RF power transistor circuit
    1.
    发明授权
    RF power transistor circuit 有权
    RF功率晶体管电路

    公开(公告)号:US08659359B2

    公开(公告)日:2014-02-25

    申请号:US12746793

    申请日:2010-04-22

    IPC分类号: H03F3/04

    摘要: A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

    摘要翻译: 射频(RF)功率晶体管电路包括功率晶体管和去耦电路。 功率晶体管具有耦合到用于接收RF输入信号的输入端子的控制电极,用于在输出端子处提供RF输出信号的第一电流电极和耦合到电源电压端子的第二电流电极。 去耦电路包括串联耦合在第一功率晶体管的控制电极和电源电压端之间的第一电感元件,第一电阻器和第一电容器。 第一个去耦电路用于衰减低于RF频率的频率的谐振。

    RF POWER TRANSISTOR CIRCUIT
    2.
    发明申请
    RF POWER TRANSISTOR CIRCUIT 有权
    射频功率晶体管电路

    公开(公告)号:US20130033325A1

    公开(公告)日:2013-02-07

    申请号:US12746793

    申请日:2010-04-22

    IPC分类号: H03F3/16

    摘要: A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

    摘要翻译: 射频(RF)功率晶体管电路包括功率晶体管和去耦电路。 功率晶体管具有耦合到用于接收RF输入信号的输入端子的控制电极,用于在输出端子处提供RF输出信号的第一电流电极和耦合到电源电压端子的第二电流电极。 去耦电路包括串联耦合在第一功率晶体管的控制电极和电源电压端之间的第一电感元件,第一电阻器和第一电容器。 第一个去耦电路用于衰减低于RF频率的频率的谐振。