公开(公告)号：US08173358B2

公开(公告)日：2012-05-08

申请号：US12432357

申请日：2009-04-29

申请人： Hyoung-hee Kim ,  Yool Kang ,  Seong-woon Choi ,  Jin-young Yoon

发明人： Hyoung-hee Kim ,  Yool Kang ,  Seong-woon Choi ,  Jin-young Yoon

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40

CPC分类号： H01L21/0273 ,  Y10S430/106 ,  Y10S430/114

摘要： A method of forming fine patterns of a semiconductor device includes forming a plurality of first mask patterns on a substrate such that the plurality of first mask patterns are separated from one another by a space located therebetween, in a direction parallel to a main surface of the substrate, forming a plurality of capping films formed of a first material having a first solubility in a solvent on sidewalls and a top surface of the plurality of first mask patterns. The method further includes forming a second mask layer formed of a second material having a second solubility in the solvent, which is less than the first solubility, so as to fill the space located between the plurality of first mask patterns, and forming a plurality of second mask patterns corresponding to residual portions of the second mask layer which remain in the space located between the plurality of first mask patterns, after removing the plurality of capping films and a portion of the second mask layer using the solvent.

摘要翻译： 一种形成半导体器件的精细图案的方法包括在衬底上形成多个第一掩模图案，使得多个第一掩模图案在平行于所述第一掩模图案的主表面的方向上彼此分开位于其间的空间 形成多个由第一材料形成的封盖膜，该第一材料在溶剂中具有第一溶解性，并且在多个第一掩模图案的侧壁和顶表面上形成。 该方法还包括形成由溶剂中第二溶解度小于第一溶解度的第二材料形成的第二掩模层，以填充位于多个第一掩模图案之间的空间，并形成多个 第二掩模图案对应于残留在位于多个第一掩模图案之间的空间中的第二掩模层的残留部分，在使用溶剂除去多个封盖膜和第二掩模层的一部分之后。

公开(公告)号：US20150340246A1

公开(公告)日：2015-11-26

申请号：US14712920

申请日：2015-05-15

申请人： Sang-yoon Woo ,  Hyun-woo Kim ,  Ju-hyung An ,  Jin-young Yoon

发明人： Sang-yoon Woo ,  Hyun-woo Kim ,  Ju-hyung An ,  Jin-young Yoon

IPC分类号： H01L21/3213 ,  G03F7/34 ,  G03F7/20 ,  G03F7/32 ,  H01L21/033 ,  G03F7/16

CPC分类号： H01L21/32139 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/34 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144 ,  H01L27/10894

摘要： A method of forming patterns may use an organic reflection-preventing film including a polymer having an acid-liable group. A photoresist film is formed on the organic reflection-preventing film. A first area selected from the photoresist film is exposed to generate an acid in the first area. Hydrophilicity of a first surface of the organic reflection-preventing film facing the first area of the photoresist film may be increased. The photoresist film including the exposed first area is developed to remove a non-exposed area of the photoresist film. The organic reflection-preventing film and a target layer are anisotropically etched by using the first area of the photoresist film as an etch mask.

摘要翻译： 形成图案的方法可以使用包含具有酸性基团的聚合物的有机反射防止膜。 在有机防反射膜上形成光致抗蚀剂膜。 从光致抗蚀剂膜选择的第一区域被暴露以在第一区域中产生酸。 可以增加面向光致抗蚀剂膜的第一区域的有机防反射膜的第一表面的亲水性。 显影包括曝光的第一区域的光致抗蚀剂膜以除去光致抗蚀剂膜的未曝光区域。 通过使用光致抗蚀剂膜的第一区域作为蚀刻掩模，各向异性蚀刻有机反射防止膜和目标层。