公开(公告)号：US20220262606A1

公开(公告)日：2022-08-18

申请号：US17736214

申请日：2022-05-04

Applicant: Hitachi High-Tech Corporation

Inventor： Kosa Hirota ,  Masahiro Sumiya ,  Koichi Nakaune ,  Nanako Tamari ,  Satomi Inoue ,  Shigeru Nakamoto

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/66 ,  C23C16/44

Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate.
According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.

公开(公告)号：US11355324B2

公开(公告)日：2022-06-07

申请号：US16084095

申请日：2018-03-19

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Kosa Hirota ,  Masahiro Sumiya ,  Koichi Nakaune ,  Nanako Tamari ,  Satomi Inoue ,  Shigeru Nakamoto

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/66 ,  C23C16/44

Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate.
According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.