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公开(公告)号：US08659359B2
公开(公告)日：2014-02-25
申请号：US12746793
申请日：2010-04-22
IPC分类号： H03F3/04
CPC分类号： H03F1/3205 , H03F1/0211 , H03F1/0288 , H03F1/3247 , H03F1/42 , H03F1/565 , H03F3/04 , H03F3/193 , H03F3/21 , H03F3/211 , H03F3/265 , H03F2200/225 , H03F2200/391 , H03F2200/451 , H03F2203/21106
摘要： A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
摘要翻译： 射频（RF）功率晶体管电路包括功率晶体管和去耦电路。 功率晶体管具有耦合到用于接收RF输入信号的输入端子的控制电极，用于在输出端子处提供RF输出信号的第一电流电极和耦合到电源电压端子的第二电流电极。 去耦电路包括串联耦合在第一功率晶体管的控制电极和电源电压端之间的第一电感元件，第一电阻器和第一电容器。 第一个去耦电路用于衰减低于RF频率的频率的谐振。
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公开(公告)号：US20130033325A1
公开(公告)日：2013-02-07
申请号：US12746793
申请日：2010-04-22
IPC分类号： H03F3/16
CPC分类号： H03F1/3205 , H03F1/0211 , H03F1/0288 , H03F1/3247 , H03F1/42 , H03F1/565 , H03F3/04 , H03F3/193 , H03F3/21 , H03F3/211 , H03F3/265 , H03F2200/225 , H03F2200/391 , H03F2200/451 , H03F2203/21106
摘要： A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
摘要翻译： 射频（RF）功率晶体管电路包括功率晶体管和去耦电路。 功率晶体管具有耦合到用于接收RF输入信号的输入端子的控制电极，用于在输出端子处提供RF输出信号的第一电流电极和耦合到电源电压端子的第二电流电极。 去耦电路包括串联耦合在第一功率晶体管的控制电极和电源电压端之间的第一电感元件，第一电阻器和第一电容器。 第一个去耦电路用于衰减低于RF频率的频率的谐振。
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公开(公告)号：US09419566B2
公开(公告)日：2016-08-16
申请号：US14009099
申请日：2011-04-20
CPC分类号： H03F1/565 , H01L2224/49175 , H03F1/0288 , H03F3/195 , H03F3/21 , H03F3/68 , H03F2200/222 , H03F2200/387 , H03F2200/423 , H03F2200/451
摘要： Apparatus are provided for amplifier systems and related integrated circuits are provided. An exemplary integrated circuit includes a main amplifier arrangement, first impedance matching circuitry coupled between the output of the main amplifier arrangement and a first output of the integrated circuit, a peaking amplifier arrangement, and second impedance matching circuitry coupled between the output of the peaking amplifier arrangement and a second output of the integrated circuit. In one exemplary embodiment, the first impedance matching circuitry and the second impedance matching circuitry have different circuit topologies and different physical topologies.
摘要翻译： 提供放大器系统的装置，并提供相关的集成电路。 示例性集成电路包括主放大器布置，耦合在主放大器布置的输出和集成电路的第一输出之间的第一阻抗匹配电路，峰值放大器布置和耦合在峰值放大器的输出端之间的第二阻抗匹配电路 布置和集成电路的第二输出。 在一个示例性实施例中，第一阻抗匹配电路和第二阻抗匹配电路具有不同的电路拓扑和不同的物理拓扑。
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4.发明申请INTEGRATED PASSIVE DEVICE ASSEMBLIES FOR RF AMPLIFIERS, AND METHODS OF MANUFACTURE THEREOF 有权用于射频放大器的集成无源器件组件及其制造方法公开(公告)号：US20150381121A1
公开(公告)日：2015-12-31
申请号：US14317572
申请日：2014-06-27
IPC分类号： H03F3/19 , H01L25/16 , H01L49/02 , H03F3/21 , H01L23/31 , H01L23/04 , H01L23/00 , H03F1/56 , H01L25/00 , H01L21/56
CPC分类号： H03F3/21 , H01G4/385 , H01G4/40 , H01L23/047 , H01L23/481 , H01L23/488 , H01L23/66 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L25/50 , H01L2223/6611 , H01L2223/6655 , H01L2223/6672 , H01L2224/48091 , H01L2224/48111 , H01L2224/49052 , H01L2224/49175 , H01L2224/49433 , H01L2924/00014 , H01L2924/1205 , H01L2924/1206 , H01L2924/1207 , H01L2924/1304 , H01L2924/13091 , H01L2924/19104 , H03F1/565 , H03F3/193 , H03F3/195 , H03F2200/222 , H03F2200/387 , H03F2200/451 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/05599
摘要： An embodiment of an integrated passive device (IPD) assembly includes a first capacitor formed over a semiconductor substrate, where the first capacitor includes a first capacitor electrode, a second capacitor electrode, and dielectric material that electrically insulates the first capacitor electrode from the second capacitor electrode. The IPD assembly also includes a first contact pad exposed at a top surface of the IPD assembly and electrically coupled to the second capacitor electrode, and a second contact pad exposed at the top surface of the IPD. A second capacitor is coupled to the top surface of the IPD, and includes a first terminal electrically coupled to the first contact pad, and a second terminal electrically coupled to the second contact pad. The IPD assembly may be included in a packaged RF device, forming portions of an output impedance matching circuit and an envelope frequency termination circuit.
摘要翻译： 集成无源器件（IPD）组件的实施例包括形成在半导体衬底上的第一电容器，其中第一电容器包括第一电容器电极，第二电容器电极和将第一电容器电极与第二电容器电绝缘的电介质材料 电极。 IPD组件还包括暴露在IPD组件的顶表面处并电耦合到第二电容器电极的第一接触焊盘和暴露在IPD的顶表面处的第二接触焊盘。 第二电容器耦合到IPD的顶表面，并且包括电耦合到第一接触焊盘的第一端子和电耦合到第二接触焊盘的第二端子。 IPD组件可以包括在封装的RF器件中，形成输出阻抗匹配电路的一部分和封装频率终止电路。
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公开(公告)号：US08134241B2
公开(公告)日：2012-03-13
申请号：US13179295
申请日：2011-07-08
申请人： Jeffrey K. Jones , Margaret A. Szymanowski , Michele L. Miera , Xiaowei Ren , Wayne R. Burger , Mark A. Bennett , Colin Kerr
发明人： Jeffrey K. Jones , Margaret A. Szymanowski , Michele L. Miera , Xiaowei Ren , Wayne R. Burger , Mark A. Bennett , Colin Kerr
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L24/03 , H01L29/0649 , H01L2224/05076 , H01L2224/05558 , H01L2224/05576 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01027 , H01L2924/01032 , H01L2924/01033 , H01L2924/01057 , H01L2924/01082 , H01L2924/05042 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00
摘要： Electronic elements having an active device region and bonding pad (BP) region on a common substrate desirably include a dielectric region underlying the BP to reduce the parasitic impedance of the BP and its interconnection as the electronic elements are scaled to higher power and/or operating frequency. Mechanical stress created by plain (e.g., oxide only) dielectric regions can adversely affect performance, manufacturing yield, pad-to-device proximity and occupied area. This can be avoided by providing a composite dielectric region having electrically isolated inclusions of a thermal expansion coefficient (TEC) less than that of the dielectric material in which they are embedded and/or closer to the substrate TEC. For silicon substrates, poly or amorphous silicon is suitable for the inclusions and silicon oxide for the dielectric material. The inclusions preferably have a blade-like shape separated by and enclosed within the dielectric material.
摘要翻译： 在共同衬底上具有有源器件区域和焊盘（BP）区域的电子元件期望地包括位于BP之下的电介质区域，以在电子元件被缩放到更高功率和/或操作时降低BP的寄生阻抗及其互连 频率。 由平原（例如，仅氧化物）电介质区域产生的机械应力可能不利地影响性能，制造产量，焊盘到设备的接近度和占用面积。 这可以通过提供具有比它们被嵌入和/或更靠近衬底TEC的介电材料的热膨胀系数小的热膨胀系数（TEC）的电隔离夹杂物的复合电介质区域来避免。 对于硅衬底，聚硅或非晶硅适用于介电材料的夹杂物和氧化硅。 夹杂物优选具有由介电材料分离并封闭在电介质材料内的刀片状形状。
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公开(公告)号：US07378920B2
公开(公告)日：2008-05-27
申请号：US11354472
申请日：2006-02-14
申请人： Jeffrey K. Jones , Basim H. Noori
发明人： Jeffrey K. Jones , Basim H. Noori
IPC分类号： H03H7/38
CPC分类号： H03H7/38 , H01L2223/6655 , H03F1/565 , H03F3/191 , H03F2200/387 , H03F2200/391 , H03F2200/402 , H03F2200/451
摘要： An output match circuit is coupled between the terminal of a high-frequency device and a ground terminal. The output match circuit includes an LC shunt and an LC notch serially coupled to the LC shunt, wherein the LC notch includes a resonant capacitive element in series with a resonant inductive element. The LC notch may simply include a resonant inductive element coupled directly to the ground terminal. The series inductive element may have a terminal coupled between the resonant capacitive element and the resonant inductive element.
摘要翻译： 输出匹配电路耦合在高频器件的端子和接地端子之间。 输出匹配电路包括串联耦合到LC分流器的LC分路和LC陷波，其中LC陷波包括与谐振电感元件串联的谐振电容元件。 LC陷波可以简单地包括直接耦合到接地端子的谐振电感元件。 串联电感元件可以具有耦合在谐振电容元件和谐振电感元件之间的端子。
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7.发明授权Structure for a radio frequency power amplifier module within a radio frequency power amplifier package 有权射频功率放大器封装内的射频功率放大器模块的结构公开(公告)号：US09401682B2
公开(公告)日：2016-07-26
申请号：US14489868
申请日：2014-09-18
CPC分类号： H03F3/195 , H01L23/66 , H01L2224/05554 , H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2224/73265 , H01L2924/19107 , H03F1/086 , H03F1/301 , H03F3/213 , H03F3/245 , H03F2200/447 , H03F2200/451 , H01L2924/00014
摘要： A RF power amplifier module comprises a die with a RF power transistor and the RF power transistor comprises a control terminal, a transistor output terminal and a transistor reference terminal. The RF power amplifier module further comprises a module input terminal, a module output terminal and at least two module reference terminals being electrically coupled to the control terminal, the transistor output terminal and the transistor reference terminal, respectively. The RF power amplifier module further comprises an electrically isolating layer and a heat conducting element. The die is in thermal contact with the heat conducting element via the electrically isolating layer in order to transfer heat during operation of the RF power transistor to the heat conducting element.
摘要翻译： RF功率放大器模块包括具有RF功率晶体管的管芯，RF功率晶体管包括控制端子，晶体管输出端子和晶体管参考端子。 RF功率放大器模块还包括模块输入端子，模块输出端子和至少两个模块参考端子，其分别电耦合到控制端子，晶体管输出端子和晶体管参考端子。 RF功率放大器模块还包括电绝缘层和导热元件。 模具通过电绝缘层与导热元件热接触，以便在RF功率晶体管的操作期间将热量传递到导热元件。
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公开(公告)号：US20100140814A1
公开(公告)日：2010-06-10
申请号：US12328319
申请日：2008-12-04
申请人： Jeffrey K. Jones , Margaret A. Szymanowski , Michele L. Miera , Xiaowei Ren , Wayne R. Burger , Mark A. Bennett , Colin Kerr
发明人： Jeffrey K. Jones , Margaret A. Szymanowski , Michele L. Miera , Xiaowei Ren , Wayne R. Burger , Mark A. Bennett , Colin Kerr
IPC分类号： H01L21/768 , H01L23/488
CPC分类号： H01L24/05 , H01L24/03 , H01L29/0649 , H01L2224/05076 , H01L2224/05558 , H01L2224/05576 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01027 , H01L2924/01032 , H01L2924/01033 , H01L2924/01057 , H01L2924/01082 , H01L2924/05042 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00
摘要： Electronic elements (44, 44′, 44″) having an active device region (46) and bonding pad (BP) region (60) on a common substrate (45) desirably include a dielectric region underlying the BP (35) to reduce the parasitic impedance of the BP (35) and its interconnection (41) as the electronic elements (44, 44′, 44″) are scaled to higher power and/or operating frequency. Mechanical stress created by plain (e.g., oxide only) dielectric regions (36′) can adversely affect performance, manufacturing yield, pad-to-device proximity and occupied area. This can be avoided by providing a composite dielectric region (62, 62′, 62″) having electrically isolated inclusions (65, 65′, 65′) of a thermal expansion coefficient (TEC) less than that of the dielectric material (78, 78′, 78″) in which they are embedded and/or closer to the substrate (45) TEC. For silicon substrates (45), poly or amorphous silicon is suitable for the inclusions (65, 65′, 65″) and silicon oxide for the dielectric material (78, 78′, 78″). The inclusions (65, 65′, 65″) preferably have a blade-like shape separated by and enclosed within the dielectric material (78, 78′, 78″).
摘要翻译： 具有在公共衬底（45）上的有源器件区（46）和焊盘（BP）区（60）的电子元件（44,44'，44“）理想地包括位于BP（35）下方的电介质区域，以减少 作为电子元件（44,44'，44“）的BP（35）及其互连（41）的寄生阻抗被缩放到更高的功率和/或工作频率。 由平坦（例如，仅氧化物）介电区域（36'）产生的机械应力可能不利地影响性能，制造产量，焊盘到设备的接近度和占用面积。 这可以通过提供具有电绝缘的包含物（65,65'，65'）的复合电介质区域（65,65'，65'）来避免，所述电绝缘夹杂物的热膨胀系数（TEC）小于电介质材料（78， 78'，78“），其中它们被嵌入和/或更靠近衬底（45）TEC。 对于硅衬底（45），多晶硅或非晶硅适合用于介电材料（78,78'，78“）的夹杂物（65,65'，65”）和氧化硅。 夹杂物（65,65'，65“）优选具有由电介质材料（78,78'，78”）分隔开并封闭在其中的刀片形状。
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公开(公告)号：US09225300B2
公开(公告)日：2015-12-29
申请号：US14265849
申请日：2014-04-30
CPC分类号： H03F1/56 , H03F3/19 , H03F3/191 , H03F3/193 , H03F3/21 , H03F3/211 , H03F2200/222 , H03F2200/318 , H03F2200/451
摘要： A multiple-path, configurable, radio-frequency (RF) circuit is provided, including: a first amplifier path amplify a first RF signal to generate a first amplified signal; a second amplifier path configured to amplify a second RF signal to generate a second amplified signal; a corrective input matching circuit, configured to change first input-impedance-matching properties of the first amplifier path, and to change second input-impedance-matching properties of the second amplifier path; a first isolation element configured to selectively ground an input node of the second amplifier path; a second isolation element configured to selectively ground an output node of the second amplifier path; and a third isolation element connected between the first and second amplifier paths, configured to selectively isolate the corrective input matching circuit from first and second input nodes of the first and second amplifier paths, respectively, or connect the corrective input matching circuit to the first and second input nodes.
摘要翻译： 提供多路径，可配置的射频（RF）电路，包括：第一放大器路径放大第一RF信号以产生第一放大信号; 第二放大器路径，被配置为放大第二RF信号以产生第二放大信号; 校正输入匹配电路，被配置为改变第一放大器路径的第一输入阻抗匹配特性，并改变第二放大器路径的第二输入阻抗匹配特性; 第一隔离元件，被配置为选择性地接地第二放大器路径的输入节点; 第二隔离元件，被配置为选择性地接地所述第二放大器路径的输出节点; 以及连接在第一和第二放大器路径之间的第三隔离元件，被配置为分别将校正输入匹配电路与第一和第二放大器路径的第一和第二输入节点分离，或将校正输入匹配电路连接到第一和第二放大器路径 第二输入节点。
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公开(公告)号：US20150262961A1
公开(公告)日：2015-09-17
申请号：US14204340
申请日：2014-03-11
IPC分类号： H01L23/00 , H01L29/861 , H01L23/64 , H01L27/07 , H01L21/822 , H01L49/02 , H01L27/06
CPC分类号： H01L24/48 , H01L21/822 , H01L22/14 , H01L23/642 , H01L23/647 , H01L24/43 , H01L24/45 , H01L27/0676 , H01L27/0794 , H01L28/20 , H01L2224/05578 , H01L2224/05599 , H01L2224/13028 , H01L2224/1613 , H01L2224/438 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4801 , H01L2224/48011 , H01L2224/4813 , H01L2224/4847 , H01L2224/85399 , H01L2224/85423 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/1203 , H01L2924/1205 , H01L2924/1207 , H01L2924/20658 , H01L2924/30107 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756
摘要： A semiconductor device includes a substrate, first and second bond pad structures supported by the substrate and spaced from one another by a gap, and a wire bond foot jumper extending across the gap and bonded to the first and second bond pad structures.
摘要翻译： 半导体器件包括衬底，由衬底支撑并且通过间隙彼此间隔开的第一和第二接合焊盘结构，以及跨越间隙延伸并结合到第一和第二接合焊盘结构的引线接合脚跨接件。
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