公开(公告)号：US08785908B2

公开(公告)日：2014-07-22

申请号：US13473020

申请日：2012-05-16

申请人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

发明人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

IPC分类号： H01L29/06

CPC分类号： H01L31/101 ,  H01L27/14603 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/0336 ,  H01L31/035218 ,  H01L31/03845 ,  H01L31/09 ,  H01L31/109 ,  Y02E10/50

摘要： Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

摘要翻译： 光敏设备包括包括第一接触和第二接触的设备，每个具有功函数，以及在第一接触件和第二接触件之间的光敏材料。 光敏材料包括p型半导体，并且光敏材料具有功函数。 电路在第一触点和第二触点之间施加偏置电压。 当在第一接触和第二接触之间施加偏压时，光敏材料具有大于从第一接触到第二接触的电子传播时间的电子寿命。 第一次接触提供电子注入并阻止孔的提取。 第一接触和光敏材料之间的界面提供了小于1cm / s的表面复合速度。

公开(公告)号：US08203195B2

公开(公告)日：2012-06-19

申请号：US12506233

申请日：2009-07-20

申请人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

发明人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

IPC分类号： H01L31/0232

CPC分类号： H01L31/101 ,  H01L27/14603 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/0336 ,  H01L31/035218 ,  H01L31/03845 ,  H01L31/09 ,  H01L31/109 ,  Y02E10/50

摘要： Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

摘要翻译： 光敏设备包括包括第一接触和第二接触的设备，每个具有功函数，以及在第一接触件和第二接触件之间的光敏材料。 光敏材料包括p型半导体，并且光敏材料具有功函数。 电路在第一触点和第二触点之间施加偏置电压。 当在第一接触和第二接触之间施加偏压时，光敏材料具有大于从第一接触到第二接触的电子传播时间的电子寿命。 第一次接触提供电子注入并阻止孔的提取。 第一接触和光敏材料之间的界面提供了小于1cm / s的表面复合速度。

公开(公告)号：US20100019335A1

公开(公告)日：2010-01-28

申请号：US12506236

申请日：2009-07-20

申请人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

发明人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

IPC分类号： H01L31/101

CPC分类号： H01L31/03529 ,  H01L27/14603 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/109 ,  Y02E10/50

摘要： Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises an n-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

摘要翻译： 光敏设备包括包括第一接触和第二接触的设备，每个具有功函数，以及在第一接触件和第二接触件之间的光敏材料。 光敏材料包括n型半导体，并且光敏材料具有功函数。 电路在第一触点和第二触点之间施加偏置电压。 当在第一接触和第二接触之间施加偏压时，光敏材料具有大于从第一接触到第二接触的电子传播时间的电子寿命。 第一次接触提供电子注入并阻止孔的提取。 第一接触和光敏材料之间的界面提供了小于1cm / s的表面复合速度。

公开(公告)号：US08916947B2

公开(公告)日：2014-12-23

申请号：US13156235

申请日：2011-06-08

申请人： Edward Hartley Sargent ,  Rajsapan Jain ,  Igor Constantin Ivanov ,  Michael R. Malone ,  Michael Charles Brading ,  Hui Tian ,  Pierre Henri Rene Della Nave ,  Jess Jan Young Lee

发明人： Edward Hartley Sargent ,  Rajsapan Jain ,  Igor Constantin Ivanov ,  Michael R. Malone ,  Michael Charles Brading ,  Hui Tian ,  Pierre Henri Rene Della Nave ,  Jess Jan Young Lee

IPC分类号： H01L31/00 ,  H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/369 ,  H04N5/3765 ,  H04N5/378

摘要： In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.

摘要翻译： 在各种实施例中，光电检测器包括半导体衬底和多个像素区域。 多个像素区域中的每一个在半导体衬底上包括光敏层。 为多个像素区域中的每一个形成像素电路。 每个像素电路包括针对多个像素区域中的每一个的钉扎光电二极管，电荷存储器和读出电路。 光敏层与硅二极管的一部分电连通以形成钉扎光电二极管。 与与像素区域相关联的光敏层连通的两个电极之间的电位差表现出时间依赖偏差; 第一胶片复位期间的偏压与第二积分期间的偏压不同。

公开(公告)号：US20120280226A1

公开(公告)日：2012-11-08

申请号：US13473020

申请日：2012-05-16

申请人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

发明人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

IPC分类号： H01L31/0264 ,  H01L31/0232 ,  B82Y99/00

CPC分类号： H01L31/101 ,  H01L27/14603 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/0336 ,  H01L31/035218 ,  H01L31/03845 ,  H01L31/09 ,  H01L31/109 ,  Y02E10/50

摘要： Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

摘要翻译： 光敏设备包括包括第一接触和第二接触的设备，每个具有功函数，以及在第一接触件和第二接触件之间的光敏材料。 光敏材料包括p型半导体，并且光敏材料具有功函数。 电路在第一触点和第二触点之间施加偏置电压。 当在第一接触和第二接触之间施加偏压时，光敏材料具有大于从第一接触到第二接触的电子传播时间的电子寿命。 第一次接触提供电子注入并阻止孔的提取。 第一接触和光敏材料之间的界面提供了小于1cm / s的表面复合速度。

公开(公告)号：US09369621B2

公开(公告)日：2016-06-14

申请号：US13099903

申请日：2011-05-03

申请人： Michael R. Malone ,  Pierre Henri Rene Della Nave ,  Michael Charles Brading ,  Jess Jan Young Lee ,  Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

发明人： Michael R. Malone ,  Pierre Henri Rene Della Nave ,  Michael Charles Brading ,  Jess Jan Young Lee ,  Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

IPC分类号： H04N5/225 ,  H04N5/232 ,  H04N5/3745 ,  H01L27/146

CPC分类号： H04N5/2258 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/23232 ,  H04N5/23296 ,  H04N5/37452 ,  H04N5/378

摘要： In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array includes at least four megapixels and the second image sensor array includes one-half or less than the number of pixels in the first image sensor array.

摘要翻译： 在各种示例性实施例中，提供了一种成像系统和方法。 在一个实施例中，系统包括第一图像传感器阵列，第一光学系统，用于投影第一图像传感器阵列上的第一图像，第一光学系统具有第一缩放级别。 第二光学系统是在第二图像传感器阵列上投影第二图像，第二光学系统具有第二缩放水平。 第二图像传感器阵列和第二光学系统指向与第一图像传感器阵列和第一光学系统相同的方向。 第二缩放级别大于第一缩放级别，使得投影到第二图像传感器阵列上的第二图像放大在投影在第一图像传感器阵列上的第一图像的一部分上。 第一图像传感器阵列包括至少四百万像素，并且第二图像传感器阵列包括第一图像传感器阵列中的像素数量的一半或更小。

公开(公告)号：US20150357360A1

公开(公告)日：2015-12-10

申请号：US14734760

申请日：2015-06-09

申请人： Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

发明人： Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

IPC分类号： H01L27/146

CPC分类号： H01L27/14605 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14652 ,  H01L2224/48091 ,  H04N9/045 ,  H01L2924/00014

摘要： Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor having at least two pixel electrodes per color region, and having at least two modes is disclosed. The example image sensor includes a first, unbinned, mode; and a second, binned, mode. In the first, unbinned mode, the at least two pixel electrodes per color region are to be reset to substantially similar levels. In the second, binned mode, a first pixel electrode of the at the least two pixel electrodes is to be reset to a high voltage that results in efficient collection of photocharge, and a second pixel electrode of the at the least two pixel electrodes is to be reset to a low voltage that results in less efficient collection of photocharge. Other methods and apparatuses are disclosed.

摘要翻译： 各种实施例包括用于形成和使用图像传感器的像素的方法和装置。 在一个实施例中，公开了一种具有每个颜色区域至少两个像素电极并具有至少两种模式的图像传感器。 示例图像传感器包括第一，未组合的模式; 和第二个binned模式。 在第一种非混合模式中，每个颜色区域的至少两个像素电极将被重置为基本相似的水平。 在第二种装载模式中，将至少两个像素电极的第一像素电极复位到导致光电荷的有效收集的高电压，并且至少两个像素电极的第二像素电极为 复位到低电压，导致光电荷收集效率较低。 公开了其他方法和装置。

公开(公告)号：US08138567B2

公开(公告)日：2012-03-20

申请号：US12506236

申请日：2009-07-20

申请人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

发明人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

IPC分类号： H01L31/0232

CPC分类号： H01L31/03529 ,  H01L27/14603 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/109 ,  Y02E10/50

摘要： Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises an n-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

摘要翻译： 光敏设备包括包括第一接触和第二接触的设备，每个具有功函数，以及在第一接触件和第二接触件之间的光敏材料。 光敏材料包括n型半导体，并且光敏材料具有功函数。 电路在第一触点和第二触点之间施加偏置电压。 当在第一接触和第二接触之间施加偏压时，光敏材料具有大于从第一接触到第二接触的电子传播时间的电子寿命。 第一次接触提供电子注入并阻止孔的提取。 第一接触和光敏材料之间的界面提供了小于1cm / s的表面复合速度。

公开(公告)号：US20110309462A1

公开(公告)日：2011-12-22

申请号：US13156235

申请日：2011-06-08

申请人： Edward Hartley Sargent ,  Rajsapan Jain ,  Igor Constantin Ivanov ,  Michael R. Malone ,  Michael Charles Brading ,  Hui Tian ,  Pierre Henri Rene Della Nave ,  Jess Jan Young Lee

发明人： Edward Hartley Sargent ,  Rajsapan Jain ,  Igor Constantin Ivanov ,  Michael R. Malone ,  Michael Charles Brading ,  Hui Tian ,  Pierre Henri Rene Della Nave ,  Jess Jan Young Lee

IPC分类号： H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/369 ,  H04N5/3765 ,  H04N5/378

摘要： In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.

摘要翻译： 在各种实施例中，光电检测器包括半导体衬底和多个像素区域。 多个像素区域中的每一个在半导体衬底上包括光敏层。 为多个像素区域中的每一个形成像素电路。 每个像素电路包括针对多个像素区域中的每一个的钉扎光电二极管，电荷存储器和读出电路。 光敏层与硅二极管的一部分电连通以形成钉扎光电二极管。 与与像素区域相关联的光敏层连通的两个电极之间的电位差表现出时间依赖偏差; 第一胶片复位期间的偏压与第二积分期间的偏压不同。

公开(公告)号：US20110267510A1

公开(公告)日：2011-11-03

申请号：US13099903

申请日：2011-05-03

申请人： Michael R. Malone ,  Pierre Henri Rene Della Nave ,  Michael Charles Brading ,  Jess Jan Young Lee ,  Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

发明人： Michael R. Malone ,  Pierre Henri Rene Della Nave ,  Michael Charles Brading ,  Jess Jan Young Lee ,  Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

IPC分类号： H04N5/225

CPC分类号： H04N5/2258 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/23232 ,  H04N5/23296 ,  H04N5/37452 ,  H04N5/378

摘要： In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array includes at least four megapixels and the second image sensor array includes one-half or less than the number of pixels in the first image sensor array.

摘要翻译： 在各种示例性实施例中，提供了一种成像系统和方法。 在一个实施例中，系统包括第一图像传感器阵列，第一光学系统，用于投影第一图像传感器阵列上的第一图像，第一光学系统具有第一缩放级别。 第二光学系统是在第二图像传感器阵列上投影第二图像，第二光学系统具有第二缩放水平。 第二图像传感器阵列和第二光学系统指向与第一图像传感器阵列和第一光学系统相同的方向。 第二缩放级别大于第一缩放级别，使得投影到第二图像传感器阵列上的第二图像放大在投影在第一图像传感器阵列上的第一图像的一部分上。 第一图像传感器阵列包括至少四百万像素，并且第二图像传感器阵列包括第一图像传感器阵列中的像素数量的一半或更小。