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公开(公告)号：US07262065B2
公开(公告)日：2007-08-28
申请号：US11226728
申请日：2005-09-14
CPC分类号： H01L28/57 , H01L27/11507 , H01L28/65
摘要： A method for manufacturing a ferroelectric memory includes: (a) forming first and second contact sections on a first dielectric layer formed above a base substrate; (b) forming a laminated body having a lower electrode, a ferroelectric layer and an upper electrode successively laminated; (c) forming a conductive hard mask above the laminated body and etching an area of the laminated body exposed through the hard mask, to thereby form a ferroelectric capacitor above the first contact section; (d) forming above the first dielectric layer a second dielectric layer that covers the hard mask, the ferroelectric capacitor and the second contact section; (e) forming a contact hole in the second dielectric layer which exposes the second contact section; (f) providing a conductive layer in an area including the contact hole for forming a third contact section; and (g) polishing the conductive layer and the second dielectric layer until the hard mask above the ferroelectric capacitor is exposed.
摘要翻译： 制造铁电存储器的方法包括：（a）在形成在基底基板上的第一电介质层上形成第一和第二接触部分; （b）依次层叠具有下电极，铁电层和上电极的叠层体; （c）在层叠体上形成导电硬掩模，并蚀刻通过硬掩模暴露的层叠体的区域，从而在第一接触部分上形成铁电电容器; （d）在所述第一电介质层的上方形成覆盖所述硬掩模，所述强电介质电容器和所述第二接触部的第二电介质层; （e）在所述第二电介质层中形成暴露所述第二接触部分的接触孔; （f）在包括用于形成第三接触部分的接触孔的区域中提供导电层; 和（g）研磨导电层和第二介电层，直到暴露铁电电容器上方的硬掩模。
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公开(公告)号：US20060099722A1
公开(公告)日：2006-05-11
申请号：US11226728
申请日：2005-09-14
IPC分类号： H01L21/00
CPC分类号： H01L28/57 , H01L27/11507 , H01L28/65
摘要： A method for manufacturing a ferroelectric memory includes: (a) forming first and second contact sections on a first dielectric layer formed above a base substrate; (b) forming a laminated body having a lower electrode, a ferroelectric layer and an upper electrode successively laminated; (c) forming a conductive hard mask above the laminated body and etching an area of the laminated body exposed through the hard mask, to thereby form a ferroelectric capacitor above the first contact section; (d) forming above the first dielectric layer a second dielectric layer that covers the hard mask, the ferroelectric capacitor and the second contact section; (e) forming a contact hole in the second dielectric layer which exposes the second contact section; (f) providing a conductive layer in an area including the contact hole for forming a third contact section; and (g) polishing the conductive layer and the second dielectric layer until the hard mask above the ferroelectric capacitor is exposed.
摘要翻译： 制造铁电存储器的方法包括：（a）在形成在基底基板上的第一电介质层上形成第一和第二接触部分; （b）依次层叠具有下电极，铁电层和上电极的叠层体; （c）在层叠体上形成导电硬掩模，并蚀刻通过硬掩模暴露的层叠体的区域，从而在第一接触部分上形成铁电电容器; （d）在所述第一电介质层的上方形成覆盖所述硬掩模，所述强电介质电容器和所述第二接触部的第二电介质层; （e）在所述第二电介质层中形成暴露所述第二接触部分的接触孔; （f）在包括用于形成第三接触部分的接触孔的区域中提供导电层; 和（g）研磨导电层和第二介电层，直到暴露铁电电容器上方的硬掩模。
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3.发明申请公开(公告)号：US20070187735A1
公开(公告)日：2007-08-16
申请号：US11787450
申请日：2007-04-16
申请人： Katsuo Takano
发明人： Katsuo Takano
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57
摘要： A first hydrogen barrier film and an intermediate layer are formed on an interlayer dielectric film. A ferroelectric capacitor is formed on the intermediate layer, and a second hydrogen barrier film is formed over the entire surface including on the upper surface and side surfaces of the ferroelectric capacitor and on the intermediate layer. Then, the second hydrogen barrier film and the intermediate layer are removed while leaving at least portions on the upper surface and side surfaces of the ferroelectric capacitor. Then, a third hydrogen barrier film is formed on the second hydrogen barrier film, on side surfaces of the second hydrogen barrier film and the intermediate layer, and on the first hydrogen barrier film.
摘要翻译： 在层间电介质膜上形成第一氢阻挡膜和中间层。 在中间层上形成铁电电容器，在包含铁电电容器的上表面和侧面以及中间层的整个表面上形成第二氢阻挡膜。 然后，除去第二氢阻挡膜和中间层，同时留下铁电电容器的上表面和侧表面上的至少一部分。 然后，在第二氢阻挡膜上，第二氢阻挡膜和中间层的侧面，以及第一氢阻挡膜上形成第三氢阻挡膜。
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4.发明申请公开(公告)号：US20050280059A1
公开(公告)日：2005-12-22
申请号：US11155031
申请日：2005-06-16
申请人： Katsuo Takano
发明人： Katsuo Takano
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/105 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57
摘要： A first hydrogen barrier film and an intermediate layer are formed on an interlayer dielectric film. A ferroelectric capacitor is formed on the intermediate layer, and a second hydrogen barrier film is formed over the entire surface including on the upper surface and side surfaces of the ferroelectric capacitor and on the intermediate layer. Then, the second hydrogen barrier film and the intermediate layer are removed while leaving at least portions on the upper surface and side surfaces of the ferroelectric capacitor. Then, a third hydrogen barrier film is formed on the second hydrogen barrier film, on side surfaces of the second hydrogen barrier film and the intermediate layer, and on the first hydrogen barrier film.
摘要翻译： 在层间电介质膜上形成第一氢阻挡膜和中间层。 在中间层上形成铁电电容器，在包含铁电电容器的上表面和侧面以及中间层的整个表面上形成第二氢阻挡膜。 然后，除去第二氢阻挡膜和中间层，同时留下铁电电容器的上表面和侧表面上的至少一部分。 然后，在第二氢阻挡膜上，第二氢阻挡膜和中间层的侧面，以及第一氢阻挡膜上形成第三氢阻挡膜。
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5.发明授权公开(公告)号：US07223614B2
公开(公告)日：2007-05-29
申请号：US11155031
申请日：2005-06-16
申请人： Katsuo Takano
发明人： Katsuo Takano
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57
摘要： A first hydrogen barrier film and an intermediate layer are formed on an interlayer dielectric film. A ferroelectric capacitor is formed on the intermediate layer, and a second hydrogen barrier film is formed over the entire surface including on the upper surface and side surfaces of the ferroelectric capacitor and on the intermediate layer. Then, the second hydrogen barrier film and the intermediate layer are removed while leaving at least portions on the upper surface and side surfaces of the ferroelectric capacitor. Then, a third hydrogen barrier film is formed on the second hydrogen barrier film, on side surfaces of the second hydrogen barrier film and the intermediate layer, and on the first hydrogen barrier film.
摘要翻译： 在层间电介质膜上形成第一氢阻挡膜和中间层。 在中间层上形成铁电电容器，在包含铁电电容器的上表面和侧面以及中间层的整个表面上形成第二氢阻挡膜。 然后，除去第二氢阻挡膜和中间层，同时留下铁电电容器的上表面和侧表面上的至少一部分。 然后，在第二氢阻挡膜上，第二氢阻挡膜和中间层的侧面，以及第一氢阻挡膜上形成第三氢阻挡膜。
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