摘要:
A compensation system for calibrating an amplifier having a compensation input including a sigma delta converter, a counter, a memory, adjust logic, a DAC, a pair of compensation capacitors, and a pair of current to voltage (I/V) converters. The converter converts an offset voltage to a bit stream. The counter stores a sum value indicative of the output offset. The memory stores a digital bias value. The adjust logic determines an adjust value based on the sum value and adjusts the stored digital bias value based on the adjust value. The DAC converts the digital bias value to a differential bias current. The compensation capacitors apply a compensation voltage to a compensation input of the amplifier. The I/V converters charge the compensation capacitors using the differential bias current. The adjust logic may use upper and lower thresholds and adjust the digital bias value by one LSB for each compensation cycle.
摘要:
A calibration system and method for a resistor ladder that employs relative measurement and adjustment between pairs of resistors. The system includes a resistor tree of complementary pairs of programmable resistors coupled to the resistor ladder, a measurement circuit that measures voltage differences between complementary pairs of programmable resistors, and control logic. The control logic controls the measurement circuit to measure a voltage difference between each complementary pair of programmable resistors and adjusts the relative resistance of each complementary pair of programmable resistors to equalize voltage. The measurement is facilitated by a sigma-delta ADC that converts a measured voltage difference into a bit stream. The programmable resistors are implemented with binary weighted resistors that are digitally adjusted one LSB at a time. Lower and upper adjustment thresholds may be employed to avoid unnecessary over-adjustments while maintaining a requisite level of accuracy.
摘要:
A multistage ADC that subranges and interpolates, and that amplifies selected subranges to convert an analog signal to a stream of digital values. The ADC samples the analog signal and provides a stream of sample signals. A first stage flash converts each sample signal into a first multiple bit value and subranges a reference ladder according to the first multiple bit value into selected reference signals. Each additional secondary stage amplifies a selected subrange of signals from a prior stage, flash converts the amplified residual signals to provide an additional multiple bit value, interpolates each set of amplified residual signals and subranges the interpolated signals according to the corresponding multiple bit value. A final stage amplifies and flash converts to determine a final multiple bit value. An error corrector combines each set of multiple bit values into a digital value.
摘要:
A dual pump circuit including a transmission gate and a dual charge pump. The transmission gate includes a p-channel transistor and an n-channel transistor, each having a control terminal and a pair of current terminals coupled between a dual pump input and a dual pump output. The dual charge pump includes first and second pump circuits, where each pump circuit is coupled to the dual pump input and to a control terminal of a corresponding one of the transmission gate transistors. Each pump circuit is operative to linearize operation of its corresponding transmission gate transistor by maintaining VGS—VT constant. The dual pump circuit is used in a track and hold circuit including at least one dual pump sampling circuit, at least one sampling capacitor, and a control circuit for controlling input signal sampling timing. Each dual pump sampling circuit includes the transmission gate and a dual charge pump.
摘要:
A high density memory for use with integrated circuit technology is disclosed. The memory comprises one or more memory cells including a word line conductor, a via having a first resistive state and a second resistive state, and a bit line conductor. The bit line conductor has high conductance in a first state and low conductance in a second state. The via has high resistance in a first state and low resistance in a second state. The state of the via may be user-programmable. There maybe a plurality of word lines and bit lines arranged in overlying relationship with a plurality of vias disposed at the intersections of the word and bit lines. Because the memory cells do not rely on transistors formed in the substrate of the integrated circuit, multiple layers of word lines, vias, bit lines may be arranged to increase density.