硅，以及在第二步骤中处理用于快速热氧化的纳米晶体硅或纳米结构硅的第三步骤，用于高压水蒸气退火。 此外，由激发波长控制的硅基蓝绿色磷光材料，其包含其中嵌入有许多纳米级晶体硅或纳米结构硅的氧化硅膜，并且其具有通过三线态激子的分子能级之间的转移特性，具有 不小于1ms的弛豫时间，或具有不小于1ms的弛豫时间的准稳态激发或阱的发光跃迁。
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公开(公告)号：US20100025145A1
公开(公告)日：2010-02-04
申请号：US12521120
申请日：2007-12-17
申请人： Masato Hayashi , Masami Yakabe , Nobuyoshi Koshida
发明人： Masato Hayashi , Masami Yakabe , Nobuyoshi Koshida
CPC分类号： G10K15/04
摘要： A pressure wave generator (1) includes a thermally conductive substrate (2), a heat insulating layer (3) formed on one main surface of the substrate (2), an insulator layer (5) formed on the heat insulating layer (3), and a heat generator (4) formed on the insulator layer (5) to generate heat when a current containing an alternating component is applied thereto. The heat insulating layer (3) is formed containing at least one of silicon nitride (Si3N4), silicon dioxide (SiO2), aluminum oxide (Al2O3), magnesium oxide (MgO), diamond crystalline carbon (C), aluminum nitride (AlN), and silicon carbide (SiC). The heat generator (4) is formed containing, for example, gold (Au) or tungsten (W).
摘要翻译： 压力波发生器（1）包括导热基板（2），形成在基板（2）的一个主表面上的绝热层（3），形成在绝热层（3）上的绝缘体层（5） 以及形成在所述绝缘体层（5）上的热发生器（4），以在施加包含交替分量的电流时产生热量。 该绝热层（3）形成为含有氮化硅（Si 3 N 4），二氧化硅（SiO 2），氧化铝（Al 2 O 3），氧化镁（MgO），金刚石结晶碳（C），氮化铝（AlN） ，和碳化硅（SiC）。 形成有例如金（Au）或钨（W）的发热体（4）。
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10.发明申请LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND INFORMATION DISPLAY DEVICE 审中-公开发光元件，发光装置和信息显示装置公开(公告)号：US20090078928A1
公开(公告)日：2009-03-26
申请号：US11658578
申请日：2004-07-27
申请人： Nobuyoshi Koshida , Akira Kojima
发明人： Nobuyoshi Koshida , Akira Kojima
IPC分类号： H01L33/00
CPC分类号： H01L51/52 , H01L51/0059 , H01L51/5092
摘要： A light-emitting device has a structure in which a semiconductor or a conductive substrate having a bottom electrode, a layer for generating hot electrons, quasi-ballistic electrons or ballistic electrons, a luminous layer, and a semitransparent surface electrode are deposited, or a structure in which a holes supply layer is provided between the luminous layer and the semitransparent surface electrode having the same structure. The light-emitting device realizes highly efficient light emission in a range from infrared rays to ultraviolet ray with smaller driving current than that of conventional injection-type or intrinsic EL devices.
摘要翻译： 发光装置具有其中沉积具有底部电极，产生热电子的层，准弹道电子或弹道电子的半导体或导电基板，发光层和半透明表面电极的结构，或者 在具有相同结构的发光层和半透明表面电极之间设置有空穴供给层的结构。 发光装置在比传统的注射型或本征EL器件的驱动电流小的红外线到紫外线的范围内实现高效的发光。
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