Flow sensor
    1.
    发明授权
    Flow sensor 失效
    流量传感器

    公开(公告)号:US06705160B2

    公开(公告)日:2004-03-16

    申请号:US10197474

    申请日:2002-07-18

    IPC分类号: G01F168

    CPC分类号: G01F1/692

    摘要: A thin-film type flow sensor having a thin-film part in which a plurality of patterned resistor films are sandwiched between a pair of insulator films. The resistance ratios among the resistor films are minimized from one sensor to another made from the same wafer. The flow sensor has a lower insulator film, the resistor films, and an upper film laminated in succession on a substrate. The resistor films include a patterned fluid thermometer, a temperature detector, and a heater. The heater has a wiring configuration in which resistor elements are connected in a parallel manner. The wiring widths of the heater and the thermometer can thus be made identical, so that the resistance ratios become invariant over the wafer surface, irrespective of a disparity in etching variations.

    摘要翻译: 一种薄膜型流量传感器,其具有多个图案化的电阻膜夹在一对绝缘膜之间的薄膜部分。 电阻膜之间的电阻比从一个传感器到另一个由相同晶片制成的电阻比最小化。 流量传感器具有下层绝缘膜,电阻膜和在基片上连续层压的上层膜。 电阻膜包括图案化流体温度计,温度检测器和加热器。 加热器具有其中电阻元件以并联方式连接的布线配置。 因此,加热器和温度计的布线宽度可以相同,使得电阻比在晶片表面上变得不变,而不管蚀刻变化的不同。

    TEMPERATURE SENSOR AND MANUFACTURING METHOD OF TEMPERATURE SENSOR
    2.
    发明申请
    TEMPERATURE SENSOR AND MANUFACTURING METHOD OF TEMPERATURE SENSOR 审中-公开
    温度传感器温度传感器及其制造方法

    公开(公告)号:US20110227040A1

    公开(公告)日:2011-09-22

    申请号:US13043842

    申请日:2011-03-09

    IPC分类号: H01L29/66 H01L21/02

    CPC分类号: G01K7/226 G01K7/223

    摘要: A temperature sensor includes a semiconductor substrate and a quantum well structural part disposed on the semiconductor substrate. The semiconductor substrate is made of a plurality of elements. The quantum well structural part has a resistance value that changes with temperature. The quantum well structural part includes a plurality of semiconductor layers made of the elements. The semiconductor layers include a plurality of quantum barrier layers and a quantum well layer disposed between the quantum barrier layers. When the semiconductor substrate has a lattice constant “a,” each of the quantum barrier layers has a lattice constant “b,” and the quantum well layer has a lattice constant “c,” the semiconductor substrate, the quantum barrier layers, and the quantum well layer satisfy a relationship of b

    摘要翻译: 温度传感器包括半导体衬底和设置在半导体衬底上的量子阱结构部分。 半导体衬底由多个元件制成。 量子阱结构部分具有随温度变化的电阻值。 量子阱结构部分包括由元件制成的多个半导体层。 半导体层包括多个量子势垒层和设置在量子势垒层之间的量子阱层。 当半导体衬底具有晶格常数“a”时,每个量子势垒层具有晶格常数“b”,并且量子阱层具有晶格常数“c”,半导体衬底,量子势垒层和 量子阱层满足b

    Apparatus for measuring flow amount
    4.
    发明授权
    Apparatus for measuring flow amount 有权
    用于测量流量的装置

    公开(公告)号:US06938473B2

    公开(公告)日:2005-09-06

    申请号:US10298230

    申请日:2002-11-18

    IPC分类号: G01F1/684 G01F1/68

    CPC分类号: G01F1/6842

    摘要: An airflow meter has a membrane type sensor element. The sensor element is supported on a support member so that a sensing surface of the sensor element is in parallel to the airflow direction. The airflow meter has at least one means for protecting the sensor element from dust such as foreign particles. The protecting means is provided with an obstruction member that is disposed upstream or downstream of the sensor element with respect to the airflow direction. The sensor element is hidden behind the obstruction member. The obstruction member has gradually spreading surfaces and gradually converging surfaces along the airflow direction. Alternatively, the protecting means can be provided with a deflector, a cover member, a flow guide member, an inlet or a dust collector.

    摘要翻译: 气流计具有膜式传感器元件。 传感器元件支撑在支撑构件上,使得传感器元件的感测表面平行于气流方向。 气流计具有至少一种用于保护传感器元件免受诸如外来颗粒的灰尘的装置。 保护装置设置有相对于气流方向设置在传感器元件的上游或下游的阻塞构件。 传感器元件隐藏在阻塞构件后面。 阻塞构件具有逐渐扩散的表面并沿着气流方向逐渐收敛表面。 或者,保护装置可以设置有偏转器,盖构件,导流构件,入口或集尘器。

    Flow sensor
    5.
    发明授权
    Flow sensor 有权
    流量传感器

    公开(公告)号:US06701782B2

    公开(公告)日:2004-03-09

    申请号:US10199116

    申请日:2002-07-22

    IPC分类号: G01F168

    CPC分类号: G01F1/692

    摘要: A flow sensor, which includes a diaphragm, is made such that the diaphragm is flat or outwardly deformed to allow fluid flow rate measurements at higher flow rates. The diaphragm is made of an upper set of insulating films, electric devices, and a lower set of insulating films. The component layers of the diaphragm are formed such that the average stress in the upper set of insulating films is more compressive than the average stress in the lower set of insulating films.

    摘要翻译: 包括隔膜的流量传感器被制成使得隔膜是平坦的或向外变形的,以允许在较高流速下进行流体流速测量。 隔膜由上一组绝缘膜,电气设备和下一组绝缘膜制成。 隔膜的部件层形成为使得上部绝缘膜中的平均应力比下部绝缘膜中的平均应力更大的压缩。

    Thin film sensor, method of manufacturing thin film sensor, and flow sensor
    6.
    发明授权
    Thin film sensor, method of manufacturing thin film sensor, and flow sensor 有权
    薄膜传感器,薄膜传感器的制造方法和流量传感器

    公开(公告)号:US06698283B2

    公开(公告)日:2004-03-02

    申请号:US10195564

    申请日:2002-07-16

    IPC分类号: G01F168

    CPC分类号: G01F1/6845

    摘要: A flow sensor includes a substrate in which a cavity is formed. A thin film structure is located above the cavity. The thin film structure includes a patterned multilayer film. A dummy film layer is formed or a number of dummy film layers are formed in close proximity to the patterned multilayer film to protect the multilayer film from the effect of reduction gas.

    摘要翻译: 流量传感器包括其中形成空腔的基板。 薄膜结构位于空腔上方。 薄膜结构包括图案化多层膜。 形成虚拟膜层,或者在图案化的多层膜附近形成多个虚设膜层,以保护多层膜免受还原气体的影响。

    Fabry-perot interferometer and manufacturing method of the same
    7.
    发明申请
    Fabry-perot interferometer and manufacturing method of the same 审中-公开
    法布里 - 珀罗干涉仪及其制造方法相同

    公开(公告)号:US20110019202A1

    公开(公告)日:2011-01-27

    申请号:US12805225

    申请日:2010-07-20

    IPC分类号: G01B9/02

    CPC分类号: G02B26/001 G01J3/26

    摘要: A Fabry-Perot interferometer and a manufacturing method of the same are disclosed. The Fabry-Perot interferometer includes a first mirror structure and a second mirror structure opposed to each other with a gap therebetween. A first mirror and a first electrode of the first mirror structure are electrically insulated from each other, or, a second mirror and a second electrode of the second mirror structure are electrically insulated from each other. In a state of voltage application between the first and second electrode, a distance “dmi” between the first mirror and the second mirror is shorter than a distance “dei” between a first-electrode-inclusive-portion and a second-electrode-inclusive-portion.

    摘要翻译: 公开了一种法布里 - 珀罗干涉仪及其制造方法。 法布里 - 珀罗干涉仪包括彼此相对并且间隔开的第一反射镜结构和第二反射镜结构。 第一反射镜结构的第一反射镜和第一电极彼此电绝缘,或者第二反射镜结构的第二反射镜和第二电极彼此电绝缘。 在第一和第二电极之间的施加电压的状态下,第一反射镜和第二反射镜之间的距离“dmi”比第一电极包含部分和第二电极之间的距离“dei”短 -一部分。

    Gas sensor and method of fabricating a gas sensor
    8.
    发明申请
    Gas sensor and method of fabricating a gas sensor 审中-公开
    气体传感器和制造气体传感器的方法

    公开(公告)号:US20060194332A1

    公开(公告)日:2006-08-31

    申请号:US11410093

    申请日:2006-04-25

    IPC分类号: G01N33/00

    CPC分类号: G01N27/124

    摘要: A more reliable gas sensor includes a support film formed on a surface of a substrate and a heater electrode. Surrounding the heater electrode is a heater electrical insulation layer 4. Detection electrodes are formed above the electrical insulation layer. A flat insulating layer is formed over the heater insulation layer, and surfaces of the detection electrodes are exposed and flush with the upper surface of the flat insulating layer. A sensitive film is formed above the flat insulating layer in contact with the surfaces of the detection electrodes. A hollow cavity is formed in the substrate.

    摘要翻译: 更可靠的气体传感器包括形成在基板的表面上的支撑膜和加热器电极。 加热器电极周围是加热器电绝缘层4。 检测电极形成在电绝缘层的上方。 在加热器绝缘层之上形成平坦的绝缘层,并且检测电极的表面暴露并与平坦绝缘层的上表面齐平。 敏感膜形成在与检测电极的表面接触的平坦绝缘层的上方。 在基板中形成中空腔。

    Fluid flow sensor and method of fabricating the same
    9.
    发明授权
    Fluid flow sensor and method of fabricating the same 失效
    流体流量传感器及其制造方法

    公开(公告)号:US06768291B2

    公开(公告)日:2004-07-27

    申请号:US10107443

    申请日:2002-03-28

    IPC分类号: G01N2700

    CPC分类号: G01F1/6845

    摘要: In a sensor chip for a fluid flow sensor, a thin film portion is formed above a hollow cavity portion while leaving thin film layers formed on the surface of a substrate. A conductor is provided on the inner wall face of a through hole formed to penetrate the substrate to thereby electrically connect a detecting portion constituted by a conductor film in the thin film layers and a substrate conductor portion formed on the rear face side of the through hole. The surface of a circuit board is formed with a control circuit and a base conductor portion electrically connected to the control circuit. The sensor chip and the circuit board are layered and the substrate conductor portion and the base conductor portion are electrically connected.

    摘要翻译: 在用于流体流量传感器的传感器芯片中,在中空空腔部分的上方形成薄膜部分,同时留下形成在基板表面上的薄膜层。 在形成为穿透基板的通孔的内壁面上设置有导体,由此将由薄膜层中的导体膜构成的检测部和形成在通孔的背面侧的基板导体部电连接 。 电路板的表面形成有电连接到控制电路的控制电路和基底导体部分。 传感器芯片和电路板被层叠,并且基板导体部分和基底导体部分电连接。

    Optical gas concentration detector and method of producing structure used in the detector
    10.
    发明授权
    Optical gas concentration detector and method of producing structure used in the detector 有权
    光学气体浓度检测器及其检测方法

    公开(公告)号:US07807061B2

    公开(公告)日:2010-10-05

    申请号:US11822748

    申请日:2007-07-10

    IPC分类号: C23F1/00

    CPC分类号: G01N21/031 G01N21/3504

    摘要: A method of producing a structure by three-dimensionally processing a flat member includes a preparing, a first forming and a second forming. In the preparing, a substrate is prepared. In the first forming, an etching mask is formed on the substrate. The etching mask has at least two openings, and areas of the two openings are different from each other. In the second forming, at least a part of a three-dimension surface shape of the structure is formed on a surface of the substrate by a dry-etching on the substrate in accordance with the area of the opening of the etching mask.

    摘要翻译: 通过三维处理平坦部件制造结构的方法包括准备,第一成形和第二成形。 在制备中,制备底物。 在第一次成形中,在基板上形成蚀刻掩模。 蚀刻掩模具有至少两个开口,并且两个开口的区域彼此不同。 在第二次成形中,通过根据蚀刻掩模的开口面积在基板上通过干法蚀刻在基板的表面上形成三维表面形状的至少一部分。