公开(公告)号：US11843063B2

公开(公告)日：2023-12-12

申请号：US12812910

申请日：2008-11-13

申请人： Hwa Nyeon Kim ,  Ju Hwan Yun ,  Jong Hwan Kim ,  Bum Sung Kim ,  Il Hyoung Jung ,  Jin Ah Kim

发明人： Hwa Nyeon Kim ,  Ju Hwan Yun ,  Jong Hwan Kim ,  Bum Sung Kim ,  Il Hyoung Jung ,  Jin Ah Kim

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/0236

CPC分类号： H01L31/022441 ,  H01L31/0236 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/50

摘要： The present invention discloses a back contact solar cell comprising: a first conductive type semiconductor substrate having a front surface and a rear surface of a texturing structure; an oxide layer formed on the front surface of the substrate; at least one first conductive type semiconductor region and second conductive type semiconductor region alternatively formed at predetermined intervals on the rear surface of the substrate; an oxide layer formed on the remaining rear surface of the substrate except for the first conductive type semiconductor region and the second conductive type semiconductor region; and electrodes formed on each of the first conductive type semiconductor region and the second conductive type semiconductor region.

公开(公告)号：US20110100457A1

公开(公告)日：2011-05-05

申请号：US12812910

申请日：2008-11-13

申请人： Hwa Nyeon Kim ,  Ju Hwan Yun ,  Jong Hwan Kim ,  Bum Sung Kim ,  Ii Hyoung Jung ,  Jin Ah Kim

发明人： Hwa Nyeon Kim ,  Ju Hwan Yun ,  Jong Hwan Kim ,  Bum Sung Kim ,  Ii Hyoung Jung ,  Jin Ah Kim

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/02168 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention discloses a back contact solar cell comprising: a first conductive type semiconductor substrate having a front surface and a rear surface of a texturing structure; an oxide layer formed on the front surface of the substrate; at least one first conductive type semiconductor region and second conductive type semiconductor region alternatively formed at predetermined intervals on the rear surface of the substrate; an oxide layer formed on the remaining rear surface of the substrate except for the first conductive type semiconductor region and the second conductive type semiconductor region; and electrodes formed on each of the first conductive type semiconductor region and the second conductive type semiconductor region.

摘要翻译： 本发明公开了一种背接触太阳能电池，包括：具有纹理结构的前表面和后表面的第一导电类型半导体衬底; 形成在所述基板的前表面上的氧化物层; 至少一个第一导电类型半导体区域和第二导电类型半导体区域，其间隔地以预定的间隔形成在所述衬底的后表面上; 形成在除了第一导电型半导体区域和第二导电型半导体区域之外的基板的剩余背面上的氧化物层; 以及形成在第一导电类型半导体区域和第二导电类型半导体区域中的每一个上的电极。

公开(公告)号：US20080245415A1

公开(公告)日：2008-10-09

申请号：US12098276

申请日：2008-04-04

申请人： Hwa Nyeon Kim ,  Bum Sung Kim ,  Hae Seok Lee ,  Jung Heum Yun ,  Heon Min Lee

发明人： Hwa Nyeon Kim ,  Bum Sung Kim ,  Hae Seok Lee ,  Jung Heum Yun ,  Heon Min Lee

IPC分类号： H01L31/0264 ,  H01L31/0376 ,  H01L31/18

CPC分类号： H01L31/0745 ,  H01L31/028 ,  H01L31/075 ,  Y02E10/547 ,  Y02E10/548

摘要： A photoelectric conversion device includes at least one p-type semiconductor layer made of amorphous like hydrogenated carbon film or diamond like carbon (DLC) film doped with acceptor impurities such as boron (B). In a solar cell having a photoelectric conversion region, hydrogenated carbon is used as substances forming a p-type semiconductor layer, making it possible to provide a solar cell with high photoelectric conversion efficiency.

摘要翻译： 光电转换装置包括至少一个由诸如硼（B）等掺杂有受主杂质的无定形氢化碳膜或类金刚石碳（DLC）膜制成的p型半导体层。 在具有光电转换区域的太阳能电池中，使用氢化碳作为形成p型半导体层的物质，能够提供高的光电转换效率的太阳能电池。