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公开(公告)号：US09419566B2
公开(公告)日：2016-08-16
申请号：US14009099
申请日：2011-04-20
CPC分类号： H03F1/565 , H01L2224/49175 , H03F1/0288 , H03F3/195 , H03F3/21 , H03F3/68 , H03F2200/222 , H03F2200/387 , H03F2200/423 , H03F2200/451
摘要： Apparatus are provided for amplifier systems and related integrated circuits are provided. An exemplary integrated circuit includes a main amplifier arrangement, first impedance matching circuitry coupled between the output of the main amplifier arrangement and a first output of the integrated circuit, a peaking amplifier arrangement, and second impedance matching circuitry coupled between the output of the peaking amplifier arrangement and a second output of the integrated circuit. In one exemplary embodiment, the first impedance matching circuitry and the second impedance matching circuitry have different circuit topologies and different physical topologies.
摘要翻译： 提供放大器系统的装置，并提供相关的集成电路。 示例性集成电路包括主放大器布置，耦合在主放大器布置的输出和集成电路的第一输出之间的第一阻抗匹配电路，峰值放大器布置和耦合在峰值放大器的输出端之间的第二阻抗匹配电路 布置和集成电路的第二输出。 在一个示例性实施例中，第一阻抗匹配电路和第二阻抗匹配电路具有不同的电路拓扑和不同的物理拓扑。
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公开(公告)号：US08659359B2
公开(公告)日：2014-02-25
申请号：US12746793
申请日：2010-04-22
IPC分类号： H03F3/04
CPC分类号： H03F1/3205 , H03F1/0211 , H03F1/0288 , H03F1/3247 , H03F1/42 , H03F1/565 , H03F3/04 , H03F3/193 , H03F3/21 , H03F3/211 , H03F3/265 , H03F2200/225 , H03F2200/391 , H03F2200/451 , H03F2203/21106
摘要： A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
摘要翻译： 射频（RF）功率晶体管电路包括功率晶体管和去耦电路。 功率晶体管具有耦合到用于接收RF输入信号的输入端子的控制电极，用于在输出端子处提供RF输出信号的第一电流电极和耦合到电源电压端子的第二电流电极。 去耦电路包括串联耦合在第一功率晶体管的控制电极和电源电压端之间的第一电感元件，第一电阻器和第一电容器。 第一个去耦电路用于衰减低于RF频率的频率的谐振。
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公开(公告)号：US20130033325A1
公开(公告)日：2013-02-07
申请号：US12746793
申请日：2010-04-22
IPC分类号： H03F3/16
CPC分类号： H03F1/3205 , H03F1/0211 , H03F1/0288 , H03F1/3247 , H03F1/42 , H03F1/565 , H03F3/04 , H03F3/193 , H03F3/21 , H03F3/211 , H03F3/265 , H03F2200/225 , H03F2200/391 , H03F2200/451 , H03F2203/21106
摘要： A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
摘要翻译： 射频（RF）功率晶体管电路包括功率晶体管和去耦电路。 功率晶体管具有耦合到用于接收RF输入信号的输入端子的控制电极，用于在输出端子处提供RF输出信号的第一电流电极和耦合到电源电压端子的第二电流电极。 去耦电路包括串联耦合在第一功率晶体管的控制电极和电源电压端之间的第一电感元件，第一电阻器和第一电容器。 第一个去耦电路用于衰减低于RF频率的频率的谐振。
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