Cam mechanism for lens barrel
    1.
    发明授权
    Cam mechanism for lens barrel 失效
    镜筒的凸轮机构

    公开(公告)号:US06906871B2

    公开(公告)日:2005-06-14

    申请号:US10731474

    申请日:2003-12-10

    IPC分类号: G02B7/04 G02B7/10 G02B15/14

    CPC分类号: G02B15/14 G02B7/102

    摘要: A cam mechanism for a lens barrel includes an annular member which is linearly guided along an optical axis, and having a cam follower on an outer peripheral surface; a cam ring having a cam groove on an inner peripheral surface including a photographing section and an accommodation section, the cam follower being engaged in the cam groove; and a biasing device for biasing the annular member forward to normally press the cam follower against a front cam surface in the cam groove. A rear end portion of the cam groove is open at a rear end surface of the cam ring to serve as the accommodation section, and the cam follower is disengageable from the front cam surface in the cam groove against a biasing force of the biasing device when the cam follower is engaged in the accommodation section.

    摘要翻译: 用于透镜镜筒的凸轮机构包括沿着光轴线性地引导并且在外周面上具有凸轮从动件的环形构件; 凸轮环,其在包括拍摄部分和收纳部分的内周表面上具有凸轮槽,所述凸轮从动件接合在所述凸轮槽中; 以及偏置装置,用于向前偏压环形构件,以正常地将凸轮从动件抵靠在凸轮槽中的前凸轮表面。 所述凸轮槽的后端部在所述凸轮环的后端面开口,以作为所述容纳部,并且所述凸轮从动件抵抗所述偏置装置的偏置力而与所述凸轮槽的前凸轮面脱离接触, 凸轮从动件接合在容纳部中。

    Step-zoom lens
    2.
    发明授权
    Step-zoom lens 失效
    分步变焦镜头

    公开(公告)号:US06940658B2

    公开(公告)日:2005-09-06

    申请号:US10731473

    申请日:2003-12-10

    CPC分类号: G02B7/021 G02B7/10

    摘要: A step-zoom lens includes two movable lens groups; a lens group support unit; and a cam ring having a cam groove. The cam groove includes a finite number of focal-length steps, so as to perform a focusing operation between infinite and closest photographing positions at each focal-length step. The cam groove includes a wide-angle mode section, a telephoto mode section, and a mode switching section. The closest photographing positions in two adjacent focal-length steps and the infinite photographing positions in two adjacent focal-length steps are adjacent to each other, respectively. One focal-length step of the infinite photographing position at a longest focal length in the wide-angle mode section is provided at one end of the mode switching section, and another focal-length step of the infinite photographing position at a shortest focal length in the telephoto mode section is provided at the other end.

    摘要翻译: 步进变焦镜头包括两个可移动透镜组; 镜头组支持单元; 以及具有凸轮槽的凸轮环。 凸轮槽包括有限数量的焦距步长,以便在每个焦距步长处在无限和最近拍摄位置之间进行聚焦操作。 凸轮槽包括广角模式部分,长焦模式部分和模式切换部分。 两个相邻焦距步长中最接近的拍摄位置和两个相邻焦距步长中的无限拍摄位置分别相邻。 在模式切换部分的一端设置广角模式部分中最长焦距处的无限拍摄位置的一个焦距步长,并且在最短焦距处的无限拍摄位置的另一焦距步长 在另一端设置长焦模式部分。

    Lens distance-varying mechanism, and step-zoom lens incorporating the same
    3.
    发明授权
    Lens distance-varying mechanism, and step-zoom lens incorporating the same 失效
    镜头距离变化机构,以及包括其的步进变焦镜头

    公开(公告)号:US06839187B2

    公开(公告)日:2005-01-04

    申请号:US10731475

    申请日:2003-12-10

    IPC分类号: G02B7/10 G02B15/14

    CPC分类号: G02B7/102 G02B15/14

    摘要: A lens distance-varying mechanism for varying a distance between first and second lens groups includes a first lens frame; a second lens frame rotatable relative to the first lens frame; a relative-moving mechanism for moving the first and second lens frames to change a relative position therebetween on an optical axis when the second lens frame is positioned at each of forward and reverse rotation extremities thereof relative to the first lens frame; a differential linking ring which rotates together with the second lens frame; a differential ring which is rotated relative to the differential linking ring by a first angle of rotation greater than a second angle of rotation of the second lens frame relative to the first lens frame; and a biasing member, positioned between the differential ring and the differential linking ring, for absorbing a difference between the first and second angles of rotation.

    Semiconductor device having boosting circuit
    5.
    发明授权
    Semiconductor device having boosting circuit 失效
    具有升压电路的半导体装置

    公开(公告)号:US08633758B2

    公开(公告)日:2014-01-21

    申请号:US13064237

    申请日:2011-03-11

    IPC分类号: G05F1/10 G05F3/02

    摘要: A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit.

    摘要翻译: 一种半导体器件包括:升压电路,其根据外部电源电压升压升压范围内的内部电源电压;将外部电源电压与规定的基准电压进行比较的外部电压电平比较电路;以及可变电阻器 电路包括连接到升压电路的输出端子的可变电阻器。 可变电阻电路基于外部电压电平比较电路的比较结果来控制可变电阻器的电阻值。

    Supply voltage generating circuit

    公开(公告)号:US08493132B2

    公开(公告)日:2013-07-23

    申请号:US12052422

    申请日:2008-03-20

    IPC分类号: G05F1/10

    摘要: A supply voltage generating circuit that enables a reduction in chip area includes: a booster for outputting a boosted voltage upon generating the boosted voltage by charge pumping of a capacitor element; a power-supply step-down unit for stepping down voltage of an external power supply to a voltage within a breakdown-voltage range of the capacitor element, and applying the stepped-down voltage to the power supply of the booster; and a switch element for switching between application of the external power supply to the power supply of the booster directly or via the power-supply step-down unit. The booster comprises multiple stages of booster circuits. The thicknesses of gate oxide films of capacitor elements constituted by MOS transistors included in respective ones of the booster circuits are the same and are made smaller than the thickness of a gate oxide film of a MOS transistor included in a load circuit having the output of the booster at its power supply.

    Varistor and method for manufacturing varistor
    8.
    发明授权
    Varistor and method for manufacturing varistor 有权
    压敏电阻及其制造方法

    公开(公告)号:US08471673B2

    公开(公告)日:2013-06-25

    申请号:US13545505

    申请日:2012-07-10

    IPC分类号: H01C7/10

    摘要: A varistor is provided with a varistor element body, a plurality of internal electrodes arranged in the varistor element body so as to sandwich a partial region of the varistor element body between them, and a plurality of external electrodes arranged on the surface of the varistor element body and connected to the corresponding internal electrodes. The external electrode has a sintered electrode layer formed by attaching an electroconductive paste containing an alkali metal to the surface of the varistor element body and sintering it. The varistor element body has a high-resistance region formed by diffusing the alkali metal in the electroconductive paste into the varistor element body from an interface between the surface of the varistor element body and the sintered electrode layer.

    摘要翻译: 变阻器设置有可变电阻元件主体,多个内部电极,布置在可变电阻元件主体中,以将可变电阻元件主体的局部区域夹在它们之间;以及多个外部电极,布置在可变电阻元件的表面上 并连接到相应的内部电极。 外部电极具有烧结电极层,该烧结电极层通过将含有碱金属的导电膏附着到可变电阻元件体的表面并烧结而形成。 可变电阻元件体具有通过将可变电阻元件体的表面与烧结电极层之间的界面将导电浆中的碱金属扩散到可变电阻元件体中而形成的高电阻区域。

    SEMICONDUCTOR DEVICE THAT CAN ADJUST SUBSTRATE VOLTAGE
    9.
    发明申请
    SEMICONDUCTOR DEVICE THAT CAN ADJUST SUBSTRATE VOLTAGE 有权
    可调节基极电压的半导体器件

    公开(公告)号:US20100164607A1

    公开(公告)日:2010-07-01

    申请号:US12647259

    申请日:2009-12-24

    IPC分类号: G05F1/10

    CPC分类号: G05F3/205 G05F1/46

    摘要: To provide a semiconductor device including: a MOS transistor formed in a semiconductor substrate and have a threshold voltage to be adjusted, a replica transistor of the MOS transistor, a monitoring circuit monitors a gate/source voltage needed when the replica transistor flows a current having a given designed value, a negative voltage pumping circuit generates a substrate voltage of the MOS transistor, based on an output from the monitoring circuit, and a limiting circuit defines the operation of the negative voltage pumping circuit, regardless of a monitoring result of the monitoring circuit, in response to an excess of the substrate voltage with respect to a predetermined value.

    摘要翻译: 为了提供一种半导体器件,包括:形成在半导体衬底中并具有要调节的阈值电压的MOS晶体管,MOS晶体管的复制晶体管,监视电路监视当复制晶体管流过具有 给定的设计值,负电压泵浦电路基于监控电路的输出产生MOS晶体管的衬底电压,并且限制电路定义负电压抽运电路的操作,而不管监视的监视结果如何 电路,响应于相对于预定值的衬底电压的过量。

    Automatic transmission
    10.
    发明授权
    Automatic transmission 有权
    自动变速器

    公开(公告)号:US07712395B2

    公开(公告)日:2010-05-11

    申请号:US11225202

    申请日:2005-09-14

    IPC分类号: F16H57/02

    摘要: An automatic transmission includes a pressure adjusting unit that controls hydraulic pressure supplied to a transmission mechanism by the operation of a solenoid valve. A housing has a heat radiating portion for radiating heat to the outside and houses the pressure adjusting unit. A first connector is so arranged as to pass through the housing and has a control circuit unit electrically connected to the solenoid valve of the pressure adjusting unit. A second connector is electrically connected to an engine control unit outside the housing and engages with the first connector and the heat radiating portion. The second connector is electrically connected to the control circuit unit and presses the first connector onto the heat radiating portion.

    摘要翻译: 自动变速器包括压力调节单元,其通过电磁阀的操作来控制供给变速机构的液压。 壳体具有用于将热量散发到外部并容纳压力调节单元的散热部分。 第一连接器布置成穿过壳体并具有电连接到压力调节单元的电磁阀的控制电路单元。 第二连接器电连接到壳体外部的发动机控制单元,并与第一连接器和散热部分接合。 第二连接器电连接到控制电路单元并将第一连接器按压到散热部分上。