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公开(公告)号：US08425719B2
公开(公告)日：2013-04-23
申请号：US12852727
申请日：2010-08-09
Applicant: Hongseub Kim
Inventor： Hongseub Kim
IPC: C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC classification number: H01J37/321 , H01J37/32091 , H01J37/3211 , H01J37/3244 , H01J37/32697 , H01J37/32715
Abstract: A plasma generating apparatus is provided. The plasma generating apparatus may include a vacuum chamber, an ElectroStatic Chuck (ESC), a first antenna part including a first antenna and a first antenna cover, and a second antenna part including a second antenna and a second antenna cover. The vacuum chamber has a vacant interior and a top sealed by an insulation vacuum plate. The ESC is disposed at a center of the inside of the vacuum chamber. The first antenna is coupled to a through-hole of the second antenna. The first antenna cover airtightly covers a top of the first antenna. The second antenna is coupled to the through-hole of the insulation vacuum plate. The second antenna cover airtightly covers a top of the first antenna part and the second antenna.
Abstract translation: 提供了一种等离子体产生装置。 等离子体发生装置可以包括真空室，静电卡盘（ESC），包括第一天线和第一天线盖的第一天线部分和包括第二天线和第二天线盖的第二天线部分。 真空室具有空的内部和由绝缘真空板密封的顶部。 ESC设置在真空室内部的中心。 第一天线耦合到第二天线的通孔。 第一个天线罩气密地覆盖第一个天线的顶部。 第二天线耦合到绝缘真空板的通孔。 第二天线罩气密地覆盖第一天线部分和第二天线的顶部。
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公开(公告)号：US08264153B2
公开(公告)日：2012-09-11
申请号：US12852804
申请日：2010-08-09
Applicant: Hongseub Kim
Inventor： Hongseub Kim
CPC classification number: H05H1/46 , H01J37/32091 , H01J37/32183 , H05H2001/4682
Abstract: A plasma source for a substrate is provided. The plasma source may include a source electrode and an impedance box. The source electrode receives a source Radio Frequency (RF) from the external and generates plasma based on capacitive coupling within a vacuum chamber. The impedance box connects at one end to an outer circumference surface of the source electrode, and is grounded at the other end to the vacuum chamber, and controls an electric current flowing from the source electrode to the vacuum chamber by the source RF.
Abstract translation: 提供了一种用于衬底的等离子体源。 等离子体源可以包括源电极和阻抗盒。 源电极从外部接收源射频（RF），并根据真空室内的电容耦合产生等离子体。 阻抗箱的一端与源电极的外周面连接，另一端与真空室接地，通过源RF控制从源电极流向真空室的电流。
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公开(公告)号：US08604697B2
公开(公告)日：2013-12-10
申请号：US12941234
申请日：2010-11-08
Applicant: Hongseub Kim
Inventor： Hongseub Kim
CPC classification number: H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32174 , H01J37/32577
Abstract: An apparatus for generating plasma is provided. The apparatus may include a vacuum chamber and a plasma source part. The plasma source part may include a dielectric part, an upper electrode, and an inductive coil. The dielectric part may be installed to protrude upward along a circumference of a through-hole provided at a top of the vacuum chamber. The upper electrode may be coupled to seal an opened top of the dielectric part. The inductive coil may spirally extend along an outer circumference surface of the dielectric part.
Abstract translation: 提供了一种用于产生等离子体的装置。 该装置可以包括真空室和等离子体源部分。 等离子体源部分可以包括电介质部分，上电极和感应线圈。 电介质部件可以安装成沿着设置在真空室顶部的通孔的圆周向上突出。 上电极可以联接以密封电介质部分的开口顶部。 感应线圈可以沿着电介质部分的外周表面螺旋地延伸。
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