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    Laser device having enclosed laser cavity
    3.
    发明授权
    Laser device having enclosed laser cavity 失效
    具有封闭激光腔的激光装置

    公开(公告)号：US3893044A

    公开(公告)日：1975-07-01

    申请号：US35057573

    申请日：1973-04-12

    Applicant: IBM

    Inventor： DUMKE WILLIAM P ,  WOODALL JERRY M

    IPC: H01L21/208 ,  H01L33/00 ,  H01S5/00 ,  H01S5/227 ,  H01S3/00

    CPC classification number: H01S5/227 ,  H01L33/00 ,  H01S5/2275 ,  Y10S148/049 ,  Y10S148/051 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/145 ,  Y10S148/169

    Abstract: A semiconductor laser device having an enclosed laser cavity is disclosed. The semiconductor laser is of the heterostructure type and embodiments of single and double heterostructures are disclosed. In both of the heterostructure devices disclosed, the side surfaces of the active region are well defined. This is accomplished, in one instance, by surrounding the laser active region on all side surfaces with a higher band gap material which also has a lower index of refraction. Thus, the laser cavity is partially enclosed by a semiconductor material on one conductivity type of a band gap higher than the band gap of the material of the laser cavity. The remaining portion is enclosed by a band gap material higher than the material of the laser cavity but is of opposite conductivity type to the first mentioned higher band gap material. In another instance the side surfaces of the laser active region are partially surrounded by a high band gap material and partially by a region of opposite conductivity type to the active region; both of which regions contribute carriers to the active region. The laser devices disclosed are made, for example, from layers of appropriately doped P and N type gallium arsenide and from layers of P and N type gallium aluminum arsenide. The resulting devices can have very small cavity cross sections, optical and electrical confinement of the excitation at all the side surfaces, low electrical series resistance and a low thermal resistance due to geometrical factors. The laser devices disclosed may be fabricated using well known fabrication techniques which include deposition of the layers of the laser by liquid phase epitaxy (LPE), molecular beam epitaxy (MBE) and melt-back or etching techniques. The latter techniques define the laser cavity.

    Abstract translation: 公开了一种具有封闭激光腔的半导体激光器件。 半导体激光器是异质结构类型，并且公开了单异质结和双异质结构的实施方案。 在所公开的两种异质结构器件中，有源区的侧表面是明确的。 这在一个实例中是通过用具有较低折射率的更高带隙材料围绕所有侧表面上的激光有源区来实现的。 因此，激光腔部分地被半导体材料包围在比激光腔的材料的带隙高的一个导电类型的带隙上。 剩余部分由比激光腔材料高的带隙材料包围，但与第一种较高带隙材料具有相反的导电类型。 在另一个实例中，激光有源区的侧表面被高带隙材料部分地包围，部分地被与有源区相反的导电类型的区域包围; 这两个区域都为活跃地区提供载体。 所公开的激光器件例如由适当掺杂的P型和N型砷化镓层以及由P型和N型砷化镓铝层形成。 所得到的器件可以具有非常小的空腔横截面，在所有侧表面处的激发的光学和电气限制，由于几何因素导致的低电串联电阻和低热阻。

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