公开(公告)号：US3886569A

公开(公告)日：1975-05-27

申请号：US34623773

申请日：1973-03-29

Applicant: IBM

Inventor： BASI JAGTAR S ,  SANDHU JAGTAR S

IPC: H01L21/00 ,  H01L21/225 ,  H01L21/316 ,  H01L7/00

CPC classification number: H01L21/31625 ,  H01L21/00 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/2255 ,  Y10S148/015 ,  Y10S148/043 ,  Y10S148/085 ,  Y10S148/145 ,  Y10S148/151

Abstract: A simultaneous double diffusion method wherein a coating containing a silicon oxide and the oxides of a plurality of conductivity-determining impurities having different diffusivity rates is formed on the surface of a semiconductor substrate using a temperature at which substantially no diffusion of the impurities into the substrate will take place. Then, the substrate is heated to simultaneously diffuse the impurities into the substrate to form a plurality of abutting regions in the substrate separated by junctions. The sequence of regions in distance, with respect to the substrate surface, is controlled by the diffusivity rates of the selected conductivity-determining impurities. The coating may be a single layer or a plurality of layers, at least two of which contain different conductivitydetermining impurities.