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公开(公告)号：US09281283B2
公开(公告)日：2016-03-08
申请号：US13611793
申请日：2012-09-12
IPC分类号： H01L23/66 , H01L23/047 , H01L23/00
CPC分类号： H01L23/66 , H01L23/047 , H01L23/49589 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6655 , H01L2223/6672 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49052 , H01L2224/49175 , H01L2924/00014 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/16152 , H01L2924/181 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099
摘要： Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices.
摘要翻译： 半导体器件（例如，RF器件）的实施例包括衬底，隔离结构，有源器件，引线和电路。 隔离结构耦合到衬底，并且包括开口。 有源器件区域由通过开口暴露的衬底表面的一部分限定。 有源器件耦合到有源器件区域内的衬底表面。 电路电耦合在有源器件和引线之间。 电路包括位于有源器件区域外的一个或多个元件（例如，物理耦合到隔离结构和/或在引线下方）。 位于有源器件区域之外的元件可以包括封装端接电路和/或阻抗匹配电路的元件。 实施例还包括制造这种半导体器件的方法。
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公开(公告)号：US09252715B2
公开(公告)日：2016-02-02
申请号：US14211068
申请日：2014-03-14
申请人： Jeffrey K. Jones , Paul R. Hart , Michael E. Watts
发明人： Jeffrey K. Jones , Paul R. Hart , Michael E. Watts
CPC分类号： H03F1/0288 , H03F1/0266 , H03F3/19 , H03F3/193 , H03F3/211 , H03F3/68 , H03F2200/168 , H03F2200/273 , H03F2200/451 , H03F2200/555
摘要： A variable-bias power amplifier is provided, comprising: a first variable voltage source generating first bias voltages based on bias control signals; a first amplifier circuit amplifying an output RF signal to generate a first amplified signal based on the first bias voltages; a second variable voltage source generating second bias voltages based on the bias control signals; a second amplifier circuit amplifying the output RF signal to generate a second amplified signal based on the second bias voltages; and a DC isolation circuit between the first amplifier circuit and the second amplifier circuit, electrically isolating DC currents at the first amplifier from DC currents at the second amplifier, wherein the first variable voltage source can be controlled independently from the second variable voltage source, and the first amplifier circuit, the second amplifier circuit, and the DC isolation circuit are all formed on a single die.
摘要翻译： 提供了一种可变偏置功率放大器，包括：第一可变电压源，其基于偏置控制信号产生第一偏置电压; 第一放大器电路，放大输出RF信号，以产生基于第一偏置电压的第一放大信号; 第二可变电压源，基于偏置控制信号产生第二偏置电压; 放大所述输出RF信号以产生基于所述第二偏置电压的第二放大信号的第二放大器电路; 以及在所述第一放大器电路和所述第二放大器电路之间的DC隔离电路，将所述第一放大器处的DC电流与所述第二放大器处的DC电流电隔离，其中所述第一可变电压源可独立于所述第二可变电压源而被控制，以及 第一放大器电路，第二放大器电路和DC隔离电路都形成在单个管芯上。
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公开(公告)号：US09236363B2
公开(公告)日：2016-01-12
申请号：US14204340
申请日：2014-03-11
CPC分类号： H01L24/48 , H01L21/822 , H01L22/14 , H01L23/642 , H01L23/647 , H01L24/43 , H01L24/45 , H01L27/0676 , H01L27/0794 , H01L28/20 , H01L2224/05578 , H01L2224/05599 , H01L2224/13028 , H01L2224/1613 , H01L2224/438 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4801 , H01L2224/48011 , H01L2224/4813 , H01L2224/4847 , H01L2224/85399 , H01L2224/85423 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/1203 , H01L2924/1205 , H01L2924/1207 , H01L2924/20658 , H01L2924/30107 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756
摘要： A semiconductor device includes a substrate, first and second bond pad structures supported by the substrate and spaced from one another by a gap, and a wire bond foot jumper extending across the gap and bonded to the first and second bond pad structures.
摘要翻译： 半导体器件包括衬底，由衬底支撑并且通过间隙彼此间隔开的第一和第二接合焊盘结构，以及跨越间隙延伸并结合到第一和第二接合焊盘结构的引线接合脚跨接件。
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公开(公告)号：US08659359B2
公开(公告)日：2014-02-25
申请号：US12746793
申请日：2010-04-22
IPC分类号： H03F3/04
CPC分类号： H03F1/3205 , H03F1/0211 , H03F1/0288 , H03F1/3247 , H03F1/42 , H03F1/565 , H03F3/04 , H03F3/193 , H03F3/21 , H03F3/211 , H03F3/265 , H03F2200/225 , H03F2200/391 , H03F2200/451 , H03F2203/21106
摘要： A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
摘要翻译： 射频（RF）功率晶体管电路包括功率晶体管和去耦电路。 功率晶体管具有耦合到用于接收RF输入信号的输入端子的控制电极，用于在输出端子处提供RF输出信号的第一电流电极和耦合到电源电压端子的第二电流电极。 去耦电路包括串联耦合在第一功率晶体管的控制电极和电源电压端之间的第一电感元件，第一电阻器和第一电容器。 第一个去耦电路用于衰减低于RF频率的频率的谐振。
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公开(公告)号：US20130033325A1
公开(公告)日：2013-02-07
申请号：US12746793
申请日：2010-04-22
IPC分类号： H03F3/16
CPC分类号： H03F1/3205 , H03F1/0211 , H03F1/0288 , H03F1/3247 , H03F1/42 , H03F1/565 , H03F3/04 , H03F3/193 , H03F3/21 , H03F3/211 , H03F3/265 , H03F2200/225 , H03F2200/391 , H03F2200/451 , H03F2203/21106
摘要： A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
摘要翻译： 射频（RF）功率晶体管电路包括功率晶体管和去耦电路。 功率晶体管具有耦合到用于接收RF输入信号的输入端子的控制电极，用于在输出端子处提供RF输出信号的第一电流电极和耦合到电源电压端子的第二电流电极。 去耦电路包括串联耦合在第一功率晶体管的控制电极和电源电压端之间的第一电感元件，第一电阻器和第一电容器。 第一个去耦电路用于衰减低于RF频率的频率的谐振。
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公开(公告)号：US20110266687A1
公开(公告)日：2011-11-03
申请号：US13179295
申请日：2011-07-08
申请人： Jeffrey K. Jones , Margaret A. Szymanowski , Michele L. Miera , Xiaowei Ren , Wayne R. Burger , Mark A. Bennett , Colin Kerr
发明人： Jeffrey K. Jones , Margaret A. Szymanowski , Michele L. Miera , Xiaowei Ren , Wayne R. Burger , Mark A. Bennett , Colin Kerr
IPC分类号： H01L23/488
CPC分类号： H01L24/05 , H01L24/03 , H01L29/0649 , H01L2224/05076 , H01L2224/05558 , H01L2224/05576 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01027 , H01L2924/01032 , H01L2924/01033 , H01L2924/01057 , H01L2924/01082 , H01L2924/05042 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00
摘要： Electronic elements having an active device region and bonding pad (BP) region on a common substrate desirably include a dielectric region underlying the BP to reduce the parasitic impedance of the BP and its interconnection as the electronic elements are scaled to higher power and/or operating frequency. Mechanical stress created by plain (e.g., oxide only) dielectric regions can adversely affect performance, manufacturing yield, pad-to-device proximity and occupied area. This can be avoided by providing a composite dielectric region having electrically isolated inclusions of a thermal expansion coefficient (TEC) less than that of the dielectric material in which they are embedded and/or closer to the substrate TEC. For silicon substrates, poly or amorphous silicon is suitable for the inclusions and silicon oxide for the dielectric material. The inclusions preferably have a blade-like shape separated by and enclosed within the dielectric material.
摘要翻译： 在共同衬底上具有有源器件区域和焊盘（BP）区域的电子元件期望地包括位于BP之下的电介质区域，以在电子元件被缩放到更高功率和/或操作时降低BP的寄生阻抗及其互连 频率。 由平原（例如，仅氧化物）电介质区域产生的机械应力可能不利地影响性能，制造产量，焊盘到设备的接近度和占用面积。 这可以通过提供具有比它们被嵌入和/或更靠近衬底TEC的介电材料的热膨胀系数小的热膨胀系数（TEC）的电隔离夹杂物的复合电介质区域来避免。 对于硅衬底，聚硅或非晶硅适用于介电材料的夹杂物和氧化硅。 夹杂物优选具有由介电材料分离并封闭在电介质材料内的刀片状形状。
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7.发明授权公开(公告)号：US07998852B2
公开(公告)日：2011-08-16
申请号：US12328319
申请日：2008-12-04
申请人： Jeffrey K. Jones , Margaret A. Szymanowski , Michele L. Miera , Xiaowei Ren , Wayne R. Burger , Mark A. Bennett , Colin Kerr
发明人： Jeffrey K. Jones , Margaret A. Szymanowski , Michele L. Miera , Xiaowei Ren , Wayne R. Burger , Mark A. Bennett , Colin Kerr
IPC分类号： H01L21/44
CPC分类号： H01L24/05 , H01L24/03 , H01L29/0649 , H01L2224/05076 , H01L2224/05558 , H01L2224/05576 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01027 , H01L2924/01032 , H01L2924/01033 , H01L2924/01057 , H01L2924/01082 , H01L2924/05042 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00
摘要： Electronic elements (44, 44′, 44″) having an active device region (46) and bonding pad (BP) region (60) on a common substrate (45) desirably include a dielectric region underlying the BP (35) to reduce the parasitic impedance of the BP (35) and its interconnection (41) as the electronic elements (44, 44′, 44″) are scaled to higher power and/or operating frequency. Mechanical stress created by plain (e.g., oxide only) dielectric regions (36′) can adversely affect performance, manufacturing yield, pad-to-device proximity and occupied area. This can be avoided by providing a composite dielectric region (62, 62′, 62″) having electrically isolated inclusions (65, 65′, 65′) of a thermal expansion coefficient (TEC) less than that of the dielectric material (78, 78′, 78″) in which they are embedded and/or closer to the substrate (45) TEC. For silicon substrates (45), poly or amorphous silicon is suitable for the inclusions (65, 65′, 65″) and silicon oxide for the dielectric material (78, 78′, 78″). The inclusions (65, 65′, 65″) preferably have a blade-like shape separated by and enclosed within the dielectric material (78, 78′, 78″).
摘要翻译： 具有在公共衬底（45）上的有源器件区（46）和焊盘（BP）区（60）的电子元件（44,44'，44“）理想地包括位于BP（35）下方的电介质区域，以减少 作为电子元件（44,44'，44“）的BP（35）及其互连（41）的寄生阻抗被缩放到更高的功率和/或工作频率。 由平坦（例如，仅氧化物）介电区域（36'）产生的机械应力可能不利地影响性能，制造产量，焊盘到设备的接近度和占用面积。 这可以通过提供具有电绝缘夹杂物（65,65'，65'）的复合电介质区域（65,65'，65'）来避免，所述电绝缘夹杂物的热膨胀系数（TEC）小于电介质材料（78， 78'，78“），其中它们被嵌入和/或更靠近衬底（45）TEC。 对于硅衬底（45），多晶硅或非晶硅适合用于介电材料（78,78'，78“）的夹杂物（65,65'，65”）和氧化硅。 夹杂物（65,65'，65“）优选具有由电介质材料（78,78'，78”）分隔开并封闭在其中的刀片形状。
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公开(公告)号：US07786603B2
公开(公告)日：2010-08-31
申请号：US11262057
申请日：2005-10-28
CPC分类号： H01L25/16 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/48011 , H01L2224/4809 , H01L2224/48095 , H01L2224/49052 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/13055 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/2065 , H01L2924/20651 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： According to one aspect of the present invention, an electronic assembly is provided. The electronic assembly comprises a substrate with a lead connected thereto and first and second microelectronic components on the substrate. The first microelectronic component has first and second portions. A plurality of conductors interconnects the first microelectronic component and a selected one of the lead and the second microelectronic component. A first of the conductors contacts the first portion of the first microelectronic component and has a first inductance, and a second of the conductors contacts the second portion of the microelectronic component and has a second inductance. The second inductance is greater than the first inductance.
摘要翻译： 根据本发明的一个方面，提供一种电子组件。 电子组件包括具有与其连接的引线的基板和在基板上的第一和第二微电子部件。 第一微电子部件具有第一和第二部分。 多个导体将第一微电子部件和引线和第二微电子部件中的选定引线互连。 导体中的第一个接触第一微电子部件的第一部分并且具有第一电感，并且第二导体接触微电子部件的第二部分并且具有第二电感。 第二电感大于第一电感。
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公开(公告)号：US4789365A
公开(公告)日：1988-12-06
申请号：US040036
申请日：1987-04-20
申请人： Jeffrey K. Jones
发明人： Jeffrey K. Jones
IPC分类号： B60F3/00
CPC分类号： B60F3/0084
摘要： Apparatus for converting a bicycle to a maneuverable, pedal-operable aquacycle is disclosed. A twin hull assembly includes a support framework for supporting a bicycle by its horizontal frame member. A friction wheel, which may be rotated with the rear wheel of the bicycle by pedal action, turns symmetrically spaced apart, oppositely pitched, twin propellers via dual flexible axles that extend laterally and rearwardly from the friction wheel. An in-line dual rudder control system is provided that, responsive to the turning of the handlebars, efficiently turns the aquacycle in a direction corresponding to the direction a bicycle would turn. Except for conversion hardware consisting of two U-bolts and four nuts, the apparatus is of lightweight, polymeric materials.
摘要翻译： 公开了一种用于将自行车转换成可操纵的踏板可操作的水循环的装置。 双壳体组件包括用于通过其水平框架构件支撑自行车的支撑框架。 可以通过踏板动作与自行车的后轮一起旋转的摩擦轮通过从摩擦轮横向和向后延伸的双重柔性轴而对称地间隔开，相对地倾斜的双螺旋桨。 提供了一种在线双舵控制系统，其响应于车把的转动，有效地沿与自行车转向方向相反的方向转动水车。 除了由两个U型螺栓和四个螺母组成的转换硬件之外，该设备是重量轻的聚合材料。
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公开(公告)号：US09225300B2
公开(公告)日：2015-12-29
申请号：US14265849
申请日：2014-04-30
CPC分类号： H03F1/56 , H03F3/19 , H03F3/191 , H03F3/193 , H03F3/21 , H03F3/211 , H03F2200/222 , H03F2200/318 , H03F2200/451
摘要： A multiple-path, configurable, radio-frequency (RF) circuit is provided, including: a first amplifier path amplify a first RF signal to generate a first amplified signal; a second amplifier path configured to amplify a second RF signal to generate a second amplified signal; a corrective input matching circuit, configured to change first input-impedance-matching properties of the first amplifier path, and to change second input-impedance-matching properties of the second amplifier path; a first isolation element configured to selectively ground an input node of the second amplifier path; a second isolation element configured to selectively ground an output node of the second amplifier path; and a third isolation element connected between the first and second amplifier paths, configured to selectively isolate the corrective input matching circuit from first and second input nodes of the first and second amplifier paths, respectively, or connect the corrective input matching circuit to the first and second input nodes.
摘要翻译： 提供多路径，可配置的射频（RF）电路，包括：第一放大器路径放大第一RF信号以产生第一放大信号; 第二放大器路径，被配置为放大第二RF信号以产生第二放大信号; 校正输入匹配电路，被配置为改变第一放大器路径的第一输入阻抗匹配特性，并改变第二放大器路径的第二输入阻抗匹配特性; 第一隔离元件，被配置为选择性地接地第二放大器路径的输入节点; 第二隔离元件，被配置为选择性地接地所述第二放大器路径的输出节点; 以及连接在第一和第二放大器路径之间的第三隔离元件，被配置为分别将校正输入匹配电路与第一和第二放大器路径的第一和第二输入节点分离，或将校正输入匹配电路连接到第一和第二放大器路径 第二输入节点。
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