公开(公告)号：US20120218486A1

公开(公告)日：2012-08-30

申请号：US13468583

申请日：2012-05-10

申请人： Hong-Woo Lee ,  Jong-Oh Kim ,  Sung-Man Kim ,  Sun-Kyu Joo ,  Bong-Jun Lee ,  Jae-Min Shin

发明人： Hong-Woo Lee ,  Jong-Oh Kim ,  Sung-Man Kim ,  Sun-Kyu Joo ,  Bong-Jun Lee ,  Jae-Min Shin

IPC分类号： G02F1/136

CPC分类号： G02F1/136213

摘要： A display substrate includes a first switching element, a second switching element, a first pixel electrode, a second pixel electrode, a main storage electrode and a sub-storage electrode. The first switching element is connected to a data line and a first gate line. The second switching element is connected to the data line and a second gate line adjacent to the first gate line. The first pixel electrode is electrically connected to the first switching element. The second pixel electrode is electrically connected to the second switching element. The main storage electrode is disposed in an area between the first pixel electrode and the second electrode to overlap with first ends of the first and second pixel electrodes. The sub-storage electrode is spaced apart from the first and second gate lines.

摘要翻译： 显示基板包括第一开关元件，第二开关元件，第一像素电极，第二像素电极，主存储电极和副存储电极。 第一开关元件连接到数据线和第一栅极线。 第二开关元件连接到数据线和与第一栅极线相邻的第二栅极线。 第一像素电极电连接到第一开关元件。 第二像素电极电连接到第二开关元件。 主存储电极设置在第一像素电极和第二电极之间的区域中，以与第一和第二像素电极的第一端重叠。 副存储电极与第一和第二栅极线间隔开。

公开(公告)号：US20090190082A1

公开(公告)日：2009-07-30

申请号：US12181678

申请日：2008-07-29

申请人： Hong-Woo Lee ,  Jong-Oh Kim ,  Sung-Man Kim ,  Sun-Kyu Joo ,  Bong-Jun Lee ,  Jae-Min Shin

发明人： Hong-Woo Lee ,  Jong-Oh Kim ,  Sung-Man Kim ,  Sun-Kyu Joo ,  Bong-Jun Lee ,  Jae-Min Shin

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213

摘要： A display substrate includes a first switching element, a second switching element, a first pixel electrode, a second pixel electrode, a main storage electrode and a sub-storage electrode. The first switching element is connected to a data line and a first gate line. The second switching element is connected to the data line and a second gate line adjacent to the first gate line. The first pixel electrode is electrically connected to the first switching element. The second pixel electrode is electrically connected to the second switching element. The main storage electrode is disposed in an area between the first pixel electrode and the second electrode to overlap with first ends of the first and second pixel electrodes. The sub-storage electrode is spaced apart from the first and second gate lines.

摘要翻译： 显示基板包括第一开关元件，第二开关元件，第一像素电极，第二像素电极，主存储电极和副存储电极。 第一开关元件连接到数据线和第一栅极线。 第二开关元件连接到数据线和与第一栅极线相邻的第二栅极线。 第一像素电极电连接到第一开关元件。 第二像素电极电连接到第二开关元件。 主存储电极设置在第一像素电极和第二电极之间的区域中，以与第一和第二像素电极的第一端重叠。 副存储电极与第一和第二栅极线间隔开。

公开(公告)号：US08384870B2

公开(公告)日：2013-02-26

申请号：US13468583

申请日：2012-05-10

申请人： Hong-Woo Lee ,  Jong-Oh Kim ,  Sung-Man Kim ,  Sun-Kyu Joo ,  Bong-Jun Lee ,  Jae-Min Shin

发明人： Hong-Woo Lee ,  Jong-Oh Kim ,  Sung-Man Kim ,  Sun-Kyu Joo ,  Bong-Jun Lee ,  Jae-Min Shin

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213

摘要： A display substrate includes a first switching element, a second switching element, a first pixel electrode, a second pixel electrode, a main storage electrode and a sub-storage electrode. The first switching element is connected to a data line and a first gate line. The second switching element is connected to the data line and a second gate line adjacent to the first gate line. The first pixel electrode is electrically connected to the first switching element. The second pixel electrode is electrically connected to the second switching element. The main storage electrode is disposed in an area between the first pixel electrode and the second electrode to overlap with first ends of the first and second pixel electrodes. The sub-storage electrode is spaced apart from the first and second gate lines.

摘要翻译： 显示基板包括第一开关元件，第二开关元件，第一像素电极，第二像素电极，主存储电极和副存储电极。 第一开关元件连接到数据线和第一栅极线。 第二开关元件连接到数据线和与第一栅极线相邻的第二栅极线。 第一像素电极电连接到第一开关元件。 第二像素电极电连接到第二开关元件。 主存储电极设置在第一像素电极和第二电极之间的区域中，以与第一和第二像素电极的第一端重叠。 副存储电极与第一和第二栅极线间隔开。

公开(公告)号：US08203682B2

公开(公告)日：2012-06-19

申请号：US12181678

申请日：2008-07-29

申请人： Hong-Woo Lee ,  Jong-Oh Kim ,  Sung-Man Kim ,  Sun-Kyu Joo ,  Bong-Jun Lee ,  Jae-Min Shin

发明人： Hong-Woo Lee ,  Jong-Oh Kim ,  Sung-Man Kim ,  Sun-Kyu Joo ,  Bong-Jun Lee ,  Jae-Min Shin

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213

摘要： A display substrate includes a first switching element, a second switching element, a first pixel electrode, a second pixel electrode, a main storage electrode and a sub-storage electrode. The first switching element is connected to a data line and a first gate line. The second switching element is connected to the data line and a second gate line adjacent to the first gate line. The first pixel electrode is electrically connected to the first switching element. The second pixel electrode is electrically connected to the second switching element. The main storage electrode is disposed in an area between the first pixel electrode and the second electrode to overlap with first ends of the first and second pixel electrodes. The sub-storage electrode is spaced apart from the first and second gate lines.

摘要翻译： 显示基板包括第一开关元件，第二开关元件，第一像素电极，第二像素电极，主存储电极和副存储电极。 第一开关元件连接到数据线和第一栅极线。 第二开关元件连接到数据线和与第一栅极线相邻的第二栅极线。 第一像素电极电连接到第一开关元件。 第二像素电极电连接到第二开关元件。 主存储电极设置在第一像素电极和第二电极之间的区域中，以与第一和第二像素电极的第一端重叠。 副存储电极与第一和第二栅极线间隔开。

公开(公告)号：US07777214B2

公开(公告)日：2010-08-17

申请号：US12321670

申请日：2009-01-23

申请人： Jae-Min Shin ,  Jong-Woo Ko

发明人： Jae-Min Shin ,  Jong-Woo Ko

IPC分类号： H01L29/02

CPC分类号： H01L45/148 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/16

摘要： A phase change memory device and a method of forming the same include a conductive pattern formed on a substrate. A lower electrode contact is disposed on the conductive pattern. The phase change pattern is disposed on the lower electrode contact. An upper electrode is disposed on the phase change pattern. An area of an upper surface of the lower electrode contact is smaller than an area of a lower surface of the lower electrode contact.

摘要翻译： 相变存储器件及其形成方法包括形成在衬底上的导电图案。 下电极接触件设置在导电图案上。 相变图案设置在下电极接触件上。 上电极设置在相变图案上。 下电极接触部的上表面的面积小于下电极接触面的下表面的面积。

公开(公告)号：US20100121791A1

公开(公告)日：2010-05-13

申请号：US12513279

申请日：2007-05-28

申请人： Sang-Kee Kang ,  Min-Kyung Kim ,  Min-Kook Kim ,  Jun-Hyoung Kim ,  Jae-Min Shin ,  Cheol-Heui Yun ,  Ho-Kyoung Rhee ,  Dong-Hyun Jung ,  Eun-Kyoung Jung ,  Seung-Hoon Choi ,  Yun-Jaie Choi ,  Jin-Huk Choi

发明人： Sang-Kee Kang ,  Min-Kyung Kim ,  Min-Kook Kim ,  Jun-Hyoung Kim ,  Jae-Min Shin ,  Cheol-Heui Yun ,  Ho-Kyoung Rhee ,  Dong-Hyun Jung ,  Eun-Kyoung Jung ,  Seung-Hoon Choi ,  Yun-Jaie Choi ,  Jin-Huk Choi

IPC分类号： G06F15/18 ,  G06F17/10 ,  G06G7/60

CPC分类号： G16B15/00 ,  G16B40/00

摘要： The present invention relates to the system, method and program for the pharmacokinetic parameter prediction of peptide sequence by the mathematical model.The present invention is comprising the steps of acquiring a variety of peptide sequence having specific features by the experimental technique; acquiring, on the basis of the sequence, a variety of peptide sequences lacking the specific features; storing the acquired peptide sequences as each set respectively, followed by randomly extracting peptide sequences in the constant ratio to divide into a training set and a test set of mathematical model; allowing individual peptide sequence descriptor values and an activity value; training the set of training peptide by mathematical model; predicting pharmacokinetic parameter of the set of test peptide by the trained mathematical model; and validating the trained mathematical model. The present invention is useful because the pharmacokinetic parameter of peptide sequence, which are necessary for oral drug delivery, can be predicted in advance by not an experiment, but the program-storage medium, and cost and time can be reduced compared to an experiment as a result.

摘要翻译： 本发明涉及通过数学模型对肽序列的药代动力学参数预测的系统，方法和程序。 本发明包括通过实验技术获得具有特定特征的各种肽序列的步骤; 在序列的基础上获得缺乏特定特征的多种肽序列; 分别存储获得的肽序列，然后以恒定比例随机提取肽序列，以分成训练集和数学模型的测试集合; 允许单个肽序列描述符值和活性值; 通过数学模型训练一套训练肽; 通过训练数学模型预测该组测试肽的药代动力学参数; 并验证训练有素的数学模型。 本发明是有用的，因为口服药物递送所必需的肽序列的药代动力学参数可以通过实验预先预测，但与实验相比可以减少程序储存培养基，并且可以降低成本和时间 结果。

公开(公告)号：US09171956B2

公开(公告)日：2015-10-27

申请号：US13072625

申请日：2011-03-25

申请人： Jae-Min Shin ,  Ji-Yong Park ,  Kyung-Min Park

发明人： Jae-Min Shin ,  Ji-Yong Park ,  Kyung-Min Park

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L29/78621 ,  H01L27/1285 ,  H01L29/78696

摘要： In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the channel region; a source electrode contacting the source region; and a drain electrode contacting the drain region. The channel region includes a main channel portion, a source channel portion, and a drain channel portion, and the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other. The light-doped source region is disposed between the source channel portion and the source region and the light-doped drain region is disposed between the drain channel portion and the drain region.

摘要翻译： 在薄膜晶体管和具有该薄膜晶体管的显示装置中，根据示例性实施例的薄膜晶体管包括：半导体层，包括沟道区，源极区，漏极区，光掺杂源极区和 光掺杂漏区; 栅电极与沟道区重叠; 源极接触源区; 漏极与漏区接触。 沟道区域包括主沟道部分，源极沟道部分和漏极沟道部分，并且源极沟道部分和漏极沟道部分从主沟道部分延伸并彼此分离。 光掺杂源极区域设置在源极沟道部分和源极区域之间，并且掺杂漏极区域设置在漏极沟道部分和漏极区域之间。

公开(公告)号：US20090189141A1

公开(公告)日：2009-07-30

申请号：US12321670

申请日：2009-01-23

申请人： Jae-Min Shin ,  Jong-Woo Ko

发明人： Jae-Min Shin ,  Jong-Woo Ko

IPC分类号： H01L45/00

CPC分类号： H01L45/148 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/16

摘要： A phase change memory device and a method of forming the same include a conductive pattern formed on a substrate. A lower electrode contact is disposed on the conductive pattern. The phase change pattern is disposed on the lower electrode contact. An upper electrode is disposed on the phase change pattern. An area of an upper surface of the lower electrode contact is smaller than an area of a lower surface of the lower electrode contact.

摘要翻译： 相变存储器件及其形成方法包括形成在衬底上的导电图案。 下电极接触件设置在导电图案上。 相变图案设置在下电极接触件上。 上电极设置在相变图案上。 下电极接触部的上表面的面积小于下电极接触面的下表面的面积。

公开(公告)号：US09685107B2

公开(公告)日：2017-06-20

申请号：US13200987

申请日：2011-10-06

申请人： Gyung-Soon Park ,  Sung-Ho Cho ,  Seung-Jae Lee ,  Jae-Min Shin

发明人： Gyung-Soon Park ,  Sung-Ho Cho ,  Seung-Jae Lee ,  Jae-Min Shin

IPC分类号： G09G3/36 ,  G09G3/20 ,  G02F1/1333 ,  G02F1/1335

CPC分类号： G09G3/2003 ,  G02F1/133371 ,  G02F1/133514 ,  G02F2201/52 ,  G09G2300/0452 ,  G09G2340/06

摘要： A display apparatus includes a first substrate and a second substrate opposite to the first substrate. The first substrate includes a plurality of color pixels and a white pixel that outputs a second white light having a same gray scale as a first white light formed by mixing light outputted from the plurality of color pixel. The white pixel is activated by a second current that is lower than a first current that activates the color pixels.

公开(公告)号：US20120097965A1

公开(公告)日：2012-04-26

申请号：US13072625

申请日：2011-03-25

申请人： Jae-Min Shin ,  Ji-Yong Park ,  Kyung-Min Park

发明人： Jae-Min Shin ,  Ji-Yong Park ,  Kyung-Min Park

IPC分类号： H01L29/786

CPC分类号： H01L29/78621 ,  H01L27/1285 ,  H01L29/78696

摘要： In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the channel region; a source electrode contacting the source region; and a drain electrode contacting the drain region. The channel region includes a main channel portion, a source channel portion, and a drain channel portion, and the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other. The light-doped source region is disposed between the source channel portion and the source region and the light-doped drain region is disposed between the drain channel portion and the drain region.

摘要翻译： 在薄膜晶体管和具有该薄膜晶体管的显示装置中，根据示例性实施例的薄膜晶体管包括：半导体层，包括沟道区，源极区，漏极区，光掺杂源极区和 光掺杂漏区; 栅电极与沟道区重叠; 源极接触源区; 漏极与漏区接触。 沟道区域包括主沟道部分，源极沟道部分和漏极沟道部分，并且源极沟道部分和漏极沟道部分从主沟道部分延伸并彼此分离。 光掺杂源极区域设置在源极沟道部分和源极区域之间，并且掺杂漏极区域设置在漏极沟道部分和漏极区域之间。