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31 条记录 (耗时 0.025 秒)

    Method of fabricating SiGe Bi-CMOS device
    1.
    发明申请
    Method of fabricating SiGe Bi-CMOS device 失效
    制造SiGe Bi-CMOS器件的方法

    公开(公告)号：US20060121667A1

    公开(公告)日：2006-06-08

    申请号：US11283012

    申请日：2005-11-18

    申请人： Hyun Bae ,  Seung Lee ,  Sang Kim ,  Jin Kang

    发明人： Hyun Bae ,  Seung Lee ,  Sang Kim ,  Jin Kang

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/8249

    摘要： Provided is a method of fabricating a silicon germanium (SiGe) Bi-CMOS device. In the fabrication method, the source and drain of the CMOS device is formed using a silicon germanium (SiGe) heterojunction, instead of silicon, thereby preventing a leakage current resulting from a parasitic bipolar operation. Further, since the source and drain is connected with an external interconnection through the nickel (Ni) silicide layer, the contact resistance is reduced, thereby preventing loss of a necessary voltage for a device operation and accordingly, making it possible to enable a low voltage and low power operation and securing a broad operation region even in a low voltage operation of an analogue circuit.

    摘要翻译： 提供一种制造硅锗（SiGe）Bi-CMOS器件的方法。 在制造方法中，使用硅锗（SiGe）异质结代替硅形成CMOS器件的源极和漏极，从而防止由寄生双极性操作引起的漏电流。 此外，由于源极和漏极通过镍（Ni）硅化物层与外部互连件连接，所以接触电阻降低，从而防止器件操作所需的电压的损失，并因此使得能够实现低电压 并且即使在模拟电路的低电压操作下也能实现低功率操作并确保宽的操作区域。

    Semiconductor device and method of manufacturing the same
    2.
    发明申请
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US20070134879A1

    公开(公告)日：2007-06-14

    申请号：US11485895

    申请日：2006-07-13

    申请人： Sang Kim ,  Hyun Bae ,  Sang Lee

    发明人： Sang Kim ,  Hyun Bae ,  Sang Lee

    IPC分类号： H01L21/336 ,  H01L29/76

    CPC分类号： H01L29/165 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/78 ,  H01L29/7848

    摘要： Provided are a semiconductor device and a method of manufacturing the same. The method includes the steps of: forming a first silicon layer on a semiconductor substrate; patterning the first silicon layer formed on the semiconductor substrate, and exposing a channel region; forming a second silicon layer on the semiconductor substrate in which the channel region is exposed; removing the first silicon layer, and forming source and drain regions; and forming a third silicon layer in the source and drain regions. According to the manufacturing method, it is possible to minimize defects in a silicon interface by forming the source and drain using only a selective epitaxial growth method without a dry-etching process. Also, since stress is concentrated to a silicon channel region, hole mobility and driving current characteristics are considerably improved.

    摘要翻译： 提供半导体器件及其制造方法。 该方法包括以下步骤：在半导体衬底上形成第一硅层; 图案化形成在半导体衬底上的第一硅层，并暴露沟道区; 在所述半导体衬底上形成所述沟道区域露出的第二硅层; 去除第一硅层，形成源区和漏区; 以及在源区和漏区中形成第三硅层。 根据制造方法，可以通过仅使用选择性外延生长法而不进行干蚀刻工艺来形成源极和漏极来最小化硅界面中的缺陷。 此外，由于应力集中在硅沟道区域，空穴迁移率和驱动电流特性显着提高。

    Dynamic Stabilization Devices and Methods
    5.
    发明申请
    Dynamic Stabilization Devices and Methods 有权
    动态稳定装置和方法

    公开(公告)号：US20080161854A1

    公开(公告)日：2008-07-03

    申请号：US11950754

    申请日：2007-12-05

    申请人： Hyun Bae ,  John Pafford

    发明人： Hyun Bae ,  John Pafford

    IPC分类号： A61B17/58 ,  A61B17/56

    CPC分类号： A61B17/7007 ,  A61B17/701 ,  A61B17/7031 ,  A61B17/8014

    摘要： A dynamic stabilization device includes end caps that define a bore for receiving a corresponding bone screw therethrough. A spacer is engaged between each end cap and a cable passes through each of the components and is placed in tension to couple the spacer between the two end caps. The spacer is formed of a material that allows some flexible movement after implantation. An alternative stabilization device includes a spacer over-molded about two bushings defining the bores. According to a method of use, a stabilization device is passed along guide wires through a small incision. Once the device is in contact with the vertebrae, the bone screws are advanced along the guide wires and driven into the bone. One fastener bore may include a camming surface that causes distraction of the vertebrae as the bone screw is threaded into the vertebral bone.

    摘要翻译： 动态稳定装置包括端盖，其限定用于接收通过其中的相应骨螺钉的孔。 间隔件接合在每个端盖之间，并且电缆穿过每个部件并且被放置成张紧以将间隔件连接在两个端盖之间。 间隔物由植入后允许一些柔性移动的材料形成。 一种替代的稳定装置包括围绕限定孔的两个衬套的超模压件。 根据使用的方法，稳定装置沿着导丝穿过小切口。 一旦装置与椎骨接触，骨螺钉沿着导丝进入并被驱动进入骨骼。 一个紧固件孔可以包括凸轮表面，当骨螺钉拧入椎骨时，凸轮表面引起椎骨牵引。

    Media gateway and method of managing local channel thereof
    7.
    发明申请
    Media gateway and method of managing local channel thereof 审中-公开
    媒体网关及其管理本地信道的方法

    公开(公告)号：US20050135376A1

    公开(公告)日：2005-06-23

    申请号：US10910500

    申请日：2004-08-02

    申请人： Hyun Bae ,  Seung Choi ,  Tae Kang ,  Do Kim

    发明人： Hyun Bae ,  Seung Choi ,  Tae Kang ,  Do Kim

    IPC分类号： H04L12/66 ,  H04M7/00 ,  H04L12/56

    CPC分类号： H04M7/1255 ,  H04L12/66

    摘要： A media gateway and a method of managing a local channel thereof are provided. A main control processor selects one of at least one DSP in response to a call setup request and selects a TDM channel of the selected DSP. Then, the main control processor assigns a session number to the selected DSP in order to distinguish the call inside the selected DSP, and assigns a channel that is in an idle status among predetermined RTP available channels as an RTP channel for the call. The session number with respect to the TDM channel is assigned by the main control processor to the DSP if the main control processor selects the TDM channel of the DSP among a plurality of DSPs, each of which includes a plurality of TDM channels. The DSP stores the session number. A T-switch dynamically connects the plurality of TDM channels with a plurality of E1 links. The local DSPs of the media gateway can operate with only channel information necessary for the DSPs themselves without storing system-level channel information.

    摘要翻译： 提供了媒体网关和管理其本地信道的方法。 主控制处理器响应于呼叫建立请求选择至少一个DSP中的一个，并选择所选DSP的TDM信道。 然后，主控制处理器向所选择的DSP分配会话号码，以区分所选择的DSP内的呼叫，并且将预定的RTP可用信道中处于空闲状态的信道分配为该呼叫的RTP信道。 如果主控制处理器在多个DSP中选择DSP的TDM信道，每个DSP包括多个TDM信道，则主控处理器将相对于TDM信道的会话号码分配给DSP。 DSP存储会话编号。 T交换机将多个TDM信道与多个E1链路动态连接。 媒体网关的本地DSP可以仅操作DSP本身所需的信道信息，而不存储系统级信道信息。

    Blade fixation for ankle fusion and arthroplasty
    8.
    发明授权
    Blade fixation for ankle fusion and arthroplasty 有权
    刀片固定用于踝关节融合和关节成形术

    公开(公告)号：US09480511B2

    公开(公告)日：2016-11-01

    申请号：US13747791

    申请日：2013-01-23

    申请人： Hyun Bae

    发明人： Joshua A. Butters ,  Jeffery D. Arnett ,  Hyun Bae

    IPC分类号： A61B17/70 ,  A61B17/80

    CPC分类号： A61B17/562 ,  A61B17/8061 ,  A61F2/4202

    摘要： Systems for lower extremity fusion and arthroplasty include fusion spacers, bone plates, and articular prostheses fixed to bone by blade anchors. Examples are shown for anterior, lateral, and medial approaches.

    摘要翻译： 用于下肢融合和关节成形术的系统包括通过刀片锚固件固定到骨头的融合间隔物，骨板和关节假体。 显示了前，外侧和内侧方法的实例。