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1.发明申请Semiconductor Devices and Methods for Changing Operating Characteristics and Semiconductor Systems Including the Same 有权用于改变工作特性的半导体器件和方法及包括其的半导体系统公开(公告)号：US20100214862A1
公开(公告)日：2010-08-26
申请号：US12706756
申请日：2010-02-17
申请人： Ho Jung Kim , Chul Woo Park , Sang Beom Kang , Hyun Ho Choi , Jung Min Lee , Seung Eon Ahn
发明人： Ho Jung Kim , Chul Woo Park , Sang Beom Kang , Hyun Ho Choi , Jung Min Lee , Seung Eon Ahn
CPC分类号： G11C5/14 , G11C5/147 , G11C7/22 , G11C8/08 , G11C8/10 , G11C16/04 , G11C16/20 , G11C29/02 , G11C29/021 , G11C29/023 , G11C29/028 , G11C2029/4402 , G11C2207/2254
摘要： A method of changing a parameter in a semiconductor device is provided. The method includes receiving and storing data in a storage region; and changing at least one between a DC characteristic and an AC timing characteristic of a parameter, used to access a non-volatile memory cell included in a memory core of the semiconductor device, according to the data stored in the storage.
摘要翻译： 提供了一种改变半导体器件中的参数的方法。 该方法包括在存储区域中接收和存储数据; 以及根据存储在存储器中的数据，在用于访问包括在半导体器件的存储器核心中的非易失性存储单元的参数的DC特性和AC定时特性之间改变至少一个。
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2.发明申请Memory device, memory system having the same, and programming method of a memory cell 有权存储器件，具有相同的存储器系统以及存储器单元的编程方法公开(公告)号：US20100027326A1
公开(公告)日：2010-02-04
申请号：US12461036
申请日：2009-07-30
申请人： Ho Jung Kim , Chul Woo Park , Sang Beom Kang , Hyun Ho Choi , Seung Eon Ahn
发明人： Ho Jung Kim , Chul Woo Park , Sang Beom Kang , Hyun Ho Choi , Seung Eon Ahn
CPC分类号： G11C11/56 , G11C8/06 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/0064 , G11C13/0069 , G11C2013/009 , G11C2013/0092
摘要： A method of writing multi-bit data to a semiconductor memory device with memory cells storing data defined by a threshold value, the method comprising, for each memory cell, writing a least significant bit, verifying completion of writing the least significant bit, verifying including comparing a written value to one of a low least significant bit verification value and a high least significant bit verification value, and writing a next significant bit upon completion of writing the least significant bit.
摘要翻译： 一种将多位数据写入半导体存储器件的方法，其中存储单元存储由阈值定义的数据，该方法包括针对每个存储器单元写入最低有效位，验证写入最低有效位的完成，验证包括 将写入值与低最低有效位验证值和高最低有效位验证值之一进行比较，以及在完成写入最低有效位时写入下一个有效位。
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3.发明授权Semiconductor devices and methods for changing operating characteristics and semiconductor systems including the same 有权用于改变工作特性的半导体器件和方法以及包括其的半导体系统公开(公告)号：US08369173B2
公开(公告)日：2013-02-05
申请号：US12706756
申请日：2010-02-17
申请人： Ho Jung Kim , Chul Woo Park , Sang Beom Kang , Hyun Ho Choi , Jung Min Lee , Seung Eon Ahn
发明人： Ho Jung Kim , Chul Woo Park , Sang Beom Kang , Hyun Ho Choi , Jung Min Lee , Seung Eon Ahn
IPC分类号： G11C7/00
CPC分类号： G11C5/14 , G11C5/147 , G11C7/22 , G11C8/08 , G11C8/10 , G11C16/04 , G11C16/20 , G11C29/02 , G11C29/021 , G11C29/023 , G11C29/028 , G11C2029/4402 , G11C2207/2254
摘要： A method of changing a parameter in a semiconductor device is provided. The method includes receiving and storing data in a storage region; and changing at least one between a DC characteristic and an AC timing characteristic of a parameter, used to access a non-volatile memory cell included in a memory core of the semiconductor device, according to the data stored in the storage.
摘要翻译： 提供了一种改变半导体器件中的参数的方法。 该方法包括在存储区域中接收和存储数据; 以及根据存储在存储器中的数据，在用于访问包括在半导体器件的存储器核心中的非易失性存储单元的参数的DC特性和AC定时特性之间改变至少一个。
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4.发明授权Memory device, memory system having the same, and programming method of a memory cell 有权存储器件，具有相同的存储器系统以及存储器单元的编程方法公开(公告)号：US08031517B2
公开(公告)日：2011-10-04
申请号：US12461036
申请日：2009-07-30
申请人： Ho Jung Kim , Chul Woo Park , Sang Beom Kang , Hyun Ho Choi , Seung Eon Ahn
发明人： Ho Jung Kim , Chul Woo Park , Sang Beom Kang , Hyun Ho Choi , Seung Eon Ahn
IPC分类号： G11C11/00
CPC分类号： G11C11/56 , G11C8/06 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/0064 , G11C13/0069 , G11C2013/009 , G11C2013/0092
摘要： A method of writing multi-bit data to a semiconductor memory device with memory cells storing data defined by a threshold value, the method comprising, for each memory cell, writing a least significant bit, verifying completion of writing the least significant bit, verifying including comparing a written value to one of a low least significant bit verification value and a high least significant bit verification value, and writing a next significant bit upon completion of writing the least significant bit.
摘要翻译： 一种将多位数据写入半导体存储器件的方法，其中存储单元存储由阈值定义的数据，该方法包括针对每个存储器单元写入最低有效位，验证写入最低有效位的完成，验证包括 将写入值与低最低有效位验证值和高最低有效位验证值之一进行比较，以及在完成写入最低有效位时写入下一个有效位。
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