Light-Emitting Element and Display Device
    1.
    发明申请
    Light-Emitting Element and Display Device 有权
    发光元件和显示设备

    公开(公告)号:US20100148204A1

    公开(公告)日:2010-06-17

    申请号:US12706012

    申请日:2010-02-16

    IPC分类号: H01L33/00

    摘要: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. According to the present invention, a light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

    摘要翻译: 存在如下问题:相对基板或其间设置的诸如SiN之类的防潮层(钝化膜)之间的折射率差异大,空气保持较大,光提取效率低。 此外,存在容易产生由于防潮层而产生剥离或破裂的问题,导致发光元件的可靠性和寿命恶化。 根据本发明,发光元件包括依次堆叠的像素电极,电致发光层,透明电极,钝化膜,应力消除层和低折射率层。 应力消除层用于防止钝化膜的剥离。 低折射率层用于降低发射到空气中的电致发光层中产生的光的反射率。 因此,可以提供具有高可靠性和长寿命的发光元件和使用该发光元件的显示装置。

    Light-emitting element and display device
    4.
    发明授权
    Light-emitting element and display device 有权
    发光元件和显示装置

    公开(公告)号:US08212280B2

    公开(公告)日:2012-07-03

    申请号:US12706012

    申请日:2010-02-16

    IPC分类号: H01L33/00

    摘要: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. According to the present invention, a light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

    摘要翻译: 存在如下问题:相对基板或其间设置的诸如SiN之类的防潮层(钝化膜)之间的折射率差异大,空气保持较大,光提取效率低。 此外,存在容易产生由于防潮层而产生剥离或破裂的问题,导致发光元件的可靠性和寿命恶化。 根据本发明,发光元件包括依次堆叠的像素电极,电致发光层,透明电极,钝化膜,应力消除层和低折射率层。 应力消除层用于防止钝化膜的剥离。 低折射率层用于降低发射到空气中的电致发光层中产生的光的反射率。 因此,可以提供具有高可靠性和长寿命的发光元件和使用该发光元件的显示装置。

    Light-emitting element and display device
    5.
    发明授权
    Light-emitting element and display device 失效
    发光元件和显示装置

    公开(公告)号:US07696524B2

    公开(公告)日:2010-04-13

    申请号:US11733331

    申请日:2007-04-10

    IPC分类号: H01L33/00

    摘要: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. According to the present invention, a light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

    摘要翻译: 存在如下问题:相对基板或其间设置的诸如SiN之类的防潮层(钝化膜)之间的折射率差异大,空气保持较大,光提取效率低。 此外,存在容易产生由于防潮层而产生剥离或破裂的问题,导致发光元件的可靠性和寿命恶化。 根据本发明,发光元件包括依次堆叠的像素电极,电致发光层,透明电极,钝化膜,应力消除层和低折射率层。 应力消除层用于防止钝化膜的剥离。 低折射率层用于降低发射到空气中的电致发光层中产生的光的反射率。 因此,可以提供具有高可靠性和长寿命的发光元件和使用该发光元件的显示装置。

    Light-emitting element and display device
    6.
    发明授权
    Light-emitting element and display device 有权
    发光元件和显示装置

    公开(公告)号:US07202504B2

    公开(公告)日:2007-04-10

    申请号:US11131437

    申请日:2005-05-18

    IPC分类号: H01L27/15

    摘要: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. According to the present invention, a light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

    摘要翻译: 存在如下问题:相对基板或其间设置的诸如SiN之类的防潮层(钝化膜)之间的折射率差异大,空气保持较大,光提取效率低。 此外,存在容易产生由于防潮层而产生剥离或破裂的问题,导致发光元件的可靠性和寿命恶化。 根据本发明,发光元件包括依次堆叠的像素电极,电致发光层,透明电极,钝化膜,应力消除层和低折射率层。 应力消除层用于防止钝化膜的剥离。 低折射率层用于降低发射到空气中的电致发光层中产生的光的反射率。 因此,可以提供具有高可靠性和长寿命的发光元件和使用该发光元件的显示装置。

    LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE
    8.
    发明申请
    LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE 失效
    发光元件和显示装置

    公开(公告)号:US20070181912A1

    公开(公告)日:2007-08-09

    申请号:US11733331

    申请日:2007-04-10

    IPC分类号: H01L27/10

    摘要: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. According to the present invention, a light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

    摘要翻译: 存在如下问题:相对基板或其间设置的诸如SiN之类的防潮层(钝化膜)之间的折射率差异大,空气保持较大,光提取效率低。 此外,存在容易产生由于防潮层而产生剥离或破裂的问题,导致发光元件的可靠性和寿命恶化。 根据本发明,发光元件包括依次堆叠的像素电极,电致发光层,透明电极,钝化膜,应力消除层和低折射率层。 应力消除层用于防止钝化膜的剥离。 低折射率层用于降低发射到空气中的电致发光层中产生的光的反射率。 因此,可以提供具有高可靠性和长寿命的发光元件和使用该发光元件的显示装置。

    Oxide semiconductor, thin film transistor, and display device
    9.
    发明授权
    Oxide semiconductor, thin film transistor, and display device 有权
    氧化物半导体,薄膜晶体管和显示装置

    公开(公告)号:US08878172B2

    公开(公告)日:2014-11-04

    申请号:US12581187

    申请日:2009-10-19

    摘要: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

    摘要翻译: 目的是控制氧化物半导体的组成和缺陷,另一个目的是增加薄膜晶体管的场效应迁移率,并获得具有减小的截止电流的足够的开 - 关比。 解决方案是使用其组成由InMO 3(ZnO)m表示的氧化物半导体,其中M是选自Ga,Fe,Ni,Mn,Co和Al中的一种或多种元素,m优选为非 - 整数大于0且小于1. Zn的浓度低于In和M的浓度。氧化物半导体具有无定形结构。 可以提供氧化物和氮化物层以防止氧化物半导体的污染和劣化。

    Oxide semiconductor, thin film transistor, and display device
    10.
    发明授权
    Oxide semiconductor, thin film transistor, and display device 有权
    氧化物半导体,薄膜晶体管和显示装置

    公开(公告)号:US09136389B2

    公开(公告)日:2015-09-15

    申请号:US12581200

    申请日:2009-10-19

    摘要: An object is to control composition and a defect of an oxide semiconductor. Another object is to increase field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with off current suppressed. The oxide semiconductor is represented by InMO3(ZnO)n (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and n is a non-integer number of greater than or equal to 1 and less than 50) and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al). In addition, the oxide semiconductor has an amorphous structure. Here, n is preferably a non-integer number of greater than or equal to 50, more preferably less than 10.

    摘要翻译: 目的是控制氧化物半导体的组成和缺陷。 另一个目的是增加薄膜晶体管的场效应迁移率,并获得足够的开关比,同时抑制截止电流。 氧化物半导体由InMO 3(ZnO)n(M是选自Ga,Fe,Ni,Mn,Co和Al中的一种或多种元素表示,n是大于或等于1的非整数) 小于50),还含有氢。 在这种情况下,使Zn的浓度低于In和M的浓度(M是选自Ga,Fe,Ni,Mn,Co和Al中的一种或多种元素)。 此外,氧化物半导体具有非晶结构。 这里,n优选为大于或等于50,更优选小于10的非整数。