公开(公告)号：US12154765B2

公开(公告)日：2024-11-26

申请号：US17275420

申请日：2020-02-03

Applicant: Hitachi High-Tech Corporation

Inventor： Nanako Tamari ,  Kosa Hirota ,  Masahiro Sumiya ,  Masahiro Nagatani

IPC: H01J37/32

Abstract: A plasma processing apparatus including a plasma processing chamber in which an electrode for placing a substrate to be processed is provided; a power supply; and a control device configured to control the power supply, in which the control device is configured to execute heat-retaining discharge under a first condition in which the substrate is not placed on the electrode inside the plasma processing chamber to generate first plasma to heat an inner wall surface to a first temperature, rapid temperature control discharge under a second condition to generate second plasma inside the plasma processing chamber to heat the inner wall surface to a second temperature higher than the first temperature, and product processing of controlling the power supply under a third condition in a state where the substrate is placed on the electrode to generate third plasma inside the plasma processing chamber to process the substrate.

公开(公告)号：US20250046580A1

公开(公告)日：2025-02-06

申请号：US18921861

申请日：2024-10-21

Applicant: Hitachi High-Tech Corporation

Inventor： Nanako Tamari ,  Kosa Hirota ,  Masahiro Sumiya ,  Masahiro Nagatani

IPC: H01J37/32

Abstract: A plasma processing a plasma processing chamber in which an electrode for placing a substrate to be processed is provided; a power supply and a control configured to control the power supply in which the control is configured to execute heat-retaining discharge under a first condition in the substrate is not placed on the electrode inside the plasma processing chamber to generate first plasma to heat an inner wall surface to a first temperature, rapid temperature control discharge under a second condition to generate second plasma inside the plasma processing chamber to heat the inner wall surface to a second temperature higher than the first temperature, and product processing of controlling the power supply under a third condition in a state where the substrate is placed on the electrode to generate third plasma inside the plasma processing chamber to process the substrate.

公开(公告)号：US20220359166A1

公开(公告)日：2022-11-10

申请号：US17275420

申请日：2020-02-03

Applicant: Hitachi High-Tech Corporation

Inventor： Nanako Tamari ,  Kosa Hirota ,  Masahiro Sumiya ,  Masahiro Nagatani

IPC: H01J37/32

Abstract: A plasma processing apparatus including a plasma processing chamber in which an electrode for placing a substrate to be processed is provided; a power supply; and a control device configured to control the power supply, in which the control device is configured to execute heat-retaining discharge under a first condition in which the substrate is not placed on the electrode inside the plasma processing chamber to generate first plasma to heat an inner wall surface to a first temperature, rapid temperature control discharge under a second condition to generate second plasma inside the plasma processing chamber to heat the inner wall surface to a second temperature higher than the first temperature, and product processing of controlling the power supply under a third condition in a state where the substrate is placed on the electrode to generate third plasma inside the plasma processing chamber to process the substrate.

公开(公告)号：US20240310827A1

公开(公告)日：2024-09-19

申请号：US18026201

申请日：2022-03-24

Applicant: Hitachi High-Tech Corporation

Inventor： Nanako Tamari ,  Masahiro Sumiya ,  Akira Kagoshima ,  Satoru Matsukura ,  Yuji Nagatani

IPC: G05B23/02 ,  G05B19/048 ,  H01L21/67

CPC classification number: G05B23/0283 ,  G05B19/048 ,  G05B23/024 ,  H01L21/67253 ,  G05B2219/45031

Abstract: An apparatus diagnostic system for diagnosing conditions of a semiconductor manufacturing apparatus includes an apparatus diagnostic apparatus that outputs soundness indicators by a first algorithm with sensor data collected from the semiconductor manufacturing apparatus as an input to the first algorithm, outputs threshold spatial data under normal conditions of the semiconductor manufacturing apparatus by a second algorithm with the soundness indicators as an input to the second algorithm, and diagnoses conditions of the semiconductor manufacturing apparatus by a third algorithm with the soundness indicators and the threshold spatial data as an input to the third algorithm. The soundness indicators are indicators concerning a degree of soundness of conditions of the semiconductor manufacturing apparatus.

公开(公告)号：US20220262606A1

公开(公告)日：2022-08-18

申请号：US17736214

申请日：2022-05-04

Applicant: Hitachi High-Tech Corporation

Inventor： Kosa Hirota ,  Masahiro Sumiya ,  Koichi Nakaune ,  Nanako Tamari ,  Satomi Inoue ,  Shigeru Nakamoto

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/66 ,  C23C16/44

Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate.
According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.

公开(公告)号：US11355324B2

公开(公告)日：2022-06-07

申请号：US16084095

申请日：2018-03-19

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Kosa Hirota ,  Masahiro Sumiya ,  Koichi Nakaune ,  Nanako Tamari ,  Satomi Inoue ,  Shigeru Nakamoto

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/66 ,  C23C16/44

Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate.
According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.