Electropolishing and electroplating methods
    1.
    发明申请
    Electropolishing and electroplating methods 审中-公开
    电抛光和电镀方法

    公开(公告)号:US20060049056A1

    公开(公告)日:2006-03-09

    申请号:US10510656

    申请日:2003-04-11

    IPC分类号: C25D7/12

    摘要: In one aspect of the present invention, an exemplary method is provided for electroplating a conductive film on a wafer. The method includes electroplating a metal film on a semiconductor structure having recessed regions and non-recessed regions within a first current density range before the metal layer is planar above recessed regions of a first density, and electroplating within a second current density range after the metal layer is planar above the recessed regions. The second current density range is greater than the first current density range. In one example, the method further includes electroplating in the second current density range until the metal layer is planar above recessed regions of a second density, the second density being greater than the first density, and electroplating within a third current density range thereafter.

    摘要翻译: 在本发明的一个方面,提供了一种用于在晶片上电镀导电膜的示例性方法。 该方法包括在金属层在第一密度的凹陷区域之上平面之前在第一电流密度范围内的具有凹陷区域和非凹陷区域的半导体结构上电镀金属膜,并且在金属之后的第二电流密度范围内进行电镀 层在凹陷区域之上是平面的。 第二电流密度范围大于第一电流密度范围。 在一个示例中,该方法还包括在第二电流密度范围内的电镀,直到金属层在第二密度的凹陷区域之上是平面的,第二密度大于第一密度,并且之后在第三电流密度范围内进行电镀。

    Electropolishing metal layers on wafers having trenches or vias with dummy structures

    公开(公告)号:US06638863B2

    公开(公告)日:2003-10-28

    申请号:US10108614

    申请日:2002-03-27

    申请人: Hui Wang Peihaur Yih

    发明人: Hui Wang Peihaur Yih

    IPC分类号: H01L21302

    摘要: In electropolishing a metal layer on a semiconductor wafer, a dielectric layer is formed on the semiconductor wafer. The dielectric layer is formed with a recessed area and a non-recessed area. A plurality of dummy structures are formed within the recessed areas where the dummy structures are inactive areas configured to increase the planarity of a metal layer subsequently formed on the dielectric layer. A metal layer is then formed to fill the recessed area and cover the non-recessed area and the plurality of dummy structures. The metal layer is then electropolished to expose the non-recessed area.

    Adaptive electropolishing using thickness measurement and removal of barrier and sacrificial layers
    3.
    发明申请
    Adaptive electropolishing using thickness measurement and removal of barrier and sacrificial layers 审中-公开
    使用厚度测量和去除屏障和牺牲层的自适应电抛光

    公开(公告)号:US20050245086A1

    公开(公告)日:2005-11-03

    申请号:US10520493

    申请日:2003-07-22

    摘要: A metal layer formed on a semiconductor wafer is adaptively electropolished. A portion of the metal layer is electropolished, where portions of the metal layer are electropolished separately. Before electropolishing the portion, a thickness measurement of the portion of the metal layer to be electropolished is determined. The amount that the portion is to be electropolished is adjusted based on the thickness measurement. A metal layer formed on a semiconductor wafer is polished, where the metal layer is formed on a barrier layer, which is formed on a dielectric layer having a recessed area and a non-recessed area, and where the metal layer covers the recessed area and the non-recessed areas of the dielectric layer. The metal layer is polished to remove, the metal layer covering the non-recessed area. The metal layer in the recessed area is polished to a height below the non-recessed area, where the height is equal to or greater than a thickness of the barrier layer.

    摘要翻译: 形成在半导体晶片上的金属层被自适应地电解抛光。 金属层的一部分被电解抛光,其中金属层的部分被单独地电抛光。 在电抛光该部分之前,确定要电解抛光的金属层的部分的厚度测量。 基于厚度测量来调整部分被电抛光的量。 研磨形成在半导体晶片上的金属层,其中金属层形成在形成在具有凹陷区域和非凹陷区域的电介质层上的阻挡层上,并且金属层覆盖凹陷区域, 电介质层的非凹陷区域。 金属层被抛光以去除覆盖非凹陷区域的金属层。 凹陷区域中的金属层被抛光到非凹陷区域的高度,其高度等于或大于阻挡层的厚度。