摘要:
Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices.
摘要:
A variable-bias power amplifier is provided, comprising: a first variable voltage source generating first bias voltages based on bias control signals; a first amplifier circuit amplifying an output RF signal to generate a first amplified signal based on the first bias voltages; a second variable voltage source generating second bias voltages based on the bias control signals; a second amplifier circuit amplifying the output RF signal to generate a second amplified signal based on the second bias voltages; and a DC isolation circuit between the first amplifier circuit and the second amplifier circuit, electrically isolating DC currents at the first amplifier from DC currents at the second amplifier, wherein the first variable voltage source can be controlled independently from the second variable voltage source, and the first amplifier circuit, the second amplifier circuit, and the DC isolation circuit are all formed on a single die.
摘要:
A semiconductor device includes a substrate, first and second bond pad structures supported by the substrate and spaced from one another by a gap, and a wire bond foot jumper extending across the gap and bonded to the first and second bond pad structures.
摘要:
A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
摘要:
A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
摘要:
Electronic elements having an active device region and bonding pad (BP) region on a common substrate desirably include a dielectric region underlying the BP to reduce the parasitic impedance of the BP and its interconnection as the electronic elements are scaled to higher power and/or operating frequency. Mechanical stress created by plain (e.g., oxide only) dielectric regions can adversely affect performance, manufacturing yield, pad-to-device proximity and occupied area. This can be avoided by providing a composite dielectric region having electrically isolated inclusions of a thermal expansion coefficient (TEC) less than that of the dielectric material in which they are embedded and/or closer to the substrate TEC. For silicon substrates, poly or amorphous silicon is suitable for the inclusions and silicon oxide for the dielectric material. The inclusions preferably have a blade-like shape separated by and enclosed within the dielectric material.
摘要:
Electronic elements (44, 44′, 44″) having an active device region (46) and bonding pad (BP) region (60) on a common substrate (45) desirably include a dielectric region underlying the BP (35) to reduce the parasitic impedance of the BP (35) and its interconnection (41) as the electronic elements (44, 44′, 44″) are scaled to higher power and/or operating frequency. Mechanical stress created by plain (e.g., oxide only) dielectric regions (36′) can adversely affect performance, manufacturing yield, pad-to-device proximity and occupied area. This can be avoided by providing a composite dielectric region (62, 62′, 62″) having electrically isolated inclusions (65, 65′, 65′) of a thermal expansion coefficient (TEC) less than that of the dielectric material (78, 78′, 78″) in which they are embedded and/or closer to the substrate (45) TEC. For silicon substrates (45), poly or amorphous silicon is suitable for the inclusions (65, 65′, 65″) and silicon oxide for the dielectric material (78, 78′, 78″). The inclusions (65, 65′, 65″) preferably have a blade-like shape separated by and enclosed within the dielectric material (78, 78′, 78″).
摘要:
According to one aspect of the present invention, an electronic assembly is provided. The electronic assembly comprises a substrate with a lead connected thereto and first and second microelectronic components on the substrate. The first microelectronic component has first and second portions. A plurality of conductors interconnects the first microelectronic component and a selected one of the lead and the second microelectronic component. A first of the conductors contacts the first portion of the first microelectronic component and has a first inductance, and a second of the conductors contacts the second portion of the microelectronic component and has a second inductance. The second inductance is greater than the first inductance.
摘要:
Apparatus for converting a bicycle to a maneuverable, pedal-operable aquacycle is disclosed. A twin hull assembly includes a support framework for supporting a bicycle by its horizontal frame member. A friction wheel, which may be rotated with the rear wheel of the bicycle by pedal action, turns symmetrically spaced apart, oppositely pitched, twin propellers via dual flexible axles that extend laterally and rearwardly from the friction wheel. An in-line dual rudder control system is provided that, responsive to the turning of the handlebars, efficiently turns the aquacycle in a direction corresponding to the direction a bicycle would turn. Except for conversion hardware consisting of two U-bolts and four nuts, the apparatus is of lightweight, polymeric materials.
摘要:
A multiple-path, configurable, radio-frequency (RF) circuit is provided, including: a first amplifier path amplify a first RF signal to generate a first amplified signal; a second amplifier path configured to amplify a second RF signal to generate a second amplified signal; a corrective input matching circuit, configured to change first input-impedance-matching properties of the first amplifier path, and to change second input-impedance-matching properties of the second amplifier path; a first isolation element configured to selectively ground an input node of the second amplifier path; a second isolation element configured to selectively ground an output node of the second amplifier path; and a third isolation element connected between the first and second amplifier paths, configured to selectively isolate the corrective input matching circuit from first and second input nodes of the first and second amplifier paths, respectively, or connect the corrective input matching circuit to the first and second input nodes.