公开(公告)号：US3655457A

公开(公告)日：1972-04-11

申请号：US3655457D

申请日：1968-08-06

Applicant: IBM

Inventor： DUFFY MICHAEL C ,  SCHUMANN PAUL A JR ,  YEH TSU-HSING

IPC: H01L21/76 ,  H01L21/00 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/337 ,  H01L21/74 ,  H01L21/761 ,  H01L21/82 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/00 ,  H01L27/04 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/808 ,  H01L7/00

CPC classification number: H01L29/167 ,  H01L21/00 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/3221 ,  H01L21/74 ,  H01L21/761 ,  H01L21/82 ,  H01L21/8222 ,  H01L27/00 ,  H01L29/0821 ,  Y10S148/062 ,  Y10S148/085 ,  Y10S148/151 ,  Y10S438/904

Abstract: Monolithic integrated circuits are made utilizing various ion implantation techniques for making diodes, transistors, resistors, capacitors, underpass connections, sub-collector junctions, etc., and for altering impurity profiles, gold doping, trimming resistance values, altering junctions depth, and isolating regions.

Abstract translation: 使用各种离子注入技术制造单片集成电路，用于制造二极管，晶体管，电阻器，电容器，地下通道连接，子集电极结等，并且用于改变杂质分布，金掺杂，修整电阻值，改变接合深度和隔离 地区。

公开(公告)号：US3623818A

公开(公告)日：1971-11-30

申请号：US3623818D

申请日：1969-12-15

Applicant: IBM

Inventor： GARDNER EDWARD E ,  KEENAN WILLIAM A ,  SCHUMANN PAUL A JR

IPC: H01L21/66 ,  G01N21/21 ,  G01N21/55 ,  G01N21/84 ,  G01R31/26 ,  G01N21/48 ,  G01T1/16

CPC classification number: G01R31/2637 ,  G01N21/21 ,  G01N21/55 ,  G01N2021/8461

Abstract: Carrier concentration of a semiconductive material is measured by directing monochromatic light at the material. The light is polarized with its electric vector in the plane of incidence. The angle of incidence is varied until a minimum in reflectivity occurs. The angle at which the minimum occurs, referred to as the pseudo-Brewster angle theta B, is related to the carrier concentration, whence the carrier concentration may be determined by comparison with a series of standards or by calculation.

公开(公告)号：US3590372A

公开(公告)日：1971-06-29

申请号：US3590372D

申请日：1968-12-26

Applicant: IBM

Inventor： DESANTIS DOMINIC P ,  DESSAUER RALPH G ,  GOREY EDWARD F ,  POPONIAK MICHAEL R ,  SCHNEIDER CHRISTIAN P ,  SCHUMANN PAUL A JR

IPC: G01R27/00 ,  G01N27/04 ,  G01R1/067 ,  G01R31/28 ,  H01L21/66 ,  G01R27/14

CPC classification number: G01R31/2831 ,  G01N27/041 ,  G01R1/06705

Abstract: A three-point probe is employed to determine the spreading resistance of a material with the spreading resistance probe, which is common to both the current source and a voltage measuring means, being moved into engagement with the material after the other two probes are in engagement with the material. The velocity with which each of the probes engages the material is controlled and is variable. To ascertain that a good contact has been made by the spreading resistance probe and the magnitude of the current flowing through the material from the current source, the voltage measuring means is connected across resistance means in the wire from the current source to the spreading resistance probe and current is directed through the resistance means in opposite directions by flowing through the material between the spreading resistance probe and one of the other two probes. After the magnitude of the current has been determined, the voltage measuring means is connected to the spreading resistance probe adjacent its contact to the material and to the other of the two probes, which is not connected to the current source, to determine the voltage drop through the material due to current from the current source flowing in opposite directions through the material. The amount of difference between the two voltage readings on the specimen indicates if good contact is achieved.

公开(公告)号：US3487301A

公开(公告)日：1969-12-30

申请号：US3487301D

申请日：1968-03-04

Applicant: IBM

Inventor： GARDNER EDWARD E ,  GOREY EDWARD F ,  SCHUMANN PAUL A JR ,  YEH TSU-HSING

IPC: G01N27/04 ,  G01R31/26 ,  G01R27/14

CPC classification number: G01N27/041 ,  G01R31/2644