公开(公告)号：US3681623A

公开(公告)日：1972-08-01

申请号：US3681623D

申请日：1970-12-31

Applicant: IBM

Inventor： HOFFMAN HARRY S JR ,  SAIA JERRY

IPC: G05F3/22 ,  H03F1/30 ,  H03F1/32 ,  H03F3/18 ,  H03F3/195 ,  H03F3/343 ,  H03F3/347 ,  H03H11/40 ,  H03K1/12

CPC classification number: G05F3/225 ,  H03F1/302 ,  H03F1/32 ,  H03F3/195 ,  H03F3/343 ,  H03F3/347 ,  H03H11/40

Abstract: A three terminal circuit comprised of two semiconductor transistors of opposite polarity types and two semiconductor diodes. These semiconductors are interconnected so as to provide positive regenerative feedback in a manner which permits achieving highly stable, temperature insensitive circuit characteristics which can be made independent of circuit parameters. The circuit requires no resistors, capacitors or inductors and may be used with particular advantage in integrated circuit form. Use of the circuit as an impedance converter, current generator, voltage regulator and differential amplifier are illustrated.

公开(公告)号：US3696285A

公开(公告)日：1972-10-03

申请号：US3696285D

申请日：1970-04-14

Applicant: IBM

Inventor： SAIA JERRY

IPC: H02M1/00 ,  H02M1/32 ,  H02M3/338 ,  H03K3/33 ,  H02M7/48

CPC classification number: H02M1/32 ,  H02M3/338 ,  H03K3/33

Abstract: A family of circuits characterized by storage mode operation in a switching circuit employs minority carrier injection from the base into the collector region of a semi-conductor device. The minority carrier charge stored in the collector thereafter causes amplified forward collector emitter current when forward collector potential is applied. Particular examples of the circuit family include inverters, single shot circuits, transistor oscillators and electronic switching in general.

Abstract translation: 在开关电路中以存储模式操作为特征的电路系列使用从基极到半导体器件的集电极区域的少数载流子注入。 此后收集的少数载流子电荷在施加正向集电极电位时会产生放大的正向集电极发射极电流。 电路系列的具体实例包括逆变器，单电路电路，晶体管振荡器和电子开关。

公开(公告)号：US3471651A

公开(公告)日：1969-10-07

申请号：US3471651D

申请日：1967-01-13

Applicant: IBM

Inventor： SAIA JERRY ,  SPENCER DARYL L

IPC: H04M3/02 ,  H04M19/02 ,  H04B5/00

CPC classification number: H04M19/026

公开(公告)号：US3875432A

公开(公告)日：1975-04-01

申请号：US18843071

申请日：1971-10-21

Applicant: IBM

Inventor： SAIA JERRY

IPC: H02M1/00 ,  H02M1/32 ,  H02M3/338 ,  H03K3/33 ,  H03K3/26 ,  H03K19/08

CPC classification number: H02M1/32 ,  H02M3/338 ,  H03K3/33

Abstract: A family of circuits characterized by storage mode operation in a switching circuit employs minority carrier injection from the base into the collector region of a semi-conductor device. The minority carrier charge stored in the collector thereafter causes amplified forward collector emitter current when forward collector potential is applied. Particular examples of the circuit family includes inverters, single shot circuits transistor oscillators and electronic switching in general.

Abstract translation: 在开关电路中以存储模式操作为特征的电路系列使用从基极到半导体器件的集电极区域的少数载流子注入。 此后收集的少数载流子电荷在施加正向集电极电位时会产生放大的正向集电极发射极电流。 电路系列的具体实例包括逆变器，单次电路晶体管振荡器和电子开关。

公开(公告)号：US3609410A

公开(公告)日：1971-09-28

申请号：US58677566

申请日：1966-10-14

Applicant: IBM

Inventor： SAIA JERRY

IPC: H02M3/338 ,  H03K3/284 ,  H03K3/33 ,  H03K17/041 ,  H03K19/082 ,  H03K3/26

CPC classification number: H02M3/338 ,  H03K3/284 ,  H03K3/33 ,  H03K17/04113 ,  H03K19/082

Abstract: A family of circuits characterized by storage mode operation in a switching circuit employs minority carrier injection from the base into the collector region of a semiconductor device. The minority carrier charge stored in the collector thereafter causes amplified forward collector-emitter current when forward collector potential is applied. Particular examples of the circuit family include inverters, single-shot circuits, transistor oscillators and electronic switching in general.