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公开(公告)号:US20240206061A1
公开(公告)日:2024-06-20
申请号:US18537877
申请日:2023-12-13
Applicant: IBIDEN CO., LTD.
Inventor: Ryo ANDO , Nobuhisa KURODA , Shogo FUKUI , Kosei ICHIKAWA , Makoto KATO
CPC classification number: H05K1/0373 , H05K1/0298 , H05K2201/0209 , H05K2201/0254 , H05K2201/0269
Abstract: A wiring substrate includes an insulating layer including a first layer and a second layer, and a conductor layer including a metal film formed on a surface of the second layer of the insulating layer such that the conductor layer includes a conductor pattern. The first layer includes resin and first inorganic particles, the second layer includes resin and second inorganic particles at the content rate that is lower than the content rate of the first inorganic particles in the first layer, and the thickness of the first layer is 90% or more of the thickness of the insulating layer. The second layer of the insulating layer includes a composite layer having the thickness in the range of 0.1 to 0.3 μm, and the composite layer includes part of the metal film in the conductor layer formed in gaps between the second inorganic particles and resin in the second layer.
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公开(公告)号:US20230180385A1
公开(公告)日:2023-06-08
申请号:US18062049
申请日:2022-12-06
Applicant: IBIDEN CO., LTD.
Inventor: Shogo FUKUI , Kosuke IKEDA , Kosei ICHIKAWA , Ryo ANDO
CPC classification number: H05K1/0373 , H05K3/4661 , H05K1/112 , H05K2201/0209 , H05K2201/0263
Abstract: A wiring substrate includes an insulating layer including inorganic filler particles and resin, and a conductor layer including a metal film formed on a surface of the insulating layer and having a conductor pattern. The inorganic filler particles include first inorganic filler particles such that each of the first inorganic filler particles has a portion exposed on the surface of the insulating layer and is at least partially separated from the resin, the conductor layer is formed such that a part of the metal film is between the first inorganic filler particles and the resin from the surface of the insulating layer and that a distance between the surface of the insulating layer and the surface of the insulating layer at a deepest part of the part of the metal film is in the range of 0.1 μm to 0.5 μm.
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