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    Silicon wafer with controlled distribution of embryos that become oxygen precipitates by succeeding annealing and its manufacturing method
    1.
    发明授权
    Silicon wafer with controlled distribution of embryos that become oxygen precipitates by succeeding annealing and its manufacturing method 有权
    通过后续退火而成为氧沉淀的胚胎受控分布的硅晶片及其制造方法

    公开(公告)号：US08298926B2

    公开(公告)日：2012-10-30

    申请号：US12521268

    申请日：2007-12-27

    申请人： Hyung-Kook Park ,  Jin-Kyun Hong ,  Kun Kim ,  Chung-Geun Koh

    发明人： Hyung-Kook Park ,  Jin-Kyun Hong ,  Kun Kim ,  Chung-Geun Koh

    IPC分类号： H01L21/324 ,  C03B25/00

    CPC分类号： H01L21/3225

    摘要： A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device manufacturing process. In the silicon wafer, embryos are substantially removed in a denuded zone, and embryos are distributed at a relatively higher concentration in a bulk region. Also, by controlling behaviors of embryos, a silicon wafer having a desired concentration profile of oxygen precipitates by succeeding thermal annealing is manufactured with high reliability and reproducibility.

    摘要翻译： 制造硅晶片的方法包括以下步骤：通过在半导体器件制造过程中施加的热退火，产生并稳定成为氧沉淀物的胚胎。 在硅晶片中，在裸露区域中基本上除去胚胎，并且在体积区域以相对较高的浓度分布胚胎。 此外，通过控制胚胎的行为，以高可靠性和再现性制造具有期望的热退火的氧析出物浓度分布的硅晶片。

    SILICON WAFER WITH CONTROLLED DISTRIBUTION OF EMBRYOS THAT BECOME OXYGEN PRECIPITATES BY SUCCEEDING ANNEALING AND ITS MANUFACTURING METHOD
    2.
    发明申请
    SILICON WAFER WITH CONTROLLED DISTRIBUTION OF EMBRYOS THAT BECOME OXYGEN PRECIPITATES BY SUCCEEDING ANNEALING AND ITS MANUFACTURING METHOD 有权
    通过控制分解通过回收退火而产生氧化沉淀的胚胎的硅砂及其制造方法

    公开(公告)号：US20100038755A1

    公开(公告)日：2010-02-18

    申请号：US12521268

    申请日：2007-12-27

    申请人： Hyung Kook Park ,  Jin-Kyun Hong ,  Kun Kim ,  Chung-Geun Koh

    发明人： Hyung Kook Park ,  Jin-Kyun Hong ,  Kun Kim ,  Chung-Geun Koh

    IPC分类号： H01L29/36 ,  H01L21/322

    CPC分类号： H01L21/3225

    摘要： A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device manufacturing process. In the silicon wafer, embryos are substantially removed in a denuded zone, and embryos are distributed at a relatively higher concentration in a bulk region. Also, by controlling behaviors of embryos, a silicon wafer having a desired concentration profile of oxygen precipitates by succeeding thermal annealing is manufactured with high reliability and reproducibility.

    摘要翻译： 制造硅晶片的方法包括以下步骤：通过在半导体器件制造过程中施加的热退火，产生并稳定成为氧沉淀物的胚胎。 在硅晶片中，在裸露区域中基本上除去胚胎，并且在体积区域以相对较高的浓度分布胚胎。 此外，通过控制胚胎的行为，以高可靠性和再现性制造具有期望的热退火的氧析出物浓度分布的硅晶片。

    Method of manufacturing semiconductor device using stress memorization technique
    3.
    发明授权
    Method of manufacturing semiconductor device using stress memorization technique 有权
    使用应力记忆技术制造半导体器件的方法

    公开(公告)号：US08772095B2

    公开(公告)日：2014-07-08

    申请号：US13495062

    申请日：2012-06-13

    申请人： Seok-Hoon Kim ,  Sang-Su Kim ,  Chung-Geun Koh ,  Sun-Ghil Lee ,  Jin-Yeong Joe

    发明人： Seok-Hoon Kim ,  Sang-Su Kim ,  Chung-Geun Koh ,  Sun-Ghil Lee ,  Jin-Yeong Joe

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7847 ,  H01L21/26506 ,  H01L21/26593 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/7843

    摘要： The manufacturing a semiconductor device includes providing a substrate supporting a gate electrode, amorphizing and doping the source/drain regions located on both sides of the gate electrode by performing a pre-amorphization implant (PAI) process and implanting C or N into the source/drain regions in or separately from the PAI process, forming a stress inducing layer on the substrate to cover the amorphized source/drain regions, and subsequently recrystallizing the source/drain regions by annealing the substrate. The stress inducing layer may then be removed. Also, the C or N may be implanted into the entirety of the source/drain regions after the regions have been amorphized, or only into upper portions of the amorphized source/drain regions.

    摘要翻译： 制造半导体器件包括提供支撑栅电极的衬底，通过执行预非晶化注入（PAI）工艺并且将C或N注入到源/漏区中来对位于栅电极的两侧的源/漏区进行非晶化和掺杂， 漏极区域或与PAI工艺分离，在衬底上形成应力诱导层以覆盖非晶化源极/漏极区域，并且随后通过对衬底退火来使源极/漏极区域再结晶。 然后可以去除应力诱导层。 此外，在区域已经非晶化之后，或仅仅在非晶化源极/漏极区域的上部，C或N可以被注入到整个源极/漏极区域中。

    METHOD FOR MANUFACTURING A STRAINED SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD FOR MANUFACTURING A STRAINED SEMICONDUCTOR DEVICE 审中-公开
    制造应变半导体器件的方法

    公开(公告)号：US20120034749A1

    公开(公告)日：2012-02-09

    申请号：US13197658

    申请日：2011-08-03

    申请人： Kwan-Yong LIM ,  Chung-Geun Koh ,  Hyun-Jung Lee ,  Tae-Ouk Kwon ,  Seok-Hoon Kim ,  Tae-Ho Cha

    发明人： Kwan-Yong LIM ,  Chung-Geun Koh ,  Hyun-Jung Lee ,  Tae-Ouk Kwon ,  Seok-Hoon Kim ,  Tae-Ho Cha

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823412 ,  H01L21/823807 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7847

    摘要： A method of manufacturing a semiconductor device can be provided by forming a gate structure on a substrate and forming a diffusion barrier layer on the gate structure and the substrate, A stress layer can be formed on the diffusion barrier layer comprising a metal nitride or a metal oxide having a concentration of nitrogen or oxygen associated therewith. The stress layer can be heated to transform the stress layer into a tensile stress layer to reduce the concentration of the nitrogen or the oxygen in the stress layer. The tensile stress layer and the diffusion barrier layer can be removed.

    摘要翻译： 可以通过在衬底上形成栅极结构并在栅极结构和衬底上形成扩散阻挡层来提供制造半导体器件的方法.A应力层可以形成在包含金属氮化物或金属的扩散阻挡层上 具有与其相关联的氮或氧浓度的氧化物。 应力层可以被加热以将应力层转变成拉伸应力层，以减小应力层中的氮或氧的浓度。 可以去除拉伸应力层和扩散阻挡层。