公开(公告)号：US20150340246A1

公开(公告)日：2015-11-26

申请号：US14712920

申请日：2015-05-15

申请人： Sang-yoon Woo ,  Hyun-woo Kim ,  Ju-hyung An ,  Jin-young Yoon

发明人： Sang-yoon Woo ,  Hyun-woo Kim ,  Ju-hyung An ,  Jin-young Yoon

IPC分类号： H01L21/3213 ,  G03F7/34 ,  G03F7/20 ,  G03F7/32 ,  H01L21/033 ,  G03F7/16

CPC分类号： H01L21/32139 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/34 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144 ,  H01L27/10894

摘要： A method of forming patterns may use an organic reflection-preventing film including a polymer having an acid-liable group. A photoresist film is formed on the organic reflection-preventing film. A first area selected from the photoresist film is exposed to generate an acid in the first area. Hydrophilicity of a first surface of the organic reflection-preventing film facing the first area of the photoresist film may be increased. The photoresist film including the exposed first area is developed to remove a non-exposed area of the photoresist film. The organic reflection-preventing film and a target layer are anisotropically etched by using the first area of the photoresist film as an etch mask.

摘要翻译： 形成图案的方法可以使用包含具有酸性基团的聚合物的有机反射防止膜。 在有机防反射膜上形成光致抗蚀剂膜。 从光致抗蚀剂膜选择的第一区域被暴露以在第一区域中产生酸。 可以增加面向光致抗蚀剂膜的第一区域的有机防反射膜的第一表面的亲水性。 显影包括曝光的第一区域的光致抗蚀剂膜以除去光致抗蚀剂膜的未曝光区域。 通过使用光致抗蚀剂膜的第一区域作为蚀刻掩模，各向异性蚀刻有机反射防止膜和目标层。

公开(公告)号：US20100093172A1

公开(公告)日：2010-04-15

申请号：US12432357

申请日：2009-04-29

申请人： Hyoung-hee KIM ,  Yool KANG ,  Seong-woon CHOI ,  Jin-young YOON

发明人： Hyoung-hee KIM ,  Yool KANG ,  Seong-woon CHOI ,  Jin-young YOON

IPC分类号： H01L21/308 ,  H01L21/312

CPC分类号： H01L21/0273 ,  Y10S430/106 ,  Y10S430/114

摘要： A method of forming fine patterns of a semiconductor device includes forming a plurality of first mask patterns on a substrate such that the plurality of first mask patterns are separated from one another by a space located therebetween, in a direction parallel to a main surface of the substrate, forming a plurality of capping films formed of a first material having a first solubility in a solvent on sidewalls and a top surface of the plurality of first mask patterns. The method further includes forming a second mask layer formed of a second material having a second solubility in the solvent, which is less than the first solubility, so as to fill the space located between the plurality of first mask patterns, and forming a plurality of second mask patterns corresponding to residual portions of the second mask layer which remain in the space located between the plurality of first mask patterns, after removing the plurality of capping films and a portion of the second mask layer using the solvent.

摘要翻译： 一种形成半导体器件的精细图案的方法包括在衬底上形成多个第一掩模图案，使得多个第一掩模图案在平行于所述第一掩模图案的主表面的方向上彼此分开位于其间的空间 形成多个由第一材料形成的封盖膜，该第一材料在溶剂中具有第一溶解性，并且在多个第一掩模图案的侧壁和顶表面上形成。 该方法还包括形成由溶剂中第二溶解度小于第一溶解度的第二材料形成的第二掩模层，以填充位于多个第一掩模图案之间的空间，并形成多个 第二掩模图案对应于残留在位于多个第一掩模图案之间的空间中的第二掩模层的残留部分，在使用溶剂除去多个封盖膜和第二掩模层的一部分之后。

公开(公告)号：US20080131817A1

公开(公告)日：2008-06-05

申请号：US11983993

申请日：2007-11-13

申请人： Jin-Young Yoon ,  Hyun-Woo Kim ,  Chan Hwang ,  Yun-Kyeong Jang

发明人： Jin-Young Yoon ,  Hyun-Woo Kim ,  Chan Hwang ,  Yun-Kyeong Jang

IPC分类号： G03F7/20 ,  H01L23/20 ,  H01L21/54

CPC分类号： G03F7/70916 ,  G03F7/70341

摘要： Provided herein are gettering members that include a monitor substrate and a conditioning layer thereon. Also provided herein are methods of forming gettering layers and methods of performing immersion lithography processes using the same.

摘要翻译： 本文提供了包括监测器基板和其上的调理层的吸气构件。 本文还提供了形成吸气层的方法和使用其进行浸渍光刻工艺的方法。

公开(公告)号：US20050227492A1

公开(公告)日：2005-10-13

申请号：US11092003

申请日：2005-03-29

申请人： Jung-Hwan Hah ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Mitsuhiro Hata ,  Kolake Subramanya ,  Sang-Gyun Woo

发明人： Jung-Hwan Hah ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Mitsuhiro Hata ,  Kolake Subramanya ,  Sang-Gyun Woo

IPC分类号： G03F7/40 ,  G03F7/004 ,  G03F7/16 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC分类号： G03F7/40 ,  B82Y30/00 ,  G03F7/165 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139

摘要： Provided are a mask pattern including a self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on at least a sidewall of the resist pattern. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.

摘要翻译： 提供了包括自组装分子层的掩模图案，其形成方法和制造半导体器件的方法。 掩模图案包括形成在半导体衬底上的抗蚀剂图案和形成在抗蚀图案的至少侧壁上的自组装分子层。 为了形成掩模图案，首先，在覆盖基板的下层上形成抗蚀剂图案，使底层暴露于第一宽度。 然后，在抗蚀剂图案的表面上选择性地形成自组装分子层，以使底层暴露于小于第一宽度的第二宽度。 使用抗蚀剂图案和自组装分子层作为蚀刻掩模来蚀刻底层以获得精细图案。

公开(公告)号：US06103617A

公开(公告)日：2000-08-15

申请号：US320554

申请日：1999-05-27

申请人： Jin Young Yoon ,  Young Chul Kim

发明人： Jin Young Yoon ,  Young Chul Kim

IPC分类号： H01L21/768 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/108 ,  H01L21/4763

CPC分类号： H01L21/76807 ,  H01L23/5226 ,  H01L2924/0002

摘要： A fabricating method of a multi-level wiring structure for a semiconductor device that improves the resolution of photoresist film pattern by reducing a photoresist film and is capable of fabricating a semiconductor device of a high reliability by using an improved via hole mask includes the steps of sequentially forming a first insulating film, a first etching stop film, a second insulating film and a second etching stop film on a lower conductive layer pattern, forming a trench by etching the second etching stop film, the second insulating film and the first etching stop film which corresponds to an upper conductive layer pattern, forming a photoresist film on an entire upper surface of the resultant semiconductor substrate so that a thin photoresist film at about 1000-3000 .ANG. is formed on the second etching stop film, forming an opening on a predetermined portion of the trench by performing a photolithography, forming a via hole by etching the first insulating film through the opening, and filling a conductive material in the via hole and the trench.

摘要翻译： 一种用于半导体器件的多级布线结构的制造方法，其通过减少光致抗蚀剂膜来提高光致抗蚀剂膜图案的分辨率，并且能够通过使用改进的通孔掩模制造具有高可靠性的半导体器件的步骤包括以下步骤： 在下导电层图案上依次形成第一绝缘膜，第一蚀刻停止膜，第二绝缘膜和第二蚀刻停止膜，通过蚀刻第二蚀刻停止膜，第二绝缘膜和第一蚀刻停止层形成沟槽 膜，其对应于上导电层图案，在所得半导体衬底的整个上表面上形成光致抗蚀剂膜，使得在第二蚀刻停止膜上形成约1000-3000安培的薄的光致抗蚀剂膜，从而在 通过进行光刻来形成沟槽的预定部分，通过蚀刻第一绝缘膜形成通孔 打开并在通孔和沟槽中填充导电材料。

公开(公告)号：US07384730B2

公开(公告)日：2008-06-10

申请号：US11281775

申请日：2005-11-17

申请人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Sang-Gyun Woo ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Jung-Hwan Hah

发明人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Sang-Gyun Woo ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Jung-Hwan Hah

IPC分类号： G03F7/38 ,  H01L21/027 ,  G03F7/11

CPC分类号： G03F7/11 ,  C08F220/06 ,  C08F220/18 ,  G03F7/2041 ,  Y10S430/146 ,  Y10S430/162

摘要： Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03≦m/(m+n+q)≦0.97, 0.03≦n/(m+n+q)≦0.97, 0≦q/(m+n+q)≦0.5; and wherein the solvent includes deionized water.

摘要翻译： 提供能够用于浸没式光刻的顶涂层组合物，以及使用其形成光刻胶图案的方法。 顶部涂料组合物包括：聚合物，碱; 和溶剂，其中所述聚合物可以由式I表示：其中R 1和R 2独立地选自氢，氟，甲基和三氟甲基 ; X是羧酸基或磺酸基; Y是羧酸基或磺酸基，其中羧酸基或磺酸基被保护; Z是选自乙烯基单体，亚烷基二醇，马来酸酐，乙烯亚胺，含恶唑啉的单体，丙烯腈，烯丙基酰胺，3,4-二氢吡喃，2,3-二氢呋喃，四氟乙烯 ，或其组合; 并且m，n和q是整数，其中<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.03 <= m /（m + n + q）<= 0.97， in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.03 <= n /（m + n + q）<= 0.97，<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead” α> 0 <= q /（m + n + q）<= 0.5; <？in-line-formula description =“In-line Formulas”end =“tail”？>，其中溶剂包括去离子水。

公开(公告)号：US20060275697A1

公开(公告)日：2006-12-07

申请号：US11364707

申请日：2006-02-27

申请人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Hyun-Woo Kim ,  Sang-Gyun Woo ,  Jin-Young Yoon ,  Jung-Hwan Hah

发明人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Hyun-Woo Kim ,  Sang-Gyun Woo ,  Jin-Young Yoon ,  Jung-Hwan Hah

IPC分类号： G03C1/00

CPC分类号： G03F7/11 ,  G03F7/2041

摘要： Provided are a top coating composition for a photoresist which can be used in immersion lithography, and a method of forming a photoresist pattern using the same. The top coating composition includes: a polymer including at least three different structural repeating units including a first repeating unit comprising a carboxy group substituted by an alkyl protecting group or an acid-labile group, a second repeating unit comprising an acid group, and a third repeating unit comprising a polar group, and an organic solvent comprising an alcohol.

摘要翻译： 提供了可用于浸没式光刻的光致抗蚀剂的顶涂层组合物，以及使用其形成光致抗蚀剂图案的方法。 顶部涂料组合物包括：包含至少三种不同结构重复单元的聚合物，其包括第一重复单元，其包含被烷基保护基团或酸不稳定基团取代的羧基，第二重复单元包含酸基，和第三重复单元 包含极性基团的重复单元和包含醇的有机溶剂。

公开(公告)号：US20060111550A1

公开(公告)日：2006-05-25

申请号：US11281775

申请日：2005-11-17

申请人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Sang-Gyun Woo ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Jung-Hwan Hah

发明人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Sang-Gyun Woo ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Jung-Hwan Hah

IPC分类号： C08F6/00

CPC分类号： G03F7/11 ,  C08F220/06 ,  C08F220/18 ,  G03F7/2041 ,  Y10S430/146 ,  Y10S430/162

摘要： Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03≦m/(m+n+q)≦0.97, 0.03≦n/(m+n+q)≦0.97, 0≦q/(m+n+q)≦0.5; and wherein the solvent includes deionized water.

摘要翻译： 提供能够用于浸没式光刻的顶涂层组合物，以及使用其形成光刻胶图案的方法。 顶部涂料组合物包括：聚合物，碱; 和溶剂，其中所述聚合物可以由式I表示：其中R 1和R 2独立地选自氢，氟，甲基和三氟甲基 ; X是羧酸基或磺酸基; Y是羧酸基或磺酸基，其中羧酸基或磺酸基被保护; Z是选自乙烯基单体，亚烷基二醇，马来酸酐，乙烯亚胺，含恶唑啉的单体，丙烯腈，烯丙基酰胺，3,4-二氢吡喃，2,3-二氢呋喃，四氟乙烯 ，或其组合; 并且m，n和q是其中0.03 <= m /（m + n + q）<=0.97,0.03≤n/（m + n + q）<= 0.97,0 <= q /（m + n + q）<= 0.5; 并且其中所述溶剂包括去离子水。

公开(公告)号：US08302715B2

公开(公告)日：2012-11-06

申请号：US12767628

申请日：2010-04-26

申请人： Seung Hyeob Lee ,  Jun Ho Cha ,  Jin Young Yoon ,  Jeong Gil Park ,  Hun Soo Kim ,  Yun Seok Kim ,  Yong Suk Shin ,  Bo Hwan Cha

发明人： Seung Hyeob Lee ,  Jun Ho Cha ,  Jin Young Yoon ,  Jeong Gil Park ,  Hun Soo Kim ,  Yun Seok Kim ,  Yong Suk Shin ,  Bo Hwan Cha

IPC分类号： B60K11/08

CPC分类号： B60K11/085 ,  F01P7/12 ,  Y02T10/88

摘要： Disclosed herein is an apparatus for opening and closing an air flap for a vehicle. The apparatus for opening and closing an air flap may include a coolant temperature sensor provided at an engine to measure a coolant temperature of the engine, a control unit comparing a measurement value input from the coolant temperature sensor with a reference value stored therein, thus outputting a control signal, an actuator rotating in response to the control signal of the control unit, a power transmission unit connected to the actuator to transmit rotating force of the actuator, and a flap unit installed in an opening of a front end module carrier, and being selectively movable in a vertical direction in the opening by power transmitted from the power transmission unit to the flap unit to open or close the opening, thus permitting or preventing an inflow of air into the cooling module.

摘要翻译： 本文公开了一种用于打开和关闭用于车辆的空气挡板的装置。 用于打开和关闭空气挡板的装置可以包括设置在发动机处以测量发动机的冷却剂温度的冷却剂温度传感器，控制单元将从冷却剂温度传感器输入的测量值与存储在其中的参考值进行比较，从而输出 控制信号，响应于控制单元的控制信号旋转的致动器;连接到致动器以传递致动器的旋转力的动力传递单元，以及安装在前端模块托架的开口中的挡板单元，以及 通过从动力传递单元传递到翼片单元的动力在开口中沿垂直方向选择性地移动以打开或关闭开口，从而允许或防止空气流入冷却模块。

公开(公告)号：US08173358B2

公开(公告)日：2012-05-08

申请号：US12432357

申请日：2009-04-29

申请人： Hyoung-hee Kim ,  Yool Kang ,  Seong-woon Choi ,  Jin-young Yoon

发明人： Hyoung-hee Kim ,  Yool Kang ,  Seong-woon Choi ,  Jin-young Yoon

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40

CPC分类号： H01L21/0273 ,  Y10S430/106 ,  Y10S430/114

摘要： A method of forming fine patterns of a semiconductor device includes forming a plurality of first mask patterns on a substrate such that the plurality of first mask patterns are separated from one another by a space located therebetween, in a direction parallel to a main surface of the substrate, forming a plurality of capping films formed of a first material having a first solubility in a solvent on sidewalls and a top surface of the plurality of first mask patterns. The method further includes forming a second mask layer formed of a second material having a second solubility in the solvent, which is less than the first solubility, so as to fill the space located between the plurality of first mask patterns, and forming a plurality of second mask patterns corresponding to residual portions of the second mask layer which remain in the space located between the plurality of first mask patterns, after removing the plurality of capping films and a portion of the second mask layer using the solvent.

摘要翻译： 一种形成半导体器件的精细图案的方法包括在衬底上形成多个第一掩模图案，使得多个第一掩模图案在平行于所述第一掩模图案的主表面的方向上彼此分开位于其间的空间 形成多个由第一材料形成的封盖膜，该第一材料在溶剂中具有第一溶解性，并且在多个第一掩模图案的侧壁和顶表面上形成。 该方法还包括形成由溶剂中第二溶解度小于第一溶解度的第二材料形成的第二掩模层，以填充位于多个第一掩模图案之间的空间，并形成多个 第二掩模图案对应于残留在位于多个第一掩模图案之间的空间中的第二掩模层的残留部分，在使用溶剂除去多个封盖膜和第二掩模层的一部分之后。