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    Apparatus for measuring flow amount
    1.
    发明授权
    Apparatus for measuring flow amount 有权
    用于测量流量的装置

    公开(公告)号：US06938473B2

    公开(公告)日：2005-09-06

    申请号：US10298230

    申请日：2002-11-18

    申请人： Takao Iwaki ,  Toshiyuki Morishita ,  Yasushi Kohno ,  Hiroyuki Wado ,  Yasushi Goka ,  Makoto Tsunekawa ,  Toshirou Gotou ,  Kiyoyuki Sugiura

    发明人： Takao Iwaki ,  Toshiyuki Morishita ,  Yasushi Kohno ,  Hiroyuki Wado ,  Yasushi Goka ,  Makoto Tsunekawa ,  Toshirou Gotou ,  Kiyoyuki Sugiura

    IPC分类号： G01F1/684 ,  G01F1/68

    CPC分类号： G01F1/6842

    摘要： An airflow meter has a membrane type sensor element. The sensor element is supported on a support member so that a sensing surface of the sensor element is in parallel to the airflow direction. The airflow meter has at least one means for protecting the sensor element from dust such as foreign particles. The protecting means is provided with an obstruction member that is disposed upstream or downstream of the sensor element with respect to the airflow direction. The sensor element is hidden behind the obstruction member. The obstruction member has gradually spreading surfaces and gradually converging surfaces along the airflow direction. Alternatively, the protecting means can be provided with a deflector, a cover member, a flow guide member, an inlet or a dust collector.

    摘要翻译： 气流计具有膜式传感器元件。 传感器元件支撑在支撑构件上，使得传感器元件的感测表面平行于气流方向。 气流计具有至少一种用于保护传感器元件免受诸如外来颗粒的灰尘的装置。 保护装置设置有相对于气流方向设置在传感器元件的上游或下游的阻塞构件。 传感器元件隐藏在阻塞构件后面。 阻塞构件具有逐渐扩散的表面并沿着气流方向逐渐收敛表面。 或者，保护装置可以设置有偏转器，盖构件，导流构件，入口或集尘器。

    Steam engine
    3.
    发明授权
    Steam engine 有权
    蒸汽机

    公开(公告)号：US07905090B2

    公开(公告)日：2011-03-15

    申请号：US12228414

    申请日：2008-08-11

    申请人： Shinichi Yatsuzuka ,  Shuzo Oda ,  Yasumasa Hagiwara ,  Toshiyuki Morishita ,  Katsuya Komaki

    发明人： Shinichi Yatsuzuka ,  Shuzo Oda ,  Yasumasa Hagiwara ,  Toshiyuki Morishita ,  Katsuya Komaki

    IPC分类号： F01B29/10

    CPC分类号： F01K27/005

    摘要： A steam engine has a pipe shaped fluid container, a heating and cooling devices respectively provided at a heating and cooling portions of the fluid container, and an output device connected to the fluid container, so that the output device is operated by the fluid pressure change in the fluid container, to generate an electric power. In such a steam engine, an inner radius “r1” of the cooling portion is made to almost equal to a depth “δ1” of the thermal penetration, which is calculated by the following formula (1); δ 1 = 2 ⁢ a 1 ω ( 1 ) wherein, “a1” is a heat diffusivity of the working fluid at its low pressure, and “ω” is an angular frequency of the movement of the working fluid.

    摘要翻译： 蒸汽发动机具有管状流体容器，分别设置在流体容器的加热和冷却部分处的加热和冷却装置以及连接到流体容器的输出装置，使得输出装置由流体压力变化 在流体容器中产生电力。 在这样的蒸汽机中，冷却部的内半径“r1”与通过下式（1）计算出的热贯穿深度“δ1”大致相等。 δ1 = 2a 1ω（1）其中，“a1”是工作流体在其低压下的热扩散率，“ω”是工作流体的运动的角频率。

    ELECTRON EMITTING SOURCE AND MANUFACTURING METHOD OF ELECTRON EMITTING SOURCE
    6.
    发明申请
    ELECTRON EMITTING SOURCE AND MANUFACTURING METHOD OF ELECTRON EMITTING SOURCE 有权
    电子发射源的电子发射和制造方法

    公开(公告)号：US20100301736A1

    公开(公告)日：2010-12-02

    申请号：US12745316

    申请日：2008-07-11

    申请人： Toshiyuki Morishita ,  Yoshinori Terui

    发明人： Toshiyuki Morishita ,  Yoshinori Terui

    IPC分类号： H01J1/15 ,  H01J9/04

    CPC分类号： H01J37/06 ,  H01J37/065 ,  H01J2237/06308 ,  H01J2237/06375

    摘要： An electron emitting source capable of preventing increase in an inter-terminal resistance and a manufacturing method of the electron emitting source. The electron emitting source comprises an electron emitting chip made of rare-earth hexaboride, and a heater constituted by a carbonaceous member for holding and heating the electron emitting chip, wherein an electrically conductive substance is provided in a gap between the electron emitting chip and the heater.

    摘要翻译： 能够防止端子间电阻增加的电子发射源和电子发射源的制造方法。 电子发射源包括由稀土六硼化物制成的电子发射芯片和由用于保持和加热电子发射芯片的碳质元件构成的加热器，其中导电物质设置在电子发射芯片和 加热器。

    External combustion engine
    8.
    发明授权
    External combustion engine 有权
    外燃机

    公开(公告)号：US07493751B2

    公开(公告)日：2009-02-24

    申请号：US11717794

    申请日：2007-03-13

    申请人： Shuzo Oda ,  Shinichi Yatsuzuka ,  Katsuya Komaki ,  Shunji Okemoto ,  Toshiyuki Morishita

    发明人： Shuzo Oda ,  Shinichi Yatsuzuka ,  Katsuya Komaki ,  Shunji Okemoto ,  Toshiyuki Morishita

    IPC分类号： F02C5/00

    CPC分类号： F01K11/00

    摘要： An external combustion engine is disclosed, comprising a container (11) for sealing a working liquid (12) in a way adapted to allow the liquid to flow therein, a heater (13) for heating and vaporizing the working liquid (12) in the container (11), and a cooler (14) for cooling and liquefying the vapor of the working liquid (12) heated and vaporized by the heater (13). The displacement of the working liquid (12) caused by the volume change of the vapor of the working liquid (12) is output by being converted into mechanical energy. In the heated portion (11d) of the container (11) for vaporizing the working liquid (12), the direction of displacement of the working liquid (12) at the parts (17, 19) far from the cooler (14) is changed with respect to the direction of displacement at the part (16) near to the cooler (14).

    摘要翻译： 公开了一种外燃机，包括用于以适于允许液体在其中流动的方式密封工作液体（12）的容器（11），用于加热和蒸发工作液体（12）的加热器（13） 容器（11）和用于冷却和液化由加热器（13）加热和蒸发的工作液体（12）的蒸气的冷却器（14）。 由工作液体（12）的蒸汽的体积变化引起的工作液体（12）的位移通过转换为机械能而被输出。 在用于蒸发工作液体（12）的容器（11）的加热部分（11d）中，改变远离冷却器（14）的部分（17,19）处的工作液体（12）的位移方向被改变 相对于靠近冷却器（14）的部分（16）处的位移方向。

    Silicon carbide semiconductor device
    9.
    发明申请
    Silicon carbide semiconductor device 有权
    碳化硅半导体器件

    公开(公告)号：US20080224150A1

    公开(公告)日：2008-09-18

    申请号：US12073837

    申请日：2008-03-11

    申请人： Naohiro Suzuki ,  Tsuyoshi Yamamoto ,  Toshiyuki Morishita

    发明人： Naohiro Suzuki ,  Tsuyoshi Yamamoto ,  Toshiyuki Morishita

    IPC分类号： H01L29/24

    CPC分类号： H01L29/66068 ,  H01L21/0465 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/0638 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/7828

    摘要： The SiC semiconductor device includes a substrate of a first conduction type made of silicon carbide, a drift layer of the first conduction type made of silicon carbide, the drift layer being less doped than the substrate, a cell portion constituted by a part of the substrate and a part of the drift layer, a circumferential portion constituted by another part of the substrate and another part of the drift layer, the circumferential portion being formed so as to surround the cell portion, and a RESURF layer of a second conduction type formed in a surface portion of the drift layer so as to be located in the circumferential portion. The RESURF layer is constituted by first and second RESURF layers having different impurity concentrations, the second RESURF layer being in contact with an outer circumference of the first RESURF layer and extending to a circumference of the cell portion.

    摘要翻译： SiC半导体器件包括由碳化硅制成的第一导电类型的衬底，由碳化硅制成的第一导电类型的漂移层，漂移层比衬底掺杂少，由衬底的一部分构成的单元部分 以及漂移层的一部分，由基板的另一部分和漂移层的另一部分构成的圆周部分，周向部分形成为围绕电池部分，以及形成在第二导电类型的RESURF层 漂移层的表面部分，以便位于圆周部分中。 RESURF层由具有不同杂质浓度的第一和第二RESURF层构成，第二RESURF层与第一RESURF层的外周接触并延伸到电池单元的周围。

    Silicon carbide semiconductor device and method for manufacturing the same
    10.
    发明授权
    Silicon carbide semiconductor device and method for manufacturing the same 有权
    碳化硅半导体器件及其制造方法

    公开(公告)号：US07355207B2

    公开(公告)日：2008-04-08

    申请号：US11135661

    申请日：2005-05-24

    申请人： Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Hiroki Nakamura ,  Toshiyuki Morishita ,  Takasumi Ohyanagi ,  Atsuo Watanabe

    发明人： Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Hiroki Nakamura ,  Toshiyuki Morishita ,  Takasumi Ohyanagi ,  Atsuo Watanabe

    IPC分类号： H01L29/15 ,  H01L31/0312

    CPC分类号： H01L29/1608 ,  H01L27/098 ,  H01L29/0619 ,  H01L29/66068 ,  H01L29/8083

    摘要： A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.

    摘要翻译： 碳化硅半导体器件的制造方法包括以下步骤：制备包括碳化硅衬底，漂移层和第一半导体层的半导体衬底; 在单元部分中形成多个第一沟槽; 通过外延生长法在每个第一沟槽的内壁上形成栅极层; 在所述半导体衬底的表面上形成第一绝缘膜; 在所述第一绝缘膜上形成用于电连接到所述栅极层的栅电极; 在所述第一绝缘膜上形成用于连接到所述单元部分中的所述第一半导体层的源电极; 以及电连接到所述碳化硅衬底的漏电极。