Abstract:
Carrier concentration of a semiconductive material is measured by directing monochromatic light at the material. The light is polarized with its electric vector in the plane of incidence. The angle of incidence is varied until a minimum in reflectivity occurs. The angle at which the minimum occurs, referred to as the pseudo-Brewster angle theta B, is related to the carrier concentration, whence the carrier concentration may be determined by comparison with a series of standards or by calculation.