公开(公告)号：US20220375726A1

公开(公告)日：2022-11-24

申请号：US17278372

申请日：2020-02-10

Applicant: Hitachi High-Tech Corporation

Inventor： Kosa Hirota ,  Masahiro Sumiya ,  Hirofumi Eitoku ,  Takanori Nakatsuka

IPC: H01J37/32

Abstract: A plasma processing method which can realize a reduction of process variation in the first one of lot processing includes a first step of supplying gas to a processing chamber and a second step of etching the sample by using plasma after the first step. The gas is a gas containing a carbon element and a hydrogen element, a gas containing a chlorine element, or a mixed gas containing all of the gases used in the second step.

公开(公告)号：US20220139678A1

公开(公告)日：2022-05-05

申请号：US17574081

申请日：2022-01-12

Applicant: Hitachi High-Tech Corporation

Inventor： Masaki Ishiguro ,  Masahiro Sumiya ,  Shigeru Shirayone ,  Kazuyuki Ikenaga ,  Tomoyuki Tamura

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

公开(公告)号：US20250046580A1

公开(公告)日：2025-02-06

申请号：US18921861

申请日：2024-10-21

Applicant: Hitachi High-Tech Corporation

Inventor： Nanako Tamari ,  Kosa Hirota ,  Masahiro Sumiya ,  Masahiro Nagatani

IPC: H01J37/32

Abstract: A plasma processing a plasma processing chamber in which an electrode for placing a substrate to be processed is provided; a power supply and a control configured to control the power supply in which the control is configured to execute heat-retaining discharge under a first condition in the substrate is not placed on the electrode inside the plasma processing chamber to generate first plasma to heat an inner wall surface to a first temperature, rapid temperature control discharge under a second condition to generate second plasma inside the plasma processing chamber to heat the inner wall surface to a second temperature higher than the first temperature, and product processing of controlling the power supply under a third condition in a state where the substrate is placed on the electrode to generate third plasma inside the plasma processing chamber to process the substrate.

公开(公告)号：US11664233B2

公开(公告)日：2023-05-30

申请号：US17386892

申请日：2021-07-28

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Masaki Ishiguro ,  Masahiro Sumiya ,  Shigeru Shirayone ,  Tomoyuki Tamura ,  Kazuyuki Ikenaga

IPC: H01L21/3065 ,  H01L21/32 ,  H01L21/67 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32788 ,  H01L21/67069 ,  H01L21/6833

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

公开(公告)号：US20240310827A1

公开(公告)日：2024-09-19

申请号：US18026201

申请日：2022-03-24

Applicant: Hitachi High-Tech Corporation

Inventor： Nanako Tamari ,  Masahiro Sumiya ,  Akira Kagoshima ,  Satoru Matsukura ,  Yuji Nagatani

IPC: G05B23/02 ,  G05B19/048 ,  H01L21/67

CPC classification number: G05B23/0283 ,  G05B19/048 ,  G05B23/024 ,  H01L21/67253 ,  G05B2219/45031

Abstract: An apparatus diagnostic system for diagnosing conditions of a semiconductor manufacturing apparatus includes an apparatus diagnostic apparatus that outputs soundness indicators by a first algorithm with sensor data collected from the semiconductor manufacturing apparatus as an input to the first algorithm, outputs threshold spatial data under normal conditions of the semiconductor manufacturing apparatus by a second algorithm with the soundness indicators as an input to the second algorithm, and diagnoses conditions of the semiconductor manufacturing apparatus by a third algorithm with the soundness indicators and the threshold spatial data as an input to the third algorithm. The soundness indicators are indicators concerning a degree of soundness of conditions of the semiconductor manufacturing apparatus.

公开(公告)号：US12080529B2

公开(公告)日：2024-09-03

申请号：US17108383

申请日：2020-12-01

Applicant: Hitachi High-Tech Corporation

Inventor： Yoshito Kamaji ,  Masahiro Sumiya

IPC: H01J37/32 ,  G06F17/18 ,  G06N3/048 ,  G06N7/00 ,  G06N20/10 ,  H01J37/24 ,  G05B13/00 ,  G05B13/04 ,  H05H13/00

CPC classification number: H01J37/32926 ,  G06F17/18 ,  G06N3/048 ,  G06N7/00 ,  G06N20/10 ,  H01J37/24 ,  H01J37/32 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32972 ,  H01J37/3299 ,  G05B13/00 ,  G05B13/04 ,  H01J2237/1825 ,  H01J2237/334 ,  H01J2237/335 ,  H05H13/005

Abstract: A system that predicts an apparatus state of a plasma processing apparatus including a processing chamber in which a sample is processed is configured to have a data recording unit that records emission data of plasma during processing of the sample and electrical signal data obtained from the apparatus during the plasma processing, an arithmetic unit that includes a first calculation unit for calculating a first soundness index value of the plasma processing apparatus and a first threshold for an abnormality determination using a first algorithm with respect to the recorded emission data and a second calculation unit for calculating a second soundness index value of the plasma processing apparatus and a second threshold for the abnormality determination using a second algorithm with respect to the electrical signal data recorded in the data recording unit, and a determination unit that determines soundness of the plasma processing apparatus using the calculated first soundness index value and the first threshold and the calculated second soundness index value and the second threshold.

公开(公告)号：US20220262606A1

公开(公告)日：2022-08-18

申请号：US17736214

申请日：2022-05-04

Applicant: Hitachi High-Tech Corporation

Inventor： Kosa Hirota ,  Masahiro Sumiya ,  Koichi Nakaune ,  Nanako Tamari ,  Satomi Inoue ,  Shigeru Nakamoto

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/66 ,  C23C16/44

Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate.
According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.

公开(公告)号：US11355324B2

公开(公告)日：2022-06-07

申请号：US16084095

申请日：2018-03-19

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Kosa Hirota ,  Masahiro Sumiya ,  Koichi Nakaune ,  Nanako Tamari ,  Satomi Inoue ,  Shigeru Nakamoto

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/66 ,  C23C16/44

Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate.
According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.

公开(公告)号：US20220157580A1

公开(公告)日：2022-05-19

申请号：US16971255

申请日：2019-07-30

Applicant: Hitachi High-Tech Corporation

Inventor： Shota Umeda ,  Kenji Tamaki ,  Masahiro Sumiya ,  Masaki Ishiguro

IPC: H01J37/32 ,  G06N7/00 ,  G01M99/00

Abstract: In a diagnosis apparatus for diagnosing a state of a plasma processing apparatus, prior distribution information including a probability distribution function is previously obtained for each of first sensors by using first sensor values obtained by the first sensors in a first plasma processing apparatus, a probability distribution in each of second sensors corresponding to each of the first sensors is estimated based on the previously obtained prior distribution information and second sensor values obtained by the second sensors in a second plasma processing apparatus different from the first plasma processing apparatus, and a state of the second plasma processing apparatus is diagnosed by using the estimated probability distribution.

公开(公告)号：US11107664B2

公开(公告)日：2021-08-31

申请号：US16123176

申请日：2018-09-06

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Yoshito Kamaji ,  Masahiro Sumiya

IPC: G06F11/30 ,  H01J37/32 ,  G05B23/02 ,  H01L21/67 ,  H01L21/311 ,  G06N20/00

Abstract: A plasma processing apparatus including a state prediction apparatus that predicts an apparatus state of the plasma processing apparatus configured to include an apparatus data recording unit that records apparatus data output from the plasma processing apparatus during the processing of the sample, a physical environment measurement data recording unit that measures physical environment in the processing chamber and records apparatus physical environment data, data correction unit that extracts a temporal change component of the physical environment from a plurality of the apparatus physical environment data recorded in the physical environment measurement data recording unit and extracts the temporal change component of the physical environment from the apparatus data to remove the temporal change components, and an apparatus state prediction calculation unit that predicts the state of the plasma processing apparatus using the apparatus data from which the temporal change component of the physical environment is removed as input data.