公开(公告)号：US08604478B2

公开(公告)日：2013-12-10

申请号：US13168769

申请日：2011-06-24

申请人： Hye-Young Ryu ,  Jang-Soo Kim ,  Su-Hyoung Kang

发明人： Hye-Young Ryu ,  Jang-Soo Kim ,  Su-Hyoung Kang

IPC分类号： H01L29/04

CPC分类号： G02F1/136227 ,  G02F2001/136222 ,  H01L27/3258

摘要： In a thin-film transistor (TFT) substrate, a gate insulating layer is disposed on a gate electrode electrically connected to a gate line. A semiconductor layer is disposed on the gate insulating layer. A source electrode is electrically connected to a data line that intersects the gate line. A drain electrode faces the source electrode and defines a channel area of a semiconductor layer. An organic layer is disposed on the data line and has a first opening exposing the channel area. An inorganic insulating layer is disposed on the organic layer. A pixel electrode is disposed on the inorganic insulating layer and electrically connected to the drain electrode. The inorganic insulating layer covers the first opening, and thickness of the inorganic insulating layer is substantially uniform.

摘要翻译： 在薄膜晶体管（TFT）基板中，栅极绝缘层设置在与栅极线电连接的栅电极上。 半导体层设置在栅极绝缘层上。 源极电极与与栅极线相交的数据线电连接。 漏电极面对源电极并限定半导体层的沟道面积。 有机层设置在数据线上，并且具有暴露通道区域的第一开口。 无机绝缘层设置在有机层上。 像素电极设置在无机绝缘层上并与漏电极电连接。 无机绝缘层覆盖第一开口，无机绝缘层的厚度基本均匀。

公开(公告)号：US20110254007A1

公开(公告)日：2011-10-20

申请号：US13168769

申请日：2011-06-24

申请人： Hye-Young RYU ,  Jang-Soo Kim ,  Su-Hyoung Kang

发明人： Hye-Young RYU ,  Jang-Soo Kim ,  Su-Hyoung Kang

IPC分类号： H01L33/08

CPC分类号： G02F1/136227 ,  G02F2001/136222 ,  H01L27/3258

摘要： In a thin-film transistor (TFT) substrate, a gate insulating layer is disposed on a gate electrode electrically connected to a gate line. A semiconductor layer is disposed on the gate insulating layer. A source electrode is electrically connected to a data line that intersects the gate line. A drain electrode faces the source electrode and defines a channel area of a semiconductor layer. An organic layer is disposed on the data line and has a first opening exposing the channel area. An inorganic insulating layer is disposed on the organic layer. A pixel electrode is disposed on the inorganic insulating layer and electrically connected to the drain electrode. The inorganic insulating layer covers the first opening, and thickness of the inorganic insulating layer is substantially uniform.

摘要翻译： 在薄膜晶体管（TFT）基板中，栅极绝缘层设置在与栅极线电连接的栅电极上。 半导体层设置在栅极绝缘层上。 源极电极与与栅极线相交的数据线电连接。 漏电极面对源电极并限定半导体层的沟道面积。 有机层设置在数据线上，并且具有暴露通道区域的第一开口。 无机绝缘层设置在有机层上。 像素电极设置在无机绝缘层上并与漏电极电连接。 无机绝缘层覆盖第一开口，无机绝缘层的厚度基本均匀。

公开(公告)号：US08013945B2

公开(公告)日：2011-09-06

申请号：US12005904

申请日：2007-12-27

申请人： Kyoung-Ju Shin ,  Shi-Yul Kim ,  Hye-Young Ryu ,  Mee-Hye Jung ,  Jang-Soo Kim ,  Su-Hyoung Kang

发明人： Kyoung-Ju Shin ,  Shi-Yul Kim ,  Hye-Young Ryu ,  Mee-Hye Jung ,  Jang-Soo Kim ,  Su-Hyoung Kang

IPC分类号： G02F1/1343 ,  H01L29/04

CPC分类号： G02F1/136209 ,  G02F1/133512 ,  G02F1/133707 ,  G02F1/136286 ,  G02F2001/136222

摘要： A display substrate includes a gate line, a gate insulating layer, a data line, a thin-film transistor (TFT), a storage line, a passivation layer, a color filter layer, a pixel electrode, a first light-blocking layer and a second light-blocking layer. The storage line includes the same material as the gate line. The passivation layer covers the data line. The color filter layer is formed on the passivation layer. The pixel electrode is formed on the color filter layer in each pixel. The first light-blocking layer is formed between adjacent pixel electrodes, and includes the same material as the gate line. The second light-blocking layer is formed between the first light-blocking layer, and includes the same material as the data line. Therefore, an aperture ratio may be increased.

摘要翻译： 显示基板包括栅极线，栅极绝缘层，数据线，薄膜晶体管（TFT），存储线，钝化层，滤色器层，像素电极，第一遮光层和 第二遮光层。 存储线包括与栅极线相同的材料。 钝化层覆盖数据线。 滤色层在钝化层上形成。 像素电极形成在每个像素中的滤色器层上。 第一遮光层形成在相邻的像素电极之间，并且包括与栅极线相同的材料。 第二遮光层形成在第一遮光层之间，并且包括与数据线相同的材料。 因此，可以增加开口率。

公开(公告)号：US07977677B2

公开(公告)日：2011-07-12

申请号：US11840161

申请日：2007-08-16

申请人： Hye-Young Ryu ,  Jang-Soo Kim ,  Su-Hyoung Kang

发明人： Hye-Young Ryu ,  Jang-Soo Kim ,  Su-Hyoung Kang

IPC分类号： H01L29/04

CPC分类号： G02F1/136227 ,  G02F2001/136222 ,  H01L27/3258

摘要： In a thin-film transistor (TFT) substrate, a gate insulating layer is disposed on a gate electrode electrically connected to a gate line. A semiconductor layer is disposed on the gate insulating layer. A source electrode is electrically connected to a data line that intersects the gate line. A drain electrode faces the source electrode and defines a channel area of a semiconductor layer. An organic layer is disposed on the data line and has a first opening exposing the channel area. An inorganic insulating layer is disposed on the organic layer. A pixel electrode is disposed on the inorganic insulating layer and electrically connected to the drain electrode. The inorganic insulating layer covers the first opening, and thickness of the inorganic insulating layer is substantially uniform.

摘要翻译： 在薄膜晶体管（TFT）基板中，栅极绝缘层设置在与栅极线电连接的栅电极上。 半导体层设置在栅极绝缘层上。 源极电极与与栅极线相交的数据线电连接。 漏电极面对源电极并限定半导体层的沟道面积。 有机层设置在数据线上，并且具有暴露通道区域的第一开口。 无机绝缘层设置在有机层上。 像素电极设置在无机绝缘层上并与漏电极电连接。 无机绝缘层覆盖第一开口，无机绝缘层的厚度基本均匀。

公开(公告)号：US20080042135A1

公开(公告)日：2008-02-21

申请号：US11840161

申请日：2007-08-16

申请人： Hye-Young RYU ,  Jang-Soo Kim ,  Su-Hyoung Kang

发明人： Hye-Young RYU ,  Jang-Soo Kim ,  Su-Hyoung Kang

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： G02F1/136227 ,  G02F2001/136222 ,  H01L27/3258

摘要： In a thin-film transistor (TFT) substrate, a gate insulating layer is disposed on a gate electrode electrically connected to a gate line. A semiconductor layer is disposed on the gate insulating layer. A source electrode is electrically connected to a data line that intersects the gate line. A drain electrode faces the source electrode and defines a channel area of a semiconductor layer. An organic layer is disposed on the data line and has a first opening exposing the channel area. An inorganic insulating layer is disposed on the organic layer. A pixel electrode is disposed on the inorganic insulating layer and electrically connected to the drain electrode. The inorganic insulating layer covers the first opening, and thickness of the inorganic insulating layer is substantially uniform.

摘要翻译： 在薄膜晶体管（TFT）基板中，栅极绝缘层设置在与栅极线电连接的栅电极上。 半导体层设置在栅极绝缘层上。 源极电极与与栅极线相交的数据线电连接。 漏电极面对源电极并限定半导体层的沟道面积。 有机层设置在数据线上，并且具有暴露通道区域的第一开口。 无机绝缘层设置在有机层上。 像素电极设置在无机绝缘层上并与漏电极电连接。 无机绝缘层覆盖第一开口，无机绝缘层的厚度基本均匀。

公开(公告)号：US20080211980A1

公开(公告)日：2008-09-04

申请号：US12005904

申请日：2007-12-27

申请人： Kyoung-Ju Shin ,  Shi-Yul Kim ,  Hye-Young Ryu ,  Mee-Hye Jung ,  Jang-Soo Kim ,  Su-Hyoung Kang

发明人： Kyoung-Ju Shin ,  Shi-Yul Kim ,  Hye-Young Ryu ,  Mee-Hye Jung ,  Jang-Soo Kim ,  Su-Hyoung Kang

IPC分类号： G02F1/1343 ,  H01L29/04

CPC分类号： G02F1/136209 ,  G02F1/133512 ,  G02F1/133707 ,  G02F1/136286 ,  G02F2001/136222

摘要： A display substrate includes a gate line, a gate insulating layer, a data line, a thin-film transistor (TFT), a storage line, a passivation layer, a color filter layer, a pixel electrode, a first light-blocking layer and a second light-blocking layer. The storage line includes the same material as the gate line. The passivation layer covers the data line. The color filter layer is formed on the passivation layer. The pixel electrode is formed on the color filter layer in each pixel. The first light-blocking layer is formed between adjacent pixel electrodes, and includes the same material as the gate line. The second light-blocking layer is formed between the first light-blocking layer, and includes the same material as the data line. Therefore, an aperture ratio may be increased.

摘要翻译： 显示基板包括栅极线，栅极绝缘层，数据线，薄膜晶体管（TFT），存储线，钝化层，滤色器层，像素电极，第一遮光层和 第二遮光层。 存储线包括与栅极线相同的材料。 钝化层覆盖数据线。 滤色层在钝化层上形成。 像素电极形成在每个像素中的滤色器层上。 第一遮光层形成在相邻的像素电极之间，并且包括与栅极线相同的材料。 第二遮光层形成在第一遮光层之间，并且包括与数据线相同的材料。 因此，可以增加开口率。

公开(公告)号：US20080203393A1

公开(公告)日：2008-08-28

申请号：US12099718

申请日：2008-04-08

申请人： Sang-Gab KIM ,  Woo-Geun Lee ,  Shi-Yul Kim ,  Jin-Ho Ju ,  Jang-Soo Kim ,  Sang-Woo Whangbo ,  Min-Seok Oh ,  Hye-Young Ryu ,  Hong-Kee Chin

发明人： Sang-Gab KIM ,  Woo-Geun Lee ,  Shi-Yul Kim ,  Jin-Ho Ju ,  Jang-Soo Kim ,  Sang-Woo Whangbo ,  Min-Seok Oh ,  Hye-Young Ryu ,  Hong-Kee Chin

IPC分类号： H01L27/088

CPC分类号： H01L27/124 ,  G02F2001/13629 ,  H01L29/458

摘要： The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.

摘要翻译： 本发明提供一种薄膜晶体管阵列面板的制造方法，其包括在基板上形成栅极线; 在栅极线上形成栅极绝缘层，半导体层和欧姆接触; 形成包括Mo的第一导电膜，包括Al的第二导电膜和在欧姆接触上包含Mo的第三导电膜; 在所述第三导电膜上形成第一光致抗蚀剂图案; 使用第一光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜，欧姆接触和半导体层; 将第一光致抗蚀剂图案去除预定厚度以形成第二光致抗蚀剂图案; 使用第二光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜以暴露欧姆接触的一部分; 并使用含Cl气体和含F气体蚀刻暴露的欧姆接触。

公开(公告)号：US07405798B2

公开(公告)日：2008-07-29

申请号：US10768333

申请日：2004-01-30

申请人： Young-Hoon Yoo ,  Jang-Soo Kim ,  Hye-Young Ryu

发明人： Young-Hoon Yoo ,  Jang-Soo Kim ,  Hye-Young Ryu

IPC分类号： G02F1/1339 ,  G02F1/1345

CPC分类号： G02F1/1339 ,  G02F1/133516 ,  G02F1/1345

摘要： A liquid crystal display device including a first substrate, a common electrode formed over the first substrate, and a second substrate disposed opposite the first substrate. A common voltage-applying member applies a common voltage to the common electrode and maintains a cell gap between the first substrate and the second substrate. The common voltage-applying member includes an insulator and a conductor formed over the insulator.

摘要翻译： 一种液晶显示装置，包括第一基板，形成在第一基板上的公共电极以及与第一基板相对设置的第二基板。 公共电压施加部件向公共电极施加公共电压，并且在第一基板和第二基板之间保持单元间隙。 公共电压施加构件包括绝缘体和形成在绝缘体上的导体。

公开(公告)号：US20060054889A1

公开(公告)日：2006-03-16

申请号：US10942039

申请日：2004-09-16

申请人： Jang-Soo Kim ,  Hyang-Shik Kong ,  Hye-Young Ryu ,  Sung-Man Kim

发明人： Jang-Soo Kim ,  Hyang-Shik Kong ,  Hye-Young Ryu ,  Sung-Man Kim

IPC分类号： H01L29/04

CPC分类号： H01L27/124 ,  G02F1/136213 ,  G02F1/136259 ,  G02F2001/13629 ,  H01L27/1255 ,  H01L27/1288

摘要： A thin film transistor array panel comprising: an insulating substrate; a plurality of gate lines formed on the insulating substrate and including a plurality of gate electrodes and end portions; a plurality of storage electrode lines formed on the insulating substrate; a gate insulating layer formed on the gate lines and storage electrode lines; a semiconductor layer formed on the gate insulating layer; a ohmic contact layer formed on the semiconductor layer; a plurality of data lines formed on the gate insulating layer, intersecting the gate lines to define a display area, and having source electrodes and end portions; a plurality of drain electrodes facing the source electrodes; a passivation layer formed on the data lines and drain electrodes and having contact holes; a plurality of pixel electrodes formed on the passivation layer and connected to the drain electrodes through the contact holes; a storage line connecting bar connecting the storage electrode lines; and a redundant connecting line connecting the storage electrode lines is provided.

摘要翻译： 1.一种薄膜晶体管阵列面板，包括：绝缘基板; 多个栅极线，形成在所述绝缘基板上并且包括多个栅电极和端部; 形成在所述绝缘基板上的多个存储电极线; 形成在栅极线和存储电极线上的栅极绝缘层; 形成在所述栅极绝缘层上的半导体层; 形成在所述半导体层上的欧姆接触层; 形成在所述栅极绝缘层上的多条数据线，与所述栅极线交叉以限定显示区域，并具有源电极和端部; 面对所述源电极的多个漏电极; 形成在数据线和漏电极上并具有接触孔的钝化层; 多个像素电极，形成在钝化层上并通过接触孔连接到漏电极; 连接存储电极线的存储线连接条; 并且提供连接存储电极线的冗余连接线。

公开(公告)号：US07777858B2

公开(公告)日：2010-08-17

申请号：US11556468

申请日：2006-11-03

申请人： Young-Hoon Yoo ,  Jang-Soo Kim ,  Hye-Young Ryu

发明人： Young-Hoon Yoo ,  Jang-Soo Kim ,  Hye-Young Ryu

IPC分类号： G02F1/1339

CPC分类号： G02F1/1339 ,  G02F1/133516 ,  G02F1/1345

摘要： A liquid crystal display device including a first substrate, a common electrode formed over the first substrate, and a second substrate disposed opposite the first substrate. A common voltage-applying member applies a common voltage to the common electrode and maintains a cell gap between the first substrate and the second substrate. The common voltage-applying member includes an insulator and a conductor formed over the insulator.

摘要翻译： 一种液晶显示装置，包括第一基板，形成在第一基板上的公共电极以及与第一基板相对设置的第二基板。 公共电压施加部件向公共电极施加公共电压，并且在第一基板和第二基板之间保持单元间隙。 公共电压施加构件包括绝缘体和形成在绝缘体上的导体。