公开(公告)号：US3903324A

公开(公告)日：1975-09-02

申请号：US26413072

申请日：1972-06-19

Applicant: IBM

Inventor： GUKELBERGER JR THOMAS F ,  KLEINFELDER WALTER J

IPC: H01J37/317 ,  H01L21/00 ,  H01L21/26 ,  H01L21/265 ,  H01L21/28 ,  H01L21/60 ,  B44D1/14 ,  B44D1/02

CPC classification number: H01L21/265 ,  H01J37/317 ,  H01L21/00 ,  H01L21/26 ,  H01L21/28 ,  Y10S438/933

Abstract: A deposited metallic film on a substrate is bombarded with high energy ions having an energy of at least 10 Kev with the ions being selected from the group of ions ranging between helium and argon. The selected ions depend upon the metal forming the film and the thickness of the film. This bombardment reduces the yield stress of the film in any area in which the ions strike and is particularly useful to form metallic lands on a semiconductor substrate.

Abstract translation: 使用离子选自氦和氩之间的离子组，在具有至少10Kev的能量的高能离子的基础上沉积金属膜。 选择的离子取决于形成膜的金属和膜的厚度。 这种轰击降低了膜在其中离子发射的任何区域中的屈服应力，并且特别适用于在半导体衬底上形成金属焊盘。