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    SUBSTRATE SURFACE CLEANING LIQUID MEDIUM AND CLEANING METHOD
    1.
    发明申请
    SUBSTRATE SURFACE CLEANING LIQUID MEDIUM AND CLEANING METHOD 审中-公开
    基板表面清洗液体和清洗方法

    公开(公告)号：US20070135322A1

    公开(公告)日：2007-06-14

    申请号：US11678912

    申请日：2007-02-26

    申请人： Hitoshi MORINAGA ,  Hideaki Mochizuki ,  Atsushi Itou

    发明人： Hitoshi MORINAGA ,  Hideaki Mochizuki ,  Atsushi Itou

    IPC分类号： C11D7/32

    CPC分类号： C11D3/044 ,  C11D1/72 ,  C11D3/3947 ,  C11D11/0047 ,  C11D11/007 ,  C23G1/18 ,  H01L21/02052

    摘要： A substrate surface cleaning liquid medium and a cleaning method using the cleaning liquid medium are capable of removing finely particulate contaminants more efficiently than conventional techniques from substrates for devices in the production of semiconductor devices, display devices, etc., which cleaning liquid medium contains the following ingredients (A), (B), (C), and (D), has a pH of 9 or higher, and a content of ingredient (C) of 0.01 to 4% by weight: (A) an ethylene oxide addition type surfactant which has an optionally substituted hydrocarbon group and a polyoxyethylene group in the same molecular structure and in which the ratio of the number of carbon atoms contained in the hydrocarbon group (m) to the number of oxyethylene groups in the polyoxyethylene group (n), m/n, is m/n≦1.5, (B) an alkali ingredient, (C) hydrogen peroxide, and (D) water.

    摘要翻译： 基板表面清洁液体介质和使用清洁液体介质的清洁方法能够比常规技术更有效地除去细颗粒污染物，从用于生产半导体器件，显示装置等的器件的衬底，清洁液体介质包含 以下成分（A），（B），（C）和（D）的pH为9以上，成分（C）的含量为0.01〜4重量％：（A） 具有相同分子结构的任选取代的烃基和聚氧乙烯基的烃类表面活性剂，其中烃基（m）中所含的碳原子数与聚氧乙烯基（n）中的氧化乙烯基的数量的比例， m / n为m / n <= 1.5，（B）碱成分，（C）过氧化氢和（D）水。

    Semiconductor cleaning composition comprising an ethoxylated surfactant
    2.
    发明授权
    Semiconductor cleaning composition comprising an ethoxylated surfactant 失效
    包含乙氧基化表面活性剂的半导体清洁组合物

    公开(公告)号：US07235516B2

    公开(公告)日：2007-06-26

    申请号：US10294658

    申请日：2002-11-15

    申请人： Hitoshi Morinaga ,  Hideaki Mochizuki ,  Atsushi Itou

    发明人： Hitoshi Morinaga ,  Hideaki Mochizuki ,  Atsushi Itou

    IPC分类号： C11D3/395 ,  C11D7/06 ,  C11D1/72

    CPC分类号： C11D3/044 ,  C11D1/72 ,  C11D3/3947 ,  C11D11/0047 ,  C11D11/007 ,  C23G1/18 ,  H01L21/02052

    摘要： A substrate surface cleaning liquid medium and a cleaning method using the cleaning liquid medium are capable of removing finely particulate contaminants more efficiently than conventional techniques from substrates for devices in the production of semiconductor devices, display devices, etc., which cleaning liquid medium contains the following ingredients (A), (B), (C), and (D), has a pH of 9 or higher, and a content of ingredient (C) of 0.01 to 4% by weight: (A) an ethylene oxide addition type surfactant which has an optionally substituted hydrocarbon group and a polyoxyethylene group in the same molecular structure and in which the ratio of the number of carbon atoms contained in the hydrocarbon group (m) to the number of oxyethylene groups in the polyoxyethylene group (n), m/n, is m/n≦1.5, (B) an alkali ingredient, (C) hydrogen peroxide, and (D) water.

    摘要翻译： 基板表面清洁液体介质和使用清洁液体介质的清洁方法能够比常规技术更有效地除去细颗粒污染物，从用于生产半导体器件，显示装置等的器件的衬底，清洁液体介质包含 以下成分（A），（B），（C）和（D）的pH为9以上，成分（C）的含量为0.01〜4重量％：（A） 具有相同分子结构的任选取代的烃基和聚氧乙烯基的烃类表面活性剂，其中烃基（m）中所含的碳原子数与聚氧乙烯基（n）中的氧化乙烯基的数量的比例， m / n为m / n <= 1.5，（B）碱成分，（C）过氧化氢和（D）水。

    REACTOR
    3.
    发明申请
    REACTOR 有权
    反应堆

    公开(公告)号：US20120092120A1

    公开(公告)日：2012-04-19

    申请号：US13259658

    申请日：2010-02-26

    申请人： Kouhei Yoshikawa ,  Masayuki Katou ,  Atsushi Itou ,  Shinichiro Yamamoto ,  Hajime Kawaguchi

    发明人： Kouhei Yoshikawa ,  Masayuki Katou ,  Atsushi Itou ,  Shinichiro Yamamoto ,  Hajime Kawaguchi

    IPC分类号： H01F27/28 ,  H01F27/24

    CPC分类号： H01F37/00 ,  H01F3/14 ,  H01F27/022 ,  H01F27/06 ,  H01F27/292 ,  H01F27/327 ,  H01F2017/046

    摘要： A compact reactor with excellent productivity and heat dissipation is provided. Reactor 1α includes a coil formed by spirally winding a wire 2w and a magnetic core 3 having an inside core portion inserted into the coil and an outside core portion 32 coupled to the inside core portion. These core portions form a closed magnetic circuit. The coil is covered with an inside resin portion 4 on the outer circumference thereof to form a coil molded unit 20α with its shape being held. The outer circumference of a combination unit 10 of the coil molded unit 20α and the magnetic core 3 is covered with an outside resin portion 5α. Reactor 1α does not have a case and is thus compact. A surface of the outside core portion 32 on the installation side (core installation surface 32d) is exposed form the outside resin portion 5α and is in direct contact with a fixed object, thereby achieving excellent heat dissipation. The provision of the coil molded unit 20α facilitates the handling of the coil during assembly of reactor 1α, thereby achieving good productivity.

    摘要翻译： 提供了具有优异的生产率和散热性的紧凑型反应堆。 反应器1α包括通过螺旋地卷绕线2w而形成的线圈和具有插入到线圈中的内芯部分的磁芯3和耦合到内芯部分的外芯部分32。 这些芯部形成封闭的磁路。 线圈在其外周被内部树脂部分4覆盖，以形成保持其形状的线圈模制单元20α。 线圈成型单元20α和磁芯3的组合单元10的外周被外侧树脂部5α覆盖。 反应器1α不具有壳体并且因此是紧凑的。 安装侧的外芯部32的表面（芯安装面32d）从外侧树脂部5α露出，与固定体直接接触，从而实现良好的散热。 设置线圈成型单元20α有助于在组装反应器1α期间处理线圈，从而实现良好的生产率。

    Cleaning solution for substrate for semiconductor device and process for producing substrate for semiconductor device
    4.
    发明授权
    Cleaning solution for substrate for semiconductor device and process for producing substrate for semiconductor device 有权
    半导体装置用基板用清洗液及半导体装置用基板的制造方法

    公开(公告)号：US08110534B2

    公开(公告)日：2012-02-07

    申请号：US12600545

    申请日：2008-05-16

    申请人： Yasuhiro Kawase ,  Makoto Ikemoto ,  Atsushi Itou ,  Makoto Ishikawa

    发明人： Yasuhiro Kawase ,  Makoto Ikemoto ,  Atsushi Itou ,  Makoto Ishikawa

    IPC分类号： C11D1/66

    CPC分类号： H01L21/0206 ,  C11D3/2075 ,  C11D11/0047 ,  H01L21/02074

    摘要： To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor.A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B): (A) an organic acid (B) a nonionic surfactant having an HLB value of from 5 to less than 13.

    摘要翻译： 为了提供一种用于半导体器件用基板的清洗液，其具有除去颗粒，有机污染物，金属污染物以及附着在基板表面上的有机物和金属的复合污染物的能力优异，从而基板表面可以是高度的 清洁，不被腐蚀。 特别是提供一种清洁液，该清洗溶液清洁低介电常数（Low-k）材料的能力优异，其中由于疏水性而容易排斥液体并且其中去除颗粒的能力差。 一种半导体器件用基板用清洗液，其特征在于，含有以下成分（A）和（B）：（A）有机酸（B）HLB值为5〜13以下的非离子性表面活性剂。

    PLASMA PROCESSING APPARATUS AND METHOD FOR DETECTING STATUS OF SAID APPARATUS
    5.
    发明申请
    PLASMA PROCESSING APPARATUS AND METHOD FOR DETECTING STATUS OF SAID APPARATUS 失效
    等离子体处理装置和检测装置状态的方法

    公开(公告)号：US20090105980A1

    公开(公告)日：2009-04-23

    申请号：US12025095

    申请日：2008-02-04

    申请人： Tsutomu TETSUKA ,  Naoshi Itabashi ,  Atsushi Itou

    发明人： Tsutomu TETSUKA ,  Naoshi Itabashi ,  Atsushi Itou

    IPC分类号： B05C11/00 ,  G06F19/00 ,  G01R23/16

    CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32935

    摘要： The invention provides a method for detecting and managing the status of a plasma processing apparatus with high sensitivity so as to enable long-term stable processing. In a plasma processing apparatus comprising a vacuum processing chamber 10, a plasma generating high frequency power supply 16, and a measurement device unit 3 for estimating the status of the apparatus via reflected waves 54 of the incident waves 53 reflected from the processing apparatus including a waveform generator 32, a VCO 33, a directional coupler 34, a detector 35 and a measurement data processing unit 36, frequency-swept high frequency waves 53 for measurement are introduced to the processing chamber where no plasma discharge is performed, so as to monitor the change of absorption spectrum frequency of the reflected waves 54 to thereby monitor the change in status of the processing apparatus.

    摘要翻译： 本发明提供了一种用于检测和管理具有高灵敏度的等离子体处理装置的状态以便能够进行长期稳定处理的方法。 在包括真空处理室10，等离子体产生高频电源16和测量装置单元3的等离子体处理装置中，用于通过从包括a的处理装置反射的入射波53的反射波54估计装置的状态 波形发生器32，VCO33，定向耦合器34，检测器35和测量数据处理单元36，将用于测量的频率扫描高频波53引入到不进行等离子体放电的处理室中，以便监视 反射波54的吸收光谱频率的变化，从而监视处理装置的状态变化。

    Vacuum processing operating method with wafers, substrates and/or semiconductors
    6.
    再颁专利
    Vacuum processing operating method with wafers, substrates and/or semiconductors 失效

    公开(公告)号：USRE39775E1

    公开(公告)日：2007-08-21

    申请号：US10066747

    申请日：2002-09-24

    申请人： Shigekazu Kato ,  Kouji Nishihata ,  Tsuenhiko Tsubone ,  Atsushi Itou

    发明人： Shigekazu Kato ,  Kouji Nishihata ,  Tsuenhiko Tsubone ,  Atsushi Itou

    IPC分类号： F26B5/04

    CPC分类号： H01L21/67748 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253

    摘要： This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

    Vacuum processing apparatus and operating method therefor
    10.
    发明授权
    Vacuum processing apparatus and operating method therefor 失效
    真空处理装置及其操作方法

    公开(公告)号：US06886272B2

    公开(公告)日：2005-05-03

    申请号：US10683067

    申请日：2003-10-14

    申请人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

    发明人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

    IPC分类号： B01J3/00 ,  B41J2/36 ,  B41J2/365 ,  C23C14/56 ,  H01L21/00 ,  H01L21/677 ,  F26B13/30

    CPC分类号： H01L21/67748 ,  B01J3/006 ,  B41J2/36 ,  B41J2/365 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253 ,  H01L21/67736 ,  Y10S134/902 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14

    摘要： This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

    摘要翻译： 本发明涉及一种具有真空处理室的真空处理装置，其内部必须是干式清洁的，以及一种操作这种装置的方法。 当真空处理室被干洗时，虚设基板通过基板传送装置从设置在空气气氛中的虚设基板存储装置与用于存储待处理基板的存储装置一起转移到真空处理室中， 通过产生等离子体对真空处理室进行干洗。 在完成干洗之后，虚拟衬底返回到虚设衬底存储装置。 因此，仅用于清洁目的的特定机构是不必要的，并且可以使装置的结构简单。 此外，用于干洗的虚拟基板和待加工的基板不共存，可以防止由于灰尘和剩余气体而被处理的基板的污染，并且生产率可以高。