公开(公告)号：US20060121667A1

公开(公告)日：2006-06-08

申请号：US11283012

申请日：2005-11-18

申请人： Hyun Bae ,  Seung Lee ,  Sang Kim ,  Jin Kang

发明人： Hyun Bae ,  Seung Lee ,  Sang Kim ,  Jin Kang

IPC分类号： H01L21/8238

CPC分类号： H01L21/8249

摘要： Provided is a method of fabricating a silicon germanium (SiGe) Bi-CMOS device. In the fabrication method, the source and drain of the CMOS device is formed using a silicon germanium (SiGe) heterojunction, instead of silicon, thereby preventing a leakage current resulting from a parasitic bipolar operation. Further, since the source and drain is connected with an external interconnection through the nickel (Ni) silicide layer, the contact resistance is reduced, thereby preventing loss of a necessary voltage for a device operation and accordingly, making it possible to enable a low voltage and low power operation and securing a broad operation region even in a low voltage operation of an analogue circuit.

摘要翻译： 提供一种制造硅锗（SiGe）Bi-CMOS器件的方法。 在制造方法中，使用硅锗（SiGe）异质结代替硅形成CMOS器件的源极和漏极，从而防止由寄生双极性操作引起的漏电流。 此外，由于源极和漏极通过镍（Ni）硅化物层与外部互连件连接，所以接触电阻降低，从而防止器件操作所需的电压的损失，并因此使得能够实现低电压 并且即使在模拟电路的低电压操作下也能实现低功率操作并确保宽的操作区域。

公开(公告)号：US20070287234A1

公开(公告)日：2007-12-13

申请号：US11797071

申请日：2007-04-30

申请人： Jin Kang ,  Seung Lee ,  Kyoung Cho

发明人： Jin Kang ,  Seung Lee ,  Kyoung Cho

IPC分类号： H01L21/8249

CPC分类号： H01L21/84 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/1203 ,  H01L29/7371 ,  H01L29/78

摘要： Provided are bipolar transistor, BiCMOS device and method of fabricating thereof, in which an existing sub-collector disposed beneath a collector of a SiGe HBT is removed and a collector plug disposed at a lateral side of the collector is approached to a base when fabricating a Si-based very high-speed device, whereby it is possible to fabricate the SiGe HBT and an SOI CMOS on a single substrate, reduce the size of the device and the number of masks to be used, and implement the device of high density, low power consumption, and wideband performance.

摘要翻译： 提供了双极晶体管，BiCMOS器件及其制造方法，其中去除了设置在SiGe HBT的集电极下方的现有子集电极，并且设置在集电极的横向侧的集电极端子在制造时 基于Si的非常高速的器件，由此可以在单个衬底上制造SiGe HBT和SOI CMOS，减少器件的尺寸和使用的掩模的数量，并实现高密度的器件， 低功耗，宽带性能。

公开(公告)号：US20050104127A1

公开(公告)日：2005-05-19

申请号：US10872593

申请日：2004-06-22

申请人： Jin Kang ,  Seung Lee ,  Kyoung Cho

发明人： Jin Kang ,  Seung Lee ,  Kyoung Cho

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L29/737 ,  H01L29/76

CPC分类号： H01L29/7378 ,  H01L21/84

摘要： Provided are bipolar transistor, BiCMOS device and method of fabricating thereof, in which an existing sub-collector disposed beneath a collector of a SiGe HBT is removed and a collector plug disposed at a lateral side of the collector is approached to a base when fabricating a Si-based very high-speed device, whereby it is possible to fabricate the SiGe HBT and an SOI CMOS on a single substrate, reduce the size of the device and the number of masks to be used, and implement the device of high density, low power consumption, and wideband performance.

摘要翻译： 提供了双极晶体管，BiCMOS器件及其制造方法，其中去除了设置在SiGe HBT的集电极下方的现有子集电极，并且设置在集电极的横向侧的集电极端子在制造时 基于Si的非常高速的器件，由此可以在单个衬底上制造SiGe HBT和SOI CMOS，减少器件的尺寸和使用的掩模的数量，并实现高密度的器件， 低功耗，宽带性能。

公开(公告)号：US20050139921A1

公开(公告)日：2005-06-30

申请号：US11019179

申请日：2004-12-23

申请人： Jin Kang ,  Seung Lee ,  Kyoung Cho

发明人： Jin Kang ,  Seung Lee ,  Kyoung Cho

IPC分类号： H01L27/092 ,  H01L21/331 ,  H01L21/8228 ,  H01L21/84 ,  H01L27/12 ,  H01L27/01

CPC分类号： H01L29/66242 ,  H01L21/84 ,  H01L27/1203

摘要： Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.

摘要翻译： 提供了在SOI衬底上实现的NMOS器件，PMOS器件和SiGe HBT器件及其制造方法。 在制造Si基高速器件时，SiGe HBT和CMOS安装在单个SOI衬底上。 特别地，CMOS的源极和漏极由SiGe和金属形成，因此防止漏电流并实现低功耗。 此外，芯片中的发热被抑制，即使在低电压下也可以获得宽的工作范围。

公开(公告)号：US20050006636A1

公开(公告)日：2005-01-13

申请号：US10912614

申请日：2004-08-04

申请人： Kyu Shim ,  Young Song ,  Sang Kim ,  Jin Kang

发明人： Kyu Shim ,  Young Song ,  Sang Kim ,  Jin Kang

IPC分类号： H01L29/12 ,  H01L31/102 ,  H01L33/08 ,  H01L33/18 ,  H01L21/00 ,  H01L33/00

CPC分类号： H01L29/127 ,  B82Y10/00 ,  B82Y20/00 ,  H01L31/102 ,  H01L33/08 ,  H01L33/18

摘要： An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.

摘要翻译： 提供了通过形成双结构纳米点以增强电子和空穴的限制密度来提高光发射或光接收等光电效应的光电子器件及其制造方法。 光电子器件包括电子注入层，纳米点和空穴注入层。 纳米点具有由外部纳米点和内部点组成的双重结构。 制造光电器件的方法包括以下步骤：在半导体衬底上形成电子注入层; 通过外延生长法在电子注入层上生长纳米点层; 加热纳米点层，使得纳米点具有由外部纳米点和内部纳米点组成的双重结构; 并在整个结构上形成空穴注入层。

公开(公告)号：US20050196925A1

公开(公告)日：2005-09-08

申请号：US11018647

申请日：2004-12-22

申请人： Sang Kim ,  Kyu Shim ,  Jin Kang

发明人： Sang Kim ,  Kyu Shim ,  Jin Kang

IPC分类号： H01L29/739

CPC分类号： H01L29/7782 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/78

摘要： Provided is a method of forming a stress-relaxed SiGe buffer layer on a silicon substrate using a reduced pressure chemical vapor deposition (RPCVD) technique. The method includes: forming a graded composition layer having a predetermined germanium composition gradient on a silicon substrate; forming and thermally annealing a first constant composition layer having a predetermined germanium composition on the graded composition layer; removing the first constant composition layer by a predetermined thickness to planarize a surface; and forming a second constant composition layer on the first constant composition layer to form a SiGe buffer layer having the graded composition layer and the constant composition layer. A strained silicon or SiGe channel can be formed in a silicon-based MOSFET device or a MODFET device by forming the stress-relaxed SiGe buffer layer that has a relatively thin thickness, a low surface dislocation density, and a surface roughness similar to bulk silicon, and thus a device having excellent channel conductivity and high frequency characteristics can be manufactured.

摘要翻译： 提供了使用减压化学气相沉积（RPCVD）技术在硅衬底上形成应力松弛SiGe缓冲层的方法。 该方法包括：在硅衬底上形成具有预定锗组分梯度的梯度组合物层; 在梯度组合物层上形成并热退火具有预定锗组合物的第一恒定组成层; 将第一恒定组成层除去预定厚度以使表面平坦化; 以及在第一恒定组成层上形成第二恒定组成层以形成具有渐变组成层和恒定组成层的SiGe缓冲层。 可以通过形成具有较薄厚度，低表面位错密度和与体硅相似的表面粗糙度的应力松弛SiGe缓冲层，在硅基MOSFET器件或MODFET器件中形成应变硅或SiGe沟道 ，因此可以制造具有优异的沟道导电性和高频特性的器件。

公开(公告)号：US20050115946A1

公开(公告)日：2005-06-02

申请号：US10817851

申请日：2004-04-06

申请人： Kyu Shim ,  Young Song ,  Sang Kim ,  Nae Lee ,  Jin Kang

发明人： Kyu Shim ,  Young Song ,  Sang Kim ,  Nae Lee ,  Jin Kang

IPC分类号： H01L21/205 ,  F27B5/14 ,  F27B17/00 ,  H01L21/00 ,  H01L21/316 ,  H01L21/44

CPC分类号： H01L21/67115 ,  F27B17/0025 ,  H01L21/02126 ,  H01L21/02178 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/31662

摘要： Provided is a radical assisted oxidation apparatus comprising a gas supply system, a radical source, a growth chamber, a load lock chamber, and a vacuum system, whereby it is possible to manufacture a high quality oxide film at a low temperature and improve a low frequency noise (1/f).

摘要翻译： 提供了一种自由基辅助氧化装置，其包括气体供给系统，自由基源，生长室，负载锁定室和真空系统，由此可以在低温下制造高质量的氧化物膜并且提高低 频率噪声（1 / f）。

公开(公告)号：US20150150464A1

公开(公告)日：2015-06-04

申请号：US14561087

申请日：2014-12-04

申请人： Emad Boctor ,  Behnoosh Tavakoli ,  Hyun-Jae Kang ,  Xiaoyu Guo ,  Jin Kang

发明人： Emad Boctor ,  Behnoosh Tavakoli ,  Hyun-Jae Kang ,  Xiaoyu Guo ,  Jin Kang

IPC分类号： A61B5/00 ,  A61B8/08 ,  A61B19/00 ,  A61B5/01

CPC分类号： A61B5/0095 ,  A61B5/0084 ,  A61B5/015 ,  A61B5/4509 ,  A61B5/7246 ,  A61B5/7275 ,  A61B5/7282 ,  A61B8/12 ,  A61B8/485 ,  A61B8/5253 ,  A61B34/20 ,  A61B2034/2051 ,  A61B2034/2055 ,  A61B2576/02

摘要： Systems and methods for real-time tracking of photoacoustic sensing are provided. In one aspect, a method for performing in vivo analysis of a subject is provided. The method includes directing an electromagnetic excitation toward a subject to be analyzed, and acquiring, with an ultrasound probe, data about resultant waves caused by the electromagnetic excitation. The method also includes processing the acquired data to extract information related to properties of tissues in the subject, and comparing the information related to the properties of tissues in the subject using a set of criteria. The method also includes generating a report about a condition of the subject based on the comparison of the information related to properties of the tissues in the subject.

摘要翻译： 提供了用于光声感测的实时跟踪的系统和方法。 一方面，提供了一种用于进行受试者体内分析的方法。 该方法包括向被分析对象引导电磁激励，并用超声波探头获取由电磁激励引起的合成波的数据。 该方法还包括处理所获取的数据以提取与受试者中组织的属性相关的信息，并且使用一组标准来比较与对象中的组织的属性相关的信息。 该方法还包括基于与对象中的组织的属性相关的信息的比较来生成关于对象的状况的报告。

公开(公告)号：US20130253313A1

公开(公告)日：2013-09-26

申请号：US13813896

申请日：2011-08-02

申请人： Jin Kang ,  Marcin Arkadiusz Balicki ,  Rajesh Kumar ,  Russell H. Taylor

发明人： Jin Kang ,  Marcin Arkadiusz Balicki ,  Rajesh Kumar ,  Russell H. Taylor

IPC分类号： A61B1/00 ,  A61B3/10 ,  A61B1/07

CPC分类号： A61B1/00188 ,  A61B1/00004 ,  A61B1/00165 ,  A61B1/00172 ,  A61B1/0669 ,  A61B1/07 ,  A61B1/313 ,  A61B3/102 ,  A61B3/1225 ,  A61F9/007

摘要： An autofocusing endoscope includes an objective lens, a relay optical system arranged to relay an image between the objective lens and a proximal end of the autofocusing endoscope, an optical fiber arranged with a distal end proximate the objective lens, a light source arranged to couple light into the optical fiber, an optical detection system arranged to receive and detect light from the optical fiber, and a data processor constructed to communicate with the optical detection system while in operation. The data processor is configured to determine a distance of a surface to be imaged through the objective lens and provide instructions for adjusting a focus of the autofocusing endoscope of the surface.

摘要翻译： 一种自动对焦内窥镜，包括：物镜;中继光学系统，被配置为中继所述物镜与所述自聚焦内窥镜的近端之间的图像，配置有靠近所述物镜的远端的光纤;光源， 光纤检测系统被布置成接收和检测来自光纤的光;以及数据处理器，被构造成在操作中与光学检测系统进行通信。 数据处理器被配置为确定要通过物镜成像的表面的距离，并提供用于调整表面的自动聚焦内窥镜的焦点的指令。

公开(公告)号：US20050017498A1

公开(公告)日：2005-01-27

申请号：US10897259

申请日：2004-07-22

申请人： Jin Kang

发明人： Jin Kang

IPC分类号： B60R22/24 ,  B60R22/00

CPC分类号： B21D53/88 ,  B21D35/00 ,  B60R22/24

摘要： The present invention relates to an improved pillar anchor and a method for manufacturing the same. According to the pillar anchor of the present invention described as above and the method for manufacturing the same, the rims of the pair of separated base plates abut each other, so that the surface in contact with the belt is formed in a “C”-shape. Thus, it is simple to manufacture the pillar anchor of the present invention, and moreover, the number of processes needed for manufacture is reduced. In addition, since the inner peripheral surfaces of the belt insertion holes around which the belt is wound are generally formed of only a steel plate, the friction coefficient between the belt and the inner peripheral surfaces of the belt insertion holes is reduced. Accordingly, when the belt is subjected to tension, damage caused from wear and tear of the belt due to the friction between the belt and the inner peripheral surfaces of the belt insertion holes is effectively reduced. Moreover, the belt can smoothly moves on the inner peripheral surfaces of the belt insertion holes.

摘要翻译： 本发明涉及一种改进的支柱锚及其制造方法。 根据如上所述的本发明的支柱锚及其制造方法，一对分离的基板的边缘彼此邻接，使得与带接触的表面形成为“C”形， 形状。 因此，制造本发明的支柱锚固件变得简单，此外，减少制造所需的工序数量。 此外，由于带卷绕的带插入孔的内周面通常仅由钢板形成，所以带与带插入孔的内周面之间的摩擦系数降低。 因此，当带受到张力时，由于带与带插入孔的内周面之间的摩擦而导致的带的磨损造成的损伤被有效地减少。 此外，带可以在带插入孔的内周面上平滑地移动。